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    • 1. 发明授权
    • Semiconductor fabrication system, and flow rate correction method and program for semiconductor fabrication system
    • 半导体制造系统,半导体制造系统的流量校正方法和程序
    • US07682843B2
    • 2010-03-23
    • US11817104
    • 2006-06-28
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • H01L21/66
    • G05D7/0658C23C16/455C23C16/45561C23C16/52
    • Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.
    • 基于处理基板时实际发生的热虹吸效应的零点偏移被准确地检测并适当地校正。 半导体制造系统包括用于将气体供给到热处理单元(110)中的气体供给通道(210),MFC(240),用于将用于检测气体供应通道的气体流量的检测单元的输出电压与 与设定的流量对应的设定电压,将气体供给通路的气体流量控制为设定的流量,以及控制单元(300)。 控制单元通过在基板被处理之前至少用于处理基板的气体来替换MFC中的气体,在设置在上游的阀(230,250)的状态下检测来自MFC的输出电压, 关闭MFC的下游并将检测到的输出电压存储在存储单元中,基于来自存储在存储单元中的MFC的输出电压来校正与用于处理衬底的气体的流量对应的设定电压 处理基板的时间,并将校正的设定电压设置在MFC中。
    • 2. 发明申请
    • SEMICONDUCTOR FABRICATION SYSTEM, AND FLOW RATE CORRECTION METHOD AND PROGRAM FOR SEMICONDUCTOR FABRICATION SYSTEM
    • 半导体制造系统和半导体制造系统的流量校正方法和程序
    • US20090061541A1
    • 2009-03-05
    • US11817104
    • 2006-06-28
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • Shuji MoriyaTsuneyuki OkabeHiroyuki EbiTetsuo ShimizuHitoshi Kitagawa
    • H01L21/66H01L21/306H01L21/30
    • G05D7/0658C23C16/455C23C16/45561C23C16/52
    • Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.
    • 基于处理基板时实际发生的热虹吸效应的零点偏移被准确地检测并适当地校正。 半导体制造系统包括用于将气体供给到热处理单元(110)中的气体供给通道(210),MFC(240),用于将用于检测气体供应通道的气体流量的检测单元的输出电压与 与设定的流量对应的设定电压,将气体供给通路的气体流量控制为设定的流量,以及控制单元(300)。 控制单元通过在基板被处理之前至少用于处理基板的气体来替换MFC中的气体,在设置在上游的阀(230,250)的状态下检测来自MFC的输出电压, 关闭MFC的下游并将检测到的输出电压存储在存储单元中,基于来自存储在存储单元中的MFC的输出电压来校正与用于处理衬底的气体的流量对应的设定电压 处理基板的时间,并将校正的设定电压设置在MFC中。
    • 3. 发明授权
    • Thermal type mass flow meter, and thermal type mass flow control device
    • 热式质量流量计,热式质量流量控制装置
    • US08219329B2
    • 2012-07-10
    • US12295037
    • 2007-05-23
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • G01F1/00G01F1/12
    • G01F25/0007G01F1/48G01F1/6847G01F1/6965G05D7/0635
    • A thermal mass flow meter and a thermal mass flow control device addresses a thermal siphon error, even if they are in a compact and inexpensive structure, without using a flow path converting block. A control computing process portion is configured to correct a measurement error caused by thermal siphon by calculating a correction value based on a measurement value at time of depressurizing fluid flow path and flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at time of charging an actual fluid into the flow rate measuring conduit, kind of the actual fluid, pressure at time of charging the actual fluid, and flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output flow value by the stored correction value.
    • 热质量流量计和热质量流量控制装置即使处于紧凑且廉价的结构中也能解决热虹吸误差,而不使用流路转换块。 控制计算处理部分被配置为通过基于在将流体流动路径和流量测量导管减压到大气压或更低时的测量值计算校正值来校正由热虹吸引起的测量误差,测量之间的差异 值和在将实际流体充入流量测量导管时的测量值,实际流体的种类,对实际流体充电时的压力以及在流体流动路径中流动的流体的流量比和流量 测量管道,存储校正值,以及通过存储的校正值校正实际测量的输出流量值。
    • 4. 发明申请
    • THERMAL TYPE MASS FLOW METER, AND THERMAL TYPE MASS FLOW CONTROL DEVICE
    • 热式流量计和热式流量控制装置
    • US20110125445A1
    • 2011-05-26
    • US12295037
    • 2007-05-23
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • Hiroyuki EbiTetsuo ShimizuHitoshi KitagawaShuji MoriyaTsuneyuki Okabe
    • G01L27/00
    • G01F25/0007G01F1/48G01F1/6847G01F1/6965G05D7/0635
    • The present invention provides a thermal type mass flow meter and a thermal type mass flow control device which can lower a measurement error caused by an influence of a thermal siphon phenomenon so as to intend to improve a flow rate measurement precision while it is possible to construct a whole compactly and inexpensively with a simple structure, without using any flow path converting block.The present invention has a CPU for correction computing process which works to cancel a measurement error caused by an influence of a thermal siphon phenomenon by calculating a correction value based on a measurement value at a time of depressurizing a fluid flow path in a block and a flow rate measuring conduit to an atmospheric pressure or less, a difference between the measurement value and a measurement value at a time of charging an actual fluid into the flow rate measuring conduit, a kind of the actual fluid, a pressure at a time of charging the actual fluid, and a flow ratio of the fluid flowing in the fluid flow path and the flow rate measuring conduit, storing the correction value, and correcting an actual measured output value by the correction value.
    • 本发明提供一种热式质量流量计和热式质量流量控制装置,其可以降低由热虹吸现象引起的测量误差,从而有助于提高流量测量精度,同时可以构造 整体紧凑且廉价,结构简单,无需任何流路转换块。 本发明具有用于校正计算处理的CPU,其通过基于在块中的流体流路减压时的测量值计算校正值来消除由热虹吸现象的影响引起的测量误差, 流量测量管道到大气压力或更低,测量值与将实际流体充入流量测量管道时的测量值之间的差异,实际流体的种类,充电时的压力 实际流体以及在流体流路和流量测量导管中流动的流体的流量比,存储校正值,并将实际测量的输出值校正校正值。
    • 5. 发明申请
    • Substrate Processing Device
    • 基板处理装置
    • US20080017105A1
    • 2008-01-24
    • US11579113
    • 2005-06-17
    • Shuji MoriyaTsuneyuki Okabe
    • Shuji MoriyaTsuneyuki Okabe
    • B01J4/00G05D7/06H01L21/205H01L21/3065
    • G05D7/0658B01J4/008
    • Branch piping (18) branches off from the upstream side of opening/closing valves (13d, 14d) provided near the entrance of a processing chamber (11) of a gas supply system for supplying a processing gas, and the branch piping (18) is connected to gas discharge piping (17). In the branch piping (18) are provided a gas flow rate detection mechanism (19) and opening/closing valves (13h, 14h) for switching a flow path between the processing chamber (11) side and the branch piping (18) side. The gas flow rate detection mechanism (19) causes a gas to flow through a resistance body to measure a pressure across the resistance body, detecting a gas flow rate from the pressure difference. Mass flow controllers (13a, 14a) are tested or corrected by the detected value.
    • 分支管道(18)从设置在用于供给处理气体的供气系统的处理室(11)的入口附近的开/关阀(13d,14d)的上游侧分支,以及分支管道 18)连接到排气管道(17)。 在分支管道(18)中设置有用于切换处理室(11)侧和分支配管(18)之间的流路的开/关阀(13h,14h)的气体流量检测机构(19) 侧。 气体流量检测机构(19)使得气体流过电阻体以测量电阻体两端的压力,从压力差检测气体流量。 质量流量控制器(13 a,14 a)通过检测值进行测试或校正。
    • 6. 发明授权
    • Gas supply unit and gas supply system
    • 供气单元和供气系统
    • US08104516B2
    • 2012-01-31
    • US12226416
    • 2006-06-02
    • Shuji MoriyaHideki NagaokaTsuneyuki OkabeHiroshi ItafujiHiroki DoiMinoru Ito
    • Shuji MoriyaHideki NagaokaTsuneyuki OkabeHiroshi ItafujiHiroki DoiMinoru Ito
    • F16K11/10
    • F17D1/04Y10T137/87177Y10T137/87885
    • A gas supply unit and a gas supply system that are small-sized and inexpensive. The gas supply unit is installed on operation gas conveyance pipeline and has fluid control devices communicated via flow path blocks and controlling operation gas. The gas supply unit has the first flow path block, to one side of which an inlet open/close valve included in the fluid control devices is attached, and also has the second flow path block, to one side of which a purge valve included in the fluid control devices is attached. The first flow path block and the second flow path block are layered in the direction perpendicular to the conveyance direction of the operation gas. The inlet open/close valve and the purge valve are arranged between a mass flow controller installed on the operation gas conveyance pipeline and an installation surface where the unit is installed.
    • 气体供给单元和气体供给系统,其尺寸小且便宜。 气体供应单元安装在操作气体输送管道上,并具有通过流路块连接并控制操作气体的流体控制装置。 气体供应单元具有第一流路块,其一侧包括在流体控制装置中的入口打开/关闭阀,并且还具有第二流路块,其一侧包括一个净化阀 流体控制装置被连接。 第一流路块和第二流路块在与操作气体的输送方向垂直的方向上分层。 入口打开/关闭阀和净化阀布置在安装在操作气体输送管线上的质量流量控制器和安装单元的安装表面之间。
    • 8. 发明申请
    • Gas Supply Unit and Gas Supply System
    • 天然气供应单位和供气系统
    • US20090165872A1
    • 2009-07-02
    • US12226416
    • 2006-06-02
    • Shuji MoriyaHideki NagaokaTsuneyuki OkabeHiroshi ItafujiHiroki DoiMinoru Ito
    • Shuji MoriyaHideki NagaokaTsuneyuki OkabeHiroshi ItafujiHiroki DoiMinoru Ito
    • F15C1/06
    • F17D1/04Y10T137/87177Y10T137/87885
    • A gas supply unit and a gas supply system that are small-sized and inexpensive. The gas supply unit is installed on operation gas conveyance pipeline and has fluid control devices communicated via flow path blocks and controlling operation gas. The gas supply unit has the first flow path block, to one side of which an inlet open/close valve included in the fluid control devices is attached, and also has the second flow path block, to one side of which a purge valve included in the fluid control devices is attached. The first flow path block and the second flow path block are layered in the direction perpendicular to the conveyance direction of the operation gas. The inlet open/close valve and the purge valve are arranged between a mass flow controller installed on the operation gas conveyance pipeline and an installation surface where the unit is installed.
    • 气体供给单元和气体供给系统,其尺寸小且便宜。 气体供应单元安装在操作气体输送管道上,并具有通过流路块连接并控制操作气体的流体控制装置。 气体供应单元具有第一流路块,其一侧包括在流体控制装置中的入口打开/关闭阀,并且还具有第二流路块,其一侧包括一个净化阀 流体控制装置被连接。 第一流路块和第二流路块在与操作气体的输送方向垂直的方向上分层。 入口打开/关闭阀和净化阀布置在安装在操作气体输送管线上的质量流量控制器和安装单元的安装表面之间。