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    • 9. 发明申请
    • HOLE FORMING METHOD, MEASURING APPARATUS AND CHIP SET
    • 孔形成方法,测量装置和芯片组
    • US20160327513A1
    • 2016-11-10
    • US15104325
    • 2013-12-25
    • HITACHI, LTD.
    • Itaru YANAGIRena AKAHORIKenichi TAKEDA
    • G01N27/447C12Q1/68G01N33/487
    • A pore forming method in which a pore is formed in such a way that a first voltage is applied between electrodes that are disposed with a film in an electrolytic solution therebetween; a second voltage, which is lower than the first voltage, is applied between the electrodes; a current that flows between the electrodes owing to the application of the second voltage is measured; it is judged whether a value of a current is equal to or larger than a predefined threshold; and if the value of the current is smaller than the threshold, the above sequence is repeated until a pore is formed. In this case, the second voltage is a voltage that makes the value (IPF) of the current flowing through the film practically 0. With the use of the above method, a nanopore is formed in the film simply, easily, and accurately.
    • 一种孔形成方法,其中以这样的方式形成孔,即在其间的电解液中设置有薄膜的电极之间施加第一电压; 在电极之间施加低于第一电压的第二电压; 测量由于施加第二电压而在电极之间流动的电流; 判断电流值是否等于或大于预定阈值; 并且如果电流值小于阈值,则重复上述顺序,直到形成孔。 在这种情况下,第二电压是使流过膜的电流的值(IPF)实际上为0的电压。通过使用上述方法,简单,容易且准确地在膜中形成纳米孔。