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1. 发明授权

US08310666B2 Apparatus of inspecting defect in semiconductor and method of the same 失效
标题翻译：检测半导体缺陷的装置及其方法
公开(公告)号：US08310666B2
公开(公告)日：2012-11-13
申请号：US13116466
申请日：2011-05-26
申请人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
发明人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
IPC分类号： G01N21/88 , G01B11/00
CPC分类号： G01N21/956
摘要： When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
摘要翻译：当通过现有技术的缺陷检查装置获得越来越小型化的图案的缺陷的尺寸时，不方便地给出不同于SEM的相同缺陷的测量值的值。因此，需要精确地计算由缺陷检查装置检测到的缺陷的尺寸值，以近似于通过SEM测量的值。为此，由缺陷检查装置检测到的缺陷的尺寸根据缺陷的特征量或类型进行修正，从而可以精确地计算缺陷尺寸。

2. 发明授权

US08144337B2 Inspecting method and inspecting apparatus for substrate surface 有权
标题翻译：基板表面检查方法及检查装置
公开(公告)号：US08144337B2
公开(公告)日：2012-03-27
申请号：US12470505
申请日：2009-05-22
申请人： Akira Hamamatsu , Yoshimasa Oshima , Shunji Maeda , Hisae Shibuya , Yuta Urano , Toshiyuki Nakao , Shigenobu Maruyama
发明人： Akira Hamamatsu , Yoshimasa Oshima , Shunji Maeda , Hisae Shibuya , Yuta Urano , Toshiyuki Nakao , Shigenobu Maruyama
IPC分类号： G01B11/30
CPC分类号： G01B11/303 , G01N21/47 , G01N21/94 , G01N21/9501
摘要： To inspect a substrate such as a semiconductor substrate for surface roughness at high precision.The surface roughness of the substrate is measured in each frequency band of the surface roughness by applying a light to the substrate surface and detecting a scattered light or reflected light at a plurality of azimuth or elevation angles.
摘要翻译：以高精度检查用于表面粗糙度的半导体基板等基板。通过向基板表面施加光并以多个方位角或仰角检测散射光或反射光，测量表面粗糙度的每个频带中的基板的表面粗糙度。

3. 发明授权

US07952699B2 Apparatus of inspecting defect in semiconductor and method of the same 有权
标题翻译：检测半导体缺陷的装置及其方法
公开(公告)号：US07952699B2
公开(公告)日：2011-05-31
申请号：US12827555
申请日：2010-06-30
申请人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
发明人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
IPC分类号： G01N21/88 , G01B11/00
CPC分类号： G01N21/956
摘要： When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
摘要翻译：当通过现有技术的缺陷检查装置获得越来越小型化的图案的缺陷的尺寸时，不方便地给出不同于SEM的相同缺陷的测量值的值。因此，需要精确地计算由缺陷检查装置检测到的缺陷的尺寸值，以近似于通过SEM测量的值。为此，由缺陷检查装置检测到的缺陷的尺寸根据缺陷的特征量或类型进行修正，从而可以精确地计算缺陷尺寸。

4. 发明授权

US08643834B2 Apparatus of inspecting defect in semiconductor and method of the same 失效
标题翻译：检测半导体缺陷的装置及其方法
公开(公告)号：US08643834B2
公开(公告)日：2014-02-04
申请号：US13648001
申请日：2012-10-09
申请人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
发明人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
IPC分类号： G01N21/88 , G01B11/00
CPC分类号： G01N21/956
摘要： When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
摘要翻译：当通过现有技术的缺陷检查装置获得越来越小型化的图案的缺陷的尺寸时，不方便地给出不同于SEM的相同缺陷的测量值的值。因此，需要精确地计算由缺陷检查装置检测到的缺陷的尺寸值，以近似于通过SEM测量的值。为此，由缺陷检查装置检测到的缺陷的尺寸根据缺陷的特征量或类型进行修正，从而可以精确地计算缺陷尺寸。

5. 发明授权

US08437534B2 Defect classification method and apparatus, and defect inspection apparatus 有权
标题翻译：缺陷分类方法和装置，以及缺陷检查装置
公开(公告)号：US08437534B2
公开(公告)日：2013-05-07
申请号：US11779905
申请日：2007-07-19
申请人： Hisae Shibuya , Shunji Maeda , Akira Hamamatsu
发明人： Hisae Shibuya , Shunji Maeda , Akira Hamamatsu
IPC分类号： G06K9/00 , G06K9/68 , G05B13/02 , G06F7/00 , G06F17/00
CPC分类号： G06T7/0004 , G01N21/9501 , G01N21/956 , G06K9/03 , G06K9/6254 , G06K9/6282 , G06T2207/30148
摘要： A defect classification method to classify defects by using a classifier having a binary tree structure based on features of defects extracted from detected signals acquired from a defect inspection apparatus includes a classifier construction process for constructing the classifier by setting a branch condition including defect classes respectively belonging to groups located on both sides of the branch point, a feature to be used for branching, and a discriminant reference, for each branch point in the structure based on instruction of defect classes and feature data respectively associated therewith beforehand. The process includes a priority order specification process for previously specifying target classification performance of purity and accuracy for each defect class, whole and in worst case, with priority order, and an evaluation process for evaluating whether the specified target classification performance under the branching condition is satisfied and displaying a result of evaluation, every item.
摘要翻译：通过使用基于从缺陷检查装置获取的检测信号提取的缺陷的特征的具有二叉树结构的分类器对缺陷进行分类的缺陷分类方法包括：分类器构造处理，用于通过设置包括分别属于的缺陷类的分支条件来构建分类器基于分支点两侧的组，用于分支的特征，以及基于与预先分别相关联的缺陷类别和特征数据的指示的结构中的每个分支点的判别参考。该处理包括优先顺序指定处理，用于以优先级顺序预先指定每个缺陷类的全部和最坏情况下的纯度和精度的目标分类性能，以及用于评估分支条件下的指定目标分类性能是否为满意并显示评估结果，每个项目。

6. 发明申请

US20120162665A1 Inspecting Method and Inspecting Apparatus for Substrate Surface 有权
标题翻译：基板表面检查方法及检查装置
公开(公告)号：US20120162665A1
公开(公告)日：2012-06-28
申请号：US13404749
申请日：2012-02-24
申请人： Akira Hamamatsu , Yoshimasa Oshima , Shunji Maeda , Hisae Shibuya , Yuta Urano , Toshiyuki Nakao , Shigenobu Maruyama
发明人： Akira Hamamatsu , Yoshimasa Oshima , Shunji Maeda , Hisae Shibuya , Yuta Urano , Toshiyuki Nakao , Shigenobu Maruyama
IPC分类号： G01B11/30
CPC分类号： G01B11/303 , G01N21/47 , G01N21/94 , G01N21/9501
摘要： An inspecting method and apparatus for inspecting a substrate surface includes application of a light to the substrate surface, detection of scattered light or reflected light from the substrate surface due to the applied light at a plurality of positions to obtain a plurality of electrical signals, extraction of a signal in a mutually different frequency band from each of the plurality of electrical signals, and calculation of a value regarding a state of film of the substrate through an arithmetical operation process of a plurality of extracted signals in the frequency bands.
摘要翻译：用于检查基板表面的检查方法和装置包括：由于在多个位置处施加的光，向基板表面施加光，检测散射光或来自基板表面的反射光，以获得多个电信号，提取在与所述多个电信号中的每一个相互不同的频带中的信号的信号，以及通过所述频带中的多个提取的信号的算术运算处理来计算关于所述衬底的膜的状态的值。

7. 发明授权

US07940385B2 Defect inspection apparatus and its method 有权
标题翻译：缺陷检查装置及其方法
公开(公告)号：US07940385B2
公开(公告)日：2011-05-10
申请号：US12153853
申请日：2008-05-27
申请人： Akira Hamamatsu , Hisae Shibuya , Shunji Maeda
发明人： Akira Hamamatsu , Hisae Shibuya , Shunji Maeda
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N2021/8822
摘要： In a defect inspection apparatus for performing an inspection with an optical system, the dimension of a defect is measured substantially concurrently with detection of the defect. In order to promote the accuracy of measurement of the defect dimension, a correction unit is provided which corrects the defect dimension by using a standard sample such as a standard particle.
摘要翻译：在用光学系统进行检查的缺陷检查装置中，在检测到缺陷的同时测量缺陷的尺寸。为了提高缺陷尺寸的测量精度，提供了通过使用诸如标准颗粒的标准样品来校正缺陷尺寸的校正单元。

8. 发明授权

US08654350B2 Inspecting method and inspecting apparatus for substrate surface 有权
标题翻译：基板表面检查方法及检查装置
公开(公告)号：US08654350B2
公开(公告)日：2014-02-18
申请号：US13672742
申请日：2012-11-09
申请人： Akira Hamamatsu , Yoshimasa Oshima , Shunji Maeda , Hisae Shibuya , Yuta Urano , Toshiyuki Nakao , Shigenobu Maruyama
发明人： Akira Hamamatsu , Yoshimasa Oshima , Shunji Maeda , Hisae Shibuya , Yuta Urano , Toshiyuki Nakao , Shigenobu Maruyama
IPC分类号： G01B11/30
CPC分类号： G01B11/303 , G01N21/47 , G01N21/94 , G01N21/9501
摘要： An inspecting method and apparatus for inspecting a substrate surface includes illuminating a light to the substrate surface having a film, detection of a scattered light or reflected light from a plurality of positions of the substrate surface to obtain a plurality of electrical signals, comparison of the plurality of electrical signals and a database which indicates a relationship between the electrical signals and surface roughness, and calculation of a surface roughness value based on the result of comparison.
摘要翻译：用于检查基板表面的检查方法和装置包括将光照射到具有膜的基板表面，从基板表面的多个位置检测散射光或反射光以获得多个电信号，多个电信号和指示电信号和表面粗糙度之间的关系的数据库，以及基于比较结果的表面粗糙度值的计算。

9. 发明申请

US20110228262A1 APPARATUS OF INSPECTING DEFECT IN SEMICONDUCTOR AND METHOD OF THE SAME 失效
标题翻译：检查半导体缺陷的设备及其方法
公开(公告)号：US20110228262A1
公开(公告)日：2011-09-22
申请号：US13116466
申请日：2011-05-26
申请人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
发明人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
IPC分类号： G01N21/00
CPC分类号： G01N21/956
摘要： When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
摘要翻译：当通过现有技术的缺陷检查装置获得越来越小型化的图案的缺陷的尺寸时，不方便地给出不同于SEM的相同缺陷的测量值的值。因此，需要精确地计算由缺陷检查装置检测到的缺陷的尺寸值，以近似于通过SEM测量的值。为此，由缺陷检查装置检测到的缺陷的尺寸根据缺陷的特征量或类型进行修正，从而可以精确地计算缺陷尺寸。

10. 发明授权

US07474394B2 Apparatus of inspecting defect in semiconductor and method of the same 有权
标题翻译：检测半导体缺陷的装置及其方法
公开(公告)号：US07474394B2
公开(公告)日：2009-01-06
申请号：US11488622
申请日：2006-07-19
申请人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
发明人： Akira Hamamatsu , Shunji Maeda , Hisae Shibuya
IPC分类号： G01N21/88
CPC分类号： G01N21/956
摘要： When size of a defect on an increasingly miniaturized pattern is obtained by defect inspection apparatus in the related art, a value is inconveniently given, which is different from a measured value of the same defect by SEM. Thus, a dimension value of a defect detected by defect inspection apparatus needs to be accurately calculated to be approximated to a value measured by SEM. To this end, size of the defect detected by the defect inspection apparatus is corrected depending on feature quantity or type of the defect, thereby defect size can be accurately calculated.
摘要翻译：当通过现有技术的缺陷检查装置获得越来越小型化的图案的缺陷的尺寸时，不方便地给出不同于SEM的相同缺陷的测量值的值。因此，需要精确地计算由缺陷检查装置检测到的缺陷的尺寸值，以近似于通过SEM测量的值。为此，由缺陷检查装置检测到的缺陷的尺寸根据缺陷的特征量或类型进行修正，从而可以精确地计算缺陷尺寸。

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