专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120281469A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120281469A1
公开(公告)日：2012-11-08
申请号：US13459537
申请日：2012-04-30
申请人： Hiroyuki TOMATSU , Hidetomo KOBAYASHI , Yutaka SHIONOIRI
发明人： Hiroyuki TOMATSU , Hidetomo KOBAYASHI , Yutaka SHIONOIRI
IPC分类号： G11C11/40 , H01L27/108
CPC分类号： H01L27/1156 , G11C7/02 , G11C11/4085 , G11C11/4091 , G11C11/4094
摘要： Noise generated on a word line is reduced without increasing a load on the word line. A semiconductor device is provided in which a plurality of storage elements each including at least one switching element are provided in matrix; each of the plurality of storage elements is electrically connected to a word line and a bit line; the word line is connected to a gate (or a source and a drain) of a transistor in which minority carriers do not exist substantially; and capacitance of the transistor in which minority carriers do not exist substantially can be controlled by controlling a potential of a source and a drain (or a gate) the transistor in which minority carriers do not exist substantially. The transistor in which minority carriers do not exist substantially may include a wide band gap semiconductor.
摘要翻译：在字线上产生的噪声减小，而不增加字线上的负载。提供一种半导体器件，其中包括至少一个开关元件的多个存储元件设置为矩阵; 多个存储元件中的每一个电连接到字线和位线; 字线连接到其中少数载体基本不存在的晶体管的栅极（或源极和漏极）; 并且通过控制其中不存在少数载流子的晶体管的源极和漏极（或栅极）的电位，可以控制其中不存在少数载流子的晶体管的电容。少数载流子不存在的晶体管可以包括宽带隙半导体。

2. 发明申请

US20120289008A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120289008A1
公开(公告)日：2012-11-15
申请号：US13558368
申请日：2012-07-26
申请人： Masashi TSUBUKU , Shuhei YOSHITOMI , Takahiro TUJI , Miyuki HOSOBA , Junichiro SAKATA , Hiroyuki TOMATSU , Masahiko HAYAKAWA
发明人： Masashi TSUBUKU , Shuhei YOSHITOMI , Takahiro TUJI , Miyuki HOSOBA , Junichiro SAKATA , Hiroyuki TOMATSU , Masahiko HAYAKAWA
IPC分类号： H01L21/336
CPC分类号： H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02631 , H01L21/02667 , H01L27/1248 , H01L27/127 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
摘要翻译：本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中，重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以制造。

3. 发明申请

US20110059575A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110059575A1
公开(公告)日：2011-03-10
申请号：US12871122
申请日：2010-08-30
申请人： Masashi TSUBUKU , Shuhei YOSHITOMI , Takahiro TUJI , Miyuki HOSOBA , Junichiro SAKATA , Hiroyuki TOMATSU , Masahiko HAYAKAWA
发明人： Masashi TSUBUKU , Shuhei YOSHITOMI , Takahiro TUJI , Miyuki HOSOBA , Junichiro SAKATA , Hiroyuki TOMATSU , Masahiko HAYAKAWA
IPC分类号： H01L21/34
CPC分类号： H01L27/1262 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02631 , H01L21/02667 , H01L27/1248 , H01L27/127 , H01L29/66765 , H01L29/66969 , H01L29/7869
摘要： It is an object to provide a manufacturing method of a structure of a thin film transistor including an oxide semiconductor film, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible. A protective insulating layer is formed to cover a thin film transistor including an oxide semiconductor layer that is dehydrated or dehydrogenated by first heat treatment, and second heat treatment at a temperature that is lower than that of the first heat treatment, in which the increase and decrease in temperature are repeated plural times, is performed, whereby a thin film transistor including an oxide semiconductor layer, in which threshold voltage at which a channel is formed is positive and as close to 0 V as possible without depending on the channel length, can be manufactured.
摘要翻译：本发明的目的是提供一种包括氧化物半导体膜的薄膜晶体管的结构的制造方法，其中形成沟道的阈值电压为正且尽可能接近0V。形成保护绝缘层以覆盖包括通过第一热处理脱水或脱氢的氧化物半导体层的薄膜晶体管，以及在比第一热处理低的温度下进行第二热处理，其中，重复多次温度的降低，由此，在不影响通道长度的情况下，包含氧化物半导体层的薄膜晶体管，其中形成沟道的阈值电压为正且尽可能接近0V，可以制造。

4. 发明申请

US20120286260A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120286260A1
公开(公告)日：2012-11-15
申请号：US13461808
申请日：2012-05-02
申请人： Kosei NODA , Shunpei YAMAZAKI , Tatsuya HONDA , Yusuke SEKINE , Hiroyuki TOMATSU
发明人： Kosei NODA , Shunpei YAMAZAKI , Tatsuya HONDA , Yusuke SEKINE , Hiroyuki TOMATSU
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/0242 , H01L21/02554 , H01L21/02565 , H01L21/02595 , H01L21/02656 , H01L21/84 , H01L27/10873 , H01L27/1156 , H01L27/1203 , H01L27/1222 , H01L27/1225 , H01L27/1255 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78609
摘要： A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low.
摘要翻译：提供了包括氧化物半导体并且具有高场效应迁移率并且其中阈值电压的变化小的高度可靠的晶体管。通过使用晶体管，提供了难以实现的高性能半导体器件。晶体管包括含有选自铟，锡，锌和铝中的两种或更多种，优选三种或更多种元素的氧化物半导体膜。在加热基板的状态下形成氧化物半导体膜。此外，在晶体管的制造过程中，通过相邻的绝缘膜和/或通过离子注入向氧化物半导体膜提供氧，从而尽可能地减少产生载流子的氧气缺乏。此外，在晶体管的制造过程中，氧化物半导体膜被高度纯化，使得氢的浓度极低。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式