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1. 发明授权

US07215576B2 Nonvolatile semiconductor memory device which erases data in units of one block including a number of memory cells, and data erasing method of the nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件，其以包含多个存储单元的一个块为单位擦除数据，以及非易失性半导体存储器件的数据擦除方法
公开(公告)号：US07215576B2
公开(公告)日：2007-05-08
申请号：US11213889
申请日：2005-08-30
申请人： Hiroshi Watanabe , Hideo Kato , Takamichi Kasai , Kiyomi Naruke , Hiroyuki Sasaki
发明人： Hiroshi Watanabe , Hideo Kato , Takamichi Kasai , Kiyomi Naruke , Hiroyuki Sasaki
IPC分类号： G11C11/34 , G11C16/06 , G11C16/04
CPC分类号： G11C16/3404
摘要： In a data erasing method of a nonvolatile semiconductor memory device, cells are subjected to the processings of executing programming by applying a voltage to the cells to set their threshold values at a given level or more, erasing the cells to set their threshold values at a lower level or less, executing weak programming once on a cell whose threshold value is lower than a further lower level, by applying a lower voltage to the cell, repeating the weak programming on the cell when its threshold value is still lower than the further lower level, until the value reaches the further lower level or more, verifying whether a cell is present whose threshold value is higher than the lower level, and returning the processing to the processing of setting the threshold values of the cells at the lower level or less, when verifying that the above cell is present.
摘要翻译：在非易失性半导体存储器件的数据擦除方法中，通过向单元施加电压来对单元进行执行编程的处理，以将它们的阈值设置在给定等级或更多的值，擦除单元以将其阈值设置在较低级别或更低级别，通过对小区施加较低的电压，在阈值低于更低级别的小区上执行弱编程一次，当其阈值仍然低于另一较低级别时，对小区重复弱编程级，直到该值达到更低级别或更高级别，验证阈值是否高于较低级别的单元存在，并且将该处理返回到将小区的阈值设置为较低级别或更低级别的处理，当验证上述单元格是否存在时。

2. 发明申请

US20060067132A1 Nonvolatile semiconductor memory device which erases data in units of one block including a number of memory cells, and data erasing method of the nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件，其以包含多个存储单元的一个块为单位擦除数据，以及非易失性半导体存储器件的数据擦除方法
公开(公告)号：US20060067132A1
公开(公告)日：2006-03-30
申请号：US11213889
申请日：2005-08-30
申请人： Hiroshi Watanabe , Hideo Kato , Takamichi Kasai , Kiyomi Naruke , Hiroyuki Sasaki
发明人： Hiroshi Watanabe , Hideo Kato , Takamichi Kasai , Kiyomi Naruke , Hiroyuki Sasaki
IPC分类号： G11C16/04
CPC分类号： G11C16/3404
摘要： In a data erasing method of a nonvolatile semiconductor memory device, cells are subjected to the processings of executing programming by applying a voltage to the cells to set their threshold values at a given level or more, erasing the cells to set their threshold values at a lower level or less, executing weak programming once on a cell whose threshold value is lower than a further lower level, by applying a lower voltage to the cell, repeating the weak programming on the cell when its threshold value is still lower than the further lower level, until the value reaches the further lower level or more, verifying whether a cell is present whose threshold value is higher than the lower level, and returning the processing to the processing of setting the threshold values of the cells at the lower level or less, when verifying that the above cell is present.
摘要翻译：在非易失性半导体存储器件的数据擦除方法中，通过向单元施加电压来对单元进行执行编程的处理，以将它们的阈值设置在给定等级或更多的值，擦除单元以将其阈值设置在较低级别或更低级别，通过对小区施加较低的电压，在阈值低于更低级别的小区上执行弱编程一次，当其阈值仍然低于另一较低级别时，对小区重复弱编程级，直到该值达到更低级别或更高级别，验证阈值是否高于较低级别的单元存在，并且将该处理返回到将小区的阈值设置为较低级别或更低级别的处理，当验证上述单元格是否存在时。

3. 发明申请

US20060227621A1 Nonvolatile semiconductor memory including redundant cell for replacing defective cell 有权
标题翻译：非易失性半导体存储器，包括用于替换有缺陷的单元的冗余单元
公开(公告)号：US20060227621A1
公开(公告)日：2006-10-12
申请号：US11401418
申请日：2006-04-11
申请人： Takamichi Kasai , Hideo Kato
发明人： Takamichi Kasai , Hideo Kato
IPC分类号： G11C16/04
CPC分类号： G11C29/838 , G11C16/04 , G11C29/52 , G11C29/76
摘要： A nonvolatile semiconductor memory includes a cell array, redundancy array, erase circuit, timer, and controller. The cell array has a plurality of memory cells. The redundancy array has a plurality of redundant cells capable of replacing the memory cell. The erase circuit performs an erase operation on a target cell including the memory cell or the redundant cell. The timer measures the time elapsed from the start of the erase operation performed for the target cell by the erase circuit. The controller stops the erase operation and replaces the target cell with the redundant cell, when detecting that a predetermined time has elapsed from the start of the erase operation by the measurement of the elapsed time by the timer.
摘要翻译：非易失性半导体存储器包括单元阵列，冗余阵列，擦除电路，定时器和控制器。单元阵列具有多个存储单元。冗余阵列具有能够替换存储单元的多个冗余单元。擦除电路对包括存储单元或冗余单元的目标单元执行擦除操作。定时器测量从擦除电路开始对目标单元执行的擦除操作所经过的时间。当通过定时器测量经过的时间检测到从擦除操作开始经过了预定时间时，控制器停止擦除操作并且用冗余单元替换目标单元。

4. 发明授权

US07379331B2 Nonvolatile semiconductor memory including redundant cell for replacing defective cell 有权
标题翻译：非易失性半导体存储器，包括用于替换有缺陷的单元的冗余单元
公开(公告)号：US07379331B2
公开(公告)日：2008-05-27
申请号：US11401418
申请日：2006-04-11
申请人： Takamichi Kasai , Hideo Kato
发明人： Takamichi Kasai , Hideo Kato
IPC分类号： G11C11/34
CPC分类号： G11C29/838 , G11C16/04 , G11C29/52 , G11C29/76
摘要： A nonvolatile semiconductor memory includes a cell array, redundancy array, erase circuit, timer, and controller. The cell array has a plurality of memory cells. The redundancy array has a plurality of redundant cells capable of replacing the memory cell. The erase circuit performs an erase operation on a target cell including the memory cell or the redundant cell. The timer measures the time elapsed from the start of the erase operation performed for the target cell by the erase circuit. The controller stops the erase operation and replaces the target cell with the redundant cell, when detecting that a predetermined time has elapsed from the start of the erase operation by the measurement of the elapsed time by the timer.
摘要翻译：非易失性半导体存储器包括单元阵列，冗余阵列，擦除电路，定时器和控制器。单元阵列具有多个存储单元。冗余阵列具有能够替换存储单元的多个冗余单元。擦除电路对包括存储单元或冗余单元的目标单元执行擦除操作。定时器测量从擦除电路开始对目标单元执行的擦除操作所经过的时间。当通过定时器测量经过的时间检测到从擦除操作开始经过了预定时间时，控制器停止擦除操作并用冗余单元替换目标单元。

5. 发明授权

US06452837B2 Nonvolatile semiconductor memory and threshold voltage control method therefor 失效
标题翻译：非易失性半导体存储器及其阈值电压控制方法
公开(公告)号：US06452837B2
公开(公告)日：2002-09-17
申请号：US09745802
申请日：2000-12-26
申请人： Seiichi Mori , Hiroyuki Sasaki , Hideo Kato , Hidetoshi Saito
发明人： Seiichi Mori , Hiroyuki Sasaki , Hideo Kato , Hidetoshi Saito
IPC分类号： G11C1604
CPC分类号： G11C29/028 , G11C16/04 , G11C29/50 , G11C29/50004
摘要： This invention discloses a memory cell threshold voltage shift method effective for the erase or write sequence of a nonvolatile semiconductor memory. First, the threshold voltages VTH of a plurality of memory cells are shifted at once to a range whose upper limit is set to an erase verify voltage VEV. After this, the lower limit of the threshold voltages VTH shifted at once to the range is shifted to a first overerase verify voltage VOEV1 close to the erase verify voltage VEV. Then, the lower limit of the threshold voltages VTH shifted to the first overerase verify voltage VOEV1 to a second overerase verify voltage VOEV2 closer to the erase verify voltage VEV.
摘要翻译：本发明公开了一种对非易失性半导体存储器的擦除或写入顺序有效的存储单元阈值电压偏移方法。首先，多个存储单元的阈值电压VTH一次移动到上限被设定为擦除验证电压VEV的范围。之后，将一度偏移到该范围的阈值电压VTH的下限移动到接近擦除验证电压VEV的第一过电压验证电压VOEV1。然后，将阈值电压VTH的下限移位到第一过电压验证电压VOEV1至接近擦除验证电压VEV的第二过电压验证电压VOEV2。

6. 发明授权

US08649360B2 Wireless base station and signal processing method 有权
标题翻译：无线基站和信号处理方法
公开(公告)号：US08649360B2
公开(公告)日：2014-02-11
申请号：US13094422
申请日：2011-04-26
申请人： Shinichiro Kobayashi , Hideo Kato , Yoshihisa Nakayama
发明人： Shinichiro Kobayashi , Hideo Kato , Yoshihisa Nakayama
IPC分类号： H04W4/00
CPC分类号： H04J13/0003 , H04J13/16 , H04J13/18 , H04L5/0007 , H04L5/001 , H04L5/0014 , H04L5/0021 , H04L27/2601 , H04L27/2626 , H04L27/2633 , H04W72/00 , H04W88/08
摘要： A total of n signal processing circuits respectively constituted by independent circuit blocks process signals at the Data Link and Physical Layers. The signal processing circuits are associated with respective n groups of M/n subcarriers each, to process signals at the Data Link and Physical Layers. For example, the signal processing circuit independently processes signals of the subcarrier group at the Data Link and Physical Layers, the signal processing circuit independently processes signals of the subcarrier group at the Data Link and Physical Layers, and so on. The signal processing circuit independently processes signals of the subcarrier group at the Data Link and Physical Layers.
摘要翻译：分别由独立电路块构成的n个信号处理电路在数据链路和物理层处理信号。信号处理电路分别与各n个M / n个子载波相关联，以处理数据链路和物理层上的信号。例如，信号处理电路独立地处理数据链路和物理层上的子载波组的信号，信号处理电路独立地处理数据链路和物理层等子载波组的信号，等等。信号处理电路独立地处理数据链路和物理层上的子载波组的信号。

7. 发明授权

US08221923B2 Stop method for fuel cell system and fuel cell system 有权
标题翻译：燃料电池系统和燃料电池系统的停止方法
公开(公告)号：US08221923B2
公开(公告)日：2012-07-17
申请号：US11481679
申请日：2006-07-06
申请人： Shigeru Inai , Hiromichi Yoshida , Hideo Kato , Katsumi Hayashi , Ryo Jinba , Nobuyuki Matsumoto , Takahiro Takai , Masao Utsunomiya
发明人： Shigeru Inai , Hiromichi Yoshida , Hideo Kato , Katsumi Hayashi , Ryo Jinba , Nobuyuki Matsumoto , Takahiro Takai , Masao Utsunomiya
IPC分类号： H01M8/04
CPC分类号： H01M8/04231 , B60L11/1881 , B60L11/1885 , B60L11/1888 , B60L11/1892 , B60L11/1896 , H01M8/04097 , H01M2250/20 , Y02T90/32 , Y02T90/34
摘要： A stop method for a fuel cell system including a fuel cell unit in which hydrogen is supplied to an anode, and air is supplied to a cathode so as to generate electrical power via an electrochemical reaction. The stop method includes the steps of stopping supply of hydrogen to the anode, electrically connecting the anode and the cathode via an electrical load, and supplying air to the anode.
摘要翻译：一种用于燃料电池系统的停止方法，该燃料电池系统包括将氢气供应到阳极的燃料电池单元，并且向阴极供应空气以通过电化学反应产生电力。停止方法包括以下步骤：停止向阳极供应氢，通过电负载电连接阳极和阴极，并向阳极供应空气。

8. 发明授权

US08004562B2 Driving support apparatus 失效
标题翻译：驾驶辅助装置
公开(公告)号：US08004562B2
公开(公告)日：2011-08-23
申请号：US11189796
申请日：2005-07-27
申请人： Masayuki Inoue , Hideo Kato , Takanori Ito , Goro Asai , Hideyuki Ide , Yasuhiko Yamamoto , Mitsutoshi Tamari
发明人： Masayuki Inoue , Hideo Kato , Takanori Ito , Goro Asai , Hideyuki Ide , Yasuhiko Yamamoto , Mitsutoshi Tamari
IPC分类号： H04N7/18
CPC分类号： B60Q9/005 , B60Q1/484 , B60R1/00 , B60R2300/302 , B60R2300/305 , B60R2300/802 , B60R2300/8086 , B60R2300/8093 , B62D15/0275 , B62D15/0295 , H04N7/18
摘要： A driving support apparatus includes an imaging member taking an image corresponding to a vehicle peripheral area; a steering angle detecting member detecting a steering-wheel steering angle; a display member disposed in a vehicle interior to display the image; and a control member predicting a driving course of the vehicle according to the detected steering-wheel angle. The control member synthesizes a predicted driving course image relating to the predicted driving course. The control member superposes the predicted driving course image at a corresponding position of the image. The control member displays on the display member the image where at least one image, on which an index is marked at least at one height position, is superposed at least on the predicted driving course image and onto a side of the predicted driving course image while the control member displays the superposed image on the display member.
摘要翻译：驱动支撑装置包括拍摄对应于车辆周边区域的图像的摄像部件; 检测方向盘转向角的转向角检测部件; 布置在车辆内部以显示图像的显示部件; 以及控制构件，根据检测到的方向盘角度来预测车辆的行驶过程。控制构件合成与预测驾驶路线相关的预测行驶路线图像。控制构件将预测的驾驶路线图像叠加在图像的对应位置。控制构件在显示构件上显示其上至少在一个高度位置标记了索引的至少一个图像至少在预测的驾驶路线图像上并且在预测驾驶路线图像的一侧上叠加的图像，同时控制构件在显示构件上显示叠加的图像。

9. 发明申请

US20110139064A1 Graphite Crucible and Silicon Single Crystal Manufacturing Apparatus 有权
标题翻译：石墨坩埚和硅单晶制造装置
公开(公告)号：US20110139064A1
公开(公告)日：2011-06-16
申请号：US12913957
申请日：2010-10-28
申请人： Hideo Kato , Hideaki Murakami , Mikio Suehiro
发明人： Hideo Kato , Hideaki Murakami , Mikio Suehiro
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C30B15/12 , C30B35/002 , Y10T117/1032 , Y10T117/1052
摘要： A graphite crucible for silicon single crystal manufacturing by the Czochralski method, having a long life cycle, contains at least one gas venting hole provided in a corner portion of the crucible. Gas generated by reaction between the graphite crucible and a quartz crucible is released to the outside through the gas venting hole, and formation of SiC on the surface of the graphite crucible and deformation of the quartz crucible caused by the pressure of the generated gas are prevented.
摘要翻译：用于通过切克劳斯基法制造的硅单晶石墨坩埚，具有长寿命周期，在坩埚的角部包含至少一个排气孔。通过石墨坩埚与石英坩埚的反应产生的气体通过排气孔被释放到外部，并且在石墨坩埚的表面上形成SiC，并且防止了由所产生的气体的压力引起的石英坩埚的变形。

10. 发明授权

US07563528B2 Fuel cell system and method of scavenging same 有权
标题翻译：燃料电池系统及其清除方法
公开(公告)号：US07563528B2
公开(公告)日：2009-07-21
申请号：US11071678
申请日：2005-03-02
申请人： Shigeru Inai , Katsumi Hayashi , Hiromichi Yoshida , Hideo Kato , Ryo Jinba , Nobuyuki Matsumoto , Tomoki Kobayashi , Yasunori Kotani , Minoru Uoshima , Yoshikazu Murakami
发明人： Shigeru Inai , Katsumi Hayashi , Hiromichi Yoshida , Hideo Kato , Ryo Jinba , Nobuyuki Matsumoto , Tomoki Kobayashi , Yasunori Kotani , Minoru Uoshima , Yoshikazu Murakami
IPC分类号： H01M8/00 , H01M8/04 , H01M8/12
CPC分类号： H01M8/04231 , H01M8/04126
摘要： A fuel cell system includes a fuel cell, an oxidant gas passage, a cathode off-gas passage, a fuel gas passage, a circulation passage, an anode off-gas passage, a fuel shutoff valve, a supply device, a humidifier and a control device. The supply device supplies a scavenging gas, which is for scavenging the fuel cell, to the anode and the cathode. The humidifier humidifies the scavenging gas. The control device controls the supply device when the fuel cell is turned off so that supply of the fuel gas to the anode is shut off and the scavenging gas is supplied to the anode and the cathode, wherein supply of the scavenging gas to the cathode is conducted through the humidifier.
摘要翻译：燃料电池系统包括燃料电池，氧化剂气体通道，阴极废气通道，燃料气体通道，循环通道，阳极废气通道，燃料截止阀，供应装置，加湿器和控制装置供给装置将用于清除燃料电池的清除气体提供给阳极和阴极。加湿器加湿清除气体。当燃料电池关闭时，控制装置控制供应装置，使得向阳极供应燃料气体被切断，并且清除气体被供应到阳极和阴极，其中向阴极供应清扫气体是通过加湿器进行。

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