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1. 发明授权

US09598768B2 Method of forming zinc oxide film (ZnO) or magnesium zinc oxide film (ZnMgO) and apparatus for forming zinc oxide film or magnesium zinc oxide film 有权
公开(公告)号：US09598768B2
公开(公告)日：2017-03-21
申请号：US13059356
申请日：2008-09-24
申请人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Masahisa Kogura
发明人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Masahisa Kogura
IPC分类号： C23C16/448 , C23C16/40 , C23C16/48 , C23C18/12 , H01L21/02 , C23C16/452 , C23C16/455
CPC分类号： C23C16/4486 , C23C16/407 , C23C16/452 , C23C16/45523 , C23C16/482 , C23C18/12 , C23C18/1216 , C23C18/1279 , C23C18/1291 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02628
摘要： A method of forming a zinc oxide film or a magnesium zinc oxide film which has a high transmittance. The method of forming a zinc oxide film or a magnesium zinc oxide film includes (A) converting a solution containing zinc, or zinc and magnesium into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.

2. 发明授权

US09574271B2 Method for forming metal oxide film, metal oxide film and apparatus for forming metal oxide film 有权
标题翻译：用于形成金属氧化物膜的方法，金属氧化物膜和用于形成金属氧化物膜的装置
公开(公告)号：US09574271B2
公开(公告)日：2017-02-21
申请号：US13383766
申请日：2009-09-02
申请人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida , Shizuo Fujita , Naoki Kameyama , Toshiyuki Kawaharamura
发明人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida , Shizuo Fujita , Naoki Kameyama , Toshiyuki Kawaharamura
IPC分类号： C23C16/00 , C23C18/12 , H01L31/18 , H01G9/20 , H01L29/786
CPC分类号： C23C18/1216 , C23C18/1258 , C23C18/1291 , H01G9/2031 , H01L29/7869 , H01L31/1884 , Y02E10/50
摘要： The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate.
摘要翻译：本发明的形成金属氧化物膜的方法可以提高生产效率，同时保持金属氧化物膜的低电阻。本发明的形成金属氧化物膜的方法包括首先将含有金属元素和乙二胺的溶液雾化; 同时加热基材; 然后将雾化溶液供给到基板的第一主表面上。

3. 发明授权

US09279182B2 Apparatus for forming metal oxide film, method for forming metal oxide film, and metal oxide film 有权
标题翻译：用于形成金属氧化物膜的设备，用于形成金属氧化物膜的方法和金属氧化物膜
公开(公告)号：US09279182B2
公开(公告)日：2016-03-08
申请号：US13643380
申请日：2010-06-01
申请人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Shizuo Fujita , Toshiyuki Kawaharamura
发明人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Shizuo Fujita , Toshiyuki Kawaharamura
IPC分类号： C23C16/06 , C23C16/40
CPC分类号： C23C16/407 , C23C18/1216 , C23C18/1279 , C23C18/1287 , C23C18/1291
摘要： A film forming apparatus includes a first solution container, a second solution container, a reaction chamber, a first path, and a second path. The first solution container stores a source solution containing metal. The second solution container stores hydrogen peroxide. A substrate is in the reaction chamber, and the reaction chamber includes a heating unit that heats the substrate. The first path supplies a source solution from the first solution container to the reaction chamber. The second path supplies hydrogen peroxide from the second solution container to the reaction chamber.
摘要翻译：成膜装置包括第一溶液容器，第二溶液容器，反应室，第一路径和第二路径。第一溶液容器存储含有金属的源溶液。第二溶液容器存储过氧化氢。基板位于反应室中，反应室包括加热基板的加热单元。第一条路径将源解决方案从第一溶液容器提供到反应室。第二路径将二氧化碳从第二溶液容器提供到反应室。

4. 发明申请

US20130247820A1 FILM FORMATION DEVICE 审中-公开
标题翻译：胶片形成装置
公开(公告)号：US20130247820A1
公开(公告)日：2013-09-26
申请号：US13990641
申请日：2011-03-15
申请人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida
发明人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida
IPC分类号： H01L31/18
CPC分类号： H01L31/1876 , B05B1/04 , B05B7/0012 , B05B7/0416 , B05B7/0458 , C23C16/4486 , C23C16/45514 , C23C16/45595
摘要： An object of the present invention is to provide a film formation device that is able to prevent a size increase in a configuration around a mist jet nozzle while maintaining uniform spouting of a mist to a substrate on which a film is to be formed. The present invention includes a mist generator (2) that generates a mist of a raw material of a film to be formed, and a mist jet nozzle (1) that jets the mist generated by the mist generator to a substrate on which a film is to be formed. The mist jet nozzle includes: a main body (1A) having a hollow portion (1H); a mist supply port (5a) that supplies the mist; a spout (8) that jets the mist to the outside; a carrier gas supply port (6a) that supplies a carrier gas; and a shower plate (7) having a plurality of holes (7a) formed therein. By the arrangement of the shower plate, the hollow portion is divided into a first space (1S) connected to the carrier gas supply port and a second space (1T) connected to the spout. The mist supply port is connected to the second space.
摘要翻译：本发明的目的是提供一种成膜装置，其能够防止喷雾喷嘴周围的构造的尺寸增大，同时保持喷雾到将要形成膜的基板上的均匀喷射。本发明包括产生要形成的膜的原料雾的雾发生器（2）和将由雾发生器产生的雾喷射到其上的膜的喷雾喷嘴（1）要形成雾喷嘴包括：具有中空部分（1H）的主体（1A）; 供给雾的雾供给口（5a）喷雾器（8）将雾气喷射到外面; 供给载气的载气供给口（6a）和具有形成在其中的多个孔（7a）的喷淋板（7）。通过喷淋板的布置，中空部被分成连接到载气供给口的第一空间（1S）和连接到喷口的第二空间（1T）。雾供应端口连接到第二个空间。

5. 发明授权

US10121931B2 Film formation device 有权
公开(公告)号：US10121931B2
公开(公告)日：2018-11-06
申请号：US13990641
申请日：2011-03-15
申请人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida
发明人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida
IPC分类号： B05B7/04 , C23C16/448 , C23C16/455 , H01L31/18 , B05B1/04 , B05B7/00
摘要： The present invention includes a mist generator that generates a mist of a raw material of a film to be formed, and a mist jet nozzle that jets the mist generated by the mist generator to a substrate on which a film is to be formed. The mist jet nozzle includes: a main body having a hollow portion; a mist supply port that supplies the mist; a spout that jets the mist to the outside; a carrier gas supply port that supplies a carrier gas; and a shower plate having a plurality of holes formed therein. By the arrangement of the shower plate, the hollow portion is divided into a first space connected to the carrier gas supply port and a second space connected to the spout. The mist supply port is connected to the second space.

6. 发明申请

US20120112187A1 METHOD FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM AND APPARATUS FOR FORMING METAL OXIDE FILM 有权
标题翻译：形成金属氧化物膜，金属氧化物膜和形成金属氧化物膜的方法
公开(公告)号：US20120112187A1
公开(公告)日：2012-05-10
申请号：US13383766
申请日：2009-09-02
申请人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida , Shizuo Fujita , Naoki Kameyama , Toshiyuki Kawaharamura
发明人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida , Shizuo Fujita , Naoki Kameyama , Toshiyuki Kawaharamura
IPC分类号： H01L29/24 , B05C5/00 , H01L21/36
CPC分类号： C23C18/1216 , C23C18/1258 , C23C18/1291 , H01G9/2031 , H01L29/7869 , H01L31/1884 , Y02E10/50
摘要： The present method of forming a metal oxide film can increase production efficiency while maintaining the low resistance of the metal oxide film. The present method of forming a metal oxide film includes first misting a solution containing a metallic element and ethylenediamine; meanwhile, heating a substrate; and then, supplying the misted solution onto a first main surface of the substrate.
摘要翻译：本发明的形成金属氧化物膜的方法可以提高生产效率，同时保持金属氧化物膜的低电阻。本发明的形成金属氧化物膜的方法包括首先将含有金属元素和乙二胺的溶液雾化; 同时加热基材; 然后将雾化溶液供给到基板的第一主表面上。

7. 发明申请

US20130039843A1 APPARATUS FOR FORMING METAL OXIDE FILM, METHOD FOR FORMING METAL OXIDE FILM, AND METAL OXIDE FILM 有权
标题翻译：用于形成金属氧化物膜的方法，形成金属氧化物膜的方法和金属氧化物膜
公开(公告)号：US20130039843A1
公开(公告)日：2013-02-14
申请号：US13643380
申请日：2010-06-01
申请人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Shizuo Fujita , Toshiyuki Kawaharamura
发明人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Shizuo Fujita , Toshiyuki Kawaharamura
IPC分类号： C23C16/06 , C01B13/00 , C23C16/02
CPC分类号： C23C16/407 , C23C18/1216 , C23C18/1279 , C23C18/1287 , C23C18/1291
摘要： A film forming apparatus (100) according to one embodiment of the present invention includes a first solution container (5A), a second solution container (5B), a reaction chamber (1), a first path (L1), and a second path (L2). The first solution container (5A) stores a source solution (10) containing metal. The second solution container (5B) stores hydrogen peroxide. A substrate (2) is disposed in the reaction chamber (1), and the reaction chamber (1) includes a heating unit (3) that heats the substrate. The first path (L1) supplies a source solution (11) from the first solution container (5A) to the reaction chamber (1). The second path (L2) supplies hydrogen peroxide from the second solution container (5B) to the reaction chamber (1).
摘要翻译：根据本发明的一个实施方案的成膜设备（100）包括第一溶液容器（5A），第二溶液容器（5B），反应室（1），第一路径（L1）和第二路径（L2）。第一溶液容器（5A）存储含有金属的源溶液（10）。第二溶液容器（5B）存储过氧化氢。基板（2）设置在反应室（1）中，反应室（1）包括加热基板的加热单元（3）。第一路径（L1）将源解决方案（11）从第一溶液容器（5A）供应到反应室（1）。第二路径（L2）从第二溶液容器（5B）向反应室（1）供应过氧化氢。

8. 发明申请

US20120040083A1 METHOD FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM, AND APPARATUS FOR FORMING METAL OXIDE FILM 有权
标题翻译：形成金属氧化物膜，金属氧化物膜的方法和形成金属氧化物膜的装置
公开(公告)号：US20120040083A1
公开(公告)日：2012-02-16
申请号：US13265193
申请日：2009-04-20
申请人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida , Shizuo Fujita , Naoki Kameyama
发明人： Hiroyuki Orita , Takahiro Shirahata , Akio Yoshida , Shizuo Fujita , Naoki Kameyama
IPC分类号： C23C16/40 , C23C16/448 , C23C16/52
CPC分类号： C23C16/407 , C23C16/405 , C23C16/448 , C23C16/4486
摘要： The present invention aims at providing a method for forming a metal oxide film which can further improve the production efficiency while maintaining low resistance of a metal oxide film formed thereby. In the method for forming a metal oxide film of the present invention, a solution (4) containing a metallic element and ammonia (4a) is formed into a mist. Meanwhile, a substrate (2) is heated. Then, the solution (4) formed into a mist is supplied onto a first main surface of the substrate (2) being heated.
摘要翻译：本发明旨在提供一种形成金属氧化物膜的方法，其可以进一步提高生产效率，同时保持由此形成的金属氧化物膜的低电阻。在本发明的金属氧化物膜的形成方法中，含有金属元素和氨（4a）的溶液（4）形成为雾状。同时，加热基板（2）。然后，将形成为雾的溶液（4）供给到被加热的基板（2）的第一主面上。

9. 发明申请

US20110151619A1 METHOD OF FORMING METAL OXIDE FILM AND APPARATUS FOR FORMING METAL OXIDE FILM 审中-公开
标题翻译：形成金属氧化物膜的方法和形成金属氧化物膜的装置
公开(公告)号：US20110151619A1
公开(公告)日：2011-06-23
申请号：US13059128
申请日：2008-09-24
申请人： Hiroyuki Orita , Akio Yoshida , Masahisa Kogura , Takahiro Shirahata , Syuji Tanaka
发明人： Hiroyuki Orita , Akio Yoshida , Masahisa Kogura , Takahiro Shirahata , Syuji Tanaka
IPC分类号： H01L21/36 , H01L21/443
CPC分类号： C23C16/482 , C23C16/407 , C23C16/452 , C23C16/45523
摘要： A method of forming a metal oxide film, which can lower a temperature of a heat treatment of a substrate and also can form a metal oxide film having a low resistance value without limiting the kind of the metal oxide film to be formed. The method of forming a metal oxide film includes (A) converting a solution containing a metal into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.
摘要翻译：一种形成金属氧化物膜的方法，其可以降低基板的热处理温度，并且还可以形成具有低电阻值的金属氧化物膜，而不限制要形成的金属氧化物膜的种类。形成金属氧化物膜的方法包括：（A）将含有金属的溶液转化为雾，（B）加热基板，（C）将转化成雾的溶液和臭氧供给到基板的第一主表面加热。

10. 发明申请

US20110143053A1 METHOD OF FORMING ZINC OXIDE FILM (ZNO) OR MAGNESIUM ZINC OXIDE FILM (ZNMGO) AND APPARATUS FOR FORMING ZINC OXIDE FILM OR MAGNESIUM ZINC OXIDE FILM 有权
标题翻译：形成氧化锌膜（ZNO）或氧化镁膜（ZNMGO）的方法和形成氧化锌膜或氧化镁氧化膜的装置
公开(公告)号：US20110143053A1
公开(公告)日：2011-06-16
申请号：US13059356
申请日：2008-09-24
申请人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Masahisa Kogura
发明人： Takahiro Shirahata , Hiroyuki Orita , Akio Yoshida , Masahisa Kogura
IPC分类号： C23C16/513 , C23C16/40 , C23C16/44 , C23C16/48
CPC分类号： C23C16/4486 , C23C16/407 , C23C16/452 , C23C16/45523 , C23C16/482 , C23C18/12 , C23C18/1216 , C23C18/1279 , C23C18/1291 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02628
摘要： A method of forming a zinc oxide film or a magnesium zinc oxide film which has a high transmittance. The method of forming a zinc oxide film or a magnesium zinc oxide film includes (A) converting a solution containing zinc, or zinc and magnesium into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.
摘要翻译：形成透光率高的氧化锌膜或氧化镁锌膜的方法。形成氧化锌膜或镁氧化锌膜的方法包括：（A）将含有锌或锌和镁的溶液转化成雾，（B）加热基板，（C）供给转化成雾的溶液，以及臭氧加热到基板的第一主表面。

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