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    • 1. 发明申请
    • Positive Electrode for Alkaline Storage Battery and Alkaline Storage Battery
    • 碱性电池和碱性蓄电池正极
    • US20080318125A1
    • 2008-12-25
    • US11658661
    • 2005-07-21
    • Hiroyuki SakamotoTakao YamamotoKazuhiro Ohkawa
    • Hiroyuki SakamotoTakao YamamotoKazuhiro Ohkawa
    • H01M4/32H01M4/42H01M4/46H01M4/80H01M4/52H01M4/62
    • H01M4/667H01M4/32H01M4/52
    • There are provided a low-cost positive electrode for an alkaline storage battery which retains an excellent current collectivity over a long period of time and a low-cost alkaline storage battery which retains an excellent charge/discharge efficiency over a long period of time. A positive electrode for an alkaline storage battery according to the present invention has a positive electrode substrate including a resin skeleton made of a resin and having a three-dimensional network structure and a nickel coating layer made of nickel and coating the resin skeleton and also having a void portion in which a plurality of pores are coupled in three dimensions and a positive electrode active material containing nickel hydroxide particles and filled in the void portion of the positive electrode substrate. Among them, the nickel coating layer has an average thickness of not less than 0.5 μm and not more than 5 μm. The proportion of the nickel coating layer to the positive electrode substrate is not less than 30 wt % and not more than 80 wt %. The filling amount of the positive electrode active material is not less than 3 times and not more than 10 times the weight of the positive electrode substrate.
    • 本发明提供了一种用于碱性蓄电池的低成本正电极,其长期保持优异的集流性,并且在长时间内保持了优异的充放电效率的低成本碱性蓄电池。 本发明的碱性蓄电池用正极具有包含由树脂构成的树脂骨架的正极基板,具有三维网状结构,由镍构成的镍覆盖层涂覆树脂骨架,并且还具有 其中多个孔三维结合的空隙部分和含有氢氧化镍颗粒的正极活性材料并填充在正极基板的空隙部分中。 其中,镍镀层的平均厚度为0.5μm以上5μm以下。 镍镀层与正极基板的比例为30重量%以上且80重量%以下。 正极活性物质的填充量不小于正极基板的重量的3倍以上10倍以下。
    • 7. 发明申请
    • III/V GROUP NITRIDE SEMICONDUCTOR, PHOTOCATALYTIC SEMICONDUCTOR DEVICE, PHOTOCATALYTIC OXIDATION-REDUCTION REACTION APPARATUS AND EXECUTION PROCESS OF PHOTOELECTROCHEMICAL REACTION
    • III / V族氮化物半导体,光电子半导体器件,光催化氧化还原反应装置和光电化学反应的执行过程
    • US20090045072A1
    • 2009-02-19
    • US12066069
    • 2006-09-06
    • Katsushi FujiiKazuhiro OhkawaMasato OnoTakashi Ito
    • Katsushi FujiiKazuhiro OhkawaMasato OnoTakashi Ito
    • C25B1/00C01B21/00C25B9/00
    • C30B29/403B01J35/004C30B29/406H01L21/0254H01L21/02576H01L21/0262
    • Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction.In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5×1016 cm−3 or more, but 3.0×1018 cm−3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate. In the photocatalytic oxidation-reduction reaction apparatus, one electrode of a pair of electrodes for electrolysis, which are electrically connected to each other in a state brought into contact with an electrolyte, is composed of the III/V group nitride semiconductor, and a catalytic reaction surface making up the III/V group nitride semiconductor is irradiated with light, thereby causing an oxidation reaction or reduction reaction on the catalytic reaction surface.
    • 提供一种III / V族氮化物半导体,通过光照射,光催化半导体器件,光催化氧化还原反应设备和光电化学反应的执行过程,在光转换效率高的光转换效率下进行氧化还原反应。 在III / V族氮化物半导体中,催化反应面的X射线摇摆曲线的半峰全宽为400arcsec以下,具有催化反应面的表层部的载流子密度为1.5 x1016cm -3以上,3.0×10 18 cm -3以下。 光催化半导体器件具有层叠在基板上的III / V族氮化物半导体。 在光催化氧化还原反应装置中,在与电解质接触的状态下电连接的一对电极的一个电极由III / V族氮化物半导体和催化剂 对构成III / V族氮化物半导体的反应面进行光照射,从而在催化反应面上发生氧化反应或还原反应。
    • 10. 发明授权
    • Method of controlling charge and discharge of secondary battery for automatic guided vehicle
    • 控制自动引导车辆二次电池充放电的方法
    • US07193394B2
    • 2007-03-20
    • US10856535
    • 2004-05-28
    • Toshifumi UedaKazuhiro OhkawaNobuyasu MorishitaNoriyuki Fujioka
    • Toshifumi UedaKazuhiro OhkawaNobuyasu MorishitaNoriyuki Fujioka
    • H01M10/44
    • B60L11/185B60L11/1809H02J7/0073Y02T10/7005Y02T10/7072Y02T90/121Y02T90/128Y02T90/14
    • To provide a method of controlling charge and discharge of a secondary battery for automatic guided vehicle that can decide the timing of refresh charge and discharge accurately and minimize the frequency of refresh charge and discharge. The method of controlling charge and discharge of a secondary battery for automatic guided vehicle comprises a first discharge step of making the secondary battery drive an automatic guided vehicle and discharge electricity with a predetermined amount; a voltage measurement step of measuring a discharge end voltage of the secondary battery at the completion of the first discharge step; and a charge step of performing a first charge step of charging the secondary battery incompletely at a first charging current value when the discharge end voltage is higher than a preset minimum voltage, and performing a second charge step of discharging the secondary battery fully and then charging the secondary battery fully at a second charging current value smaller than the first charging current value when the discharge end voltage equals the preset minimum voltage or less.
    • 提供一种控制自动引导车辆的二次电池的充放电的方法,其可以精确地决定刷新充电和放电的定时,并使刷新充电和放电的频率最小化。 用于控制自动引导车辆的二次电池的充放电的方法包括:使二次电池驱动自动引导车并以预定量放电的第一排放步骤; 电压测量步骤,在第一放电步骤完成时测量二次电池的放电终止电压; 以及充电步骤,当放电结束电压高于预设的最小电压时,执行以第一充电电流值不充分地对二次电池充电的第一充电步骤,并且执行第二充电步骤,将二次电池充满电并然后充电 当放电结束电压等于预设的最小电压或更小时,二次电池完全处于比第一充电电流值小的第二充电电流值。