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    • 1. 发明授权
    • Polishing pad, polishing method, and polishing machine for mirror-polishing semiconductor wafers
    • 抛光垫,抛光方法和用于镜面抛光半导体晶片的抛光机
    • US06306021B1
    • 2001-10-23
    • US09237881
    • 1999-01-27
    • Hisashi MasumuraMakoto KobayashiTeruaki FukamiTsutomu TakakuMamoru Okada
    • Hisashi MasumuraMakoto KobayashiTeruaki FukamiTsutomu TakakuMamoru Okada
    • B24B500
    • B24B37/22B24B37/24
    • There is disclosed a polishing pad for mirror-polishing a semiconductor wafer, especially in a finish polishing process, by use of a polishing machine which includes a turn table on which a polishing pad is attached, a unit for feeding a polishing agent onto a surface of the polishing pad, and a mechanism for pressing a semiconductor wafer onto the surface of the polishing pad. The polishing pad includes a top layer formed of a porous soft material, a bottom layer formed of a rubber elastomer, and an intermediate layer formed of a hard plastic sheet. The hard plastic sheet is disposed between the top layer and the bottom layer and is bonded to the bottom layer. In the polishing pad, undulation produced in the bottom layer due to a horizontal force generated during polishing is prevented from being transferred to the top layer of the polishing pad, and unevenness in polishing stock removal stemming from warpage or undulation of a wafer itself can be mitigated.
    • 公开了一种用于对半导体晶片进行镜面抛光的抛光垫,特别是在精抛光工艺中,通过使用抛光机,该抛光机包括其上安装有抛光垫的转台,用于将抛光剂供给到表面上的单元 的抛光垫,以及用于将半导体晶片压到抛光垫的表面上的机构。 抛光垫包括由多孔软质材料形成的顶层,由橡胶弹性体形成的底层和由硬塑料片形成的中间层。 硬塑料片设置在顶层和底层之间并结合到底层。 在抛光垫中,由于抛光期间产生的水平力,底层产生的波动被转移到抛光垫的顶层,并且由晶片本身的翘曲或起伏引起的抛光原料去除的不均匀性可以是 缓解
    • 2. 发明申请
    • N-Acetylglucosamine Tablet Disintegrating In Oral Cavity And Process For Producing The Same
    • N-乙酰葡萄糖胺片在口腔中的分解及其生产方法
    • US20070281009A1
    • 2007-12-06
    • US11722955
    • 2005-12-26
    • Hisayo KamisonoMamoru OkadaYoshinari TagataMasatami Nakashima
    • Hisayo KamisonoMamoru OkadaYoshinari TagataMasatami Nakashima
    • A61K31/70A61K9/20A61P19/02
    • A61K9/2018A61K9/0056A61K31/015A61K31/203A61K31/7008
    • It is intended to provide an N-acetylglucosamine tablet, with which N-acetylglucosamine can be taken in an amount at which a physiological activity can be expected in a small number of tablets, and which has an excellent disintegrating property and solubility in the oral cavity and has an adequate hardness to such an extent that it is not difficult to handle; and a process for producing the same. A saccharide having low moldability is mixed with or sprayed on N-acetylglucosamine to perform coating and/or granulation, and a saccharide having high moldability is mixed with the obtained granulated matter to perform molding, whereby the N-acetylglucosamine tablet disintegrating in oral cavity which has a tablet hardness of 5 to 20 kgf and a mass per tablet of 1,000 to 3,000 mg, and which rapidly disintegrates and dissolves in the oral cavity is obtained. The N-acetylglucosamine tablet disintegrating in oral cavity preferably contains 30 to 90% by mass of N-acetylglucosamine, and preferably contains 500 to 2,000 mg of N-acetylglucosamine per tablet.
    • 本发明提供一种N-乙酰氨基葡糖胺片剂,N-乙酰氨基葡糖胺可以以少量片剂预期的生理活性的量摄入N-乙酰葡糖胺,并且在口腔中具有优异的崩解性和溶解性 并且具有足够的硬度至不难处理的程度; 及其制造方法。 将具有低成型性的糖与N-乙酰葡糖胺混合或喷雾以进行包衣和/或造粒,并将具有高成型性的糖与所得颗粒物混合进行成型,由此N-乙酰葡糖胺片在口腔中崩解, 片剂硬度为5〜20kgf,每片剂量为1,000〜3,000mg,能够快速地分解并溶解于口腔。 在口腔中崩解的N-乙酰葡糖胺片剂优选含有30〜90质量%的N-乙酰葡糖胺,优选每片含有500〜2000mg N-乙酰葡糖胺。
    • 4. 发明授权
    • Method for producing semiconductor wafer and semiconductor wafer
    • 半导体晶片和半导体晶片的制造方法
    • US07507146B2
    • 2009-03-24
    • US11666082
    • 2005-10-12
    • Tadahiro KatoMasayoshi SekizawaMamoru OkadaHisashi Kijima
    • Tadahiro KatoMasayoshi SekizawaMamoru OkadaHisashi Kijima
    • B24B1/00
    • H01L21/02008B24B9/065B24B37/08H01L21/02021
    • The present invention is a method for producing a semiconductor wafer, comprising: at least a double-side polishing step; and a chamfered-portion polishing step; wherein as a first chamfered-portion polishing step, at least, a chamfered portion of the wafer is polished so that a chamfered surface of each of main surface sides in the chamfered portion is in contact with a polishing pad; then the double-side polishing is performed; as a second chamfered-portion polishing step, at least, the chamfered portion of the wafer is polished so that an end surface of the chamfered portion is in contact with a polishing pad and so that both main surfaces of the wafer are not in contact with a polishing pad. Thereby, when a semiconductor wafer is produced, scratch and such generated in the chamfered portion in a double-side polishing process can be removed and, excessive polishing in a peripheral portion of a main surface can be prevented from being caused in polishing a chamfered portion. Therefore, a method for producing a semiconductor wafer having a high flatness even in the vicinity of a chamfered portion, and the semiconductor wafer are provided.
    • 本发明是一种半导体晶片的制造方法,其特征在于,包括:至少双面研磨工序; 和倒角部分抛光步骤; 其中,作为第一倒角部分研磨工序,至少对所述晶片的倒角部进行研磨,使得所述倒角部的各主面侧的倒角面与抛光垫接触; 然后进行双面抛光; 作为第二倒角部分抛光步骤,至少抛光晶片的倒角部分,使得倒角部分的端面与抛光垫接触,并且晶片的两个主表面都不与 抛光垫 因此,当制造半导体晶片时,可以消除在双面抛光工艺中的倒角部分产生的刮痕和产生,并且可以防止在主表面的周边部分中的抛光过度抛光倒角部分 。 因此,提供了即使在倒角部附近也具有高平坦度的半导体晶片的制造方法和半导体晶片。
    • 5. 发明授权
    • Separable slide fastener
    • 可分离拉链
    • US5913481A
    • 1999-06-22
    • US979785
    • 1997-11-26
    • Akira MatsukiMamoru OkadaShigeyoshi Takasawa
    • Akira MatsukiMamoru OkadaShigeyoshi Takasawa
    • A44B19/38A44B19/60A44B19/00
    • A44B19/60Y10T24/2593Y10T24/2595
    • In a separable slide fastener, a succession of discrete fastener elements molded on a pair of parallel connecting yarns at regular distances are folded individually in a U-shape about an inner edge of each of opposed fastener tapes and are attached by sewing threads. Several of the fastener elements are removed from a bottom end portion of each fastener tape by cutting the connecting yarns with corresponding part of the sewing threads remaining uncut as cores. Each of upper and lower legs of a lowermost one of said fastener elements is flatted to form a small-thickness portion. An insertion pin of a separable bottom stop assembly is attached to the bottom end portion of one fastener tape by clenching so as to hold the small-thickness portions and the cores, and a box pin is attached to the bottom end portion of the other fastener tape in the same manner.
    • 在可分离的拉链中,以一定距离模制在一对平行连接纱线上的一系列离散的紧固件元件围绕每个相对的拉链带的内边缘分别折叠成U形,并通过缝纫线附着。 通过切割连接纱线,几个紧固件元件从每个拉链带的底端部分去除,其中缝合线的相应部分未切割为芯。 所述紧固元件中最下面的一个的上腿和下腿中的每一个被平坦化以形成小厚度部分。 可分离的底部止动组件的插销通过紧固而附接到一个拉链带的底端部分,以便保持小厚度部分和芯部,并且盒销附接到另一紧固件的底端部分 胶带以同样的方式。
    • 6. 发明申请
    • Method for Producing Semiconductor Wafer and Semiconductor Wafer
    • 生产半导体晶片和半导体晶圆的方法
    • US20080096474A1
    • 2008-04-24
    • US11666082
    • 2005-10-12
    • Tadahiro KatoMasayoshi SekizawaMamoru OkadaHisashi Kijima
    • Tadahiro KatoMasayoshi SekizawaMamoru OkadaHisashi Kijima
    • B24B7/26B24B29/02
    • H01L21/02008B24B9/065B24B37/08H01L21/02021
    • The present invention is a method for producing a semiconductor wafer, comprising: at least a double-side polishing step; and a chamfered-portion polishing step; wherein as a first chamfered-portion polishing step, at least, a chamfered portion of the wafer is polished so that a chamfered surface of each of main surface sides in the chamfered portion is in contact with a polishing pad; then the double-side polishing is performed; as a second chamfered-portion polishing step, at least, the chamfered portion of the wafer is polished so that an end surface of the chamfered portion is in contact with a polishing pad and so that both main surfaces of the wafer are not in contact with a polishing pad. Thereby, when a semiconductor wafer is produced, scratch and such generated in the chamfered portion in a double-side polishing process can be removed and, excessive polishing in a peripheral portion of a main surface can be prevented from being caused in polishing a chamfered portion. Therefore, a method for producing a semiconductor wafer having a high flatness even in the vicinity of a chamfered portion, and the semiconductor wafer are provided.
    • 本发明是一种半导体晶片的制造方法,其特征在于,包括:至少双面研磨工序; 和倒角部分抛光步骤; 其中,作为第一倒角部分研磨工序,至少对所述晶片的倒角部进行研磨,使得所述倒角部的各主面侧的倒角面与抛光垫接触; 然后进行双面抛光; 作为第二倒角部分抛光步骤,至少抛光晶片的倒角部分,使得倒角部分的端面与抛光垫接触,并且晶片的两个主表面都不与 抛光垫 因此,当制造半导体晶片时,可以消除在双面抛光工艺中的倒角部分产生的刮痕和产生,并且可以防止在主表面的周边部分中的抛光过度抛光倒角部分 。 因此,提供了即使在倒角部附近也具有高平坦度的半导体晶片的制造方法和半导体晶片。
    • 8. 发明授权
    • Semiconductor wafer thinning method, and thin semiconductor wafer
    • 半导体晶片薄化方法和薄半导体晶圆
    • US06930023B2
    • 2005-08-16
    • US10276537
    • 2001-05-11
    • Mamoru OkadaYukio Nakajima
    • Mamoru OkadaYukio Nakajima
    • B24B7/22B24B37/30H01L21/304H01L21/687H01L21/46
    • H01L21/304B24B7/228B24B41/068B24B49/00H01L21/6835H01L2221/68318H01L2221/68327H01L2221/6834H01L2221/68381Y10S438/928Y10S438/959Y10S438/977
    • In a method for thinning a semiconductor wafer by grinding a back surface of the semiconductor wafer in which semiconductor devices 2 are formed on its surface, the surface of the semiconductor wafer 1 is adhered to a support 4 via an adhesive layer 3, the back surface of the semiconductor wafer is ground while holding the support, and then the thinned semiconductor wafer is released from the support. Preferably, a semiconductor wafer is used as the support, a thermal release double-sided adhesive sheet is used as the adhesive layer, and they are separated by heating after grinding. Thus, there are provided a method for thinning a semiconductor wafer, which enables production of semiconductor wafers having a thickness of about 120 μm or less without generating breakage such as cracking or chipping during the processing step and so forth as much as possible at a low cost, and a semiconductor wafer thinned further compared with conventional products in spite of a large diameter of 6 inches (150 mm) or more.
    • 在通过研磨在其表面上形成有半导体器件2的半导体晶片的背表面来减薄半导体晶片的方法中,半导体晶片1的表面经由粘合剂层3粘附到支撑体4,后表面 在保持支撑体的同时研磨半导体晶片,然后将薄化的半导体晶片从支撑体释放。 优选地,使用半导体晶片作为支撑体,使用热释放双面粘合片作为粘合剂层,并且在研磨之后通过加热分离。 因此,提供了一种用于减薄半导体晶片的方法,其能够生产厚度为约120μm或更小的半导体晶片,而不会在处理步骤等中尽可能低地产生破裂或破碎等破损 成本以及与常规产品相比进一步减薄的半导体晶片,尽管具有6英寸(150mm)以上的大直径。