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1. 发明申请

US20050084208A1 Modulation frequency tunable optical oscillator 有权
公开(公告)号：US20050084208A1
公开(公告)日：2005-04-21
申请号：US10749145
申请日：2003-12-31
申请人： Ho Kim , Eun Nam , Kyoung Cho
发明人： Ho Kim , Eun Nam , Kyoung Cho
IPC分类号： G02B26/00 , G02B6/34 , H01S3/067 , H01S3/0941 , H01S3/106 , H01S3/16 , G02B6/26
CPC分类号： G02B6/29319 , G02B6/02076 , G02B6/278 , G02B6/29322 , H01S3/0675 , H01S3/0941 , H01S3/106 , H01S3/1608
摘要： The present invention relates to a millimeter wave frequency band optical oscillator used for an oscillating frequency signal source of millimeter waves transmitted from a repeater to a wireless subscriber in a millimeter wave wireless subscriber communication system for a next-generation (i.e., 5th generation or less) very high speed wireless internet service, wherein a loop mirror and a pair of optical fiber grating mirrors are used. A wavelength fixed type and a wavelength tunable type optical fiber grating mirrors are connected in a serial manner to constitute a dual laser mode resonator capable of simultaneously oscillating two laser modes, which are appropriate to each wavelength. Therefore, it is possible to obtain a laser light source capable of an extremely high frequency (60 GHz or more) modulation by using beat phenomena between two laser modes.

2. 发明申请

US20060078010A1 Modulation frequency tunable optical oscillator 失效
标题翻译：调制频率可调光学振荡器
公开(公告)号：US20060078010A1
公开(公告)日：2006-04-13
申请号：US11017654
申请日：2004-12-22
申请人： Young Kim , Eun Nam , Kyoung Cho , Bo Kim , Myung Oh
发明人： Young Kim , Eun Nam , Kyoung Cho , Bo Kim , Myung Oh
IPC分类号： H01S3/098
CPC分类号： H01S3/067 , H01S3/0675 , H01S3/07 , H01S3/0809 , H01S3/082 , H01S3/1055
摘要： Provided is a millimeter-wave band frequency optical oscillator that can be used as an oscillation frequency signal source for a millimeter-wave forwarded to wireless subscribers from a base station of a millimeter-wave wireless subscriber communication system for a next generation (e.g., fifth generation) ultra-high speed wireless internet service. A pair of an optical fiber amplifier and an optical fiber grating mirror is connected to each of input/output ports of a loop mirror in parallel, so that a dual mode laser resonator is formed which can make simultaneous oscillation in two laser modes suitable for each wavelength. Accordingly, it is possible to obtain a light source that is modulated to a ultra-high frequency (over 60 GHz) by a beat phenomenon between the two laser modes.
摘要翻译：提供了一种毫米波段频率光学振荡器，其可以用作从用于下一代的毫米波无线用户通信系统的基站转发到无线用户的毫米波的振荡频率信号源（例如，第五一代）超高速无线互联网服务。一对光纤放大器和光纤光栅反射镜并联连接到环形反射镜的每个输入/输出端口，从而形成双模式激光谐振器，其可以在适合于每个激光模式的两种激光模式中同时振荡波长。因此，可以通过两种激光模式之间的拍子现象来获得被调制到超高频（超过60GHz）的光源。

3. 发明申请

US20060028279A1 Automatic gain control feedback amplifier 有权
标题翻译：自动增益控制反馈放大器
公开(公告)号：US20060028279A1
公开(公告)日：2006-02-09
申请号：US10995033
申请日：2004-11-23
申请人： Sang Lee , Hyeon Ki , Jin Kang , Kyu Shim , Kyoung Cho
发明人： Sang Lee , Hyeon Ki , Jin Kang , Kyu Shim , Kyoung Cho
IPC分类号： H03F3/08
CPC分类号： H03F3/08 , H03F1/34 , H03F3/3432 , H03F3/50 , H03G3/3084
摘要： There is provided a feedback amplifier capable of easily controlling its dynamic range without a separate gain control signal generation circuit. The feedback amplifier includes an input terminal detecting an input voltage from input current, a feedback amplification unit amplifying the input voltage to generate an output signal, and an output terminal outputting a signal amplified by the feedback amplification unit. The feedback amplification unit includes a feedback circuit unit including a feedback resistor located between the input terminal and the output terminal, and a feedback transistor connected in parallel to the feedback resistor; and a bias circuit unit supplying a predetermined bias voltage to the feedback transistor of the feedback circuit unit and merged in the feedback amplification unit.
摘要翻译：提供了一种反馈放大器，其能够在没有单独的增益控制信号产生电路的情况下容易地控制其动态范围。反馈放大器包括检测来自输入电流的输入电压的输入端子，放大输入电压以产生输出信号的反馈放大单元以及输出由反馈放大单元放大的信号的输出端子。反馈放大单元包括反馈电路单元，该反馈电路单元包括位于输入端子和输出端子之间的反馈电阻器和与反馈电阻器并联连接的反馈晶体管; 以及偏置电路单元，向反馈电路单元的反馈晶体管提供预定的偏置电压并且合并在反馈放大单元中。

4. 发明申请

US20050104127A1 Bipolar transistor, BiCMOS device, and method for fabricating thereof 审中-公开
标题翻译：双极晶体管，BiCMOS器件及其制造方法
公开(公告)号：US20050104127A1
公开(公告)日：2005-05-19
申请号：US10872593
申请日：2004-06-22
申请人： Jin Kang , Seung Lee , Kyoung Cho
发明人： Jin Kang , Seung Lee , Kyoung Cho
IPC分类号： H01L27/12 , H01L21/84 , H01L29/737 , H01L29/76
CPC分类号： H01L29/7378 , H01L21/84
摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.
摘要翻译：提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件，低功耗，宽带性能。

5. 发明申请

US20070287234A1 Bipolar transistor, BiCMOS device, and method for fabricating thereof 有权
标题翻译：双极晶体管，BiCMOS器件及其制造方法
公开(公告)号：US20070287234A1
公开(公告)日：2007-12-13
申请号：US11797071
申请日：2007-04-30
申请人： Jin Kang , Seung Lee , Kyoung Cho
发明人： Jin Kang , Seung Lee , Kyoung Cho
IPC分类号： H01L21/8249
CPC分类号： H01L21/84 , H01L21/8249 , H01L27/0623 , H01L27/1203 , H01L29/7371 , H01L29/78
摘要： Provided are bipolar transistor, BiCMOS device and method of fabricating thereof, in which an existing sub-collector disposed beneath a collector of a SiGe HBT is removed and a collector plug disposed at a lateral side of the collector is approached to a base when fabricating a Si-based very high-speed device, whereby it is possible to fabricate the SiGe HBT and an SOI CMOS on a single substrate, reduce the size of the device and the number of masks to be used, and implement the device of high density, low power consumption, and wideband performance.
摘要翻译：提供了双极晶体管，BiCMOS器件及其制造方法，其中去除了设置在SiGe HBT的集电极下方的现有子集电极，并且设置在集电极的横向侧的集电极端子在制造时基于Si的非常高速的器件，由此可以在单个衬底上制造SiGe HBT和SOI CMOS，减少器件的尺寸和使用的掩模的数量，并实现高密度的器件，低功耗，宽带性能。

6. 发明申请

US20070132522A1 Multi-band LC resonance voltage-controlled oscillator with adjustable negative resistance cell 有权
标题翻译：具有可调负电阻单元的多频带LC谐振压控振荡器
公开(公告)号：US20070132522A1
公开(公告)日：2007-06-14
申请号：US11542288
申请日：2006-10-02
申请人： Ja Lee , Kwi Kim , Chong Kwon , Jong Kim , Sang Lee , Kyoung Cho
发明人： Ja Lee , Kwi Kim , Chong Kwon , Jong Kim , Sang Lee , Kyoung Cho
IPC分类号： H03B5/08
CPC分类号： H03B5/1228 , H03B5/1215 , H03B5/1243 , H03B5/1265 , H03B5/1271 , H03B2201/0208 , H03B2201/0266 , H03J2200/10
摘要： Provided is an LC resonance voltage-controlled oscillator (VCO) used for a multi-band multi-mode wireless transceiver. In order to generate a multi-band frequency, a capacitor bank and a switchable inductor are included in the LC resonance voltage-controlled oscillator. The LC resonance voltage-controlled oscillator employs an adjustable emitter-degeneration negative resistance cell in place of tail current sources in order to compensate for non-uniform oscillation amplitude caused by the capacitor bank and prevent the degradation of a phase noise due to the tail current sources. The LC resonance voltage-controlled oscillator includes an inductor providing an inductance element partially determining the frequency of an oscillation wave; a discrete capacitor bank providing a capacitance element partially determining the frequency of the oscillation wave and being discretely determined by a control bit signal; and a discrete negative resistance cell providing a negative resistance element that is discretely determined by the control bit signal, to keep the amplitude of the oscillation wave constant.
摘要翻译：提供了一种用于多频带多模无线收发器的LC谐振压控振荡器（VCO）。为了产生多频带频率，LC谐振压控振荡器中包括电容器组和可切换电感器。 LC谐振压控振荡器代替尾电流源采用可调发射极 - 退化负电阻电池，以补偿由电容器组引起的不均匀振荡幅度，并防止由于尾电流导致的相位噪声的降低来源。 LC谐振电压控制振荡器包括：电感器，其提供部分地确定振荡波频率的电感元件; 分立电容器组，提供部分地确定振荡波的频率并由控制位信号离散地确定的电容元件; 以及提供由控制位信号离散地确定的负电阻元件的离散负电阻单元，以保持振荡波的幅度恒定。

7. 发明申请

US20070120628A1 Dielectric waveguide filter with cross-coupling 失效
标题翻译：具有交叉耦合的介质波导滤波器
公开(公告)号：US20070120628A1
公开(公告)日：2007-05-31
申请号：US11588176
申请日：2006-10-25
申请人： Dong Jun , Kyoung Cho , Hong Lee , Dong Kim , Sang Lee
发明人： Dong Jun , Kyoung Cho , Hong Lee , Dong Kim , Sang Lee
IPC分类号： H01P1/207
CPC分类号： H01P1/2088
摘要： Provided is a dielectric waveguide filter. The filter includes: a multi-layered structure of dielectric substrates having first and second ground planes at its top and bottom; first, second, and third waveguide resonators disposed at multiple layers within the multi-layered structure; converters for signal transition between input/output ports and the first and third waveguide resonators; first vias for forming the first, second, and third waveguide resonators; and second vias disposed at a boundary surface of the first waveguide resonator and the third waveguide resonator.
摘要翻译：提供了一种电介质波导滤波器。该滤波器包括：绝缘基片的多层结构，其顶部和底部具有第一和第二接地平面; 设置在多层结构内的多层的第一，第二和第三波导谐振器; 转换器，用于输入/输出端口与第一和第三波导谐振器之间的信号转换; 用于形成第一，第二和第三波导谐振器的第一通孔; 以及设置在第一波导谐振器和第三波导谐振器的边界面处的第二通孔。

8. 发明申请

US20060082425A1 Microstrip type bandpass filter 失效
标题翻译：微带型带通滤波器
公开(公告)号：US20060082425A1
公开(公告)日：2006-04-20
申请号：US11136471
申请日：2005-05-25
申请人： Dong Jun , Hong Lee , Dong Kim , Kyoung Cho , Sang Lee
发明人： Dong Jun , Hong Lee , Dong Kim , Kyoung Cho , Sang Lee
IPC分类号： H01P1/203
CPC分类号： H01P1/203
摘要： Provided is a narrowband microstrip type bandpass filter adapted- to a home network, telematics, an intelligent traffic system, and a satellite Internet, the microstrip type bandpass filter comprising: an input terminal for receiving a predetermined signal; an output terminal for outputting a selection signal in a characteristic band; a first resonator electrically coupled with at least a portion of the input terminal; a second resonator electrically coupled with at least a portion of the first resonator; and a third resonator electrically coupled with at least a portion of the output terminal and the second resonator, and a magnetic coupling is provided using a cross coupling gap or a cross coupling line between non-adjacent resonators, so that a pattern can be simplified by optimizing the design and the manufacturing process to provide low-cost millimeter-wave parts, the manufacturing cost can be reduced by miniaturizing the parts, and the mass production can be readily realized.
摘要翻译：提供了适用于家庭网络，远程信息处理，智能交通系统和卫星互联网的窄带微带型带通滤波器，微带型带通滤波器包括：用于接收预定信号的输入端; 输出端子，用于输出特征频带中的选择信号; 与所述输入端子的至少一部分电耦合的第一谐振器; 与所述第一谐振器的至少一部分电耦合的第二谐振器; 以及与输出端子和第二谐振器的至少一部分电耦合的第三谐振器，并且使用非相邻谐振器之间的交叉耦合间隙或交叉耦合线提供磁耦合，使得可以通过优化设计和制造工艺以提供低成本的毫米波部件，可以通过使部件小型化来降低制造成本，并且可以容易地实现批量生产。

9. 发明申请

US20070126518A1 Oscillator using TFMS line 审中-公开
标题翻译：振荡器采用TFMS线
公开(公告)号：US20070126518A1
公开(公告)日：2007-06-07
申请号：US11544629
申请日：2006-10-10
申请人： Hong Ji , Hea Kim , Kyoung Cho
发明人： Hong Ji , Hea Kim , Kyoung Cho
IPC分类号： H03B5/18
CPC分类号： H03B5/1847
摘要： Provided is an oscillator in which a resonator unit and an oscillator unit are coupled with each other using a thin film microstrip (TFMS) line to increase a line impedance and thus improve a phase noise characteristic. The oscillator includes a resonator unit resonating in a specific frequency band among variable frequencies, an oscillator unit generating an oscillation frequency using the resonance frequency, and a coupling unit coupling the resonator unit with the oscillator unit using a TFMS line.
摘要翻译：提供了一种振荡器，其中谐振器单元和振荡器单元使用薄膜微带线（TFMS）线彼此耦合以增加线路阻抗，从而提高相位噪声特性。振荡器包括在可变频率之中的特定频带中谐振的谐振器单元，使用谐振频率产生振荡频率的振荡器单元，以及使用TFMS线将振荡器单元与振荡器单元耦合的耦合单元。

10. 发明申请

US20050139921A1 NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same 有权
标题翻译： NMOS器件，PMOS器件和SOI衬底上形成的SiGe HBT器件及其制造方法
公开(公告)号：US20050139921A1
公开(公告)日：2005-06-30
申请号：US11019179
申请日：2004-12-23
申请人： Jin Kang , Seung Lee , Kyoung Cho
发明人： Jin Kang , Seung Lee , Kyoung Cho
IPC分类号： H01L27/092 , H01L21/331 , H01L21/8228 , H01L21/84 , H01L27/12 , H01L27/01
CPC分类号： H01L29/66242 , H01L21/84 , H01L27/1203
摘要： Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.
摘要翻译：提供了在SOI衬底上实现的NMOS器件，PMOS器件和SiGe HBT器件及其制造方法。在制造Si基高速器件时，SiGe HBT和CMOS安装在单个SOI衬底上。特别地，CMOS的源极和漏极由SiGe和金属形成，因此防止漏电流并实现低功耗。此外，芯片中的发热被抑制，即使在低电压下也可以获得宽的工作范围。

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