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1. 发明授权

US07091659B2 Organic electro luminescence element and manufacturing method thereof 有权
标题翻译：有机电致发光元件及其制造方法
公开(公告)号：US07091659B2
公开(公告)日：2006-08-15
申请号：US10832452
申请日：2004-04-27
申请人： Hiroyuki Fuchigami , Kazushi Yamayoshi , Tomoyuki Irizumi , Koji Oda
发明人： Hiroyuki Fuchigami , Kazushi Yamayoshi , Tomoyuki Irizumi , Koji Oda
IPC分类号： H05B33/26
CPC分类号： H01L27/3246 , H01L27/3283 , H01L51/0021 , H01L51/5218 , H01L2251/5315
摘要： An organic electro luminescence element includes a substrate, an anode isolating film formed of an insulator on the substrate, an anode conductive layer formed on an upper surface of the substrate in an area partitioned by the anode isolating film, and an element isolating film formed of an insulator to enclose the anode isolating film and to be wider downward. Further, on the upper surface of the anode isolating film, a conductive film of the same type as the anode conductive layer is formed, which conductive layer is also covered by the element isolating film. Preferably, the anode isolating film has its upper surface made larger than the lower surface.
摘要翻译：有机电致发光元件包括基板，由基板上的绝缘体形成的阳极隔离膜，在由阳极隔离膜分隔的区域中形成在基板的上表面上的阳极导电层，以及由阳极隔离膜形成的元件隔离膜，绝缘体，以封闭阳极隔离膜并向下较宽。此外，在阳极隔离膜的上表面上，形成与阳极导电层相同类型的导电膜，该导电层也被元件隔离膜覆盖。优选地，阳极隔离膜的上表面大于下表面。

2. 发明申请

US20100112790A1 METHOD OF MANUFACTURING SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体薄膜和半导体器件的方法
公开(公告)号：US20100112790A1
公开(公告)日：2010-05-06
申请号：US12596453
申请日：2007-12-05
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Shinsuke Yura , Toru Takeguchi , Tomoyuki Irizumi , Kazushi Yamayoshi , Atsuhiro Sono
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Shinsuke Yura , Toru Takeguchi , Tomoyuki Irizumi , Kazushi Yamayoshi , Atsuhiro Sono
IPC分类号： H01L21/20 , H01L21/268
CPC分类号： H01L21/02675 , H01L21/02532 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/0657
摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.
摘要翻译：在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次，激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05，在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

3. 发明申请

US20080135909A1 DISPLAY DEVICE AND METHOD OF PRODUCING THE SAME 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20080135909A1
公开(公告)日：2008-06-12
申请号：US11948377
申请日：2007-11-30
申请人： Toru Takeguchi , Takuji Imamura , Kazushi Yamayoshi , Tomoyuki Irizumi , Atsunori Nishiura , Kaoru Motonami
发明人： Toru Takeguchi , Takuji Imamura , Kazushi Yamayoshi , Tomoyuki Irizumi , Atsunori Nishiura , Kaoru Motonami
IPC分类号： H01L27/108 , H01L21/02
CPC分类号： H01L28/60 , G02F1/136213 , G02F1/136227 , H01L27/1255 , H01L27/1288
摘要： In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.
摘要翻译：在使用多晶半导体膜的薄膜晶体管中，当形成存储电容时，通常多晶半导体膜也用于一个容量的电极中。在具有具有多晶半导体膜的存储电容器和薄膜晶体管的显示装置中，存储电容器由于半导体膜而呈现电压依赖性，因此导致显示不良。在本发明的显示装置中，金属导电膜5层叠在用作保持电容器130的下电极的多晶半导体膜的半导体层4d的上方。

4. 发明授权

US08080450B2 Method of manufacturing semiconductor thin film 有权
标题翻译：制造半导体薄膜的方法
公开(公告)号：US08080450B2
公开(公告)日：2011-12-20
申请号：US12596453
申请日：2007-12-05
申请人： Kazuyuki Sugahara , Naoki Nakagawa , Shinsuke Yura , Toru Takeguchi , Tomoyuki Irizumi , Kazushi Yamayoshi , Atsuhiro Sono
发明人： Kazuyuki Sugahara , Naoki Nakagawa , Shinsuke Yura , Toru Takeguchi , Tomoyuki Irizumi , Kazushi Yamayoshi , Atsuhiro Sono
IPC分类号： H01L21/84 , H01L21/00 , H01L21/205
CPC分类号： H01L21/02675 , H01L21/02532 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/0657
摘要： On a translucent substrate, an insulating film having a refractive index n and an amorphous silicon film are deposited successively. By irradiating the amorphous silicon film with a laser beam having a beam shape of a band shape extending along a length direction with a wavelength λ, a plurality of times from a side of amorphous silicon film facing the insulating film, while an irradiation position of the laser beam is shifted each of the plurality of times in a width direction of the band shape by a distance smaller than a width dimension of the band shape, a polycrystalline silicon film is formed from the amorphous silicon film. Forming the polycrystalline silicon film forms crystal grain boundaries which extend in the width direction and are disposed at a mean spacing measured along the length direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive, and crystal grain boundaries which, in a region between crystal grain boundaries adjacent to each other and extending in the width direction, extend in the length direction and are disposed at a mean spacing measured along the width direction and ranging from (λ/n)×0.95 to (λ/n)×1.05 inclusive.
摘要翻译：在半透明基板上，依次沉积具有折射率n的绝缘膜和非晶硅膜。通过从具有波长λ方向的波长形状的波束形状的激光束照射非晶硅膜，从非晶硅膜的与绝缘膜相对的侧面多次，激光束在带状的宽度方向上多次移动距离小于带状的宽度尺寸的距离，由非晶硅膜形成多晶硅膜。形成多晶硅膜形成在宽度方向上延伸的晶粒边界，并且以沿长度方向测量的平均间隔设置，范围为（λ/ n）×0.95〜（λ/ n）×1.05，在彼此相邻并且在宽度方向上延伸的晶粒边界之间的区域中，在长度方向上延伸并沿宽度方向测量的平均间隔设置在（λ/ n）×0.95〜（ λ/ n）×1.05（含）。

5. 发明授权

US07754541B2 Display device and method of producing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07754541B2
公开(公告)日：2010-07-13
申请号：US11948377
申请日：2007-11-30
申请人： Toru Takeguchi , Takuji Imamura , Kazushi Yamayoshi , Tomoyuki Irizumi , Atsunori Nishiura , Kaoru Motonami
发明人： Toru Takeguchi , Takuji Imamura , Kazushi Yamayoshi , Tomoyuki Irizumi , Atsunori Nishiura , Kaoru Motonami
IPC分类号： H01L21/00
CPC分类号： H01L28/60 , G02F1/136213 , G02F1/136227 , H01L27/1255 , H01L27/1288
摘要： In a thin film transistor using a polycrystalline semiconductor film, when a storage capacitor is formed, it is often that a polycrystalline semiconductor film is used also in one electrode of the capacity. In a display device having a storage capacitor and thin film transistor which have a polycrystalline semiconductor film, the storage capacitor exhibits a voltage dependency due to the semiconductor film, and hence a display failure is caused. In the display device of the invention, a metal conductive film 5 is stacked above a semiconductor layer 4d made of a polycrystalline semiconductor film which is used as a lower electrode of a storage capacitor 130.
摘要翻译：在使用多晶半导体膜的薄膜晶体管中，当形成存储电容时，通常多晶半导体膜也用于一个容量的电极中。在具有具有多晶半导体膜的存储电容器和薄膜晶体管的显示装置中，存储电容器由于半导体膜而呈现电压依赖性，因此导致显示不良。在本发明的显示装置中，金属导电膜5堆叠在用作存储电容器130的下电极的多晶半导体膜制成的半导体层4d的上方。

6. 发明申请

US20110198606A1 THIN FILM TRANSISTOR AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管和显示器件
公开(公告)号：US20110198606A1
公开(公告)日：2011-08-18
申请号：US13010281
申请日：2011-01-20
申请人： Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
发明人： Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
IPC分类号： H01L33/16 , H01L29/786
CPC分类号： H01L29/78696 , H01L29/04
摘要： An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.
摘要翻译：本发明的示例性方面是一种薄膜晶体管，包括：形成在基板上的栅电极; 栅极绝缘膜，其包括氮化物膜并覆盖所述栅电极; 以及半导体层，其被设置为与栅极电极相对设置，其间具有栅极绝缘膜，并且具有形成在至少与氮化物膜接触的界面中的微晶半导体层，其中微晶半导体层包含氧在至少与氮化物膜的界面附近的浓度高于含氮的浓度，氮从氮化膜扩散。

7. 发明授权

US08487309B2 Thin film transistor with a semiconductor layer that includes a microcrystalline semiconductor layer and display device 有权
标题翻译：具有包括微晶半导体层和显示装置的半导体层的薄膜晶体管
公开(公告)号：US08487309B2
公开(公告)日：2013-07-16
申请号：US13010281
申请日：2011-01-20
申请人： Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
发明人： Koji Oda , Tomoyuki Irizumi , Naoki Nakagawa , Takeshi Ono
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L29/04
摘要： An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film.
摘要翻译：本发明的示例性方面是一种薄膜晶体管，包括：形成在基板上的栅电极; 栅极绝缘膜，其包括氮化物膜并覆盖所述栅电极; 以及半导体层，其被设置为与栅极电极相对设置，其间具有栅极绝缘膜，并且具有形成在至少与氮化物膜接触的界面中的微晶半导体层，其中微晶半导体层包含氧在至少与氮化物膜的界面附近的浓度高于含氮的浓度，氮从氮化膜扩散。

8. 发明授权

US07923725B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07923725B2
公开(公告)日：2011-04-12
申请号：US12470080
申请日：2009-05-21
申请人： Tomoyuki Irizumi
发明人： Tomoyuki Irizumi
IPC分类号： H01L29/04
CPC分类号： H01L29/78669 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： According to a method of manufacturing a semiconductor device of the present invention, a gate electrode is formed above a substrate, and a insulating film is formed above the gate electrode. Then, an amorphous semiconductor film is formed above the insulating film, laser annealing is performed on the amorphous semiconductor film, and the amorphous semiconductor film is changed to a crystalline semiconductor film. After that, hydrofluoric acid processing is performed on the crystalline semiconductor film, and an amorphous semiconductor film is formed above the crystalline semiconductor film where the hydrofluoric acid processing is performed so that pattern ends of the amorphous semiconductor film are arranged outside pattern ends of the crystalline semiconductor film and the amorphous semiconductor film contacts with the insulating film near the pattern ends.
摘要翻译：根据本发明的半导体装置的制造方法，在基板的上方形成栅电极，在栅电极的上方形成绝缘膜。然后，在绝缘膜的上方形成非晶半导体膜，对非晶半导体膜进行激光退火，将非晶半导体膜变更为结晶半导体膜。之后，对结晶半导体膜进行氢氟酸处理，在结晶半导体膜的上方形成非晶半导体膜，在其上进行氢氟酸处理，使得非晶半导体膜的图案末端排列在晶体半导体膜和非晶半导体膜在图案端附近与绝缘膜接触。

9. 发明授权

US06784117B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06784117B2
公开(公告)日：2004-08-31
申请号：US10278949
申请日：2002-10-24
申请人： Tomoyuki Irizumi
发明人： Tomoyuki Irizumi
IPC分类号： H01L2131
CPC分类号： H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/31612
摘要： In a method for manufacturing a semiconductor device having a USG film 5 formed on a semiconductor substrate 1 in which an N+-type active region 2 and a P+-type active region 3 are formed, an oxide film 4 is formed on the semiconductor substrate 1 and the USG film 5 is formed on the oxide film 4. Because the influence of the characteristic difference of an underlying layer on the formation of the USG film 5 can be avoided due to the existence of the oxide film, the USG film 5 can be formed in a uniform thickness over regions including the semiconductor substrate 1, the P+-type active region 3 and the N+-type active region 2.
摘要翻译：在形成有形成在其中形成有N +型有源区2和P +型有源区3的半导体衬底1上的USG膜5的半导体器件的制造方法中，在半导体衬底1上形成氧化物膜4 并且在氧化物膜4上形成USG膜5.由于由于氧化物膜的存在可以避免下层的特征差异对USG膜5的形成的影响，因此USG膜5可以在包括半导体衬底1，P +型有源区3和N +型有源区2的区域上形成均匀的厚度。

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