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1. 发明授权

US07495215B2 Probe for a scanning magnetic force microscope, method for producing the same, and method for forming ferromagnetic alloy film on carbon nanotubes 有权
标题翻译：扫描磁力显微镜的探针及其制造方法以及在碳纳米管上形成铁磁性合金膜的方法
公开(公告)号：US07495215B2
公开(公告)日：2009-02-24
申请号：US11322180
申请日：2005-12-28
申请人： Hiroyuki Akinaga , Yasuyuki Semba , Hiroshi Yokoyama , Masatoshi Yasutake , Hiromi Kuramochi
发明人： Hiroyuki Akinaga , Yasuyuki Semba , Hiroshi Yokoyama , Masatoshi Yasutake , Hiromi Kuramochi
IPC分类号： G01N23/00
CPC分类号： G01Q60/56 , G01Q70/12 , Y10S977/84 , Y10S977/842 , Y10T428/30
摘要： The present invention provides a probe for a scanning magnetic force microscope having a resolution sufficient to allow observation of a magnetic storage medium with 1200 kFCI or higher recording densities, a method for producing the probe, and a method for forming a ferromagnetic alloy film on a carbon nanotube. In the context of the present invention, the probe for a scanning magnetic force microscope comprises a carbon nanotube whose surface is at least in part coated with a ferromagnetic alloy film consisting of any one of a Co—Fe alloy and a Co—Ni alloy, wherein the arithmetic mean roughness (Ra 10 μm) of the surface of the ferromagnetic alloy film is controlled to 1.15 nm or less. A method for producing such probes for a scanning magnetic force microscope and a method for forming such a ferromagnetic alloy film on a carbon nanotube, so as to achieve such mean surface roughness by controlling the growth rate of the ferromagnetic alloy film within the range of 1.0 to 2.5 nm/min, is also disclosed.
摘要翻译：本发明提供了一种扫描磁力显微镜的探针，其具有足以允许观察具有1200kFCI或更高记录密度的磁存储介质的分辨率的扫描磁力显微镜，该探针的制造方法以及用于形成铁磁性合金膜的方法碳纳米管。在本发明的上下文中，用于扫描磁力显微镜的探针包括其表面至少部分地涂覆有由Co-Fe合金和Co-Ni合金中的任一种构成的铁磁性合金膜的碳纳米管，其中铁磁性合金膜的表面的算术平均粗糙度（Ra 10 mum）被控制在1.15nm以下。一种用于扫描磁力显微镜的这种探针的制造方法以及在碳纳米管上形成这种铁磁性合金膜的方法，以便通过将铁磁性合金膜的生长速度控制在1.0的范围内来实现这种平均表面粗糙度至2.5nm / min。

2. 发明申请

US20080166560A1 PROBE FOR A SCANNING MAGNETIC FORCE MICROSCOPE, METHOD FOR PRODUCING THE SAME, AND METHOD FOR FORMING FERROMAGNETIC ALLOY FILM ON CARBON NANOTUBES 有权
标题翻译：用于扫描磁力显微镜的探针，其制造方法，以及在碳纳米管上形成铁磁性合金膜的方法
公开(公告)号：US20080166560A1
公开(公告)日：2008-07-10
申请号：US11322180
申请日：2005-12-28
申请人： Hiroyuki Akinaga , Yasuyuki Semba , Hiroshi Yokoyama , Masatoshi Yasutake , Hiromi Kuramochi
发明人： Hiroyuki Akinaga , Yasuyuki Semba , Hiroshi Yokoyama , Masatoshi Yasutake , Hiromi Kuramochi
IPC分类号： B32B9/00
CPC分类号： G01Q60/56 , G01Q70/12 , Y10S977/84 , Y10S977/842 , Y10T428/30
摘要： The present invention provides a probe for a scanning magnetic force microscope having a resolution sufficient to allow observation of a magnetic storage medium with 1200 kFCI or higher recording densities, a method for producing the probe, and a method for forming a ferromagnetic alloy film on a carbon nanotube. In the context of the present invention, the probe for a scanning magnetic force microscope comprises a carbon nanotube whose surface is at least in part coated with a ferromagnetic alloy film consisting of any one of a Co—Fe alloy and a Co—Ni alloy, wherein the arithmetic mean roughness (Ra 10 μm) of the surface of the ferromagnetic alloy film is controlled to 1.15 nm or less. A method for producing such probes for a scanning magnetic force microscope and a method for forming such a ferromagnetic alloy film on a carbon nanotube, so as to achieve such mean surface roughness by controlling the growth rate of the ferromagnetic alloy film within the range of 1.0 to 2.5 nm/min, is also disclosed.
摘要翻译：本发明提供了一种扫描磁力显微镜的探针，其具有足以允许观察具有1200kFCI或更高记录密度的磁存储介质的分辨率的扫描磁力显微镜，该探针的制造方法以及用于形成铁磁性合金膜的方法碳纳米管。在本发明的上下文中，用于扫描磁力显微镜的探针包括其表面至少部分地涂覆有由Co-Fe合金和Co-Ni合金中的任一种构成的铁磁合金膜的碳纳米管，其中铁磁性合金膜的表面的算术平均粗糙度（Ra 10 mum）被控制在1.15nm以下。一种用于扫描磁力显微镜的这种探针的制造方法以及在碳纳米管上形成这种铁磁性合金膜的方法，以便通过将铁磁性合金膜的生长速度控制在1.0的范围内来实现这种平均表面粗糙度至2.5nm / min。

3. 发明授权

US06817231B2 Scanning probe microscope for ultra sensitive electro-magnetic field detection and probe thereof 失效
标题翻译：扫描探针显微镜用于超敏感电磁场检测及其探针
公开(公告)号：US06817231B2
公开(公告)日：2004-11-16
申请号：US10331540
申请日：2002-12-27
申请人： Masatoshi Yasutake , Hiroyuki Akinaga , Hiroshi Yokoyama
发明人： Masatoshi Yasutake , Hiroyuki Akinaga , Hiroshi Yokoyama
IPC分类号： G01B528
CPC分类号： G01Q60/54 , G01Q70/12 , Y10S977/865 , Y10S977/879
摘要： The object of the present invention is to provide a method and device thereof that captures microscopic magnetic signals such as those developed by electrical current flowing inside a circuit that is miniaturized to less than sub-micron order, and to evaluate the circuit. The scanning probe microscope for ultra-sensitive electro-magnetic field detection of the present invention has a constitution that uses a giant magnetostrictive material that demonstrates a large magnetostriction characteristic in a weak magnetic field in at least one portion of the probe of a cantilever of a scanning probe microscope, and at the same time as capturing the change in the magnetic flux due to a local change in electrical current, or the magnetic flux of a magnetic body, as a signal of displacement of said giant magnetostrictive material, on the other hand, detects the local shape of a sample surface with the function of the scanning probe microscope, and dissociates and images the magnetic flux information and shape information from the signal of displacement of the giant magnetostrictive material.
摘要翻译：本发明的目的是提供一种捕获微小磁信号的方法和装置，例如通过在小于小于亚微米级的电路内流动的电流产生的信号，并评估该电路。本发明的超灵敏电磁场检测用扫描探针显微镜具有以下结构：使用在磁悬浮的探针的至少一部分中的弱磁场中表现出大的磁致伸缩特性的大型磁致伸缩材料扫描探针显微镜，并且同时作为所述大磁致伸缩材料的位移信号捕获由于电流的局部变化或磁体的磁通量引起的磁通量的变化，另一方面利用扫描探针显微镜的功能，检测样品表面的局部形状，并从大型磁致伸缩材料的位移信号中解离并成像磁通量信息和形状信息。

4. 发明授权

US07964924B2 Magnetoresistance effect device and magnetism sensor using the same 失效
标题翻译：磁阻效应器和使用其的磁传感器
公开(公告)号：US07964924B2
公开(公告)日：2011-06-21
申请号：US10514711
申请日：2002-05-24
申请人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
发明人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
IPC分类号： H01L29/82
CPC分类号： H01F10/1936 , B82Y25/00 , G01R33/09 , G01R33/093 , G01R33/1269 , H01L27/222 , H01L43/08 , Y10T428/12465
摘要： A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 μm disposed at intervals of not more than 1 μm, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.
摘要翻译：磁阻效应器件（1）包括：半导体区域（2），具有设置有不大于100μm的间隔不大于1μm的多个隔离金属微粒（3）的表面，半导体区域（2），半导体或用于覆盖半导体区域的半金属盖层（4）和设置在盖层的表面上并彼此分离的多个电极（5）。该装置在室温下表现出高的磁阻效应，对磁场高度敏感，并且可以通过简单的制造工艺制造。该器件由容易匹配半导体制造工艺的耐磁材料形成。使用该装置（1）的磁场传感器具有各种优异的特性。

5. 发明申请

US20080054243A1 Switching elements and production methods thereof 有权
标题翻译：开关元件及其制造方法
公开(公告)号：US20080054243A1
公开(公告)日：2008-03-06
申请号：US11881575
申请日：2007-07-26
申请人： Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano , Yukio Tamai
发明人： Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano , Yukio Tamai
IPC分类号： H01L47/00 , H01L21/8242
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： The present invention provides switching elements having a readout margin suitable for data storage units of nonvolatile memories, which are obtained by improving the resistance ratio of metal oxide thin films having reversible variable resistance properties. The present invention provides switching elements having a metal oxide consisting of a transition metal and oxygen formed between a first electrode and a second electrode, by modifying one or more of the crystal structure, ionic valence number of metal element, and nonstoichiometricity of a stoichiometric compound consisted of the transition metal and oxygen. The present invention also provides methods for producing switching elements having reversible variable resistance characteristics due to electric power application history
摘要翻译：本发明提供了具有适合于非易失性存储器的数据存储单元的读出裕度的开关元件，其通过改善具有可逆可变电阻特性的金属氧化物薄膜的电阻比而获得。本发明提供了通过改变晶体结构，金属元素的离子价数和化学计量比的化学计量的一种或多种来形成具有由过渡金属和氧形成的金属氧化物的开关元件，所述过渡金属和氧形成在第一电极和第二电极之间由过渡金属和氧气组成。本发明还提供了由于电力使用历史而产生具有可逆电阻特性的开关元件的方法

6. 发明申请

US20060099437A1 Magnetoresistance effect device and magnetism sensor using the same 失效
标题翻译：磁阻效应器和使用其的磁传感器
公开(公告)号：US20060099437A1
公开(公告)日：2006-05-11
申请号：US10514711
申请日：2002-05-24
申请人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
发明人： Hiroyuki Akinaga , Masaharu Oshima , Masaki Mizuguchi
IPC分类号： H01F1/00
CPC分类号： H01F10/1936 , B82Y25/00 , G01R33/09 , G01R33/093 , G01R33/1269 , H01L27/222 , H01L43/08 , Y10T428/12465
摘要： A magneto-resistance effect device (1) includes a semiconductor region (2) having a surface provided with a plurality of isolated metal micro-particles (3) of not more than 100 μm disposed at intervals of not more than 1 μm, a semiconductor or half-metal cap layer (4) for covering the semiconductor region and a plurality of electrodes (5) disposed on a surface of the cap layer and separated from each other. The device exhibits a high magneto-resistance effect at room temperature, is highly sensible to a magnetic field and can be produced through a simple manufacturing process. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. A magnetic field sensor using the device (1) has various excellent characteristics.
摘要翻译：磁阻效应器件（1）包括半导体区域（2），其具有设置有不大于1um的间隔设置的不大于100μm的多个隔离金属微粒（3）的表面，半导体或用于覆盖半导体区域的半金属盖层（4）和设置在盖层的表面上并彼此分离的多个电极（5）。该装置在室温下表现出高的磁阻效应，对磁场高度敏感，并且可以通过简单的制造工艺制造。该器件由容易匹配半导体制造工艺的耐磁材料形成。使用该装置（1）的磁场传感器具有各种优异的特性。

7. 发明授权

US07923711B2 Switching elements and production methods thereof 有权
标题翻译：开关元件及其制造方法
公开(公告)号：US07923711B2
公开(公告)日：2011-04-12
申请号：US11881575
申请日：2007-07-26
申请人： Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano , Yukio Tamai
发明人： Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano , Yukio Tamai
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： The present invention provides switching elements having a readout margin suitable for data storage units of nonvolatile memories, which are obtained by improving the resistance ratio of metal oxide thin films having reversible variable resistance properties. The present invention provides switching elements having a metal oxide consisting of a transition metal and oxygen formed between a first electrode and a second electrode, by modifying one or more of the crystal structure, ionic valence number of metal element, and nonstoichiometricity of a stoichiometric compound consisted of the transition metal and oxygen. The present invention also provides methods for producing switching elements having reversible variable resistance characteristics due to electric power application history.
摘要翻译：本发明提供了具有适合于非易失性存储器的数据存储单元的读出裕度的开关元件，其通过改善具有可逆可变电阻特性的金属氧化物薄膜的电阻比而获得。本发明提供了通过改变晶体结构，金属元素的离子价数和化学计量比的化学计量的一种或多种来形成具有由过渡金属和氧形成的金属氧化物的开关元件，所述过渡金属和氧形成在第一电极和第二电极之间由过渡金属和氧气组成。本发明还提供了由于电力使用历史而产生具有可逆电阻特性的开关元件的方法。

8. 发明申请

US20100172170A1 VARIABLE RESISTIVE ELEMENT, MANUFACTURING METHOD FOR SAME, AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：可变电阻元件，其制造方法和非易失性半导体存储器件
公开(公告)号：US20100172170A1
公开(公告)日：2010-07-08
申请号：US12598642
申请日：2008-04-07
申请人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
发明人： Yukio Tamai , Yasunari Hosoi , Nobuyoshi Awaya , Shigeo Ohnishi , Kazuya Ishihara , Hisashi Shima , Hiroyuki Akinaga , Fumiyoshi Takano
IPC分类号： G11C11/56 , H01L29/22 , H01L21/44
CPC分类号： G11C13/0011 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/0073 , G11C2013/0083 , G11C2013/009 , G11C2213/32 , G11C2213/34 , G11C2213/51 , G11C2213/56 , G11C2213/77 , H01L27/101 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.
摘要翻译：提供一种执行高速和低功耗操作的可变电阻元件。可变电阻元件包括在第一和第二电极之间的金属氧化物层，其中第一和第二电极之间的电阻根据跨越第一和第二电极的电应力的应用而可逆地改变。金属氧化物层具有灯丝，其是在第一和第二电极之间流动的电流的密度局部增加的电流路径。在特定电极和金属氧化物层之间的界面上至少包括作为第一和第二电极中的一个或两个的特定电极和灯丝之间的界面附近的部分设置有界面氧化物，其界面氧化物是包含在该特定电极中并且与金属氧化物层的氧化物不同的至少一种元素的氧化物。

9. 发明申请

US20100012911A1 SWITCHING DEVICE 有权
标题翻译：切换设备
公开(公告)号：US20100012911A1
公开(公告)日：2010-01-21
申请号：US11990612
申请日：2006-08-08
申请人： Hiroyuki Akinaga , Shuichiro Yasuda , Isao Inoue , Hidenori Takagi
发明人： Hiroyuki Akinaga , Shuichiro Yasuda , Isao Inoue , Hidenori Takagi
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： An objective of the present invention is to provide a switching device that shows two markedly different stable resistance characteristics reversibly and repetitively, and which is applicable to highly integrated nonvolatile memories.The present invention provides a switching device, which comprises a variable resistor element that has, between two electrodes, a metal-oxide thin-film comprising a single central metal element with a compositional variation; which is connected to a control circuit which can apply, between said two electrodes, a voltage or a current selected from among a voltage or a current of the first threshold or higher, a voltage or a current of the second threshold or lower whose absolute value is smaller than the absolute value of said first threshold, and a voltage or a current of the third threshold or lower whose absolute value is smaller than the absolute value of said second threshold; and in which the interelectrode resistance characteristic reversibly changes by a factor of 1,000 to 10,000 in the voltage or current region whose absolute value is equal to or below the third threshold.
摘要翻译：本发明的目的是提供一种可逆地重复显示两个明显不同的稳定电阻特性的开关装置，其可应用于高度集成的非易失性存储器。本发明提供一种开关装置，其包括可变电阻元件，该可变电阻元件在两个电极之间具有包含具有组成变化的单个中心金属元素的金属氧化物薄膜; 连接到可以在所述两个电极之间施加从第一阈值或更高的电压或电流中选择的电压或电流的控制电路，其绝对值的第二阈值或更低的电压或电流小于所述第一阈值的绝对值，绝对值小于所述第二阈值的绝对值的第三阈值以上的电压或电流; 并且其绝缘值等于或低于第三阈值的电压或电流区域中的电极间电阻特性可逆地改变1,000至10,000倍。

10. 发明授权

US06610421B2 Spin electronic material and fabrication method thereof 失效
公开(公告)号：US06610421B2
公开(公告)日：2003-08-26
申请号：US09947513
申请日：2001-09-07
申请人： Hiroyuki Akinaga , Masafumi Shirai , Takashi Manago
发明人： Hiroyuki Akinaga , Masafumi Shirai , Takashi Manago
IPC分类号： C22C2700
CPC分类号： C01G45/00 , B82Y25/00 , C01G9/00 , C01G31/00 , C01G37/00 , C01P2006/42 , H01F10/1936 , H01F10/3213 , H01F41/30 , Y10T428/12681 , Y10T428/12771 , Y10T428/31678
摘要： A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.

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