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1. 发明申请

US20120238094A1 CMP POLISHING SOLUTION AND POLISHING METHOD 有权
标题翻译： CMP抛光溶液和抛光方法
公开(公告)号：US20120238094A1
公开(公告)日：2012-09-20
申请号：US13510273
申请日：2011-01-04
申请人： Hisataka Minami , Jin Amanokura , Sou Anzai
发明人： Hisataka Minami , Jin Amanokura , Sou Anzai
IPC分类号： C09K13/06 , H01L21/306
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/30625 , H01L21/32115 , H01L21/7684
摘要： The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.
摘要翻译：本发明的CMP抛光液包含含有选自第8,11,12和13族金属中的至少一种金属的金属盐，1,2,4-三唑，磷酸，氧化剂和磨粒。本发明的抛光方法包括在具有研磨布的至少一层钯层上抛光，同时在具有钯层的基底的钯层与研磨布之间提供CMP抛光液的步骤，其中CMP抛光液包括金属含有选自第8,11,12和13族金属中的至少一种金属的盐，1,2,4-三唑，磷酸，氧化剂和磨料颗粒。

2. 发明授权

US09799532B2 CMP polishing solution and polishing method 有权
公开(公告)号：US09799532B2
公开(公告)日：2017-10-24
申请号：US13510273
申请日：2011-01-04
申请人： Hisataka Minami , Jin Amanokura , Sou Anzai
发明人： Hisataka Minami , Jin Amanokura , Sou Anzai
IPC分类号： H01L21/302 , H01L21/461 , B44C1/22 , C03C15/00 , C03C25/68 , C25F3/00 , C09K13/00 , H01L21/321 , H01L21/306 , B24B37/04 , C09G1/02 , C09K3/14 , H01L21/768
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/30625 , H01L21/32115 , H01L21/7684
摘要： The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.

3. 发明授权

US08481428B2 Polishing slurry and polishing method 有权
公开(公告)号：US08481428B2
公开(公告)日：2013-07-09
申请号：US13299699
申请日：2011-11-18
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

4. 发明申请

US20090156007A1 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US20090156007A1
公开(公告)日：2009-06-18
申请号：US12320752
申请日：2009-02-04
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料，优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

5. 发明授权

US08821750B2 Metal polishing slurry and polishing method 有权
标题翻译：金属抛光浆和抛光方法
公开(公告)号：US08821750B2
公开(公告)日：2014-09-02
申请号：US12527607
申请日：2008-02-22
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Takashi Shinoda , Shigeru Nobe
IPC分类号： C09G1/02 , C23F1/18 , C23F1/26 , H01L21/304 , H01L21/306
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F1/18 , C23F1/26 , H01L21/30625 , H01L21/3212
摘要： The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.
摘要翻译：本发明涉及含有磨粒，金属氧化物溶解剂和水的金属抛光浆料，其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。使用本发明的金属研磨浆，可以得到层状电介质层的研磨速度高的金属研磨浆料，并且抛光面的平坦度高。这种金属抛光浆料可以提供适合于制造更细和更薄，尺寸精度和电特性优异的可靠性高的半导体器件的方法，并且可以降低成本。

6. 发明授权

US08084362B2 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US08084362B2
公开(公告)日：2011-12-27
申请号：US11802813
申请日：2007-05-25
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有水和研磨剂的研磨浆料，其中研磨剂的表面用烷基并且优选还包含金属氧化剂，水溶性聚合物和金属抑制剂。

7. 发明授权

US07994058B2 Polishing slurry and polishing method 有权
公开(公告)号：US07994058B2
公开(公告)日：2011-08-09
申请号：US11802813
申请日：2007-05-25
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

8. 发明申请

US20070232197A1 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US20070232197A1
公开(公告)日：2007-10-04
申请号：US11802813
申请日：2007-05-25
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有水和研磨剂的研磨浆料，其中研磨剂的表面用烷基并且优选还包含金属氧化剂，水溶性聚合物和金属抑制剂。

9. 发明申请

US20120064721A1 POLISHING SLURRY AND POLISHING METHOD 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US20120064721A1
公开(公告)日：2012-03-15
申请号：US13299699
申请日：2011-11-18
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料，优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

10. 发明授权

US08084363B2 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US08084363B2
公开(公告)日：2011-12-27
申请号：US12320752
申请日：2009-02-04
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料，优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

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