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1. 发明授权

US07144560B2 Frame structure for high-temperature denitration apparatus 有权
公开(公告)号：US07144560B2
公开(公告)日：2006-12-05
申请号：US10431426
申请日：2003-05-08
申请人： Hitoshi Koike , Masahiro Takeuchi
发明人： Hitoshi Koike , Masahiro Takeuchi
IPC分类号： B01J8/44 , B01D50/00
CPC分类号： B01D53/74 , B01D53/56
摘要： Each of vertical frame members which constitute a frame body of a high-temperature denitration apparatus and which are erected in a spaced-apart relationship in a direction of exhaust gas flow is provided by a pillar member. The pillar member is an integral combination of a web with upstream and downstream flanges so as to improve thermal conductivity of the same. The web of the pillar member is formed with openings for suppression of thermal capacity to a minimum so as to reduce in weight the web and enhance a temperature rising velocity of the web.

2. 发明申请

US20120234133A1 VEHICLE DRIVING SYSTEM 有权
标题翻译：车辆驾驶系统
公开(公告)号：US20120234133A1
公开(公告)日：2012-09-20
申请号：US13426198
申请日：2012-03-21
申请人： Takefumi Ikegami , Shigetaka Kuroda , Masahiro Takeuchi
发明人： Takefumi Ikegami , Shigetaka Kuroda , Masahiro Takeuchi
IPC分类号： B60K6/54
CPC分类号： B60W20/13 , B60K6/48 , B60K6/547 , B60K2006/4825 , B60K2006/4841 , B60W10/06 , B60W10/08 , B60W10/113 , B60W10/184 , B60W20/00 , B60W30/18127 , B60W30/18136 , B60W30/19 , F16H3/006 , F16H61/21 , F16H61/688 , F16H2200/0047 , Y02T10/6221 , Y02T10/6252 , Y02T10/6286 , Y10T74/19014 , Y10T74/19228
摘要： In a twin-clutch type transmission in which an electric motor is connected to one of transmission shafts, when downshifting is executed during EV running, a braking force is ensured by controlling in a cooperative fashion a regenerative brake and wheel brakes B1 to B4 so as to compensate for the loss of braking force during downshifting by the wheel brakes B1 to B4 or a braking force is ensured by making use of engine braking effects.
摘要翻译：在电动机连接到传动轴之一的双离合器式变速器中，当在EV行驶中执行降档时，通过协同控制再生制动器和车轮制动器B1至B4来确保制动力，从而以补偿由车轮制动器B1至B4降档期间的制动力的损失，或者通过利用发动机制动效果来确保制动力。

3. 发明授权

US08197760B2 Heat medium heating-cooling apparatus and heat medium temperature control method 有权
标题翻译：热介质加热冷却装置和热介质温度控制方法
公开(公告)号：US08197760B2
公开(公告)日：2012-06-12
申请号：US12733725
申请日：2008-09-10
申请人： Yasuaki Akai , Masahiro Yonekura , Masahiro Takeuchi
发明人： Yasuaki Akai , Masahiro Yonekura , Masahiro Takeuchi
IPC分类号： G05D23/00 , B01J19/00
CPC分类号： B01J19/24 , B01J2219/0006 , B01J2219/0009 , B01J2219/00094 , B01J2219/00103 , B01J2219/00105 , F28D1/06 , F28D15/00 , F28D2021/0077
摘要： Provided are a heat medium heating-cooling apparatus and a heat medium temperature control method, which can control the heat medium temperature stably and more efficiently. The heat medium heating-cooling apparatus includes a heat medium heating unit (12) as well as a bypass line (19) thereof with switching valves 20a, 20b switching the direction of a flow of the heat medium to the heat medium heating unit or the bypass line. Decisions are made based on the present temperature (PV) in a reactor (11), a preset target temperature (SV), stable temperature range (α) and control switching temperature (β). According to the resulted four decisions of “stable heating”, “stable cooling”, “inclined heating” and “inclined cooling”, the temperature control according to either of the heating control at a heating control unit or the cooling control at a cooling control unit is conducted.
摘要翻译：提供一种可以稳定且更有效地控制热介质温度的热介质加热冷却装置和热介质温度控制方法。热介质加热冷却装置包括热介质加热单元（12）以及旁路管线（19），切换阀20a，20b将热介质的流动方向切换到热介质加热单元旁路线。基于反应器（11）中的当前温度（PV），预设目标温度（SV），稳定温度范围（α）和控制切换温度（＆bgr））进行决定。根据“稳定加热”，“稳定冷却”，“倾斜加热”和“倾斜冷却”的四个决定，根据加热控制单元的加热控制或冷却控制的冷却控制单位进行。

4. 发明授权

US07790725B2 Thiazolidine derivatives and medicinal use thereof 有权
标题翻译：噻唑烷衍生物及其医药用途
公开(公告)号：US07790725B2
公开(公告)日：2010-09-07
申请号：US11774941
申请日：2007-07-09
申请人： Hiroshi Sakashita , Tomohiro Yoshida , Hiroshi Kitajima , Masahiro Takeuchi , Yoshihito Tanaka , Takuya Yoshimura , Fumihiko Akahoshi , Yoshiharu Hayashi
发明人： Hiroshi Sakashita , Tomohiro Yoshida , Hiroshi Kitajima , Masahiro Takeuchi , Yoshihito Tanaka , Takuya Yoshimura , Fumihiko Akahoshi , Yoshiharu Hayashi
IPC分类号： A61K31/435 , A61K31/496 , C07D401/04 , C07D401/14 , C07D403/04 , C07D403/14
CPC分类号： C07D277/04
摘要： A thiazolidine derivative represented by the formula (I) wherein each symbol is as defined in the specification, and a pharmaceutically acceptable salt thereof exhibit a potent DPP-IV inhibitory activity, and can be provided as an agent for the prophylaxis or treatment of diabetes, an agent for the prophylaxis or treatment of obesity and the like.
摘要翻译：由式（I）表示的噻唑烷衍生物，其中每个符号如说明书中所定义，及其药学上可接受的盐显示出有效的DPP-IV抑制活性，并且可以作为预防或治疗糖尿病，用于预防或治疗肥胖症等的药剂。

5. 发明申请

US20090212816A1 Impedance adjustment circuit 失效
标题翻译：阻抗调节电路
公开(公告)号：US20090212816A1
公开(公告)日：2009-08-27
申请号：US12379464
申请日：2009-02-23
申请人： Hiromu Kato , Masahiro Takeuchi
发明人： Hiromu Kato , Masahiro Takeuchi
IPC分类号： H03H11/30 , H03H11/02 , H03K19/003
CPC分类号： H03H7/40
摘要： Disclosed is an impedance adjustment circuit including a comparator and a resistor control circuit. The comparator compares the resistance value of an external resistor and that of a replica resistor that forms a replica of a terminal resistor. The resistor control circuit includes a replica resistor control counter, a resistor-under-adjustment control signal holding circuit and a monitor circuit. The replica resistor control counter counts up and down based on the comparison result by the comparator to output a control signal to the replica resistor. The resistor-under-adjustment control signal holding circuit holds a control signal that is delivered to the terminal resistor. The monitor circuit receives the state of the counter and an output of the retention circuit and, in case the difference between the count state of the replica resistor control counter and an output of the resistor-under-adjustment control signal holding circuit is within a preset range, delivers the output of the resistor-under-adjustment control signal holding circuit as an input to the resistor-under-adjustment control signal holding circuit.
摘要翻译：公开了一种包括比较器和电阻器控制电路的阻抗调节电路。比较器比较外部电阻的电阻值和形成端子电阻的复制品的复制电阻的电阻值。电阻控制电路包括复制电阻控制计数器，电阻调节下调控制信号保持电路和监视电路。复制电阻控制计数器根据比较器的比较结果向上和向下计数，以将控制信号输出到复制电阻。电阻调节下调节控制信号保持电路保持传送到端子电阻器的控制信号。监视电路接收计数器的状态和保持电路的输出，并且在复制电阻控制计数器的计数状态与电阻调节不足调整控制信号保持电路的输出之间的差在预设值将电阻调节不足的控制信号保持电路的输出作为输入提供给电阻调整不足的控制信号保持电路。

6. 发明申请

US20070104626A1 Heat-transfer-medium heating and cooling apparatus 审中-公开
标题翻译：传热介质加热和冷却设备
公开(公告)号：US20070104626A1
公开(公告)日：2007-05-10
申请号：US11590819
申请日：2006-11-01
申请人： Masahiro Yonekura , Masahiro Takeuchi
发明人： Masahiro Yonekura , Masahiro Takeuchi
IPC分类号： F28D21/00
CPC分类号： B01J19/0013 , B01J2219/00094 , B01J2219/00202 , B01J2219/00238 , F28D1/06 , F28D15/00 , F28D2021/0077
摘要： Disclosed is a heat-transfer-medium heating and cooling apparatus in which a pump which pumps out a heat transfer medium, a heat exchanger which cools the heat transfer medium, a reactor whose temperature is controlled by the heat transfer medium, and a heating unit which heats the heat transfer medium are disposed in a recirculation path. A reserve path which branches upward from a pump-suction-side path extending from the heating unit to the pump and connects to a liquid phase portion of an expansion vessel is provided in the pump-suction-side path.
摘要翻译：公开了一种传热介质加热和冷却装置，其中泵出传热介质的泵，冷却传热介质的热交换器，温度由传热介质控制的反应器和加热单元热传导介质的加热设置在再循环路径中。在泵吸入侧路径上设置有从从加热单元延伸到泵并连接到膨胀容器的液相部分的泵吸入侧路径向上分支的预留路径。

7. 发明授权

US06570264B2 Semiconductor memory device 失效
公开(公告)号：US06570264B2
公开(公告)日：2003-05-27
申请号：US09876056
申请日：2001-06-08
申请人： Takashi Kumagai , Masahiro Takeuchi , Satoru Kodaira , Takafumi Noda
发明人： Takashi Kumagai , Masahiro Takeuchi , Satoru Kodaira , Takafumi Noda
IPC分类号： H01L2711
CPC分类号： H01L27/11 , H01L27/1104 , Y10S257/904
摘要： The invention provides SRAMs that can reduce memory cells in size and correct light proximity effect. Gate electrode layers in a first layer, drain—drain connection layers in a second layer, and drain-gate connection layers in a third layer define conduction layers of a flip-flop. The drain-gate connection layer has an extension section extending in a direction toward the drain-gate connection layer. The drain-gate connection layer 41b has an extension section extending in a direction toward the drain-gate connection layer.

8. 发明授权

US06507124B2 Semiconductor memory device 失效
公开(公告)号：US06507124B2
公开(公告)日：2003-01-14
申请号：US09876068
申请日：2001-06-08
申请人： Takashi Kumagai , Masahiro Takeuchi , Satoru Kodaira , Takafumi Noda
发明人： Takashi Kumagai , Masahiro Takeuchi , Satoru Kodaira , Takafumi Noda
IPC分类号： H01L2711
CPC分类号： H01L27/1104 , G11C11/412 , Y10S257/904
摘要： The invention provides SRAMs that can reduce memory cells in size and correct light proximity effect. Gate electrode layers in a first layer, drain-drain connection layers in a second layer, and drain-gate connection layers in a third layer define connection wirings of a flip-flop. A p+ type well contact region is provided for every two of the memory cells arranged in the Y-axis direction.

9. 发明授权

US06469356B2 Semiconductor memory device having different distances between gate electrode layers 有权
标题翻译：在栅电极层之间具有不同距离的半导体存储器件
公开(公告)号：US06469356B2
公开(公告)日：2002-10-22
申请号：US09876058
申请日：2001-06-08
申请人： Takashi Kumagai , Masahiro Takeuchi , Satoru Kodaira , Takafumi Noda
发明人： Takashi Kumagai , Masahiro Takeuchi , Satoru Kodaira , Takafumi Noda
IPC分类号： H01L2976
CPC分类号： H01L27/1104 , H01L27/0207 , Y10S257/903
摘要： The invention provides SRAMs that can reduce memory cells in size and correct light proximity effect. Gate electrode layers in a first layer, drain-drain connection layers in a second layer, and drain-gate connection layers in a third layer define conduction layers of a flip-flop. A source contact layer of load transistors are located adjacent end sections of the gate electrode layers, and both of the end sections bend outwardly to avoid contact with the source contact layer.
摘要翻译：本发明提供了可以减小存储器单元尺寸并校正光接近效应的SRAM。第一层中的栅极电极层，第二层中的漏极 - 漏极连接层和第三层中的漏极 - 连接层限定了触发器的导电层。负载晶体管的源极接触层位于栅极电极层的端部附近，并且两个端部部分向外弯曲以避免与源极接触层接触。

10. 发明授权

US5831285A Semiconductor static random access memory device 失效
标题翻译：半导体静态随机存取存储器件
公开(公告)号：US5831285A
公开(公告)日：1998-11-03
申请号：US587976
申请日：1996-01-17
申请人： Masahiro Takeuchi , Yasunobu Tokuda
发明人： Masahiro Takeuchi , Yasunobu Tokuda
IPC分类号： G11C11/41 , H01L21/8244 , H01L27/11 , H01L27/108
CPC分类号： H01L27/11 , H01L27/1108 , H01L27/1112
摘要： A first word line connects the gate electrodes of first transfer transistors in adjacent memory cells. A second word line connects the gate electrodes of second transfer transistors in adjacent memory cells. A ground line connects the source regions of first and second driver transistors. The first and second word lines and ground line are formed by a wiring layer different from the wiring layer that forms the gate electrodes of the first and second transfer transistors. The ground line shields the first and second driver transistors, TFTs and the like. Drain contacts include chamfered sides between which the ground line is disposed.
摘要翻译：第一字线连接相邻存储单元中的第一转移晶体管的栅电极。第二字线连接相邻存储单元中的第二传输晶体管的栅电极。接地线连接第一和第二驱动晶体管的源极区域。第一和第二字线和地线由与形成第一和第二转移晶体管的栅电极的布线层不同的布线层形成。接地线屏蔽第一和第二驱动晶体管，TFT等。漏极触点包括设置接地线的倒角侧。

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