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1. 发明授权

US4483651A Automatic apparatus for continuous treatment of leaf materials with gas plasma 失效
标题翻译：用气体等离子体连续处理叶片材料的自动装置
公开(公告)号：US4483651A
公开(公告)日：1984-11-20
申请号：US292417
申请日：1981-08-13
申请人： Hisashi Nakane , Akira Uehara , Shigekazu Miyazaki , Hiroyuki Kiyota , Isamu Hijikata
发明人： Hisashi Nakane , Akira Uehara , Shigekazu Miyazaki , Hiroyuki Kiyota , Isamu Hijikata
IPC分类号： H01L21/302 , B65G47/53 , B65G47/64 , B65G49/07 , H01L21/3065 , B65G47/24
CPC分类号： B65G47/54 , B65G47/643 , Y10S414/139
摘要： The invention provides a novel automatic apparatus for the continuous treatment of wafer materials, e.g. of silicon semiconductor, with gas plasma provided with a plural number of the gas plasma reaction chambers, transfer devices for bringing the wafer materials into and out of each of the reaction chambers and automatic control mechanism for controlling the individual parts of the apparatus in linkage operation. The transfer devices are composed of a main transfer conveyor extending in parallel with the array of the reaction chambers and over whole length of the array, a plural number of branched transfer conveyors each connecting one of the reaction chambers with the main transfer conveyor, a mechanism for transferring the wafer between the main transfer conveyor and one of the branched transfer conveyor and a mechanism for bringing the wafer material from the branched transfer conveyor to the gas plasma reaction chamber or vice versa. Transferring and gas plasma treatment of the wafer materials can be performed in continuous and successive linkage operations by virtue of the automatic control mechanism. The inventive apparatus is very advantageous in the continuous and concurrent handling of a plural number of wafer materials in the process of the gas plasma treatment so that excellent productivity of the process and highly uniform quality of the treated wafer materials are ensured.
摘要翻译：本发明提供了一种用于连续处理晶片材料的新型自动装置，例如，的硅半导体，其中具有多个气体等离子体反应室的气体等离子体，用于将晶片材料进出每个反应室的转移装置和用于在联动操作中控制装置的各个部件的自动控制机构。传送装置由与反应室的阵列平行延伸并且在整个长度上的主传送输送机组成，多个分支传送输送机将每个反应室中的一个连接到主传送输送机，一个机构用于在主传送输送机和分支传送输送机之一之间传送晶片，以及用于将晶片材料从分支转移输送器引入气体等离子体反应室的机构，反之亦然。可以通过自动控制机构在连续和连续的连动操作中进行晶片材料的转移和气体等离子体处理。本发明的装置在气体等离子体处理过程中连续和同时处理多个晶片材料是非常有利的，因此确保了处理的优异的生产率和经过处理的晶片材料的高度均匀的质量。

2. 发明授权

US4336438A Apparatus for automatic semi-batch sheet treatment of semiconductor wafers by plasma reaction 失效
标题翻译：用于通过等离子体反应自动半批片处理半导体晶片的装置
公开(公告)号：US4336438A
公开(公告)日：1982-06-22
申请号：US187748
申请日：1980-09-16
申请人： Akira Uehara , Hiroyuki Kiyota , Shigekazu Miyazaki , Hisashi Nakane
发明人： Akira Uehara , Hiroyuki Kiyota , Shigekazu Miyazaki , Hisashi Nakane
IPC分类号： H01L21/302 , B65G49/07 , H01L21/3065 , H01L21/677 , B23K9/00 , B65H1/06
CPC分类号： H01L21/67778 , H01L21/67706
摘要： An apparatus for automatic semi-batch sheet treatment of wafers such as high-purity silicon semiconductor wafers by plasma reaction is disclosed. The apparatus comprises a wafer carrying mechanism, a reaction chamber with an opening at the bottom, a wafer table disposed beneath the opening and provided with a sub-table for mounting the wafer, and control devices for driving the above elements in linkage motion. The wafer carrying mechanism is substantially composed of a conveyor for carrying a wafer to be treated, a pair of open-close type wafer carrying wire conveyors which are spaced in parallel at a certain distance and open and close in linkage motion so that the wafer table may pass vertically therethrough to be fixed vacuum-tightly to the reaction chamber, a mechanism for opening and closing the wire conveyors and a treated wafer carrying conveyor. The subtable is vertically movable and capable of passing the wire conveyors when closed.
摘要翻译：公开了一种用于通过等离子体反应对诸如高纯度硅半导体晶片的晶片进行自动半批片处理的设备。该装置包括晶片承载机构，在底部具有开口的反应室，设置在开口下方并设置有用于安装晶片的子台的晶片台，以及用于以联动方式驱动上述元件的控制装置。晶片承载机构基本上由用于承载要处理的晶片的输送机构成，一对开闭型晶片承载线输送机，它们以一定的距离并联连接并以联动的方式打开和关闭，使晶片台可以垂直地穿过其，以真空密封地固定到反应室，用于打开和关闭线输送机的机构和经处理的晶片承载输送机。子桌子是可垂直移动的，并且能够在关闭时通过电线输送机。

3. 发明授权

US4550239A Automatic plasma processing device and heat treatment device 失效
标题翻译：自动等离子处理装置和热处理装置
公开(公告)号：US4550239A
公开(公告)日：1985-10-29
申请号：US424503
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： B65G49/07 , H01L21/677 , B23K9/00
CPC分类号： H01L21/67778 , H01L21/67781 , Y10S156/912 , Y10S414/137 , Y10S414/14
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers can be simultaneously processed with plasma. The automatic plasma processing device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for taking out the wafers one by one from the cassette and for feeding the same, a holding frame for receiving the wafers one by one from the feeding mechanism and for holding the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The device is simplified in construction and can automatically and successively process a large number of wafers, while at the same time having a compact construction.
摘要翻译：一种具有基本上垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片可以与等离子体同时处理。自动等离子体处理装置包括适于在其中容纳多个晶片的容器盒，用于从盒中一个接一个地取出晶片并用于馈送的馈送机构，用于从该盒子一个接一个地接收晶片的保持框架进给机构并保持在其中的驱动机构，用于使保持框架上下移入等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机构的控制系统。该装置的结构简化，并且可以自动并连续地处理大量的晶片，同时具有紧凑的结构。

4. 外观设计

USD291413S Wafer holding frame 失效
公开(公告)号：USD291413S
公开(公告)日：1987-08-18
申请号：US689661
申请日：1985-01-08
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
设计人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama

5. 发明授权

US4578559A Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US4578559A
公开(公告)日：1986-03-25
申请号：US649164
申请日：1984-09-10
申请人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
发明人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
IPC分类号： C23F4/00 , C03C15/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B23K9/00 , H01L21/306
CPC分类号： H01J37/32431 , C03C15/00
摘要： A plasma etching method employing a parallel-plate type plasma etching device which comprises a reaction chamber, a substantially plate-like ground electrode and a substantially plate-like counter electrode both disposed in parallel with each other within the reaction chamber. The method includes the steps of placing a material to be etched on the ground electrode and carrying out an electric discharge with a spacing between the electrodes being substantially 3 to 10 mm. Etching is performed exactly at a high speed in an anisotropic form without requiring a high degree of vacuum.
摘要翻译：使用平行板式等离子体蚀刻装置的等离子体蚀刻方法，其包括在反应室内彼此平行地设置的反应室，大致板状的接地电极和大致板状的对电极。该方法包括以下步骤：将待蚀刻的材料放置在接地电极上，并执行电极间间隔大致为3至10mm的放电。蚀刻完全以各向异性形式的高速完成，而不需要高度的真空度。

6. 发明授权

US4550242A Automatic plasma processing device and heat treatment device for batch treatment of workpieces 失效
标题翻译：自动等离子处理装置和热处理装置，用于批量处理工件
公开(公告)号：US4550242A
公开(公告)日：1985-10-29
申请号：US424287
申请日：1982-09-27
申请人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
发明人： Akira Uehara , Isamu Hijikata , Hisashi Nakane , Muneo Nakayama
IPC分类号： H01L21/677 , B23K9/00
CPC分类号： H01L21/67781 , H01L21/67778 , Y10S156/912 , Y10S414/137
摘要： An automatic plasma processing device having a substantially vertically disposed plasma chamber in which a plurality of semiconductor wafers are processed with plasma simultaneously. The device comprises a container cassette adapted to contain a plurality of wafers therein, a feeding mechanism for feeding the cassette to a predetermined position, a replacing mechanism for taking out the wafers from the cassette placed at the predetermined position, a holding frame operable to receive the wafers from the replacing mechanism and hold the same therein, a driving mechanism for moving the holding frame up and down into and out of the plasma chamber, a plasma generating mechanism for generating plasma in the plasma chamber, and a control system for controlling the aforesaid mechanisms. The automatic plasma processing device has a simplified construction and automatically and successively processes a large number of wafers, while at the same time being compact.
摘要翻译：一种具有基本垂直设置的等离子体室的自动等离子体处理装置，其中多个半导体晶片同时被等离子体处理。该装置包括适于在其中容纳多个晶片的容器盒，用于将盒子进给到预定位置的进给机构，用于从放置在预定位置的盒子取出晶片的替换机构，可操作以接收来自替换机构的晶片并保持在其中，用于将保持框架上下移入和移出等离子体室的驱动机构，用于在等离子体室中产生等离子体的等离子体产生机构，以及用于控制上述机制。自动等离子体处理装置具有简化的结构，并且自动并连续地处理大量晶片，同时紧凑。

7. 发明授权

US4465553A Method for dry etching of a substrate surface 失效
标题翻译：用于干蚀刻衬底表面的方法
公开(公告)号：US4465553A
公开(公告)日：1984-08-14
申请号：US551898
申请日：1983-11-15
申请人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
发明人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： The invention provides a method for fine pattern-wise etching of a surface layer on a substrate such as semiconductor silicon wafers in a dry process by use of a gaseous mixture of pentafluorochloroethane and sulfur hexafluoride as the etching gas to support the plasma atmosphere. The inventive method is advantageous in the compatibility of the requirements for a large etching rate and a high precision of the fine patterning in contrast to the generally accepted understanding that these two requirements are not compatible with each other since an etching gas having a high etching rate causes remarkable side etching to decrease the precision of the desired patterning.
摘要翻译：本发明提供一种通过使用五氟氯乙烷和六氟化硫的气体混合物作为蚀刻气体在干法中在诸如半导体硅晶片的基板上精细图案化蚀刻表面层以支持等离子体气氛的方法。本发明的方法在与蚀刻速率高的蚀刻气体之间相互不兼容的普遍接受的理解中，与蚀刻速率大的精度要求和高精度图案化的要求相兼容，导致显着的侧面蚀刻以降低所需图案的精度。

8. 发明授权

US4318767A Apparatus for the treatment of semiconductor wafers by plasma reaction 失效
标题翻译：用于通过等离子体反应处理半导体晶片的装置
公开(公告)号：US4318767A
公开(公告)日：1982-03-09
申请号：US208845
申请日：1980-11-20
申请人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
发明人： Isamu Hijikata , Akira Uehara , Hisashi Nakane
IPC分类号： H01L21/302 , C23C14/56 , C23C16/54 , H01L21/3065 , H01L21/677 , C23F1/02
CPC分类号： H01L21/67748 , C23C14/566 , C23C16/54 , Y10S414/137 , Y10S414/139
摘要： An apparatus for the treatment of semiconductor wafers by plasma reaction is disclosed. The apparatus comprises a first wafer carrying means for a wafer to be treated, a reaction chamber, a second wafer carrying means for a treated wafer, and a control means for driving respective elements thereof in linkage motion. The first wafer carrying means has a first arm type wafer carrying means, which comprises a pair of guide rails, a pair of sliders mounted on the guide rails, respectively, and a pair of first arms for carrying the wafer to be treated. The reaction chamber is provided with a pair of slits for taking the wafer into and out of the reaction chamber, a pair of open-close type vacuum sealing devices mounted on the slits, respectively. Similarly, the second wafer carrying means has a second arm type wafer carrying means. The first and second wafer carrying means are preferably placed in a preliminary vacuum chamber, whereby a high vacuum in the reaction chamber can readily be obtained to be suitable for use in an etching device for aluminum wiring, and the like.
摘要翻译：公开了一种通过等离子体反应处理半导体晶片的装置。该装置包括用于待处理晶片的第一晶片承载装置，反应室，用于经处理的晶片的第二晶片承载装置，以及用于驱动其相应元件连动运动的控制装置。第一晶片承载装置具有第一臂型晶片承载装置，其包括一对导轨，分别安装在导轨上的一对滑块和用于承载待处理晶片的一对第一臂。反应室设有用于将晶片进出反应室的一对狭缝，分别安装在狭缝上的一对开 - 闭式真空密封装置。类似地，第二晶片承载装置具有第二臂型晶片承载装置。第一和第二晶片承载装置优选地放置在初级真空室中，由此可以容易地获得反应室中的高真空度，以适合用于铝布线的蚀刻装置等。

9. 发明授权

US4245154A Apparatus for treatment with gas plasma 失效
标题翻译：用气体等离子体处理的装置
公开(公告)号：US4245154A
公开(公告)日：1981-01-13
申请号：US919856
申请日：1978-06-28
申请人： Akira Uehara , Hiroyuki Kiyota , Hisashi Nakane , Shozo Toda
发明人： Akira Uehara , Hiroyuki Kiyota , Hisashi Nakane , Shozo Toda
IPC分类号： H01L21/302 , H01J37/32 , H01L21/3065 , G02B5/14
CPC分类号： H01J37/32935
摘要： An improved apparatus for plasma treatment of silicon semiconductor wafers is proposed in which the end point of the plasma etching or ashing can be readily detected by monitoring with an optical fiberscope penetrating the wall of the plasma reaction chamber with one terminal located inside the plasma reaction chamber with a condenser lens attached thereto and the other terminal located outside the plasma reaction chamber at a distanced position free from the influence of the high frequency electric field inherent to plasma generation which otherwise interferes with the photoelectric recording by the photocell connected to the outer terminal of the optical fiberscope.
摘要翻译：提出了一种用于硅半导体晶片的等离子体处理的改进装置，其中等离子体蚀刻或灰化的终点可以通过利用位于等离子体反应室内的一个端子穿透等离子体反应室的壁的光纤穿透镜进行监测来容易地检测其上安装有聚光透镜，而另一个端子位于等离子体反应室外部的距离位置，不受等离子体产生固有的高频电场的影响，否则会干扰连接到外部端子的光电池的光电记录光纤镜。

10. 发明授权

US5584647A Object handling devices 失效
标题翻译：对象处理设备
公开(公告)号：US5584647A
公开(公告)日：1996-12-17
申请号：US006162
申请日：1993-01-19
申请人： Akira Uehara , Isamu Hijikata , Mitsuaki Minato
发明人： Akira Uehara , Isamu Hijikata , Mitsuaki Minato
IPC分类号： B25J9/06 , B25J9/04 , B25J21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68707 , B25J21/005 , B25J9/042 , H01L21/67742 , Y10S414/135 , Y10T74/20207
摘要： An object handling device successively transfers objects such as semiconductor wafers. The object handling device includes first and second collapsible arm units having hands for holding objects, a first drive shaft for selectively extending and contracting the first arm unit, a second drive shaft for selectively extending and contracting the second arm unit, a third drive shaft for turning the first and second arm units while keeping the first and second arm units in a relative positional relationship, the first, second, and third drive shafts being disposed coaxially with each other, and an actuator mechanism for angularly moving the first, second, and third drive shafts about their own axes independently of each other.
摘要翻译：物体处理装置连续地传送诸如半导体晶片的物体。物体处理装置包括具有用于保持物体的手的第一和第二可折叠臂单元，用于选择性地延伸和收缩第一臂单元的第一驱动轴，用于选择性地延伸和收缩第二臂单元的第二驱动轴，用于转动第一和第二臂单元，同时保持第一和第二臂单元处于相对位置关系，第一，第二和第三驱动轴彼此同轴设置;以及致动器机构，用于将第一和第二臂单元第三驱动轴围绕它们自己的轴彼此独立。

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