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    • 1. 发明授权
    • Flow rate sensor
    • 流量传感器
    • US09026383B2
    • 2015-05-05
    • US13499239
    • 2010-09-24
    • Hiroshi TakakuraShohei YamanoHiroyuki Ebi
    • Hiroshi TakakuraShohei YamanoHiroyuki Ebi
    • G01F1/698G01F1/684
    • G01F1/698G01F1/6847
    • A flow rate sensor is disclosed, comprising a flow rate calculation part that calculates a flow rate of a fluid based on an expression using Xd/Xu that satisfies an expression at least in a certain range of the flow rate when an output of a constant temperature control circuit corresponding to an upstream resistor is defined as Vu, an output of a constant temperature control circuit corresponding to a downstream resistor is defined as Vd, and the flow rate is defined as and the flow rate calculation part corrects the zero point output as being an output when the flow rate is zero by using a zero offset function (OFS) defined as a function of Vu+VdXd/Xu.
    • 公开了一种流量传感器,包括:流量计算部,其基于使用Xd / Xu的表达式计算流体的流量,所述表达在满足表达式时至少在一定的流量范围内,当恒定温度的输出 将与上游电阻对应的控制电路定义为Vu,将与下游电阻对应的恒温控制电路的输出定义为Vd,将流量定义为流量计算部,将零点输出校正为 通过使用定义为Vu + VdXd / Xu的函数的零偏移函数(OFS),流量为零时的输出。
    • 2. 发明申请
    • FLOW RATE SENSOR
    • 流量传感器
    • US20120191381A1
    • 2012-07-26
    • US13499239
    • 2010-09-24
    • Hiroshi TakakuraShohei YamanoHiroyuki Ebi
    • Hiroshi TakakuraShohei YamanoHiroyuki Ebi
    • G06F19/00
    • G01F1/698G01F1/6847
    • A flow rate sensor is disclosed, comprising a flow rate calculation part that calculates a flow rate of a fluid based on an expression using Xd/Xu that satisfies an expression at least in a certain range of the flow rate when an output of a constant temperature control circuit corresponding to an upstream resistor is defined as Vu, an output of a constant temperature control circuit corresponding to a downstream resistor is defined as Vd, and the flow rate is defined as and the flow rate calculation part corrects the zero point output as being an output when the flow rate is zero by using a zero offset function (OFS) defined as a function of Vu+VdXd/Xu.
    • 公开了一种流量传感器,包括:流量计算部,其基于使用Xd / Xu的表达式计算流体的流量,所述表达在满足表达式时至少在一定的流量范围内,当恒定温度的输出 将与上游电阻对应的控制电路定义为Vu,将与下游电阻对应的恒温控制电路的输出定义为Vd,将流量定义为流量计算部,将零点输出校正为 通过使用定义为Vu + VdXd / Xu的函数的零偏移函数(OFS),流量为零时的输出。
    • 3. 发明授权
    • Semiconductor fabrication system, and flow rate correction method and program for semiconductor fabrication system
    • 半导体制造系统,半导体制造系统的流量校正方法和程序
    • US07682843B2
    • 2010-03-23
    • US11817104
    • 2006-06-28
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • H01L21/66
    • G05D7/0658C23C16/455C23C16/45561C23C16/52
    • Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.
    • 基于处理基板时实际发生的热虹吸效应的零点偏移被准确地检测并适当地校正。 半导体制造系统包括用于将气体供给到热处理单元(110)中的气体供给通道(210),MFC(240),用于将用于检测气体供应通道的气体流量的检测单元的输出电压与 与设定的流量对应的设定电压,将气体供给通路的气体流量控制为设定的流量,以及控制单元(300)。 控制单元通过在基板被处理之前至少用于处理基板的气体来替换MFC中的气体,在设置在上游的阀(230,250)的状态下检测来自MFC的输出电压, 关闭MFC的下游并将检测到的输出电压存储在存储单元中,基于来自存储在存储单元中的MFC的输出电压来校正与用于处理衬底的气体的流量对应的设定电压 处理基板的时间,并将校正的设定电压设置在MFC中。
    • 4. 发明授权
    • Thermal type mass flow meter, and thermal type mass flow control device
    • 热式质量流量计,热式质量流量控制装置
    • US08219329B2
    • 2012-07-10
    • US12295037
    • 2007-05-23
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • G01F1/00G01F1/12
    • G01F25/0007G01F1/48G01F1/6847G01F1/6965G05D7/0635
    • A thermal mass flow meter and a thermal mass flow control device addresses a thermal siphon error, even if they are in a compact and inexpensive structure, without using a flow path converting block. A control computing process portion is configured to correct a measurement error caused by thermal siphon by calculating a correction value based on a measurement value at time of depressurizing fluid flow path and flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at time of charging an actual fluid into the flow rate measuring conduit, kind of the actual fluid, pressure at time of charging the actual fluid, and flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output flow value by the stored correction value.
    • 热质量流量计和热质量流量控制装置即使处于紧凑且廉价的结构中也能解决热虹吸误差,而不使用流路转换块。 控制计算处理部分被配置为通过基于在将流体流动路径和流量测量导管减压到大气压或更低时的测量值计算校正值来校正由热虹吸引起的测量误差,测量之间的差异 值和在将实际流体充入流量测量导管时的测量值,实际流体的种类,对实际流体充电时的压力以及在流体流动路径中流动的流体的流量比和流量 测量管道,存储校正值,以及通过存储的校正值校正实际测量的输出流量值。
    • 5. 发明申请
    • THERMAL TYPE MASS FLOW METER, AND THERMAL TYPE MASS FLOW CONTROL DEVICE
    • 热式流量计和热式流量控制装置
    • US20110125445A1
    • 2011-05-26
    • US12295037
    • 2007-05-23
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • G01L27/00
    • G01F25/0007G01F1/48G01F1/6847G01F1/6965G05D7/0635
    • The present invention provides a thermal type mass flow meter and a thermal type mass flow control device which can lower a measurement error caused by an influence of a thermal siphon phenomenon so as to intend to improve a flow rate measurement precision while it is possible to construct a whole compactly and inexpensively with a simple structure, without using any flow path converting block.The present invention has a CPU for correction computing process which works to cancel a measurement error caused by an influence of a thermal siphon phenomenon by calculating a correction value based on a measurement value at a time of depressurizing a fluid flow path in a block and a flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at a time of charging an actual fluid into the flow rate measuring conduit, a kind of the actual fluid, a pressure at a time of charging the actual fluid, and a flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output value by the correction value.
    • 本发明提供一种热式质量流量计和热式质量流量控制装置,其可以降低由热虹吸现象引起的测量误差,从而有助于提高流量测量精度,同时可以构造 整体紧凑且廉价,结构简单,无需任何流路转换块。 本发明具有用于校正计算处理的CPU,其通过基于在块中的流体流路减压时的测量值计算校正值来消除由热虹吸现象的影响引起的测量误差, 流量测量管道到大气压力或更低,测量值与将实际流体充入流量测量管道时的测量值之间的差异,实际流体的种类,充电时的压力 实际流体以及在流体流路和流量测量导管中流动的流体的流量比,存储校正值,并将实际测量的输出值校正校正值。
    • 6. 发明授权
    • Infrared radiation gas analyzer
    • 红外辐射气体分析仪
    • US4501968A
    • 1985-02-26
    • US471455
    • 1983-03-02
    • Hiroyuki EbiKimio Miyatake
    • Hiroyuki EbiKimio Miyatake
    • G01J5/60G01N21/31G01N21/71G01J1/00
    • G01N21/71G01J5/60G01N21/314
    • An infrared radiation gas analyzer for determining the concentration of an ingredient in a sample gas has a sample gas container for containing a sample gas at a temperature at which the ingredient the concentration of which is to be determined will emit infrared radiation in a range characteristic of the ingredient and a window for allowing the infrared radiation to escape from the container. A pair of filters is provided, one of the filters transmitting only radiation in the range and the other of the filters transmitting only radiation in a range near to the firstmentioned range. A disc with the filters thereon rotates in front of the window for passing the filters across the path of radiation escaping from the container. An infrared radiation detector is positioned for receiving the radiation passed by the respective filters and emitting a pulsed signal, which is fed to a comparator for determining the difference between or the ratio of the respective pulses of the signal as an indication of the concentration of the ingredient the concentration of which is to be determined in the sample gas.
    • 用于确定样品气体中成分浓度的红外辐射气体分析仪具有样品气体容器,该样品气体容器用于在其浓度将被确定的成分将发射红外辐射的温度下容纳样品气体, 该成分和允许红外辐射从容器逸出的窗口。 提供一对滤波器,其中一个滤波器仅传输范围内的辐射,另一个滤波器仅在接近第一个范围的范围内仅发射辐射。 其上具有过滤器的盘在窗口的前面旋转,以使过滤器穿过从容器逸出的辐射路径。 定位红外辐射检测器,用于接收由相应滤波器通过的辐射并发射脉冲信号,该脉冲信号被馈送到比较器,用于确定信号的各个脉冲之间的差值或比率,作为 成分的浓度要在样品气体中测定。
    • 7. 发明授权
    • Infrared radiation gas analyzer
    • 红外辐射气体分析仪
    • US4499378A
    • 1985-02-12
    • US473344
    • 1983-03-08
    • Kimio MiyatakeKozo IshidaHiroyuki EbiTakeshi Shimada
    • Kimio MiyatakeKozo IshidaHiroyuki EbiTakeshi Shimada
    • G01N21/31G01N21/35G01N21/71G01J1/00
    • G01N21/71G01N21/3504G01N21/314G01N21/35
    • An infrared radiation gas analyzer for determining the concentration of an ingredient in a sample gas has a sample gas container for containing a sample gas at a temperature at which the ingredient the concentration of which is to be determined will emit infrared radiation in a range characteristic of the ingredient and a window for allowing the infrared radiation to escape from the container. An optical chopper is positioned outside the container for interrupting the radiation escaping from the container. A filter is positioned in the path of the radiation escaping from the container and transmits only radiation in the range. An infrared radiation detector is positioned for receiving the radiation passed by the filter and emitting a signal representative of the radiation received by the detector and which is representative of the concentration of the ingredient the concentration of which is to be determined in the sample gas.
    • 用于确定样品气体中成分浓度的红外辐射气体分析仪具有样品气体容器,该样品气体容器用于在其浓度将被确定的成分将发射红外辐射的温度下容纳样品气体, 该成分和允许红外辐射从容器逸出的窗口。 光学斩波器位于容器外部,用于中断从容器逸出的辐射。 过滤器位于从容器逸出的辐射的路径中,并且仅透射该范围内的辐射。 定位红外辐射检测器用于接收由过滤器通过的辐射,并发出代表由检测器接收的辐射的信号,其代表在样品气体中要确定其浓度的成分的浓度。
    • 8. 发明授权
    • Communication device and auxiliary device for communication
    • 通讯设备及辅助设备进行通讯
    • US06633231B1
    • 2003-10-14
    • US09589017
    • 2000-06-06
    • Kazutaka OkamotoNoboru HayakawaHiroyuki Ebi
    • Kazutaka OkamotoNoboru HayakawaHiroyuki Ebi
    • G08B108
    • H04M1/725G08B25/08H04M2250/12H04N2007/145
    • A surveillance system utilizing a plurality of communication devices that are operative with portable telephones to permit an easily reconfigurable remote surveillance area. The portable telephones can have audio and imaging transmitting functions and at least one has an audio and imaging receiving function. An image sensor can sense images within a predetermined area and is operatively connected to a portable telephone for providing an output signal upon detection of a predetermined amount of change in the image area. An auto-dialing section is connected to a first telephone for calling a second remote telephone automatically based on the output signal. Infrared detecting sensors can also image within the surveillance area and be utilized to activate the auto-dialing function. The portable telephones can further include an image sensor for providing an image of the surveillance area.
    • 一种利用便携式电话操作的多个通信设备的监视系统,以允许易于重新配置的远程监视区域。 便携式电话可以具有音频和图像传输功能,并且至少一个具有音频和成像接收功能。 图像传感器可以感测预定区域内的图像,并且可操作地连接到便携式电话机,以便在检测到图像区域中的预定量的变化时提供输出信号。 自动拨号部分连接到第一电话机,用于根据输出信号自动呼叫第二远程电话机。 红外检测传感器还可以在监控区域内进行成像,并用于激活自动拨号功能。 便携式电话还可以包括用于提供监视区域的图像的图像传感器。
    • 9. 发明申请
    • SEMICONDUCTOR FABRICATION SYSTEM, AND FLOW RATE CORRECTION METHOD AND PROGRAM FOR SEMICONDUCTOR FABRICATION SYSTEM
    • 半导体制造系统和半导体制造系统的流量校正方法和程序
    • US20090061541A1
    • 2009-03-05
    • US11817104
    • 2006-06-28
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • H01L21/66H01L21/306H01L21/30
    • G05D7/0658C23C16/455C23C16/45561C23C16/52
    • Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.
    • 基于处理基板时实际发生的热虹吸效应的零点偏移被准确地检测并适当地校正。 半导体制造系统包括用于将气体供给到热处理单元(110)中的气体供给通道(210),MFC(240),用于将用于检测气体供应通道的气体流量的检测单元的输出电压与 与设定的流量对应的设定电压,将气体供给通路的气体流量控制为设定的流量,以及控制单元(300)。 控制单元通过在基板被处理之前至少用于处理基板的气体来替换MFC中的气体,在设置在上游的阀(230,250)的状态下检测来自MFC的输出电压, 关闭MFC的下游并将检测到的输出电压存储在存储单元中,基于来自存储在存储单元中的MFC的输出电压来校正与用于处理衬底的气体的流量对应的设定电压 处理基板的时间,并将校正的设定电压设置在MFC中。
    • 10. 发明授权
    • CCD sensor incorporating parallel diffusion regions within the output
    • CCD传感器在输出端内并入扩散区域
    • US07015963B2
    • 2006-03-21
    • US10183050
    • 2002-06-27
    • Hiroyuki Ebi
    • Hiroyuki Ebi
    • H04N5/335
    • H01L29/76816G01N27/4148H01L27/14843
    • In a CCD sensor in which electric charges derived from a plurality of detecting elements 2 are outputted from a signal output portion 9, two diffusion portions 22A and 22B are provided in a parallel manner to each other in the signal output portion 9, and electric charges outputted from a designated detecting element 2 are accumulated into one diffusion portions 22A so as to output the accumulated electric charges. Even in such a case that signal levels derived from detecting elements are low, such a CCD sensor capable of performing a high-precision measuring operation is provided, while a dynamic range of the CCD sensor is widened.
    • 在从信号输出部分9输出从多个检测元件2导出的电荷的CCD传感器中,在信号输出部分9中以彼此平行的方式设置两个扩散部分22A和22B,并且 从指定的检测元件2输出的电荷累积到一个扩散部分22A中,以输出累积的电荷。 即使在从检测元件导出的信号电平低的情况下,也能够提供能够进行高精度测量动作的CCD传感器,同时扩大CCD传感器的动态范围。