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1. 发明申请

US20100009526A1 FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE 有权
标题翻译：第III组氮化物晶体的制造方法和制造装置
公开(公告)号：US20100009526A1
公开(公告)日：2010-01-14
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
发明人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
IPC分类号： H01L21/203
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

2. 发明申请

US20110121311A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体衬底的方法，制造半导体器件的方法，半导体衬底和半导体器件
公开(公告)号：US20110121311A1
公开(公告)日：2011-05-26
申请号：US12943545
申请日：2010-11-10
申请人： Fumitaka SATO , Akihiro HACHIGO , Naoki MATSUMOTO , Yoko MAEDA , Seiji NAKAHATA
发明人： Fumitaka SATO , Akihiro HACHIGO , Naoki MATSUMOTO , Yoko MAEDA , Seiji NAKAHATA
IPC分类号： H01L29/12 , H01L21/18
CPC分类号： H01L21/2654 , H01L21/76254 , H01L29/045 , H01L29/2003 , H01L29/66143 , H01L29/872
摘要： The present invention provides a method for manufacturing a semiconductor substrate including a low-resistance nitride layer laminated on a substrate, a method for manufacturing a semiconductor device, a semiconductor substrate, and a semiconductor device. A method for manufacturing a semiconductor substrate of the present invention includes the following steps: A nitride substrate having a principal surface and a back surface opposite to the principal surface is prepared. Vapor-phase ions are implanted into the back surface of the nitride substrate. The back surface of the nitride substrate is bonded to a dissimilar substrate to form a bonded substrate. The nitride substrate is partially separated from the bonded substrate to form a laminated substrate including the dissimilar substrate and a nitride layer. The laminated substrate is heat-treated at a temperature over 700° C.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该半导体衬底包括层叠在衬底上的低电阻氮化物层，半导体器件的制造方法，半导体衬底和半导体器件。本发明的半导体衬底的制造方法包括以下步骤：准备具有与主面相反的主面和背面的氮化物衬底。气相离子注入到氮化物衬底的背表面中。氮化物衬底的背面与不同的衬底接合以形成键合衬底。氮化物衬底与键合衬底部分地分离以形成包括不同衬底和氮化物层的叠层衬底。层压基板在700℃以上的温度下进行热处理

3. 发明申请

US20090289261A1 GALLIUM NITRIDE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SAME 审中-公开
标题翻译：氮化铬晶体基板及其制造方法
公开(公告)号：US20090289261A1
公开(公告)日：2009-11-26
申请号：US12477642
申请日：2009-06-03
申请人： Fumitaka SATO , Seiji Nakahata
发明人： Fumitaka SATO , Seiji Nakahata
IPC分类号： H01L29/20
CPC分类号： C30B25/04 , C30B25/18 , C30B29/40 , C30B29/406
摘要： A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation single crystal regions (Z), voluminous defect accumulating regions (H) having a c-axis inverse to the c-axis of the low dislocation single crystal regions (Z) and an a-axis parallel with the a-axis of the low dislocation single crystal regions (Z), and 0.1/cm2 to 10/cm2 c-axis gross core regions (F) containing at least one crystal having a c-axis parallel to the c-axis of the low dislocation single crystal regions (Z) and an a-axis different from the a-axis of the low dislocation single crystal regions (Z).
摘要翻译：一种低失真氮化镓晶体基板，包括具有确定的c轴和一定a轴的低位错单晶区域（Z），C平面生长区域（Y）具有平行于低位错单晶区域（Z）的c轴和a轴，具有与低位错单晶区域（Z）的c轴相反的c轴的大量缺陷积聚区域（H）轴向与低位错单晶区域（Z）的a轴平行，以及包含至少一个c轴平行于c-轴的晶体的0.1 / cm 2至10 / cm 2的c轴总芯区域（F）低位错单晶区域（Z）的轴线和与低位错单晶区域（Z）的a轴不同的a轴。

4. 发明申请

US20090108297A1 SEMI-INSULATING NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, AND FIELD-EFFECT TRANSISTOR 审中-公开
标题翻译：半导体绝缘半导体基板及其制造方法，氮化物半导体外延基板和场效应晶体管
公开(公告)号：US20090108297A1
公开(公告)日：2009-04-30
申请号：US12257096
申请日：2008-10-23
申请人： Fumitaka SATO , Seiji NAKAHATA , Makoto KIYAMA
发明人： Fumitaka SATO , Seiji NAKAHATA , Makoto KIYAMA
IPC分类号： H01L29/778 , H01L21/205 , H01L29/205
CPC分类号： C30B25/04 , B82Y10/00 , C30B29/406 , H01L21/02395 , H01L21/02436 , H01L21/0254 , H01L21/02581 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/2003 , H01L29/66469 , H01L29/7786
摘要： A method of manufacturing a semi-insulating nitride semiconductor substrate includes the steps of forming on an underlying substrate, a mask in which dotted or striped coating portions having a width or a diameter Ds from 10 μm to 100 μm are arranged at an interval Dw from 250 μm to 2000 μm, growing a nitride semiconductor crystal on the underlying substrate with an HVPE method at a growth temperature from 1040° C. to 1150° C. by supplying a group III raw material gas and a group V raw material gas of which group V/group III ratio R5/3 is set to 1 to 10 and a gas containing iron, and removing the underlying substrate, to thereby obtain a free-standing semi-insulating nitride semiconductor substrate having a specific resistance not smaller than 1×105 Ωcm and a thickness not smaller than 100 μm. Thus, the semi-insulating nitride semiconductor crystal substrate in which warpage is less and cracking is less likely can be obtained.
摘要翻译：制造半绝缘氮化物半导体衬底的方法包括以下步骤：在下面的衬底上形成掩模，其中具有10μm至100μm的宽度或直径Ds的点状或条纹涂层部分以从D 250毫米到2000毫米，通过HVPE方法在1040℃至1150℃的生长温度下在下面的衬底上生长氮化物半导体晶体，通过提供第III族原料气体和第V族原料气体 V组/ III组比率R5 / 3设定为1〜10，含有铁的气体，除去下面的基板，得到电阻率不小于1×10 5Ω·molm的独立半绝缘氮化物半导体衬底，厚度不小于100毫米。因此，可以获得其翘曲少且开裂不太可能的半绝缘氮化物半导体晶体基板。

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