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1. 发明申请

US20170278671A1 Charged Particle Beam Device 审中-公开
公开(公告)号：US20170278671A1
公开(公告)日：2017-09-28
申请号：US15618203
申请日：2017-06-09
申请人： Hitachi High-Technologies Corporation
发明人： Toshiyuki YOKOSUKA , Chahn LEE , Hideyuki KAZUMI , Hajime KAWANO , Shahedul HOQUE , Kumiko SHIMIZU , Hiroyuki TAKAHASHI
IPC分类号： H01J37/28 , H01J37/20 , H01J37/22 , H01J37/147
CPC分类号： H01J37/28 , H01J37/147 , H01J37/20 , H01J37/22 , H01J2237/2803 , H01J2237/2806 , H01J2237/2817 , H01J2237/2826 , H01J2237/3045
摘要： The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

2. 发明申请

US20160240348A1 Charged Particle Beam Device 有权
标题翻译：带电粒子束装置
公开(公告)号：US20160240348A1
公开(公告)日：2016-08-18
申请号：US15023936
申请日：2014-06-11
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Toshiyuki YOKOSUKA , Chahn LEE , Hideyuki KAZUMI , Hajime KAWANO , Shahedul HOQUE , Kumiko SHIMIZU , Hiroyuki TAKAHASHI
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J37/147 , H01J37/20 , H01J37/22 , H01J2237/2803 , H01J2237/2806 , H01J2237/2817 , H01J2237/2826 , H01J2237/3045
摘要： The scanning charged particle beam microscope according to the present invention is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.
摘要翻译：根据本发明的扫描带电粒子束显微镜的特征在于，在获取FOV（视场）的图像时，设置间隔射束照射点，然后控制偏转器，使得带电粒子束扫描当带电粒子束照射到每个照射点之间的样品上的位置时，比相对于每个照射点的样品照射样品上的位置（对应于每个像素检测的样品上的位置）更快地执行一个信号）。这允许减轻或控制在FOV内发生的微域带电的影响。

3. 发明申请

US20190180979A1 CHARGED PARTICLE BEAM DEVICE 审中-公开
公开(公告)号：US20190180979A1
公开(公告)日：2019-06-13
申请号：US16275775
申请日：2019-02-14
申请人： Hitachi High-Technologies Corporation
发明人： Toshiyuki YOKOSUKA , Chahn LEE , Hideyuki KAZUMI , Hajime KAWANO , Shahedul HOQUE , Kumiko SHIMIZU , Hiroyuki TAKAHASHI
IPC分类号： H01J37/28 , H01J37/20 , H01J37/22 , H01J37/147
CPC分类号： H01J37/28 , H01J37/147 , H01J37/20 , H01J37/22 , H01J2237/2803 , H01J2237/2806 , H01J2237/2817 , H01J2237/2826 , H01J2237/3045
摘要： The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

4. 发明申请

US20180374674A1 Charged Particle Beam Device Having Inspection Scan Direction Based on Scan with Smaller Dose 审中-公开
公开(公告)号：US20180374674A1
公开(公告)日：2018-12-27
申请号：US16118891
申请日：2018-08-31
申请人： Hitachi High-Technologies Corporation
发明人： Hideki ITAI , Kumiko SHIMIZU , Wataru MORI , Hajime KAWANO , Shahedul HOQUE
IPC分类号： H01J37/28 , H01J37/147 , H01J37/22
摘要： A charged particle beam device is provided which minimizes the beam irradiation amount while maintaining a high measurement success rate. The charged particle beam device includes a control device for controlling a scan deflector on the basis of selection of a predetermined number n of frames, wherein the control device controls the scan deflector so that a charged particle beam is selectively scanned on a portion on a sample corresponding to a pixel satisfying a predetermined condition or a region including the portion on the sample from an image obtained by scanning the charged particle beam for a number m of frames (m≥1), the number m of frames being smaller than the number n of frames.

5. 发明申请

US20190035600A1 Charged Particle Beam Device 审中-公开
公开(公告)号：US20190035600A1
公开(公告)日：2019-01-31
申请号：US16071816
申请日：2016-01-29
申请人： Hitachi High-Technologies Corporation
发明人： Kei SAKAI , Satoru YAMAGUCHI , Hideki ITAI , Yasunori TAKASUGI , Kumiko SHIMIZU
IPC分类号： H01J37/28 , H01J37/147 , H01J37/22
摘要： The objective of the present invention is to provide a charged particle beam device for setting, from an image of a trench-like groove or a pit, device conditions for finding a hole or the like provided in the trench or the pit, or measuring a hole or the like provided inside the trench or the like with high accuracy. In the present invention, a charged particle beam device comprises: a deflector for causing a charged particle beam emitted from a charged particle source to perform a scan; a detector for detecting a charged particle obtained on the basis of the scanning of the charged particle beam; and a computation processing device for generating an image on the basis of the output of the detector. In the charged particle beam device, the computation processing device specifies, from within the generated image, a relatively dark region with respect to other parts thereof, and controls the deflector in such a manner that the charged particle beam selectively scans a sample position corresponding to the dark region.

6. 发明申请

US20170323763A1 Charged Particle Beam Device 审中-公开
公开(公告)号：US20170323763A1
公开(公告)日：2017-11-09
申请号：US15329468
申请日：2015-07-27
申请人： Hitachi High-Technologies Corporation
发明人： Hideki ITAI , Kumiko SHIMIZU , Wataru MORI , Hajime KAWANO , Shahedul HOQUE
IPC分类号： H01J37/28 , H01J37/147
CPC分类号： H01J37/28 , H01J37/147 , H01J37/1474 , H01J37/22 , H01J2237/221 , H01J2237/2806 , H01J2237/2817
摘要： The purpose of the present invention is to provide a charged particle beam device with which it is possible to minimize the beam irradiation amount while maintaining a high measurement success rate. The present invention is a charged particle beam device provided with a control device for controlling a scan deflector on the basis of selection of a predetermined number n of frames, wherein the control device controls the scan deflector so that a charged particle beam is selectively scanned on a portion on a sample corresponding to a pixel satisfying a predetermined condition or a region including the portion on the sample from an image obtained by scanning the charged particle beam for a number m of frames (m≧1), the number m of frames being smaller than the number n of frames.

7. 发明申请

US20150371814A1 Charged Particle Radiation Apparatus 有权
标题翻译：带电粒子辐射装置
公开(公告)号：US20150371814A1
公开(公告)日：2015-12-24
申请号：US14764641
申请日：2014-02-05
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Seiichiro KANNO , Masashi FUJITA , Naoya ISHIGAKI , Makoto NISHIHARA , Kumiko SHIMIZU
IPC分类号： H01J37/20 , H01J37/28
CPC分类号： H01J37/20 , H01J37/28 , H01J2237/2001 , H01J2237/24585 , H01J2237/24592 , H01J2237/2817 , H01L21/67248 , H01L21/6831
摘要： The present invention provides a high-throughput scanning electron microscope in which a wafer (9) is held by an electrostatic chuck (10), an image is obtained using an electron beam, and the wafer surface is measured, wherein even in a case where the temperature of the wafer (9) is changed due to the environmental temperature the electron scanning microscope is capable of preventing any loss in resolution or the deterioration of the measurement reproducibility caused by thermal shrinkage accompanied by temperature change of the wafer (9). A drill hole is provided on the rear surface of the electrostatic chuck (10), and a thermometer (34) is secured in place so that the front end is brought into elastic contact with the bottom surface of the drill hole. The output of the thermometer (34) is sent to a computing unit, the computing unit computes a measurement limit time for beginning measurement, based on a predetermined algorithm, from an output value of the thermometer (34), and measuring begins at individual measurement sites after the measurement limit time has elapsed.
摘要翻译：本发明提供一种高通量扫描电子显微镜，其中通过静电卡盘（10）保持晶片（9），使用电子束获得图像，并且测量晶片表面，其中即使在晶片（9）的温度由于环境温度而改变，电子扫描显微镜能够防止由于伴随晶片（9）的温度变化的热收缩而导致的分辨率的损失或测量再现性的劣化。在静电卡盘（10）的后表面上设置有钻孔，并且将温度计（34）固定就位，使得前端与钻孔的底面弹性接触。温度计（34）的输出被发送到计算单元，计算单元基于预定的算法，从温度计（34）的输出值计算开始测量的测量极限时间，并且测量从各个测量开始测量限制时间过后的站点。

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