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1. 发明授权

US06611060B1 Semiconductor device having a damascene type wiring layer 有权
标题翻译：具有镶嵌型布线层的半导体装置
公开(公告)号：US06611060B1
公开(公告)日：2003-08-26
申请号：US09677743
申请日：2000-10-03
申请人： Hiroshi Toyoda , Hiroyuki Yano , Gaku Minamihaba , Dai Fukushima , Tetsuo Matsuda , Hisashi Kaneko
发明人： Hiroshi Toyoda , Hiroyuki Yano , Gaku Minamihaba , Dai Fukushima , Tetsuo Matsuda , Hisashi Kaneko
IPC分类号： H01L2352
CPC分类号： H01L21/76846 , H01L21/31053 , H01L21/3212 , H01L21/76819 , H01L21/76831 , H01L21/76834 , H01L21/7684 , H01L21/76849 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.
摘要翻译：形成盖膜的方法包括以R1的选择性（=绝缘膜的除去速率/绝缘膜的去除速率）进行抛光操作的第一抛光步骤，以及以选择性进行抛光操作的第二抛光步骤的R2（=盖膜的去除率/绝缘膜的去除率）。通过使用条件为R1> R2的浆料进行每次研磨操作。通过以不同的选择性进行抛光操作，形成了帽膜没有诸如凹陷的盖膜和残留帽膜之间的问题。因此，可以提供具有优异RC特性的半导体器件。

2. 发明授权

US06897143B2 Method of manufacturing semiconductor device including two-step polishing operation for cap metal 失效
标题翻译：制造半导体器件的方法，包括用于金属帽的两步抛光操作
公开(公告)号：US06897143B2
公开(公告)日：2005-05-24
申请号：US10600568
申请日：2003-06-23
申请人： Hiroshi Toyoda , Hiroyuki Yano , Gaku Minamihaba , Dai Fukushima , Tetsuo Matsuda , Hisashi Kaneko
发明人： Hiroshi Toyoda , Hiroyuki Yano , Gaku Minamihaba , Dai Fukushima , Tetsuo Matsuda , Hisashi Kaneko
IPC分类号： H01L21/304 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/76846 , H01L21/31053 , H01L21/3212 , H01L21/76819 , H01L21/76831 , H01L21/76834 , H01L21/7684 , H01L21/76849 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.
摘要翻译：形成盖膜的方法包括以R 1的选择性（=盖膜的去除速率/绝缘膜的去除速率）进行抛光操作的第一抛光步骤，以及进行抛光操作的第二抛光步骤 R 2的选择性（=盖膜的去除率/绝缘膜的去除率）。通过使用条件为R 1> R 2的浆料进行每次研磨操作。通过以不同的选择性进行抛光操作，形成了帽膜没有诸如凹陷的盖膜和残留帽膜之间的问题。因此，可以提供具有优异RC特性的半导体器件。

3. 发明授权

US08778802B2 Polishing method and method for fabricating semiconductor device 有权
标题翻译：抛光方法及制造半导体器件的方法
公开(公告)号：US08778802B2
公开(公告)日：2014-07-15
申请号：US11802532
申请日：2007-05-23
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , B24B37/04 , B24B57/02 , H01L21/02074 , H01L21/31053
摘要： A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while supplying a chemical fluid to a surface of the polishing pad on a fore side of the substrate from an oblique direction with respect to the surface of the polishing pad.
摘要翻译：抛光方法包括：使设置在转台上的抛光垫与转台一起旋转，并且通过使用旋转的抛光垫来抛光衬底的表面，同时在前侧向抛光垫的表面提供化学流体的相对于抛光垫的表面的倾斜方向。

4. 发明申请

US20110062374A1 CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于金属膜的CMP浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US20110062374A1
公开(公告)日：2011-03-17
申请号：US12926358
申请日：2010-11-12
申请人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , H01L22/26
摘要： A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm.
摘要翻译：提供了一种用于金属膜的CMP浆料，其包括基于浆料总量为0.01至0.3重量％的重均分子量不小于20,000的聚乙烯吡咯烷酮，氧化剂，保护膜 - 含有形成水不溶性络合物的第一络合剂和形成水溶性络合物的第二络合剂的成膜剂，以及一次粒径为5〜50nm的胶体二氧化硅。

5. 发明授权

US07465668B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07465668B2
公开(公告)日：2008-12-16
申请号：US11296483
申请日：2005-12-08
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： B24B37/042 , H01L21/3212 , H01L21/7684
摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.
摘要翻译：提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜，在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。

6. 发明授权

US07307023B2 Polishing method of Cu film and method for manufacturing semiconductor device 有权
公开(公告)号：US07307023B2
公开(公告)日：2007-12-11
申请号：US11540707
申请日：2006-10-02
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Susumu Yamamoto
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano , Susumu Yamamoto
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , B24B37/015 , B24B49/16 , B24B57/02 , C09G1/02
摘要： A method for polishing a Cu film comprises contacting a Cu film formed above a semiconductor substrate with a polishing pad attached to a turntable, and supplying a first chemical liquid which promotes the polishing of the Cu film and a second chemical liquid which contains a surfactant, to the polishing pad while the turntable being rotated, thereby polishing the Cu film, while monitoring at least one of a table current of the turntable and a surface temperature of the polishing pad to detect a change in at least one of the table current of the turntable and the surface temperature of the polishing pad. The supply of the second chemical liquid is controlled in conformity with the change.

7. 发明申请

US20060175296A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060175296A1
公开(公告)日：2006-08-10
申请号：US11296483
申请日：2005-12-08
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： C03C15/00 , B44C1/22 , H01L21/302 , C23F1/00
CPC分类号： B24B37/042 , H01L21/3212 , H01L21/7684
摘要： A method for manufacturing a semiconductor device is provided, which includes depositing a conductive film above an insulating film formed above a semiconductor substrate and having a recess, thereby forming a treating film, polishing the treating film while feeding a first chemical solution containing abrasive particles and a second chemical solution containing an oxidizing agent over a polishing pad, the treating film being contacted with the polishing pad at a first load, and subsequent to the polishing, subjecting a surface of the treating film to a chemical-polishing by continuing the feeding of the first chemical solution over the polishing pad while suspending the feeding of the second chemical solution, the treating film being contacted with the polishing pad at a second load which is smaller than the first load.
摘要翻译：提供了一种制造半导体器件的方法，其包括在半导体衬底上形成的绝缘膜上方形成导电膜并具有凹陷，从而形成处理膜，同时在加入含有磨料颗粒的第一化学溶液的同时抛光处理膜，在抛光垫上含有氧化剂的第二化学溶液，所述处理膜在第一次负载下与抛光垫接触，并且在抛光之后，通过继续进行抛光来对处理膜的表面进行化学抛光在悬浮第二化学溶液的进料的同时在抛光垫上方的第一化学溶液，处理膜以小于第一载荷的第二载荷与抛光垫接触。

8. 发明授权

US08174125B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08174125B2
公开(公告)日：2012-05-08
申请号：US12412811
申请日：2009-03-27
申请人： Nobuyuki Kurashima , Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
发明人： Nobuyuki Kurashima , Gaku Minamihaba , Dai Fukushima , Yoshikuni Tateyama , Hiroyuki Yano
IPC分类号： H01L23/48
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.
摘要翻译：半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于电线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹槽并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中，线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。

9. 发明授权

US07833431B2 Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor device 失效
标题翻译：用于CMP的水分散体，用于制造半导体器件的抛光方法和方法
公开(公告)号：US07833431B2
公开(公告)日：2010-11-16
申请号：US11561071
申请日：2006-11-17
申请人： Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： B44C1/22 , H01L21/302 , C09K13/00 , C03C15/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.
摘要翻译：提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。树脂颗粒在表面附近具有范围为10nm至1.65μm的曲率半径的突起。树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

10. 发明授权

US07682975B2 Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US07682975B2
公开(公告)日：2010-03-23
申请号：US11472462
申请日：2006-06-22
申请人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
发明人： Dai Fukushima , Gaku Minamihaba , Hiroyuki Yano
IPC分类号： H01L21/461 , H01L21/4763
CPC分类号： H01L21/76829 , C09G1/02 , H01L21/31053 , H01L21/3212 , H01L21/76802 , H01L21/7684
摘要： A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate.
摘要翻译：一种半导体器件制造方法，包括在衬底的顶表面上形成薄膜; 抛光所述衬底的背面; 并且在后表面的抛光之后，在所述基板的顶表面处形成所述薄膜。

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