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1. 发明申请

US20050084208A1 Modulation frequency tunable optical oscillator 有权
公开(公告)号：US20050084208A1
公开(公告)日：2005-04-21
申请号：US10749145
申请日：2003-12-31
申请人： Ho Kim , Eun Nam , Kyoung Cho
发明人： Ho Kim , Eun Nam , Kyoung Cho
IPC分类号： G02B26/00 , G02B6/34 , H01S3/067 , H01S3/0941 , H01S3/106 , H01S3/16 , G02B6/26
CPC分类号： G02B6/29319 , G02B6/02076 , G02B6/278 , G02B6/29322 , H01S3/0675 , H01S3/0941 , H01S3/106 , H01S3/1608
摘要： The present invention relates to a millimeter wave frequency band optical oscillator used for an oscillating frequency signal source of millimeter waves transmitted from a repeater to a wireless subscriber in a millimeter wave wireless subscriber communication system for a next-generation (i.e., 5th generation or less) very high speed wireless internet service, wherein a loop mirror and a pair of optical fiber grating mirrors are used. A wavelength fixed type and a wavelength tunable type optical fiber grating mirrors are connected in a serial manner to constitute a dual laser mode resonator capable of simultaneously oscillating two laser modes, which are appropriate to each wavelength. Therefore, it is possible to obtain a laser light source capable of an extremely high frequency (60 GHz or more) modulation by using beat phenomena between two laser modes.

2. 发明申请

US20060078010A1 Modulation frequency tunable optical oscillator 失效
标题翻译：调制频率可调光学振荡器
公开(公告)号：US20060078010A1
公开(公告)日：2006-04-13
申请号：US11017654
申请日：2004-12-22
申请人： Young Kim , Eun Nam , Kyoung Cho , Bo Kim , Myung Oh
发明人： Young Kim , Eun Nam , Kyoung Cho , Bo Kim , Myung Oh
IPC分类号： H01S3/098
CPC分类号： H01S3/067 , H01S3/0675 , H01S3/07 , H01S3/0809 , H01S3/082 , H01S3/1055
摘要： Provided is a millimeter-wave band frequency optical oscillator that can be used as an oscillation frequency signal source for a millimeter-wave forwarded to wireless subscribers from a base station of a millimeter-wave wireless subscriber communication system for a next generation (e.g., fifth generation) ultra-high speed wireless internet service. A pair of an optical fiber amplifier and an optical fiber grating mirror is connected to each of input/output ports of a loop mirror in parallel, so that a dual mode laser resonator is formed which can make simultaneous oscillation in two laser modes suitable for each wavelength. Accordingly, it is possible to obtain a light source that is modulated to a ultra-high frequency (over 60 GHz) by a beat phenomenon between the two laser modes.
摘要翻译：提供了一种毫米波段频率光学振荡器，其可以用作从用于下一代的毫米波无线用户通信系统的基站转发到无线用户的毫米波的振荡频率信号源（例如，第五一代）超高速无线互联网服务。一对光纤放大器和光纤光栅反射镜并联连接到环形反射镜的每个输入/输出端口，从而形成双模式激光谐振器，其可以在适合于每个激光模式的两种激光模式中同时振荡波长。因此，可以通过两种激光模式之间的拍子现象来获得被调制到超高频（超过60GHz）的光源。

3. 发明申请

US20070131971A1 Hetero junction bipolar transistor and method of manufacturing the same 失效
标题翻译：异质结双极晶体管及其制造方法
公开(公告)号：US20070131971A1
公开(公告)日：2007-06-14
申请号：US11634614
申请日：2006-12-06
申请人： Yong Kim , Eun Nam , Ho Kim , Sang Lee , Dong Jun , Hong Lee , Seon Hong , Dong Kim , Jong Lim , Myoung Oh
发明人： Yong Kim , Eun Nam , Ho Kim , Sang Lee , Dong Jun , Hong Lee , Seon Hong , Dong Kim , Jong Lim , Myoung Oh
IPC分类号： H01L31/00
CPC分类号： H01L29/7371 , H01L29/0817 , H01L29/41708 , H01L29/66318
摘要： Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor. The HBT includes a semi-insulating compound substrate, a sub-collector layer formed on the semi-insulating compound substrate, a pair of collector electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the sub-collector layer, a collector layer and a base layer disposed between the collector electrodes, a pair of base electrodes disposed at a predetermined distance apart from each other on a predetermined portion of the base layer, an emitter layer stack disposed between the base electrodes, and an emitter electrode that is formed on the emitter layer stack, and includes a portion having a line width wider than the line width of the emitter layer stack, wherein both sidewalls of the emitter electrode are respectively aligned with inner walls of the pair of base electrodes, and sidewalls of the collector layer and the base layer are located between outer sidewalls of the pair of base electrodes of the pair of base electrodes.
摘要翻译：提供了可以提高数据处理速度的异质结双极晶体管（HBT）和制造异质结双极晶体管的方法。 HBT包括半绝缘复合基板，形成在半绝缘复合基板上的副集电极层，在副集电极层的预定部分上彼此隔开预定距离设置的一对集电极，集电极层和设置在集电极之间的基极层，在基极层的预定部分上彼此隔开预定距离设置的一对基底电极，设置在基极之间的发射极层叠层和发射极电极，形成在发射极层堆叠上，并且包括具有比发射极层堆叠的线宽宽的线宽的部分，其中发射极电极的两个侧壁分别与一对基底电极的内壁对齐，并且侧壁集电极层和基极层位于该对基极的一对基极的外侧壁之间。

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