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1. 发明授权

US6126753A Single-substrate-processing CVD apparatus and method 失效
标题翻译：单基板处理CVD装置及方法
公开(公告)号：US6126753A
公开(公告)日：2000-10-03
申请号：US310132
申请日：1999-05-12
申请人： Hiroshi Shinriki , Yijun Liu , Masahito Sugiura
发明人： Hiroshi Shinriki , Yijun Liu , Masahito Sugiura
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/405 , C23C16/409 , C23C16/4411 , C23C16/45565 , C23C16/45572 , C23C16/4586
摘要： A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd).sub.2 and Sr(thd).sub.2, and a second process gas containing Ti(O-iPr)(thd).sub.2 or Ti(thd).sub.2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.
摘要翻译：使用单基板处理CVD装置在半导体晶片上形成BST薄膜，同时供给包含Ba（thd）2和Sr（thd）2的混合物的第一工艺气体和含有Ti（ O-iPr）（thd）2或Ti（thd）2。 Ba和Sr的前体比Ti的前体具有更低的活化能和更高的电阻率。第一和第二工艺气体由具有一组第一喷射孔的喷淋头供应，用于喷射第一处理气体和一组用于喷射第二处理气体的第二喷射孔。第二喷射孔组被设计成具有从喷淋区域的中心向外径向逐渐减小的直径，使得以从中心向外径向逐渐减小的喷射速率供给第二处理气体。

2. 发明授权

US06428850B1 Single-substrate-processing CVD method of forming film containing metal element 失效
标题翻译：用于形成含金属元素的单基板处理CVD方法
公开(公告)号：US06428850B1
公开(公告)日：2002-08-06
申请号：US09613694
申请日：2000-07-10
申请人： Hiroshi Shinriki , Yijun Liu , Masahito Sugiura
发明人： Hiroshi Shinriki , Yijun Liu , Masahito Sugiura
IPC分类号： C23C1606
CPC分类号： C23C16/45574 , C23C16/405 , C23C16/409 , C23C16/4411 , C23C16/45565 , C23C16/45572 , C23C16/4586
摘要： A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd)2 and Sr(thd)2, and a second process gas containing Ti(O-iPr)(thd)2 or Ti(thd)2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.
摘要翻译：使用单基板处理CVD装置在半导体晶片上形成BST薄膜，同时供给包含Ba（thd）2和Sr（thd）2的混合物的第一工艺气体和含有Ti（ O-iPr）（thd）2或Ti（thd）2。 Ba和Sr的前体比Ti的前体具有更低的活化能和更高的电阻率。第一和第二工艺气体由具有一组第一喷射孔的喷淋头供应，用于喷射第一处理气体和一组用于喷射第二处理气体的第二喷射孔。第二喷射孔组被设计成具有从喷淋区域的中心向外径向逐渐减小的直径，使得以从中心向外径向逐渐减小的喷射速率供给第二处理气体。

3. 发明申请

US20060081186A1 Single-substrate-heat-processing apparatus for performing reformation and crystallization 审中-公开
标题翻译：用于进行重整和结晶的单基板加热装置
公开(公告)号：US20060081186A1
公开(公告)日：2006-04-20
申请号：US11296225
申请日：2005-12-08
申请人： Hiroshi Shinriki , Masahito Sugiura
发明人： Hiroshi Shinriki , Masahito Sugiura
IPC分类号： C23C16/00
CPC分类号： H01L21/02356 , C23C16/405 , C23C16/44 , C23C16/56 , H01L21/02183 , H01L21/02271 , H01L21/0234 , H01L21/02348 , H01L21/31604 , H01L28/56
摘要： An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.
摘要翻译：在半导体晶片上形成由第一和第二钽氧化物层构成的绝缘膜。首先，通过CVD形成非晶质第一层，并且进行用于除去第一层中所含有机杂质的重整工序。然后，在第一层上通过CVD形成无定形第二层。然后，通过在一定时间内将晶片加热至低于结晶温度的温度，将含有臭氧的工艺气体供给到处理室中，来进行用于除去第二层中所含有机杂质的重整工序。此外，在相同的处理室内，将晶片依次加热至高于结晶温度的第二温度，然后将晶片冷却至低于结晶温度的温度，以使第一和第二层同时结晶。

4. 发明申请

US20050016687A1 Single-substrate-heat-processing apparatus for performing reformation and crystallization 审中-公开
标题翻译：用于进行重整和结晶的单基板加热装置
公开(公告)号：US20050016687A1
公开(公告)日：2005-01-27
申请号：US10913531
申请日：2004-08-09
申请人： Hiroshi Shinriki , Masahito Sugiura
发明人： Hiroshi Shinriki , Masahito Sugiura
IPC分类号： C23C16/44 , C23C16/56 , H01L21/02 , H01L21/316 , C23F1/00
CPC分类号： H01L21/02356 , C23C16/405 , C23C16/44 , C23C16/56 , H01L21/02183 , H01L21/02271 , H01L21/0234 , H01L21/02348 , H01L21/31604 , H01L28/56
摘要： An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.
摘要翻译：在半导体晶片上形成由第一和第二钽氧化物层构成的绝缘膜。首先，通过CVD形成非晶质第一层，并且进行用于除去第一层中所含有机杂质的重整工序。然后，在第一层上通过CVD形成无定形第二层。然后，通过在一定时间内将晶片加热至低于结晶温度的温度，将含有臭氧的工艺气体供给到处理室中，来进行用于除去第二层中所含有机杂质的重整工序。此外，在相同的处理室内，将晶片依次加热至高于结晶温度的第二温度，然后将晶片冷却至低于结晶温度的温度，以使第一和第二层同时结晶。

5. 发明授权

US06467491B1 Processing apparatus and processing method 失效
标题翻译：处理装置及处理方法
公开(公告)号：US06467491B1
公开(公告)日：2002-10-22
申请号：US09631978
申请日：2000-08-03
申请人： Masahito Sugiura , Hiroshi Shinriki , Hideki Kiryu , Shintaro Aoyama
发明人： Masahito Sugiura , Hiroshi Shinriki , Hideki Kiryu , Shintaro Aoyama
IPC分类号： B08B704
CPC分类号： H01L21/67196 , H01L21/67115 , H01L21/681 , Y10S134/902
摘要： A pretreatment chamber 120 is disposed within a vacuum transfer chamber 102 of a processing apparatus 100. The pretreatment chamber 120 is equipped with an orienting mechanism 128 and a UV lamp 124. The orienting mechanism 128 orients a wafer W through rotation of a table 130, on which the wafer W is placed, and by use of an optical sensor 134. Synchronously with the orientation, the UV lamp 124 emits UV through a UV transmission window 126 fitted to a ceiling portion of the pretreatment chamber 120, to thereby irradiate the surface of the wafer W with UV. Thus adhering to the wafer W is removed. A processing gas supplied into the pretreatment chamber 120 is also irradiated with UV. Active atoms generated from the processing gas also contribute to removal of carbon. Since the pretreatment chamber 120 is formed within the vacuum transfer chamber 102, the footprint of the processing apparatus can be reduced. Since orientation of the wafer W and removal of contaminants are performed concurrently, throughput is improved.
摘要翻译：预处理室120设置在处理设备100的真空转移室102内。预处理室120配备有定向机构128和UV灯124.定向机构128通过台130的旋转定向晶片W，在其上放置晶片W，并且通过使用光学传感器134.与该取向同步，UV灯124通过装配到预处理室120的顶部的UV透射窗口126发射UV，从而照射表面的晶片W。因此，除去了附着在晶片W上。供给到预处理室120的处理气体也用UV照射。从处理气体产生的活性原子也有助于去除碳。由于预处理室120形成在真空传送室102内，因此能够减少处理装置的占地面积。由于晶片W的取向和污染物的去除同时进行，因此提高了生产率。

6. 发明授权

US07037560B1 Film forming method, and film modifying method 失效
标题翻译：成膜方法和膜改性方法
公开(公告)号：US07037560B1
公开(公告)日：2006-05-02
申请号：US09617254
申请日：2000-07-14
申请人： Hiroshi Shinriki , Masahito Sugiura
发明人： Hiroshi Shinriki , Masahito Sugiura
IPC分类号： B05D3/06 , B05D3/04 , C23C16/40 , C23C16/48 , C23C16/56
CPC分类号： C23C16/45565 , C23C16/405 , C23C16/4411 , C23C16/45514 , C23C16/45563 , C23C16/45574 , C23C16/4586 , C23C16/482 , C23C16/54
摘要： A film forming and film modifying method utilizing a film forming apparatus which has an alcohol supply unit to form a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist. The film modifying method irradiates a UV ray on ozone to generate active oxygen atoms, thus modifying the metal oxide film by exposing the metal oxide film to the active oxygen atoms in a vacuum atmosphere.
摘要翻译：一种利用成膜装置的成膜和膜修饰方法，该成膜装置具有在其中存在蒸发的金属氧化物膜材料和蒸发的醇的真空气氛中在半导体晶片上形成金属氧化物膜的醇供应单元。该膜改性方法对臭氧照射紫外线以产生活性氧原子，从而通过在真空气氛中将金属氧化物膜暴露于活性氧原子来修饰金属氧化物膜。

7. 发明授权

US06232248B1 Single-substrate-heat-processing method for performing reformation and crystallization 失效
标题翻译：用于进行改性和结晶的单基板热处理方法
公开(公告)号：US06232248B1
公开(公告)日：2001-05-15
申请号：US09335526
申请日：1999-06-18
申请人： Hiroshi Shinriki , Masahito Sugiura
发明人： Hiroshi Shinriki , Masahito Sugiura
IPC分类号： H01L2131
CPC分类号： C23C16/405 , C23C16/44 , C23C16/56 , H01L21/31604 , H01L28/56
摘要： An insulating film consisting of first and second tantalum oxide layers is formed on a semiconductor wafer. First, an amorphous first layer is formed by CVD, and a reforming process for removing organic impurities contained in the first layer is carried out. Then, an amorphous second layer is formed by CVD on the first layer. Then, a reforming process for removing organic impurities contained in the second layer is carried out by supplying a process gas containing ozone into a process chamber while heating the wafer to a temperature lower than a crystallizing temperature over a certain period. Further, within the same process chamber, the wafer is successively heated to a second temperature higher than the crystallizing temperature, followed by cooling the wafer to a temperature lower than the crystallizing temperature so as to crystallize the first and second layers simultaneously.
摘要翻译：在半导体晶片上形成由第一和第二钽氧化物层构成的绝缘膜。首先，通过CVD形成非晶质第一层，并且进行用于除去第一层中所含有机杂质的重整工序。然后，在第一层上通过CVD形成无定形第二层。然后，通过在一定时间内将晶片加热至低于结晶温度的温度，将含有臭氧的工艺气体供给到处理室中，来进行用于除去第二层中所含有机杂质的重整工序。此外，在相同的处理室内，将晶片依次加热至高于结晶温度的第二温度，然后将晶片冷却至低于结晶温度的温度，以使第一和第二层同时结晶。

8. 发明授权

US6143081A Film forming apparatus and method, and film modifying apparatus and method 失效
标题翻译：成膜装置及方法以及膜改型装置及方法
公开(公告)号：US6143081A
公开(公告)日：2000-11-07
申请号：US889590
申请日：1997-07-08
申请人： Hiroshi Shinriki , Masahito Sugiura
发明人： Hiroshi Shinriki , Masahito Sugiura
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/405 , C23C16/4411 , C23C16/45514 , C23C16/45563 , C23C16/45574 , C23C16/4586 , C23C16/482 , C23C16/54
摘要： A film forming/modifying system includes a film forming apparatus which has an alcohol supply unit and forms a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist, a film modifying apparatus which has a UV irradiation unit for irradiating a UV ray on ozone to generate active oxygen atoms, and modifies the metal oxide film by exposing the metal oxide film to the active oxygen atoms in a vacuum atmosphere, and a common transfer chamber commonly coupled to the film forming apparatus and the film modifying apparatus to transfer the target process object between the film forming apparatus and the film modifying apparatus while maintaining the vacuum state.
摘要翻译：成膜/修饰系统包括：成膜装置，其具有醇供应单元，并且在存在蒸发的金属氧化物膜材料和蒸发的醇的真空气氛中在半导体晶片上形成金属氧化物膜，具有用于对臭氧照射紫外线以产生活性氧原子的UV照射单元，并且通过在真空气氛中将金属氧化物膜暴露于活性氧原子来修饰金属氧化物膜，以及通常耦合到膜的公共转移室成膜装置和薄膜修改装置，以在保持真空状态的同时在成膜装置和薄膜修改装置之间转移目标处理对象。

9. 发明申请

US20090246373A1 METHOD OF FORMING METALLIC FILM AND PROGRAM-STORING RECORDING MEDIUM 审中-公开
标题翻译：形成金属膜和程序存储记录介质的方法
公开(公告)号：US20090246373A1
公开(公告)日：2009-10-01
申请号：US12063517
申请日：2006-07-06
申请人： Mitsuhiro Tachibana , Masahito Sugiura , Takashi Nishimori , Kohichi Satoh
发明人： Mitsuhiro Tachibana , Masahito Sugiura , Takashi Nishimori , Kohichi Satoh
IPC分类号： C23C16/06 , G05B13/02
CPC分类号： C23C16/14 , C23C16/45523 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A metal film with a lowered resistance by controlling a crystal structure. A tungsten film is formed through a first tungsten film formation in which a first tungsten film with amorphous content is formed by alternately executing multiple times a supplying a metal base material gas such as WF6 gas and supplying a hydrogen compound gas such as SiH4 gas, with a purge executed between the two gas supply by supplying an inert gas such as Ar gas or N2 gas and a second tungsten film formation in which a second tungsten film is formed by simultaneously supplying the WF6 gas and a reducing gas such as H2 gas onto the first tungsten film. The amorphous content in the first tungsten film is controlled by adjusting the length of time over which the purge is executed following the SiH4 gas supply.
摘要翻译：通过控制晶体结构，具有降低的电阻的金属膜。通过第一钨膜形成钨膜，其中通过交替执行多次提供诸如WF 6气体的金属基材气体并且将诸如SiH 4气体的氢化合物气体供应到第一钨膜，形成具有无定形含量的第一钨膜，通过供给诸如Ar气体或N 2气体的惰性气体在两个气体供给之间执行的清洗以及通过同时将WF 6气体和诸如H 2气体的还原气体同时供给到第二钨膜形成的第二钨膜形成物第一钨膜。通过调节在SiH 4气体供应之后进行吹扫的时间长度来控制第一钨膜中的无定形含量。

10. 发明申请

US20090045517A1 METHOD FOR FORMING TUNGSTEN FILM, FILM-FORMING APPARATUS, STORAGE MEDIUM AND SEMICONDUCTOR DEVICE 有权
标题翻译：形成金属膜，成膜装置，储存介质和半导体器件的方法
公开(公告)号：US20090045517A1
公开(公告)日：2009-02-19
申请号：US11994339
申请日：2006-06-23
申请人： Masahito Sugiura , Yasutaka Mizoguchi , Yasushi Aiba
发明人： Masahito Sugiura , Yasutaka Mizoguchi , Yasushi Aiba
IPC分类号： H01L23/52 , C23C16/44 , H01L21/44
CPC分类号： C23C16/14 , C23C16/45527 , H01L21/28562 , H01L21/76856 , H01L21/76876 , H01L21/76877
摘要： A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed.The tungsten film is formed through a process in which a silicon-containing gas is delivered to a wafer M placed within a processing container 14 and a process executed after the silicon-containing gas supply process, in which a first tungsten film 70 is formed by alternately executing multiple times, a tungsten-containing gas supply step for supplying a tungsten-containing gas and a hydrogen compound gas supply step for supplying a hydrogen compound gas with no silicon content with a purge step in which an inert gas is supplied into the processing container and/or an evacuation step for evacuating the processing container executed between the tungsten-containing gas supply step and the hydrogen compound gas supply step.
摘要翻译：形成了与通过现有技术中形成的钨膜相比，具有比其阻挡层更低的电阻率和较低的氟浓度的钨膜，其与通过相关技术形成的钨膜相比，以高可靠性粘附到阻挡层。通过将含硅气体输送到放置在处理容器14内的晶片M和在含硅气体供给工序之后进行的工序，形成钨膜，其中第一钨膜70由交替执行多次，用于提供含钨气体的含钨气体供给步骤和用于向不加入硅的氢化合物气体供给氢化合物气体的氢化合物气体供给步骤，其中向所述处理中供给惰性气体的净化步骤容器和/或排气步骤，用于抽空在含钨气体供给步骤和氢气复合气体供给步骤之间执行的处理容器。

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