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    • 2. 发明授权
    • Hard wear-resistant film and method for production thereof
    • 硬质耐磨膜及其制造方法
    • US5366564A
    • 1994-11-22
    • US120735
    • 1993-09-14
    • Hiroshi YamagataAkihisa InoueTsuyoshi Masumoto
    • Hiroshi YamagataAkihisa InoueTsuyoshi Masumoto
    • C23C14/00C23C14/06C23C14/14C23C14/22C23C14/24C23C14/32C23C14/34C22C21/00
    • C23C14/0641C23C14/0021C23C14/14Y10S148/902Y10T428/12764
    • A hard wear-resistant film is formed on a substrate in an atmosphere of an inert gas by using a target of a composition of Al.sub.a Ti.sub.b (wherein "a" and "b" stand for atomic percentages respectively in the ranges of 62 at %.ltoreq.a.ltoreq.85 at % and 15 at %.ltoreq.b.ltoreq.38 at %, providing a+b=100 at %) or Al.sub.c Ta.sub.d (wherein "c" and "d" stand for atomic percentages respectively in the ranges of 60 at %.ltoreq.c.ltoreq.80 at % and 20 at %.ltoreq.d.ltoreq.40 at %, providing c+d=100 at %) and by a sputtering process or ion plating process while varying continuously or stepwise the feed rate of a nitrogen-containing reaction gas into a chamber. The film consequently formed has a composition and structure thereof continuously or stepwise varied from a substantially amorphous metal of a part being in contact with the substrate to an (Al, Ti)N or (Al, Ta)N crystalline ceramic phase with the nitrogen content continuously or stepwise increased in the direction of the surface of the film.
    • 通过使用AlaTib组合物的靶(其中“a”和“b”分别代表62原子%的范围的原子百分比)在惰性气体的气氛中在基底上形成耐硬的耐磨膜, = a%,15 at%,b = 38 at%,提供+ b = 100 at%)或AlcTad(其中“c”和“d”分别表示原子百分比 范围为60at%,%C%= 80 at%,20 at%,d = 40 at%,提供c + d = 100at%),并通过溅射工艺或离子电镀工艺改变 将含氮反应气体的进料速率连续或逐步地进入室。 由此形成的膜的组成和结构从与基板接触的部分的基本非晶态金属连续或逐步变化为具有氮含量的(Al,Ti)N或(Al,Ta)N结晶陶瓷相 在膜的表面方向上连续或逐步增加。
    • 3. 发明授权
    • Highly hard thin film and method for production thereof
    • 高硬度薄膜及其制造方法
    • US5648174A
    • 1997-07-15
    • US420606
    • 1995-04-12
    • Hiroshi YamagataAkihisa InoueTsuyoshi MasumotoJunichi Nagahora
    • Hiroshi YamagataAkihisa InoueTsuyoshi MasumotoJunichi Nagahora
    • C23C14/00C23C14/06C23C14/14C23C14/58
    • C23C14/5806C23C14/0042C23C14/06C23C14/0688C23C14/14C23C14/58C23C14/584Y10T428/24942Y10T428/25Y10T428/31678
    • A hard thin film having fine crystalline ceramic particles dispersed in a metallic matrix phase is disclosed. The production of the film is effected by first depositing a substantially amorphous film on a substrate and then heat-treating the deposited film. Deposition of the film on the substrate is carried out by using a source of evaporation having a composition represented by the general formula: Al.sub.a M.sub.b, wherein M stands for at least one element selected from the group consisting of Ti, Ta, V, Cr, Zr, Nb, Mo, Hf, W, Mn, Fe, Co, Ni, and Cu and "a" and "b" respectively stand for atomic % in the ranges of 60.ltoreq.a.ltoreq.98.5 and 1.5.ltoreq.b.ltoreq.40, providing a+b=100. Deposition is effected by a physical vapor deposition process in an atmosphere of an inert gas containing a reaction gas while controlling the feed rate of the reaction gas into a chamber in such a manner that the partial pressure of the react/on gas is kept constant or varied continuously or stepwise. By this method, there can be obtained a hard composite film having fine ceramic particles dispersed in a metallic matrix phase or a dense, hard, and composite film having a composition and structure obliquely varied from a substantially crystalline metallic phase to a crystalline ceramic phase in the direction of thickness of the film.
    • 公开了一种具有分散在金属基体相中的细晶体陶瓷颗粒的硬质薄膜。 通过首先在基板上沉积基本上非晶的膜然后对沉积的膜进行热处理来实现膜的制备。 通过使用具有由通式AlaMb表示的组成的蒸发源进行膜的沉积,其中M表示选自Ti,Ta,V,Cr,Zr中的至少一种元素 ,Nb,Mo,Hf,W,Mn,Fe,Co,Ni和Cu,“a”和“b”分别表示60≤a≤98.5的范围内的原子% b = 40,提供+ b = 100。 通过在包含反应气体的惰性气体的气氛中的物理气相沉积工艺进行沉积,同时将反应气体的进料速率控制在室内,使得反应/导入气体的分压保持恒定,或 连续或逐步变化。 通过该方法,可以获得具有分散在金属基体相中的细微陶瓷颗粒的硬质复合膜或致密的,硬的和复合的膜,其具有从基本上结晶的金属相到结晶陶瓷相倾斜变化的组成和结构 膜的厚度方向。
    • 5. 发明授权
    • High strength and high rigidity aluminum-based alloy
    • 高强度高刚性铝基合金
    • US06017403A
    • 2000-01-25
    • US601949
    • 1996-02-15
    • Tsuyoshi MasumotoAkihisa InoueYuma Horio
    • Tsuyoshi MasumotoAkihisa InoueYuma Horio
    • C22C21/00
    • C22C21/00
    • An aluminum-based alloy having the general formula Al.sub.x L.sub.y M.sub.z (wherein L is Mn or Cr; M is Ni, Co, and/or Cu; and x, y, and z, representing a composition ratio in atomic percentages, satisfy the relationships x+y+z=100, 75.ltoreq.x.ltoreq.95, 2.ltoreq.y.ltoreq.15, and 0.5.ltoreq.z.ltoreq.10) having a metallographic structure comprising a quasi-crystalline phase possesses high strength and high rigidity. In order to enhance the ductility and toughness of the aluminum-based alloy, the atomic percentage of M may be further limited to 0.5.ltoreq.z.ltoreq.4, and more preferably to 0.5.ltoreq.z.ltoreq.3. The aluminum-based alloy is useful as a structural material for aircraft, vehicles and ships, and for engine parts; as material for sashes, roofing materials, and exterior materials for use in construction; or as materials for use in marine equipment, nuclear reactors, and the like.
    • 具有通式AlxLyMz(其中L是Mn或Cr; M是Ni,Co和/或Cu;和表示原子百分比的组成比的x,y和z)的铝基合金满足关系x + 具有包含准结晶相的金相组织的y + z = 100,75,或者= x,y = x,z = 100,75
    • 10. 发明授权
    • Sacrificial electrode material for corrosion prevention
    • 用于防腐的牺牲电极材料
    • US5423969A
    • 1995-06-13
    • US217009
    • 1994-03-23
    • Tsuyoshi MasumotoAkihisa InoueTakashi SakumaToshisuke Shibata
    • Tsuyoshi MasumotoAkihisa InoueTakashi SakumaToshisuke Shibata
    • C22C23/00C22C45/00C23F13/00C23F13/14C25B11/04
    • C23F13/14
    • The present invention provides a sacrificial electrode material which consists of a single phase amorphous structure or a structure consisting of an amorphous phase and a crystalline solid solution phase and provides electrochemical corrosion protection to metallic articles exposed to an aqueous electrolytic solution. The electrode material is prepared by rapidly quenching a magnesium-based alloy material from the liquid phase or vapor phase thereof, the magnesium-based alloy material consisting the general formula: Mg.sub.bal X1.sub.a X2.sub.b or Mg.sub.bal X1.sub.a, wherein X1 is at least one element selected from the group consisting of Al, Zn, Ga, Ca and In; X2 is at least one element selected from the group consisting of Mm (misch metal), Y and rare earth metal elements; a and b are, in atomic percentages, 5.0.ltoreq.a.ltoreq.35.0 and 3.0.ltoreq.b.ltoreq.25.0, respectively. The magnesium-based alloy material may further contain one or more transition metal elements in their total contents not exceeding 1.0 atomic %.
    • 本发明提供一种牺牲电极材料,其由单相无定形结构或由非晶相和结晶固溶体相组成的结构组成,并且对暴露于水性电解液的金属制品提供电化学腐蚀保护。 通过从其液相或气相快速淬火镁基合金材料制备电极材料,镁基合金材料由以下通式组成:MgbalX1aX2b或MgbalX1a,其中X1是选自以下的至少一种元素: 的Al,Zn,Ga,Ca和In; X2是选自由Mm(混合稀土金属),Y和稀土金属元素组成的组中的至少一种元素; a和b分别为原子百分比为5.0