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    • 1. 发明授权
    • Thin film memory cell
    • 薄膜存储单元
    • US5278428A
    • 1994-01-11
    • US720895
    • 1991-06-25
    • Hiroyasu YamadaHiroshi MatsumotoSyunichi Sato
    • Hiroyasu YamadaHiroshi MatsumotoSyunichi Sato
    • G11C16/04H01L27/115H01L29/792H01L29/04H01L27/108H01L31/036H01L31/20
    • G11C16/0466H01L27/115H01L29/792
    • A memory cell has a thin film memory transistor and a thin film selective transistor. The thin film memory transistor has a charge trapping structure and a positive-negative-charge occurrence structure. The charge trapping structure includes a first thin film semiconductor layer, an insulating memory gate layer formed on the first thin film semiconductor layer, and a memory gate electrode. The positive-negative-charge occurrence structure includes an impurity high density layer with a portion facing the memory gate electrode. The thin film selective transistor is coupled to the thin film memory transistor in a serial form and has an only n-channel occurrence structure which includes a second thin film semiconductor layer, an insulating selective gate layer formed on the second thin film semiconductor layer and being thicker than the insulating memory gate layer, and a selective gate electrode formed on said insulating selective gate layer.
    • 存储单元具有薄膜存储晶体管和薄膜选择晶体管。 薄膜存储晶体管具有电荷捕获结构和正负电荷发生结构。 电荷捕获结构包括第一薄膜半导体层,形成在第一薄膜半导体层上的绝缘存储栅极层和存储栅电极。 正 - 负电荷发生结构包括具有面向存储栅电极的部分的杂质高密度层。 薄膜选择晶体管以串行形式耦合到薄膜存储晶体管,并且具有唯一的n沟道出现结构,其包括第二薄膜半导体层,形成在第二薄膜半导体层上的绝缘选择栅层,并且是 比绝缘存储器栅极层厚,以及形成在所述绝缘选择栅极层上的选择栅电极。
    • 2. 发明授权
    • Thin film transistor having memory function and method for using thin
film transistor as memory element
    • 具有记忆功能的薄膜晶体管和使用薄膜晶体管作为存储元件的方法
    • US5196912A
    • 1993-03-23
    • US668741
    • 1991-03-13
    • Hiroshi MatsumotoHiroyasu YamadaNobuyuki YamamuraShinichi ShimomakiNaohiro KonyaKyuya Baba
    • Hiroshi MatsumotoHiroyasu YamadaNobuyuki YamamuraShinichi ShimomakiNaohiro KonyaKyuya Baba
    • H01L27/115H01L29/792
    • H01L27/115H01L29/792
    • A memory element is formed of a thin film transistor. The thin film transistor has a semiconductor layer, a source electrode electrically connected to the semiconductor layer, a drain electrode electrically connected to the semiconductor layer and formed separately from the source electrode, a gate electrode for controlling formation of a channel of the semiconductor layer, and a gate insulation film for isolating the gate electrode and the semiconductor layer from each other and causing a hysteresis in the relation between the drain current and the gate circuit. The insulation film is a silicon nitride film whose composition ratio of silicon to nitrogen is in a range of approx. 0.85 to 1.1. According to this invention, the relation between the gate voltage and the drain current can be set to have a hysteresis. Therefore, the thin film transistor can be used as a memory element. Further, according to this invention, data can be written, erased and read out by selectively applying an electric field to the gate insulation film. Therefore, the thin film transistor can be used as a memory element.
    • 存储元件由薄膜晶体管形成。 薄膜晶体管具有半导体层,与半导体层电连接的源电极,与半导体层电连接并与源极分开形成的漏电极,用于控制半导体层的沟道的形成的栅电极, 以及用于将栅极电极和半导体层彼此隔离并且在漏极电流和栅极电路之间的关系中产生滞后的栅极绝缘膜。 绝缘膜是硅与氮的组成比在大约的范围内的氮化硅膜。 0.85〜1.1。 根据本发明,可以将栅极电压和漏极电流之间的关系设定为滞后。 因此,薄膜晶体管可以用作存储元件。 此外,根据本发明,可以通过选择性地向栅极绝缘膜施加电场来写入,擦除和读出数据。 因此,薄膜晶体管可以用作存储元件。
    • 5. 发明授权
    • Faulty wiring detection device for air conditioner
    • 空调接线检测装置故障
    • US06777954B2
    • 2004-08-17
    • US10179987
    • 2002-06-26
    • Hiroyasu YamadaShigenobu MochizukiKazuyuki KatayamaKazuhiro Kazama
    • Hiroyasu YamadaShigenobu MochizukiKazuyuki KatayamaKazuhiro Kazama
    • G01R3100
    • G01R31/025
    • An air conditioner includes an air conditioning unit, and three wiring lines for supplying power to the air conditioning unit. The three wiring lines are a pair of single phase AC power lines and an earth line which are to be connected to three source lines. The three source lines are a pair of single phase AC source lines and a ground line. The air conditioner also includes a detection unit including a detecting device that detects voltages between each of the AC power lines and the earth line, a conversion device that converts the voltages detected by the detecting device into logic level signals, a comparator that determines presence or absence of faulty connection between the three wiring lines and the three source lines by comparing the logic level signals obtained by the conversion device with reference logic level signals, and an output device that shows a result of determination made by the comparator.
    • 空调机包括空调单元和用于向空调单元供电的三条布线。 三条线路是要连接到三根源极线的一对单相交流电源线和地线。 三条源极线是一对单相交流电源线和地线。 所述空调还包括检测单元,所述检测单元包括检测每个所述AC电力线和所述接地线之间的电压的检测装置,将由所述检测装置检测出的电压转换为逻辑电平信号的转换装置, 通过将由转换装置获得的逻辑电平信号与参考逻辑电平信号进行比较,在三条布线和三条源极线之间不存在故障连接,以及显示比较器确定结果的输出装置。
    • 10. 发明授权
    • Electrophoretic display device, electronic apparatus, and method of manufacturing electrophoretic display device
    • 电泳显示装置,电子装置及制造电泳显示装置的方法
    • US08941582B2
    • 2015-01-27
    • US12643178
    • 2009-12-21
    • Hiroyasu Yamada
    • Hiroyasu Yamada
    • G09G3/34G02F1/167
    • G02F1/167
    • An electrophoretic display device includes: first and second substrates; an electrophoretic layer which is interposed between the first and second substrates; and a third substrate which is disposed opposite the first substrate with the second substrate interposed therebetween, which is joined to the first substrate with a sealing member interposed therebetween, and which seals the electrophoretic layer with the second substrate interposed therebetween. The first and third substrates have extension sections extending with respect to the second substrate in a plan view. The sealing member fills a part of a gap between the extension section of the first substrate and the extension section of the third substrate, and the sealing member does not come into contact with an outer edge of the third substrate.
    • 电泳显示装置包括:第一和第二基板; 插入在第一和第二基板之间的电泳层; 以及与第一基板相对设置的第三基板,其间插入有第二基板,其间插入有密封构件而与第一基板接合,并且将第二基板夹在其间密封电泳层。 第一和第三基板在平面图中具有相对于第二基板延伸的延伸部分。 密封构件填充第一基板的延伸部分和第三基板的延伸部分之间的间隙的一部分,并且密封构件不与第三基板的外边缘接触。