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1. 发明授权

US5418512A Superconducting magnetic shield 失效
标题翻译：超导磁屏蔽
公开(公告)号：US5418512A
公开(公告)日：1995-05-23
申请号：US987819
申请日：1992-12-09
申请人： Hiroshi Ohta , Masakazu Aono , Kazuhiko Kato , Kazutomo Hoshino , Hidefusa Takahara , Tomonobu Nakayama , Eiichi Sudoh
发明人： Hiroshi Ohta , Masakazu Aono , Kazuhiko Kato , Kazutomo Hoshino , Hidefusa Takahara , Tomonobu Nakayama , Eiichi Sudoh
IPC分类号： H05K9/00 , H01F1/00 , H01B12/00
CPC分类号： H05K9/0077 , Y10S505/782 , Y10S505/845
摘要： This invention provides a superconducting magnetic shield and a magnetic shielding apparatus including the same, thereby accurately measuring an extremely weak magnetic field such an magnetoencephalographic waves by reducing the influence of magnetic field of the earth or magnetic noises.
摘要翻译：本发明提供了一种超导磁屏蔽和包括该超导磁屏蔽的磁屏蔽装置，从而通过减少地球的磁场或磁性噪声的影响来精确地测量诸如磁脑的非常弱的磁场。

2. 发明授权

US5187327A Superconducting magnetic shield 失效
标题翻译：超导磁屏蔽
公开(公告)号：US5187327A
公开(公告)日：1993-02-16
申请号：US588337
申请日：1990-09-26
申请人： Hiroshi Ohta , Masakazu Aono , Kazuhiko Kato , Kazutomo Hoshino , Hidefusa Takahara , Tomonobu Nakayama , Eiichi Sudoh
发明人： Hiroshi Ohta , Masakazu Aono , Kazuhiko Kato , Kazutomo Hoshino , Hidefusa Takahara , Tomonobu Nakayama , Eiichi Sudoh
IPC分类号： H05K9/00
CPC分类号： H05K9/0077 , Y10S505/782 , Y10S505/845
摘要： This invention provides a superconducting magnetic shield and a magnetic shielding apparatus including the same, thereby accurately measuring an extremely weak magnetic field such as magnetoencephalographic waves by reducing the influence of magnetic field of the earth or magnetic noises.

3. 发明授权

US08193499B2 Surface enhanced infrared absorption sensor and method for producing the same 失效
标题翻译：表面增强红外吸收传感器及其制造方法
公开(公告)号：US08193499B2
公开(公告)日：2012-06-05
申请号：US12676723
申请日：2008-09-05
申请人： Tadaaki Nagao , Dominik Enders , Tomonobu Nakayama , Masakazu Aono
发明人： Tadaaki Nagao , Dominik Enders , Tomonobu Nakayama , Masakazu Aono
IPC分类号： G01J5/58
CPC分类号： G01N21/35 , B82Y15/00 , B82Y40/00 , G01N21/553 , G01N21/554 , G01N21/658 , Y10T428/24612
摘要： The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.
摘要翻译：本发明的表面增强红外吸收传感器的制造方法的特征在于，将分散在溶液中的金属纳米粒子吸附在基板的表面上，或者使吸附的金属纳米粒子在溶液中生长，从而形成膜; 从与设置有金属纳米薄膜的一侧相反的一侧向基板施加红外光; 检测从衬底渗出的ev逝波; 并且在原位监测表面增强的红外吸收信号的同时调节表面增强的红外吸收活性，由此金属纳米薄膜以扁平和不连续岛的形式生长。根据该方法，提供了一种具有更高灵敏度和更优异的再现性的表面增强红外吸收（SEIRA）传感器的生产技术。

4. 发明申请

US20050242283A1 Scanning probe microscope and specimen surface structure measuring method 失效
标题翻译：扫描探针显微镜和样品表面结构测量方法
公开(公告)号：US20050242283A1
公开(公告)日：2005-11-03
申请号：US10503701
申请日：2003-02-05
申请人： Tsuyoshi Hasegawa , Masakazu Aono , Tomonobu Nakayama , Sumio Hosaka
发明人： Tsuyoshi Hasegawa , Masakazu Aono , Tomonobu Nakayama , Sumio Hosaka
IPC分类号： G01B21/30 , G01Q10/04 , G01Q10/06 , G01Q20/02 , G01Q60/24 , G01Q60/32 , G01Q60/38 , G01Q70/12 , G01N23/00
CPC分类号： G01Q60/34 , G01Q10/06 , G01Q30/04 , G01Q70/12
摘要： A digital probing type atomic force microscope (AFM) for measuring high aspect structures with high precision. A probe 21 is vibrated while moved to the vicinity of an atomic force region on a specimen surface. The position of the probe is measured when a specified atomic force is detected in the atomic force region. The probe is then moved away from the specimen surface. A servo system for maintaining a gap between the probe and specimen surface is stopped. The probe is moved to a measurement point along the specimen surface while kept away from the specimen. The vibration frequency is a frequency slightly offset from the cantilever resonance point. The atomic force is detected based on the vibration amplitude of the cantilever.
摘要翻译：数字探测型原子力显微镜（AFM），用于高精度测量高端面结构。探针21在移动到试样表面的原子力区域附近时振动。当在原子力区域中检测到指定的原子力时，测量探针的位置。然后将探头从样品表面移开。停止用于保持探针和试样表面之间的间隙的伺服系统。探头沿着试样表面移动到测量点，同时远离试样。振动频率是与悬臂共振点稍微偏移的频率。基于悬臂振动幅度检测原子力。

5. 发明申请

US20050127524A1 Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device 有权
公开(公告)号：US20050127524A1
公开(公告)日：2005-06-16
申请号：US10512571
申请日：2003-04-25
申请人： Toshitsugu Sakamoto , Masakazu Aono , Tsuyoshi Hasegawa , Tomonobu Nakayama , Hiroshi Sunamura , Hisao Kawaura , Naohiko Sugibayashi
发明人： Toshitsugu Sakamoto , Masakazu Aono , Tsuyoshi Hasegawa , Tomonobu Nakayama , Hiroshi Sunamura , Hisao Kawaura , Naohiko Sugibayashi
IPC分类号： G11C13/02 , H01L27/10 , H01L45/00 , H01L21/8238 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： G11C13/0011 , G11C2213/15 , G11C2213/56 , G11C2213/79 , H01L27/101 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/142 , H01L45/144 , H01L45/1633 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same. A solid electrolyte switching device (10, 10′, 20, 20′) comprises a substrate (11) in which surface is coated with an insulation layer, a first interconnection layer (13) set on said substrate (11), an ion supplying layer (17) set on said first interconnection layer (13), a solid electrolyte layer (16) set on said ion supplying layer (17), an interlevel insulating layer (12) having a via hole set to cover said first interconnection layer (13), said ion supplying layer (17), and said solid electrolyte layer (16), a counter electrode layer (15) set to contact said solid electrolyte layer (16) through the via hole of said interlevel insulating layer (12), and a second interconnection layer (14) set to cover said counter electrode layer (15). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer (17) and the counter electrode layer (15), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA (30) makes it possible to provide re-programmable and fast operation FPGA (30). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

6. 发明申请

US20050014325A1 Point contact array, not circuit, and electronic circuit comprising the same 有权
标题翻译：点接触阵列，不是电路和包括它的电子电路
公开(公告)号：US20050014325A1
公开(公告)日：2005-01-20
申请号：US10918360
申请日：2004-08-16
申请人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
发明人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
IPC分类号： G11C11/56 , G11C13/02 , G11C16/02 , H01L27/24 , H01L27/28 , H01L29/24 , H01L29/26 , H01L29/45 , H01L51/00 , H01L51/30 , H03K19/02 , H01L21/00
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5614 , G11C13/0004 , G11C13/0009 , G11C13/0011 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L29/242 , H01L29/26 , H01L29/45 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1633 , H03K17/545 , H03K19/02
摘要： A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.
摘要翻译：使用用作双端子器件的原子开关实现的NOT电路，并且包括由具有离子导电性和电子导电性的复合导电材料制成的第一电极和由导电物质制成的第二电极。 Ag2S，Ag2Se，Cu2S或Cu2Se优选用作复合导电材料。

7. 发明申请

US20100239821A1 SURFACE ENHANCED INFRARED ABSORPTION SENSOR AND METHOD FOR PRODUCING THE SAME 失效
标题翻译：表面增强的红外吸收传感器及其制造方法
公开(公告)号：US20100239821A1
公开(公告)日：2010-09-23
申请号：US12676723
申请日：2008-09-05
申请人： Tadaaki Nagao , Dominik Enders , Tomonobu Nakayama , Masakazu Aono
发明人： Tadaaki Nagao , Dominik Enders , Tomonobu Nakayama , Masakazu Aono
IPC分类号： B32B3/10 , C23C16/52
CPC分类号： G01N21/35 , B82Y15/00 , B82Y40/00 , G01N21/553 , G01N21/554 , G01N21/658 , Y10T428/24612
摘要： The method for producing a surface enhanced infrared absorption sensor of the invention is characterized by: adsorbing metallic nanoparticles dispersed in a solution on a surface of a substrate, or allowing the adsorbed metallic nanoparticles to be grown in a solution, thereby forming a film; applying infrared light to the substrate from the side thereof opposite to the side on which the metallic nano-thin film is disposed; detecting evanescent waves exuding from the substrate; and regulating a surface enhanced infrared adsorption activity while monitoring surface enhanced infrared adsorption signals in situ, whereby the metallic nano-thin film is grown in the form of flat and discontinuous islands. According to the method, there is provided a production technique for a surface enhanced infrared absorption (SEIRA) sensor having a higher sensitivity and more excellent in the reproducibility.
摘要翻译：本发明的表面增强红外线吸收传感器的制造方法的特征在于，将分散在溶液中的金属纳米粒子吸附在基板的表面，或使吸附的金属纳米粒子在溶液中生长，从而形成膜; 从与设置有金属纳米薄膜的一侧相反的一侧向基板施加红外光; 检测从衬底渗出的ev逝波; 并且在原位监测表面增强的红外吸收信号的同时调节表面增强的红外吸收活性，由此金属纳米薄膜以扁平和不连续岛的形式生长。根据该方法，提供了一种具有更高灵敏度和更优异的再现性的表面增强红外吸收（SEIRA）传感器的生产技术。

8. 发明申请

US20050243844A1 Point contact array, not circuit, and electronic circuit using the same 有权
标题翻译：点触点阵列，不是电路，而电子电路使用相同
公开(公告)号：US20050243844A1
公开(公告)日：2005-11-03
申请号：US11165037
申请日：2005-06-24
申请人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
发明人： Masakazu Aono , Tsuyoshi Hasegawa , Kazuya Terabe , Tomonobu Nakayama
IPC分类号： G11C11/56 , G11C13/02 , G11C16/02 , H01L27/24 , H01L27/28 , H01L29/24 , H01L29/26 , H01L29/45 , H01L51/00 , H01L51/30 , H03K19/02 , H04L12/28 , H04L12/56
CPC分类号： G11C13/025 , B82Y10/00 , G11C11/5614 , G11C13/0004 , G11C13/0009 , G11C13/0011 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L29/242 , H01L29/26 , H01L29/45 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/143 , H01L45/146 , H01L45/1633 , H03K17/545 , H03K19/02
摘要： There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0
摘要翻译：提供了一种点接触阵列，其中布置有多个点触点，每个点接触电和可逆地控制电极之间的电导并且可应用于运算电路，逻辑电路和存储器件，NOT电路和使用该电路的电子电路。电路包括多个点接点，每个点接触由由具有离子导电性和电子传导性的复合导电材料制成的第一电极和由导电物质制成的第二电极组成。控制每个点接触的电导以实现电路。优选使用Ag 2 S，Ag 2 Se，Cu 2 S或Cu 2 Se作为化合物导电材料。当在电极之间插入半导体或绝缘体材料时，可以使用GeS x X，Ge x O x Ge，GeTe x x，或优选使用WO x（0

9. 发明授权

US06608306B1 Scanning tunneling microscope, its probe, processing method for the probe and production method for fine structure 失效
标题翻译：扫描隧道显微镜，其探头，探针加工方法及精细结构的生产方法
公开(公告)号：US06608306B1
公开(公告)日：2003-08-19
申请号：US09743202
申请日：2001-01-08
申请人： Masakazu Aono , Tomonobu Nakayama , Kazuya Terabe
发明人： Masakazu Aono , Tomonobu Nakayama , Kazuya Terabe
IPC分类号： G01N1312
CPC分类号： B82B3/00 , G01Q60/16 , Y10S977/861 , Y10S977/869 , Y10S977/875 , Y10S977/879
摘要： The invention provides a probe for use with a scanning tunneling microscope, a method of treating the probe, and a method of fabricating a nano-structure, which facilitates formation of a continuous nano-structure. The probe for the scanning tunneling microscope is formed of an Ag2S crystal having both ion conductivity and electron conductivity. Voltage and tunnel current are applied between the probe and a substrate in order to move movable Ag ions to thereby grow, on the tip end of the probe, a projection (mini chip) composed of Ag ions or Ag atoms. The polarity of the applied voltage is reversed after the growth of the projection in order to return the Ag ions or Ag atoms constituting the grown projection (mini chip) into the Ag2S crystal to thereby contract the projection. Thus, the probe can have a projection composed of Ag ions or Ag atoms and a regulated shape. Further, the movable ions or atoms of the mixed-conductive material are transferred onto the substrate so as to form a nano-structure on the substrate.
摘要翻译：本发明提供了一种用于扫描隧道显微镜的探针，一种处理该探针的方法，以及一种有助于形成连续纳米结构的纳米结构的制造方法。用于扫描隧道显微镜的探针由具有离子传导性和电子传导性的Ag 2 S晶体形成。电压和隧道电流施加在探针和衬底之间，以移动可移动的Ag离子，从而在探针的尖端上生长由Ag离子或Ag原子组成的突起（微型芯片）。在投影生长之后，施加电压的极性反转，以将构成生长的突起（微型芯片）的Ag离子或Ag原子返回到Ag2S晶体中，从而使投影收缩。因此，探针可以具有由Ag离子或Ag原子组成的突起和调节形状。此外，将混合导电材料的可移动离子或原子转移到衬底上，以在衬底上形成纳米结构。

10. 发明授权

US06833719B2 Apparatus for evaluating electrical characteristics 失效
标题翻译：用于评估电气特性的装置
公开(公告)号：US06833719B2
公开(公告)日：2004-12-21
申请号：US10148900
申请日：2002-06-19
申请人： Tsuyoshi Hasegawa , Masakazu Aono , Tomonobu Nakayama , Taichi Okuda , Kazuya Terabe , Hirofumi Tanaka
发明人： Tsuyoshi Hasegawa , Masakazu Aono , Tomonobu Nakayama , Taichi Okuda , Kazuya Terabe , Hirofumi Tanaka
IPC分类号： G01R3102
CPC分类号： G01Q60/40 , G01Q60/04 , G01R1/06727 , G01R1/06738 , Y10S977/874
摘要： An apparatus provided for evaluating electrical characteristics by bringing a plurality of metal probes in contact with a sample. A metal probe is formed on a free end of a cantilever on which are formed a resistor, two electrodes for resistance detection, and an electrode for measuring electrical characteristics. A tip of the metal probe projects beyond the free end of the cantilever. The probe position is controlled by an atomic force microscopy.
摘要翻译：一种用于通过使多个金属探针与样品接触来评估电特性的装置。金属探针形成在悬臂的自由端上，其上形成电阻器，两个用于电阻检测的电极和用于测量电特性的电极。金属探针的尖端超出悬臂的自由端。探针位置由原子力显微镜控制。

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