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1. 发明授权

US06177438B1 Morphinan derivatives and pharmaceutical use thereof 失效
标题翻译：吗啡衍生物及其药物用途
公开(公告)号：US06177438B1
公开(公告)日：2001-01-23
申请号：US08754750
申请日：1996-11-21
申请人： Hiroshi Nagase , Jun Hayakawa , Kuniaki Kawamura , Koji Kawai , Takashi Endoh
发明人： Hiroshi Nagase , Jun Hayakawa , Kuniaki Kawamura , Koji Kawai , Takashi Endoh
IPC分类号： C07D49108
CPC分类号： C07D489/08 , C07D489/00
摘要： A morphinan derivative or its pharmaceutically acceptable acid addition salt represented with, for example, and an analgesic, diuretic, antitussive and brain cell protector having its derivative or its salt as the active ingredient are described. The compound of the present invention possesses strong analgesic activity, diuretic action and antitussive action as a highly selective &kgr;-opioid agonist, allowing it to be used as a useful analgesic, diuretic and antitussive. On the other hand, the compound of the present invention also possesses remarkable cerebro-neuroprotective activity, thus allowing it be used as a useful cerebro-neuroprotective agents.
摘要翻译：描述了以其衍生物或其盐作为活性成分代表的吗啡喃衍生物或其药学上可接受的酸加成盐和镇痛药，利尿剂，镇咳药和脑细胞保护剂。本发明化合物具有强的止痛活性，利尿作用和镇咳作用作为高度选择性的κ-阿片样物质激动剂，使其可用作有用的止痛剂，利尿剂和镇咳药。另一方面，本发明的化合物也具有显着的脑血管保护作用，因此可用作有用的脑血管保护剂。

2. 发明授权

US06277859B1 Morphinan derivative and its pharmaceutical applications 失效
标题翻译：吗啡衍生物及其制药应用
公开(公告)号：US06277859B1
公开(公告)日：2001-08-21
申请号：US09541793
申请日：2000-03-31
申请人： Hiroshi Nagase , Koji Kawai , Kuniaki Kawamura , Jun Hayakawa , Takashi Endoh
发明人： Hiroshi Nagase , Koji Kawai , Kuniaki Kawamura , Jun Hayakawa , Takashi Endoh
IPC分类号： C07D48900
CPC分类号： C07D405/12 , C07D409/12 , C07D413/12 , C07D489/08
摘要： A morphinan derivative or its pharmacologically allowed acid addition salt represented with compound I, an analgesic and diuretic having its derivative or its salt as the active ingredient, and its production process are described. The compound of the present invention possesses strong analgesic activity and diuretic action as a highly selective &kgr;-opioid agonist, allowing it to be used as a useful analgesic and diuretic.
摘要翻译：描述了以化合物I表示的吗啡喃衍生物或其药理学允许的酸加成盐，其衍生物或其盐作为活性成分的止痛剂和利尿剂及其制备方法。本发明化合物作为高度选择性的κ-阿片样物质激动剂具有强的止痛活性和利尿作用，可用作有用的镇痛和利尿剂。

3. 发明授权

US06323212B1 Morphinan derivative and its pharmaceutical applications 失效
公开(公告)号：US06323212B1
公开(公告)日：2001-11-27
申请号：US08108643
申请日：1997-02-10
申请人： Hiroshi Nagase , Koji Kawai , Kuniaki Kawamura , Jun Hayakawa , Takashi Endoh
发明人： Hiroshi Nagase , Koji Kawai , Kuniaki Kawamura , Jun Hayakawa , Takashi Endoh
IPC分类号： C07D48900
CPC分类号： C07D405/12 , C07D409/12 , C07D413/12 , C07D489/08
摘要： A morphinan derivative or its pharmacologically allowed acid addition salt represented with compound I, an analgesic and diuretic having its derivative or its salt as the active ingredient, and its production process are described. The compound of the present invention possesses strong analgesic activity and diuretic action as a highly selective &kgr;-opioid agonist, allowing it to be used as a useful analgesic and diuretic.

4. 发明授权

US08217477B2 Magnetic memory cell and magnetic random access memory 有权
标题翻译：磁存储单元和磁性随机存取存储器
公开(公告)号：US08217477B2
公开(公告)日：2012-07-10
申请号：US12318243
申请日：2008-12-23
申请人： Hideo Ohno , Shoji Ikeda , Jun Hayakawa
发明人： Hideo Ohno , Shoji Ikeda , Jun Hayakawa
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： Provided is a reliable nonvolatile memory with a lower power consumption. A ferromagnetic interconnection which is magnetized antiparallel or parallel to a magnetization direction of a ferromagnetic pinned layer in a giant magnetoresistive device or a tunnel magnetoresistive device constituting the magnetic memory cell, is connected to a ferromagnetic free layer with a non-magnetic layer being interposed in between, the ferromagnetic free layer serving as a recording layer. Thereby, the magnetization of the recording layer is switched by use of a spin transfer torque.
摘要翻译：提供了具有较低功耗的可靠的非易失性存储器。在构成磁存储单元的巨磁电阻器件或隧道磁阻器件中被磁化反并联或平行于铁磁性钉扎层的磁化方向的铁磁互连连接到铁磁自由层，其中非磁性层插入作为记录层的铁磁自由层之间。由此，通过使用自旋转移转矩来切换记录层的磁化。

5. 发明授权

US07348589B2 Low power consumption magnetic memory and magnetic information recording device 有权
标题翻译：低功耗磁记忆和磁信息记录装置
公开(公告)号：US07348589B2
公开(公告)日：2008-03-25
申请号：US11213918
申请日：2005-08-30
申请人： Jun Hayakawa , Hideo Ohno
发明人： Jun Hayakawa , Hideo Ohno
IPC分类号： H01L47/00
CPC分类号： G11C11/16
摘要： A highly integrated magnetic memory with low power consumption is provided. A first element portion which has a free layer, a first pinned layer formed in the film thickness direction of the free layer, and an insulation barrier layer formed between the free layer and the first pinned layer, and a second element portion which has the aforementioned free layer, a second pinned layer formed in the film surface direction of the free layer, and a non-magnetic layer formed between the free layer and the second pinned layer are provided. A current IW flows in the film surface direction of the second element portion for writing the magnetic information and a current IR flows in the film thickness direction of the first element portion for reading the magnetic information.
摘要翻译：提供了低功耗高度集成的磁存储器。具有自由层的第一元件部分，在自由层的膜厚度方向上形成的第一被钉扎层和形成在自由层和第一被钉扎层之间的绝缘阻挡层，以及具有上述第一元件部分的第二元件部分自由层，在自由层的膜表面方向上形成的第二被钉扎层和形成在自由层和第二钉扎层之间的非磁性层。在第二元件部分的薄膜表面方向上流动电流I 以写入磁信息，并且电流I SUB在第一元件部分的膜厚度方向上流动用于读取磁信息。

6. 发明授权

US07203090B2 High output nonvolatile magnetic memory 有权
标题翻译：高输出非易失性磁记忆体
公开(公告)号：US07203090B2
公开(公告)日：2007-04-10
申请号：US11488719
申请日：2006-07-19
申请人： Jun Hayakawa
发明人： Jun Hayakawa
IPC分类号： G11C11/15
CPC分类号： B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F10/329
摘要： A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.
摘要翻译：磁存储器具有能够通过两个端子进行切换和磁化反转操作的高输出存储单元。形成包括二极管，自旋转移转矩磁化反转感应层和隧道磁阻器件的MIS结层叠层。位线和字线连接到层叠层。

7. 发明申请

US20070025029A1 Magnetoresistive device and nonvolatile magnetic memory equipped with the same 有权
标题翻译：磁阻器件和配备相同的非易失性磁存储器
公开(公告)号：US20070025029A1
公开(公告)日：2007-02-01
申请号：US11493892
申请日：2006-07-27
申请人： Jun Hayakawa , Hideo Ohno , Shoji Ikeda
发明人： Jun Hayakawa , Hideo Ohno , Shoji Ikeda
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01L43/10
摘要： A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.
摘要翻译：快速且功耗非常低的非易失性存储器。非易失性磁存储器包括高输出隧道磁阻器件，其中使用自旋转移转矩来进行写入。隧道磁阻器件具有这样的结构，使得包含Co，Fe和B的体心立方结构的铁磁膜，（100）中取向的岩盐结构的MgO绝缘膜和铁磁膜被堆叠。

8. 发明申请

US20060256614A1 High output nonvolatile magnetic memory 有权
标题翻译：高输出非易失性磁记忆体
公开(公告)号：US20060256614A1
公开(公告)日：2006-11-16
申请号：US11488719
申请日：2006-07-19
申请人： Jun Hayakawa
发明人： Jun Hayakawa
IPC分类号： G11C11/15
CPC分类号： B82Y25/00 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F10/329
摘要： A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.
摘要翻译：磁存储器具有能够通过两个端子进行切换和磁化反转操作的高输出存储单元。形成包括二极管，自旋转移转矩磁化反转感应层和隧道磁阻器件的MIS结层叠层。位线和字线连接到层叠层。

9. 发明授权

US07031111B2 Ferromagnetic tunnel magnetoresistive devices and magnetic head 失效
标题翻译：铁磁隧道磁阻器件和磁头
公开(公告)号：US07031111B2
公开(公告)日：2006-04-18
申请号：US10958326
申请日：2004-10-06
申请人： Jun Hayakawa
发明人： Jun Hayakawa
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/3951 , G11B5/3967 , G11B5/553 , G11B5/59683 , G11B2005/0018 , H01F10/00 , H01F10/1936 , H01F10/3254 , H01F10/3263 , H01F10/3268
摘要： A ferromagnetic tunnel magnetoresistive film is associated with a high output and whose magnetoresistive ratio is less dependent on a bias voltage. In a three-terminal ferromagnetic tunnel magnetoresistive element, a decrease in an output is suppressed by a bias voltage applied to one of the tunnel junctions. By employing half-metallic ferromagnets in the element, the output can be enhanced and the dependency on the applied bias voltage can be reduced.
摘要翻译：铁磁隧道磁阻膜与高输出相关联，并且其磁阻比不太依赖于偏置电压。在三端铁磁隧道磁阻元件中，通过施加到一个隧道结的偏压来抑制输出的减小。通过在元件中采用半金属铁磁体，可以提高输出，并且可以降低对施加的偏置电压的依赖性。

10. 发明授权

US06934133B2 Three terminal magnetic head having a magnetic semiconductor and a tunnel magnetoresistive film and magnetic recording apparatus including the head 失效
标题翻译：具有磁性半导体的三端子磁头和隧道磁阻膜以及包括磁头的磁记录装置
公开(公告)号：US06934133B2
公开(公告)日：2005-08-23
申请号：US10374089
申请日：2003-02-27
申请人： Jun Hayakawa , Kenchi Ito
发明人： Jun Hayakawa , Kenchi Ito
IPC分类号： G11B5/39 , H01F10/16 , H01F10/32 , H01L43/08 , H01L43/10 , G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B5/3909
摘要： A three terminal magnetoresistance head capable of providing a high output and a large output current is provided. A MIS junction multilayer film composed of a magnetic semiconductor, a metal magnetic multilayer film, and a tunnel magnetoresistance element is applied to a three terminal magnetoresistance device.
摘要翻译：提供能够提供高输出和大输出电流的三端子磁阻头。将由磁性半导体，金属磁性多层膜和隧道磁阻元件构成的MIS结多层膜应用于三端子磁阻器件。

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