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    • 4. 发明授权
      US5801085A Method for the prevention of misfit dislocation in silicon wafer and silicon structure manufactured thereby 失效
    • Method for the prevention of misfit dislocation in silicon wafer and silicon structure manufactured thereby
    • 防止硅晶片失配错位的方法和由此制造的硅结构
    • US5801085A
    • 1998-09-01
    • US535454
    • 1995-09-28
    • Choong Ki Kim , Chul Hi Han , Ho Jun Lee
    • Choong Ki Kim , Chul Hi Han , Ho Jun Lee
    • H01L21/22 , B81B1/00 , B81C99/00 , H01L21/02 , H01L21/265 , H01L21/266 , H01L21/322 , H01L21/425
    • H01L21/26513 , H01L21/266 , Y10S438/938
    • There are disclosed methods for the prevention of misfit dislocation in a silicon wafer and the silicon wafer structure manufactured thereby. A method according to an embodiment comprises the steps of: depositing a blanket silicon oxide or silicon nitride on silicon wafer in a chemical vapor deposition process; selectively etching the silicon oxide or silicon nitride, to form a silicon oxide or silicon nitride pattern which is of close shape; and injecting the silicon wafer with impurities at a high density with the CVD silicon oxide or silicon nitride pattern serving as a mask, so as to form an impurity-blocked region is formed under the CVD silicon oxide or silicon nitride through the action of the mask. The misfit dislocation is propagated mainly from the edge of wafer and an impurity-blocked region can prevent the propagation. The propagation energy is virtually based on the tensile stress attributable to the implantation of impurity. Formation of an impurity-blocked region in the wafer barricades the propagation of misfit dislocation because the propagation energy is not supplied in this region. Thus, the area of the silicon wafer enclosed by the impurity-blocked region has no misfit dislocation. By such conception, a silicon wafer free of misfit dislocation can be manufactured. Therefore, there are improved in electrical and mechanical properties in electrical devices, X-ray masks and micromachines as well as in surface roughness.
    • 公开了防止硅晶片中的错配位错的方法以及由此制造的硅晶片结构。 根据实施例的方法包括以下步骤：在化学气相沉积工艺中在硅晶片上沉积覆盖氧化硅或氮化硅; 选择性地蚀刻氧化硅或氮化硅，以形成接近形状的氧化硅或氮化硅图案; 并且以CVD硅氧化物或氮化硅图案为掩模以高密度注入硅晶片以形成杂质阻挡区域，通过掩模的作用形成在CVD二氧化硅或氮化硅的下面 。 错配位错主要从晶片的边缘传播，杂质阻挡区域可以防止传播。 传播能量实际上基于归因于杂质注入的拉伸应力。 由于在该区域不提供传播能量，所以晶片中杂质阻挡区域的形成阻碍了错配位错的传播。 因此，由杂质阻挡区域包围的硅晶片的面积没有失配位错。 通过这样的概念，可以制造没有失配位错的硅晶片。 因此，电气设备，X射线掩模和微机械以及表面粗糙度的电气和机械性能都有所提高。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 5. 发明授权
      US5828114A Method for the prevention of misfit dislocation in silicon wafer and silicon wafer structure manufactured thereby 失效
    • Method for the prevention of misfit dislocation in silicon wafer and silicon wafer structure manufactured thereby
    • 用于防止由此制造的硅晶片和硅晶片结构中的错配错位的方法
    • US5828114A
    • 1998-10-27
    • US807825
    • 1997-02-27
    • Choong Ki Kim , Chul Hi Han , Ho Jun Lee
    • Choong Ki Kim , Chul Hi Han , Ho Jun Lee
    • H01L21/22 , B81B1/00 , B81C99/00 , H01L21/02 , H01L21/265 , H01L21/266 , H01L21/322 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
    • H01L21/26513 , H01L21/266 , Y10S438/938
    • There are disclosed methods for the prevention of misfit dislocation in a silicon wafer and the silicon wafer structure manufactured thereby. A method according to an embodiment comprises the steps of: depositing a blanket silicon oxide or silicon nitride on silicon wafer in a chemical vapor deposition process; selectively etching the silicon oxide or silicon nitride, to form a silicon oxide or silicon nitride pattern which is of close shape; and injecting the silicon wafer with impurities at a high density with the CVD silicon oxide or silicon nitride pattern serving as a mask, so as to form an impurity-blocked region is formed under the CVD silicon oxide or silicon nitride through the action of the mask. The misfit dislocation is propagated mainly from the edge of wafer and an impurity-blocked region can prevent the propagation. The propagation energy is virtually based on the tensile stress attributable to the implantation of impurity. Formation of an impurity-blocked region in the wafer barricades the propagation of misfit dislocation because the propagation energy is not supplied in this region. Thus, the area of the silicon wafer enclosed by the impurity-blocked region has no misfit dislocation. By such conception, a silicon wafer free of misfit dislocation can be manufactured. Therefore, there are improved in electrical and mechanical properties in electrical devices, X-ray masks and micromachines as well as in surface roughness.
    • 公开了防止硅晶片中的错配位错的方法以及由此制造的硅晶片结构。 根据实施例的方法包括以下步骤：在化学气相沉积工艺中在硅晶片上沉积覆盖氧化硅或氮化硅; 选择性地蚀刻氧化硅或氮化硅，以形成接近形状的氧化硅或氮化硅图案; 并且以CVD硅氧化物或氮化硅图案为掩模以高密度注入硅晶片以形成杂质阻挡区域，通过掩模的作用形成在CVD二氧化硅或氮化硅的下面 。 错配位错主要从晶片的边缘传播，杂质阻挡区域可以防止传播。 传播能量实际上基于归因于杂质注入的拉伸应力。 由于在该区域不提供传播能量，所以晶片中杂质阻挡区域的形成阻碍了错配位错的传播。 因此，由杂质阻挡区域包围的硅晶片的面积没有失配位错。 通过这样的概念，可以制造没有失配位错的硅晶片。 因此，电气设备，X射线掩模和微机械以及表面粗糙度的电气和机械性能都有所提高。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 8. 发明授权
      US08903148B2 X-ray imaging apparatus and method of updating a pixel map 有权
    • X-ray imaging apparatus and method of updating a pixel map
    • X射线成像装置和更新像素图的方法
    • US08903148B2
    • 2014-12-02
    • US13541820
    • 2012-07-05
    • Ho Jun Lee , Jin Ki Kim
    • Ho Jun Lee , Jin Ki Kim
    • G06K9/00 , G06T5/00
    • G06T5/002 , G06T2207/10116 , G06T2207/30004 , Y10S128/922
    • An X-ray imaging apparatus and a method of updating a pixel map correct a bad pixel of an X-ray transmission image. An X-ray transmission image is generated by detecting an X-ray penetrating an object, and it is determined whether a difference between a value of each one of the pixels forming the X-ray transmission image and a value of a nearby pixel adjacent to the each one of the pixels is equal to or greater than a reference value. A pixel having a value representing a difference equal to or greater than the reference value is determined as a candidate for a bad pixel. A message is displayed which requests a selection of whether to determine if the candidate is a bad pixel. The pixel map is updated by reflecting the determined bad pixel on the pixel map.
    • X射线成像装置和更新像素图的方法校正X射线透射图像的不良像素。 通过检测穿透物体的X射线来生成X射线透射图像，并且确定形成X射线透射图像的每个像素的值和与其相邻的附近像素的值之间的差异 像素中的每一个等于或大于参考值。 具有表示等于或大于参考值的差的值的像素被确定为坏像素的候选。 显示一个消息，其请求选择是否确定候选者是否是不良像素。 通过在像素图上反映确定的不良像素来更新像素图。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 10. 发明申请
      US20100018798A1 NOISE SILENCER FOR CONSTRUCTION EQUIPMENT 审中-公开
    • NOISE SILENCER FOR CONSTRUCTION EQUIPMENT
    • 建筑设备噪声防护罩
    • US20100018798A1
    • 2010-01-28
    • US12504317
    • 2009-07-16
    • Beom Seok Jeon , Toshimichi Ikeda , Wook Sung Yuk , Ho Jun Lee
    • Beom Seok Jeon , Toshimichi Ikeda , Wook Sung Yuk , Ho Jun Lee
    • F01N7/00
    • E02F9/00 , E02F9/0866 , F01P11/10 , F01P11/12
    • A noise silencer for construction equipment is used to minimize outward propagation of noises generated from an engine room. The noise silencer is mounted in air intake and/or discharge openings of an engine room, and includes a frame mounted in the one of the air intake and discharge openings of the engine room, and noise damping members fixed to the frame at uniform intervals, and each including a first member, which is disposed inside the engine room in a horizontal direction such that cooling air introduced from outside to inside of the engine room by operation of a cooling fan smoothly flows, and a second member, which is integrally formed with the first member and is disposed outside the engine room so as to be inclined upwardly at a predetermined inclination.
    • 用于施工设备的噪声消音器用于使发动机室产生的噪声的向外传播最小化。 噪声消音器安装在发动机室的进气和/或排气口中，并且包括安装在发动机室的进气和排气孔之一中的框架，以及以均匀间隔固定在框架上的噪声阻尼件， 并且每个包括第一构件，其在水平方向上设置在发动机室内部，使得通过冷却风扇的操作从外部到内部引入的冷却空气平稳地流动;以及第二构件，其与 第一构件，并且设置在发动机室的外侧，以便以预定的倾斜向上倾斜。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
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