专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4705912A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US4705912A
公开(公告)日：1987-11-10
申请号：US909255
申请日：1986-09-19
申请人： Yukio Nakashima , Hisao Haku , Kaneo Watanabe , Tsugufumi Matsuoka
发明人： Yukio Nakashima , Hisao Haku , Kaneo Watanabe , Tsugufumi Matsuoka
IPC分类号： H01L31/04 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521 , Y10S148/16
摘要： A photovoltaic device has a semiconductive multilayer of one conductivity type, which includes a plurality of amorphous thin constituent layers of different kinds stacked periodically to form at least one quantum well. A semiconductor layer of an i-type, which is contiguous to the multilayer so that light may be applied to the i-type layer through the multilayer.
摘要翻译：光电器件具有一种导电类型的半导体多层，其包括周期性地堆叠以形成至少一个量子阱的多个不同种类的非晶薄构成层。 i型半导体层，其与多层相邻，使得光可以通过多层施加到i型层。

2. 发明授权

US4719123A Method for fabricating periodically multilayered film 失效
标题翻译：定期制造多层膜的方法
公开(公告)号：US4719123A
公开(公告)日：1988-01-12
申请号：US891758
申请日：1986-07-31
申请人： Hisao Haku , Yukio Nakashima , Kaneo Watanabe , Tsugufumi Matsuoka
发明人： Hisao Haku , Yukio Nakashima , Kaneo Watanabe , Tsugufumi Matsuoka
IPC分类号： H01L21/205 , H01L31/0352 , B05D3/06
CPC分类号： B82Y20/00 , H01L21/02422 , H01L21/02425 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/035245 , Y10S438/931
摘要： A method for fabricating a periodically multilayered film having a plurality of amorphous thin layers of different kinds stacked periodically is performed by forming at least one kind of the layers in the stack by a photo CVD method, whereby a more definite periodicity in the composition of the lattice and fewer defects are achieved.
摘要翻译：通过利用光CVD法在堆叠中形成至少一种层来制造具有周期性地堆叠的多个不同种类的非晶薄层的周期性多层膜的方法，由此，实现了晶格和更少的缺陷。

3. 发明授权

US4843451A Photovoltaic device with O and N doping 失效
标题翻译：具有O和N掺杂的光伏器件
公开(公告)号：US4843451A
公开(公告)日：1989-06-27
申请号：US228796
申请日：1988-07-29
申请人： Kaneo Watanabe , Tsugufumi Matsuoka , Yukio Nakashima , Hisao Haku
发明人： Kaneo Watanabe , Tsugufumi Matsuoka , Yukio Nakashima , Hisao Haku
IPC分类号： H01L31/04 , H01L31/0288 , H01L31/075 , H01L31/20
CPC分类号： H01L31/202 , H01L31/0288 , H01L31/075 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device has at least one set of amorphous semiconductor layers forming a p-i-n junction structure, wherein at least one of the semiconductor layers having a given thickness, is doped with nitrogen and oxygen to a depth forming at least part of said given thickness. Such a photovoltaic device is fabricated by depositing on a substrate at least one set of amorphous semiconductor layers which form a p-i-n junction structure, and by doping at least one of the layers with nitrogen and oxygen to a depth forming at least part of the thickness of the doped layer.
摘要翻译：光伏器件具有形成p-i-n结结构的至少一组非晶半导体层，其中具有给定厚度的至少一个半导体层掺杂有氮和氧至形成所述给定厚度的至少一部分的深度。这样的光伏器件通过在衬底上沉积至少一组形成pin结结构的非晶半导体层，并且通过用氮和氧掺杂至少一个层至深度形成至少一部分厚度的掺杂层。

4. 发明授权

US4755483A Method for producing semiconductor device with p-type amorphous silicon carbide semiconductor film formed by photo-chemical vapor deposition 失效
标题翻译：用于通过光化学气相沉积形成的具有p型非晶碳化硅半导体膜的半导体器件的制造方法
公开(公告)号：US4755483A
公开(公告)日：1988-07-05
申请号：US888474
申请日：1986-07-21
申请人： Hisao Haku , Yukio Nakashima , Tsugufumi Matsuoka , Kaneo Watanabe
发明人： Hisao Haku , Yukio Nakashima , Tsugufumi Matsuoka , Kaneo Watanabe
IPC分类号： H01L21/04 , H01L21/205
CPC分类号： H01L21/0445 , Y10S438/931
摘要： A method for producing a semiconductor device uses trimethyl boron (B(CH.sub.3).sub.3) of triethyl boron (B(C.sub.2 H.sub.5).sub.3) or a mixture thereof as a p-type dopant and/or a band gap widening source material gas in a process for forming a p-type amorphous semiconductor film. Accordingly, the quantity and the number of different gases which are used can be reduced and also the photoconductivity and dark conductivity can be improved, whereby a semiconductor device suitable for photovoltaic cells, photo sensors and the like using a p-type amorphous semiconductor film having a wide optical band gap can be produced.
摘要翻译：半导体器件的制造方法使用三乙基硼（B（C 2 H 5）3）的三甲基硼（B（CH 3）3））或其混合物作为p型掺杂剂和/或带隙加宽源材料气体用于形成p型非晶半导体膜。因此，可以减少使用的不同气体的量和数量，并且还可以提高光电导率和暗电导率，由此适用于使用具有p型非晶半导体膜的光伏电池，光电传感器等的半导体器件，其具有可以产生宽的光学带隙。

5. 发明授权

US4776894A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US4776894A
公开(公告)日：1988-10-11
申请号：US84947
申请日：1987-08-13
申请人： Kaneo Watanabe , Yukio Nakashima
发明人： Kaneo Watanabe , Yukio Nakashima
IPC分类号： H01L31/076 , H01L31/20 , H01L31/06
CPC分类号： H01L31/076 , H01L31/20 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A first photovoltaic device according to the present invention comprises a plurality of unit photovoltaic cells layered in optical series, each unit photovoltaic cell including an optically active layer made of amorphous silicon and two impurity doped layers of opposite conductivity types arranged at opposite sides of the optically active layer; wherein a first impurity doped layer of a first unit photovoltaic cell located at the contact interface with a second unit photovoltaic cell is made of a first amorphous silicon alloy of first conductivity type, having an optically forbidden band width wider than that of amorphous silicon, and a second impurity doped layer of said second photovoltaic cell located at said contact interface is made of a second amorphous silicon alloy, different from said first amorphous silicon alloy, of opposite conductivity type from said first conductivity type, having an optically forbidden band width wider than that of the amorphous silicon.A second photovoltaic device according to the present invention further comprises an additional impurity doper layer of either of the two conductivity types and made of non-monocrystalline ailicon, interposed between said first and second impurity layers.
摘要翻译：根据本发明的第一光伏器件包括以光学系列分层的多个单元光伏电池，每个单位光伏电池包括由非晶硅制成的光学有源层和布置在光学相对侧的相反导电类型的两个杂质掺杂层活性层其中位于与第二单位光伏电池的接触界面处的第一单位光伏电池的第一杂质掺杂层由第一导电类型的第一非晶硅合金制成，具有宽于无定形硅的光学禁止带宽，以及位于所述接触界面处的所述第二光伏电池的第二杂质掺杂层由不同于所述第一非晶硅合金的与所述第一导电类型相反的导电类型的第二非晶硅合金制成，具有宽于非晶硅的。根据本发明的第二光伏器件还包括介于所述第一和第二杂质层之间的两种导电类型中的任一种并由非单晶硅制成的附加杂质层。

6. 发明授权

US4781765A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US4781765A
公开(公告)日：1988-11-01
申请号：US96944
申请日：1987-09-14
申请人： Kaneo Watanabe , Yukio Nakashima
发明人： Kaneo Watanabe , Yukio Nakashima
IPC分类号： H01L31/04 , H01L31/075 , H01L31/20 , H01L31/06
CPC分类号： H01L31/075 , H01L31/20 , Y02E10/548
摘要： A photovoltaic device comprises a transparent front electrode, an amorphous semiconductor film containing at least one p-i-n junction and a metallic back electrode, wherein the n-layer neighboring on the back electrode includes at least one first type sub-layer of an alloyed amorphous silicon which contains not only hydrogen and a dopant for n-conductivity type but also at least one element selected from nitrogen, oxygen and carbon, and at least one second type sub-layer of an amorphous silicon which contains hydrogen and a dopant for n conductivity type.
摘要翻译：光电器件包括透明前电极，含有至少一个pin结的非晶半导体膜和金属背电极，其中在背电极上相邻的n层包括合金非晶硅的至少一个第一类型子层，不仅含有氢和用于n型导电型的掺杂剂，而且还含有选自氮，氧和碳的至少一种元素，以及含有氢和n型导电型掺杂剂的非晶硅的至少一种第二类型子层。

7. 发明授权

US09863302B2 Cooling device for under-floor device for vehicle 有权
公开(公告)号：US09863302B2
公开(公告)日：2018-01-09
申请号：US14361519
申请日：2012-11-22
申请人： Hiroyuki Higashino , Yukio Nakashima , Shigetoshi Ipposhi
发明人： Hiroyuki Higashino , Yukio Nakashima , Shigetoshi Ipposhi
IPC分类号： B60H3/00 , F01P1/06 , B61C17/00 , H05K7/20
CPC分类号： F01P1/06 , B61C17/00 , H05K7/20918 , H05K7/20936
摘要： A cooling device includes a base plate to a rear surface side of which an under-floor device is attached. A heat radiating unit is attached to a front surface side of the base plate and radiating heat is conducted from the under-floor device via the base plate. A cover surrounding the heat radiating unit and including a side opening is capable of causing traveling wind to flow therein and thereout, in opposite side surfaces facing a traveling direction of a vehicle. A guide plate guides traveling wind flowing in from the side opening to the heat radiating unit by blocking at least part of a gap area between a surface connecting the opposite side surfaces and the heat radiating unit, the guide plate being provided in a side gap area between a side surface of the cover and the heat radiating unit on a traveling-wind flow-in side.

8. 发明申请

US20130322141A1 POWER CONVERSION APPARATUS 有权
标题翻译：功率转换装置
公开(公告)号：US20130322141A1
公开(公告)日：2013-12-05
申请号：US13984216
申请日：2011-02-10
申请人： Tomohiro Kobayashi , Kohei Sakamoto , Takeshi Yamamoto , Yasuaki Mamoto , Yukio Nakashima
发明人： Tomohiro Kobayashi , Kohei Sakamoto , Takeshi Yamamoto , Yasuaki Mamoto , Yukio Nakashima
IPC分类号： H02M7/537
CPC分类号： H02M7/537 , H02G5/005 , H02G5/10 , H02M7/003 , H02M7/5387 , H05K7/209 , H05K7/20918
摘要： A filter capacitor accumulating direct-current power and a semiconductor device module performing a switching operation that converts the direct-current power accumulated in the filter capacitor to alternating-current power are electrically connected with each other through a laminated bus bar. The laminated bus bar has a first bus bar and a second bus bar in which a plurality of connection conductors are laminated through an insulator. The second bus bar is provided with heat radiating portions that are formed by exposing a part of the conductor in each flat plate surface.
摘要翻译：将积蓄直流电力的滤波电容器和执行将滤波电容器中累积的直流电力转换为交流电力的开关动作的半导体器件模块通过层叠母线彼此电连接。叠层母线具有第一母线和第二母线，其中多个连接导体通过绝缘体层叠。第二母线设置有通过在每个平板表面中暴露导体的一部分而形成的散热部分。

9. 发明授权

US09281760B2 Power module and three-level power converter using the same 有权
标题翻译：电源模块和三电平转换器使用相同
公开(公告)号：US09281760B2
公开(公告)日：2016-03-08
申请号：US14396640
申请日：2012-04-26
申请人： Tomohiro Kobayashi , Yukio Nakashima , Hideo Okayama
发明人： Tomohiro Kobayashi , Yukio Nakashima , Hideo Okayama
IPC分类号： H02M7/537 , H02M7/487
CPC分类号： H02M7/537 , H02M7/003 , H02M7/487
摘要： A first pair including a highest-outer-side switching element and a switching element that operates as a neutral clamp diode on a higher potential side, a second pair including a lowest-outer-side switching element and a switching element that operates as a neutral clamp diode on a lower potential side, and a third pair including a higher-inner-side switching element and a lower-inner-side switching element are respectively configured from power modules that are two-element-inclusive power modules, a power conversion circuit portion being configured from the first pair, the second pair, and the third pair.
摘要翻译：第一对包括最高外侧开关元件和在高电位侧作为中性钳位二极管工作的开关元件，第二对包括最低外侧开关元件和作为中性线工作的开关元件低电位侧的钳位二极管，以及包括高内侧开关元件和下侧内侧开关元件的第三对，分别由作为两元件的电力模块的电力模块构成，功率转换电路部分由第一对，第二对和第三对配置。

10. 发明授权

US09270199B2 Power conversion apparatus with a laminated bus bar comprising an exposed heat radiating portion 有权
标题翻译：具有层叠汇流条的电力转换装置，其包括暴露的散热部分
公开(公告)号：US09270199B2
公开(公告)日：2016-02-23
申请号：US13984216
申请日：2011-02-10
申请人： Tomohiro Kobayashi , Kohei Sakamoto , Takeshi Yamamoto , Yasuaki Mamoto , Yukio Nakashima
发明人： Tomohiro Kobayashi , Kohei Sakamoto , Takeshi Yamamoto , Yasuaki Mamoto , Yukio Nakashima
IPC分类号： H02G5/10 , H02M7/537 , H02G5/00 , H02M7/00 , H05K7/20 , H02M7/5387
CPC分类号： H02M7/537 , H02G5/005 , H02G5/10 , H02M7/003 , H02M7/5387 , H05K7/209 , H05K7/20918
摘要： A filter capacitor accumulating direct-current power and a semiconductor device module performing a switching operation that converts the direct-current power accumulated in the filter capacitor to alternating-current power are electrically connected with each other through a laminated bus bar. The laminated bus bar has a first bus bar and a second bus bar in which a plurality of connection conductors are laminated through an insulator. The second bus bar is provided with heat radiating portions that are formed by exposing a part of the conductor in each flat plate surface.
摘要翻译：将积蓄直流电力的滤波电容器和执行将滤波电容器中累积的直流电力转换为交流电力的开关动作的半导体器件模块通过层叠母线彼此电连接。叠层母线具有第一母线和第二母线，其中多个连接导体通过绝缘体层叠。第二母线设置有通过在每个平板表面中暴露导体的一部分而形成的散热部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式