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1. 发明申请

US20050227453A1 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer 有权
标题翻译： III族氮化物半导体晶体，其制造方法和III族氮化物半导体外延片
公开(公告)号：US20050227453A1
公开(公告)日：2005-10-13
申请号：US10504584
申请日：2003-02-14
申请人： Hisayuki Miki , Tetsuo Sakurai , Mineo Okuyama
发明人： Hisayuki Miki , Tetsuo Sakurai , Mineo Okuyama
IPC分类号： C30B29/38 , C23C16/34 , C30B23/00 , C30B25/00 , C30B25/02 , C30B25/14 , C30B28/12 , C30B28/14 , H01L21/20 , H01L21/205 , H01L21/76 , H01L33/00 , H01L33/12 , H01L33/32 , H01L33/38 , H01L33/42 , H01S5/323 , H01S5/343
CPC分类号： C30B25/02 , C30B25/00 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/38 , H01L33/42
摘要： A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III ratio of 0 to 1,000 to form and grow a Group III nitride semiconductor on a heated substrate and a second step of vapor-phase-growing a Group III nitride semiconductor crystal on the substrate using a Group III raw material and a nitrogen raw material.
摘要翻译：制备III族氮化物半导体晶体的方法包括以0至1000的V / III比率供应第III族原料和V族原料的第一步骤，以在加热的衬底上形成和生长III族氮化物半导体以及使用III族原料和氮原料在基板上气相生长III族氮化物半导体晶体的第二工序。

2. 发明授权

US08236103B2 Group III nitride semiconductor crystal, production method thereof and group III nitride semiconductor epitaxial wafer 有权
标题翻译： III族氮化物半导体晶体，其制造方法和III族氮化物半导体外延片
公开(公告)号：US08236103B2
公开(公告)日：2012-08-07
申请号：US10504584
申请日：2003-02-14
申请人： Hisayuki Miki , Tetsuo Sakurai , Mineo Okuyama
发明人： Hisayuki Miki , Tetsuo Sakurai , Mineo Okuyama
IPC分类号： C30B23/00
CPC分类号： C30B25/02 , C30B25/00 , C30B25/14 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/38 , H01L33/42
摘要： A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III ratio of 0 to 1,000 to form and grow a Group III nitride semiconductor on a heated substrate and a second step of vapor-phase-growing a Group III nitride semiconductor crystal on the substrate using a Group III raw material and a nitrogen raw material.
摘要翻译：制备III族氮化物半导体晶体的方法包括以0至1000的V / III比率供应第III族原料和V族原料的第一步骤，以在加热的衬底上形成和生长III族氮化物半导体以及使用III族原料和氮原料在基板上气相生长III族氮化物半导体晶体的第二工序。

3. 发明授权

US07855386B2 N-type group III nitride semiconductor layered structure 有权
标题翻译： N型III族氮化物半导体层状结构
公开(公告)号：US07855386B2
公开(公告)日：2010-12-21
申请号：US10585744
申请日：2005-04-27
申请人： Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
发明人： Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/025 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/32
摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits.The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.
摘要翻译：本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层所述低浓度层堆叠在所述较高浓度层上。

4. 发明授权

US06852161B2 METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD OF FABRICATING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LIGHT SOURCE USING THE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：制备III族氮化物半导体晶体的方法，制备基于氮化镓的化合物半导体的方法，基于氮化镓的化合物半导体，基于氮化镓的化合物半导体发光器件和使用半导体发光器件的光源
公开(公告)号：US06852161B2
公开(公告)日：2005-02-08
申请号：US10110692
申请日：2001-08-17
申请人： Yasuhito Urashima , Mineo Okuyama , Tetsuo Sakurai , Hisayuki Miki
发明人： Yasuhito Urashima , Mineo Okuyama , Tetsuo Sakurai , Hisayuki Miki
IPC分类号： C30B25/02 , H01L21/20 , H01L21/205 , H01L33/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02491 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/0075
摘要： A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing no nitrogen source, a step of nitriding the particles in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.
摘要翻译：制备III族氮化物半导体晶体的膜的方法包括使用金属材料在不含氮源的气氛中在基板表面上沉积第III族金属的颗粒的步骤，在含有氮源且不含金属材料，以及在其上沉积有颗粒的基板表面上生长III族氮化物半导体晶体的步骤。

5. 发明申请

US20080230800A1 N-Type Group III Nitride Semiconductor Layered Structure 有权
标题翻译： N型III族氮化物半导体分层结构
公开(公告)号：US20080230800A1
公开(公告)日：2008-09-25
申请号：US10585744
申请日：2005-04-27
申请人： Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
发明人： Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
IPC分类号： H01L33/00 , H01L29/22 , H01L21/205
CPC分类号： H01L33/025 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/32
摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.
摘要翻译：本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层所述低浓度层堆叠在所述较高浓度层上。

6. 发明授权

US06268618B1 Electrode for light-emitting semiconductor devices and method of producing the electrode 失效
标题翻译：用于发光半导体器件的电极及其制造方法
公开(公告)号：US06268618B1
公开(公告)日：2001-07-31
申请号：US09073765
申请日：1998-05-07
申请人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
发明人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
IPC分类号： H01L3300
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2933/0016 , H01L2924/00
摘要： An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor. This device electrode is formed by forming a wire-bonding electrode on a portion of the surface of a p-type GaN-base compound semiconductor, forming on the surface of the semiconductor a first layer that is of at least one member selected from the group consisting of Au, Pt and Pd and is formed to overlay the upper surface of the wire-bonding electrode at a portion at which the wire-bonding electrode is located, forming on the first layer a second layer that is of at least one metal selected from the group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In, and forming a light-permeable electrode by heat-treating the first and second layers in an atmosphere that contains oxygen.
摘要翻译：用于发光半导体器件的电极包括形成为与半导体的表面接触的透光电极和与透光电极电接触并形成的导线接合电极与半导体的表面部分接触，至少与半导体接触的区域相对于半导体具有比单位面积的接触电阻高于与半导体接触的透光性电极的区域。该器件电极通过在p型GaN基化合物半导体的表面的一部分上形成引线键合电极而形成，在半导体的表面上形成第一层，该第一层为选自以下的至少一种：由Au，Pt和Pd组成，并且形成为在引线接合电极所在的部分覆盖引线接合电极的上表面，在第一层上形成至少一种选择的金属的第二层从由Ni，Ti，Sn，Cr，Co，Zn，Cu，Mg和In组成的组中，通过在包含氧的气氛中对第一层和第二层进行热处理而形成透光性电极。

7. 发明授权

US07057210B2 Electrode for light-emitting semiconductor devices and method of producing the electrode 失效
公开(公告)号：US07057210B2
公开(公告)日：2006-06-06
申请号：US10800773
申请日：2004-03-16
申请人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
发明人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
IPC分类号： H01L29/205 , H01L23/48
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2933/0016 , H01L2924/00
摘要： An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor. This device electrode is formed by forming a wire-bonding electrode on a portion of the surface of a p-type GaN-base compound semiconductor, forming on the surface of the semiconductor a first layer that is of at least one member selected from the group consisting of Au, Pt and Pd and is formed to overlay the upper surface of the wire-bonding electrode at a portion at which the wire-bonding electrode is located, forming on the first layer a second layer that is of at least one metal selected from the group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In, and forming a light-permeable electrode by heat-treating the first and second layers in an atmosphere that contains oxygen.

8. 发明授权

US06800501B2 Electrode for light-emitting semiconductor devices and method of producing the electrode 失效
公开(公告)号：US06800501B2
公开(公告)日：2004-10-05
申请号：US10136377
申请日：2002-05-02
申请人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
发明人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
IPC分类号： H01L2100
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2933/0016 , H01L2924/00
摘要： An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor. This device electrode is formed by forming a wire-bonding electrode on a portion of the surface of a p-type GaN-base compound semiconductor, forming on the surface of the semiconductor a first layer that is of at least one member selected from the group consisting of Au, Pt and Pd and is formed to overlay the upper surface of the wire-bonding electrode at a portion at which the wire-bonding electrode is located, forming on the first layer a second layer that is of at least one metal selected from the group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In, and forming a light-permeable electrode by heat-treating the first and second layers in an atmosphere that contains oxygen.

9. 发明授权

US06403987B1 Electrode for light-emitting semiconductor devices 失效
标题翻译：用于发光半导体器件的电极
公开(公告)号：US06403987B1
公开(公告)日：2002-06-11
申请号：US09694325
申请日：2000-10-24
申请人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
发明人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
IPC分类号： H01L3300
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2933/0016 , H01L2924/00
摘要： An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor. This device electrode is formed by forming a wire-bonding electrode on a portion of the surface of a p-type GaN-base compound semiconductor, forming on the surface of the semiconductor a first layer that is of at least one member selected from the group consisting of Au, Pt and Pd and is formed to overlay the upper surface of the wire-bonding electrode at a portion at which the wire-bonding electrode is located, forming on the first layer a second layer that is of at least one metal selected from the group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In, and forming a light-permeable electrode by heat-treating the first and second layers in an atmosphere that contains oxygen.
摘要翻译：用于发光半导体器件的电极包括形成为与半导体的表面接触的透光电极和与透光电极电接触并形成的导线接合电极与半导体的表面部分接触，至少与半导体接触的区域相对于半导体具有比单位面积的接触电阻高于与半导体接触的透光性电极的区域。该器件电极通过在p型GaN基化合物半导体的表面的一部分上形成引线键合电极而形成，在半导体的表面上形成第一层，该第一层为选自以下的至少一种：由Au，Pt和Pd组成，并且形成为在引线接合电极所在的部分处覆盖引线接合电极的上表面，在第一层上形成至少一种选择的金属的第二层从由Ni，Ti，Sn，Cr，Co，Zn，Cu，Mg和In组成的组中，通过在包含氧的气氛中对第一层和第二层进行热处理而形成透光性电极。

10. 发明授权

US06326223B1 Electrode for light-emitting semiconductor devices and method of producing the electrode 有权
公开(公告)号：US06326223B1
公开(公告)日：2001-12-04
申请号：US09694319
申请日：2000-10-24
申请人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
发明人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
IPC分类号： H01L2100
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2933/0016 , H01L2924/00
摘要： An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor. This device electrode is formed by forming a wire-bonding electrode on a portion of the surface of a p-type GaN-base compound semiconductor, forming on the surface of the semiconductor a first layer that is of at least one member selected from the group consisting of Au, Pt and Pd and is formed to overlay the upper surface of the wire-bonding electrode at a portion at which the wire-bonding electrode is located, forming on the first layer a second layer that is of at least one metal selected from the group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In, and forming a light-permeable electrode by heat-treating the first and second layers in an atmosphere that contains oxygen.

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