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1. 发明授权

US06961357B2 Semiconductor laser module 有权
标题翻译：半导体激光模块
公开(公告)号：US06961357B2
公开(公告)日：2005-11-01
申请号：US10632331
申请日：2003-07-31
申请人： Hiroshi Moriya , Kisho Ashida , Yoshiaki Niwa
发明人： Hiroshi Moriya , Kisho Ashida , Yoshiaki Niwa
IPC分类号： H01S5/022 , H01S3/04 , H01S5/00 , H01S5/02
CPC分类号： H01S5/02252 , H01S5/005 , H01S5/02216 , H01S5/02236 , H01S5/02272
摘要： In a semiconductor laser module, in order to sufficiently reduce the thermal stress arising in a due to the bonding of elements when they are packaged and to improve the yield of production, the semiconductor laser module is provided with a semiconductor laser element, a submount bonded to the semiconductor laser element with a solder layer in-between and thereby mounted with it, and a base mounted with this submount with another solder layer in-between. Herein, T/W≧0.15 holds, where W is the width of the submount in the direction orthogonal to the optical axis of the semiconductor laser element and T is the thickness of the submount.
摘要翻译：在半导体激光器模块中，为了充分降低由于封装时的元件的接合而产生的热应力，并且为了提高生产成本，半导体激光器模块设置有半导体激光元件，到具有焊料层的半导体激光元件，并且由此安装有焊料层，以及安装有该基座的基座，其间具有另一个焊料层。这里，T / W> = 0.15，其中，W是与基板的光轴正交的方向上的基台的宽度，T是基台的厚度。

2. 发明授权

US06963593B2 Semiconductor laser module and optical transmitter 有权
标题翻译：半导体激光模块和光发射机
公开(公告)号：US06963593B2
公开(公告)日：2005-11-08
申请号：US10632350
申请日：2003-07-31
申请人： Hiroshi Moriya , Kisho Ashida , Toshiaki Ozaki
发明人： Hiroshi Moriya , Kisho Ashida , Toshiaki Ozaki
IPC分类号： G02B6/42 , H01S5/022 , H01S5/00 , H01S3/04
CPC分类号： H01S5/02216 , H01S5/02284
摘要： For preventing an optical axis from shifting due to a heat cycle in a semiconductor laser module, or in a optical transmitter, the semiconductor laser module comprises, a semiconductor laser element, a frame for storing the semiconductor laser element therein, an optical fiber fixing portion being connected to the frame; and a flange being connected to the frame, and having a fixing portion for fixing the frame on a substrate, wherein the flange has a narrow width region between a fixing region, including a foxing portion with the substrate therein, and the frame, and the narrow width region is narrower than width of the fixing region.
摘要翻译：为了防止光轴由于半导体激光器模块或光发射器中的热循环而偏移，半导体激光器模块包括半导体激光元件，用于存储半导体激光元件的框架，光纤固定部分连接到框架; 和凸缘连接到框架上，并具有用于将框架固定在基板上的固定部分，其中凸缘在包括具有其中的基板的一个固定区域和该框架之间的窄的区域之间具有窄的宽度区域，窄宽度区域比固定区域的宽度窄。

3. 发明授权

US06991950B2 Method for fabricating semiconductor laser element and the same laser element 失效
标题翻译：制造半导体激光元件和相同激光元件的方法
公开(公告)号：US06991950B2
公开(公告)日：2006-01-31
申请号：US10358175
申请日：2003-02-05
申请人： Hiroshi Moriya , Kisho Ashida , Toshinori Hirataka , Mamoru Morita
发明人： Hiroshi Moriya , Kisho Ashida , Toshinori Hirataka , Mamoru Morita
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , H01S5/02216 , H01S5/02284 , H01S5/0425 , H01S5/0683 , H01S5/209 , H01S5/2214 , H01S5/3201 , H01S5/4087 , H01S2301/176
摘要： There is provided a semiconductor laser element which can change band gap wavelengths without change of composition of a multiple quantum well active layer and a method for fabricating a semiconductor laser module. In the method for fabricating a semiconductor laser element wherein a multiple quantum well active layer is formed on a semiconductor substrate with a crystal growth method, an insulation film is formed at the upper part of the multiple quantum well active layer, an electrode film is moreover formed on the insulation film and at least a part of the electrode film is electrically connected to the multiple quantum well active layer, distortion of the multiple quantum well active layer is controlled in the semiconductor laser element fabrication process after the process of the crystal growth method.
摘要翻译：提供了可以改变带隙波长而不改变多量子阱有源层的组成的半导体激光元件和制造半导体激光器模块的方法。在利用晶体生长法在半导体衬底上形成多量子阱有源层的半导体激光元件的制造方法中，在多量子阱活性层的上部形成有绝缘膜，另外，还具有电极膜形成在绝缘膜上，并且电极膜的至少一部分电连接到多量子阱有源层，在半导体激光元件制造工艺中在晶体生长方法之后控制多量子阱有源层的失真。

4. 发明授权

US06937631B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06937631B2
公开(公告)日：2005-08-30
申请号：US10358279
申请日：2003-02-05
申请人： Hiroshi Moriya , Kisho Ashida , Toshinori Hirataka , Mamoru Morita
发明人： Hiroshi Moriya , Kisho Ashida , Toshinori Hirataka , Mamoru Morita
IPC分类号： H01S5/042 , H01S5/028 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/32 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/028 , H01S5/0421 , H01S5/0425 , H01S5/16 , H01S5/20 , H01S5/22 , H01S5/3201 , H01S5/34306 , H01S5/34313 , H01S2301/173
摘要： A semiconductor laser device which ensures high yield, high reliability and high power output by reduction in tensile strain in its active region for improvement in the COD level. The device comprises: a semiconductor crystal-growing portion having an active layer for conversion of electric energy into light energy and a mesa structure protruding on the one side; and an electrode film which is electrically connected with the top face of the mesa structure. The electrode film has a tensile strain and stretches sideward from the mesa structure. In the device, there is a strain control film which is polymerized with the electrode film part stretching sideward from the mesa structure and has a compressive stress.
摘要翻译：一种半导体激光器件，其通过减少其活性区域中的拉伸应变来确保高产率，高可靠性和高功率输出，以提高COD水平。该装置包括：半导体晶体生长部分，具有用于将电能转换成光能的活性层和在一侧突出的台面结构; 以及与台面结构的顶面电连接的电极膜。电极膜具有拉伸应变并且从台面结构向侧面延伸。在该装置中，存在与从台面结构向侧方延伸并具有压应力的电极膜部聚合的应变控制膜。

5. 发明申请

US20080061384A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20080061384A1
公开(公告)日：2008-03-13
申请号：US11936443
申请日：2007-11-07
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L29/78
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下，在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

6. 发明申请

US20080006851A1 Non-volatile phase-change memory and manufacturing method thereof 审中-公开
标题翻译：非易失性相变存储器及其制造方法
公开(公告)号：US20080006851A1
公开(公告)日：2008-01-10
申请号：US11825401
申请日：2007-07-06
申请人： Hiroshi Moriya , Tomio Iwasaki
发明人： Hiroshi Moriya , Tomio Iwasaki
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： In a non-volatile phase-change memory comprising: an interlayer dielectric film and a plug formed on one main surface side of a silicon substrate; a phase-change film which can take a different electric resistivity depending on a phase change and is provided on surfaces of the interlayer dielectric film and the plug; and an upper electrode film formed on an upper surface of the phase-change film, a relation between a film thickness of the phase-change film and an amount of protrusion of the upper electrode film from the plug is set to 0.3≦L/T≦1. Thus, a density of current flowing through the phase-change film near the outer periphery of the plug is reduced, thereby suppressing migration and enabling rewriting with low energy. Accordingly, a reliable non-volatile phase-change memory can be achieved.
摘要翻译：一种非易失性相变存储器，包括：层间电介质膜和形成在硅衬底的一个主表面侧上的插塞; 可以根据相变取得不同的电阻率并设置在层间绝缘膜和插头的表面上的相变膜; 以及形成在相变膜的上表面上的上电极膜，相变膜的膜厚与上电极膜与插塞的突出量之间的关系设定为0.3 <= L / T <= 1。因此，流过插塞外周附近的相变膜的电流密度降低，从而抑制迁移并能够以低能量进行重写。因此，可以实现可靠的非易失性相变存储器。

7. 发明授权

US06943076B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06943076B2
公开(公告)日：2005-09-13
申请号：US09943843
申请日：2001-08-30
申请人： Tomio Iwasaki , Hideo Miura , Hiroyuki Ohta , Hiroshi Moriya
发明人： Tomio Iwasaki , Hideo Miura , Hiroyuki Ohta , Hiroshi Moriya
IPC分类号： H01L29/43 , H01L21/28 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L29/423 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/336
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L27/10814 , H01L27/10873 , H01L27/10882 , H01L29/4966 , H01L29/513
摘要： Gate insulation films each containing titanium oxide as a primary constituent material are formed on one major surface of a semiconductor substrate. Gate electrode films are formed in contact with the gate insulation films. The gate electrode films contain ruthenium oxide or alternatively iridium oxide as a primary constituent material. In order to prevent electrically conductive elements from diffusing into titanium oxide of the gate insulation films, ruthenium oxide or iridium oxide is effectively used as a primary constituent material of the gate electrodes. A semiconductor device can be realized in which occurrence of a leak current is suppressed by increasing a physical film thickness while sustaining desired dielectric characteristic.
摘要翻译：在半导体衬底的一个主表面上形成各自含有氧化钛作为主要构成材料的栅极绝缘膜。形成与栅极绝缘膜接触的栅极电极膜。栅极电极膜含有氧化钌或氧化铱作为主要构成材料。为了防止导电元件扩散到栅极绝缘膜的氧化钛中，氧化钌或氧化铱被有效地用作栅电极的主要构成材料。可以实现半导体器件，其中通过在保持期望的介电特性的同时增加物理膜厚度来抑制泄漏电流的发生。

8. 发明申请

US20050051855A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20050051855A1
公开(公告)日：2005-03-10
申请号：US10910574
申请日：2004-08-04
申请人： Yoshiharu Kanegae , Tomio Iwasaki , Hiroshi Moriya
发明人： Yoshiharu Kanegae , Tomio Iwasaki , Hiroshi Moriya
IPC分类号： H01L21/283 , H01L21/28 , H01L21/314 , H01L21/3205 , H01L21/8234 , H01L21/8238 , H01L21/8247 , H01L23/52 , H01L27/04 , H01L27/088 , H01L27/115 , H01L29/417 , H01L29/51 , H01L29/76 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L21/28035 , H01L21/28202 , H01L21/823456 , H01L21/823462 , H01L21/82385 , H01L21/823857 , H01L27/115 , H01L29/518 , H01L29/7842 , H01L29/7845 , H01L29/7881
摘要： A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.
摘要翻译：半导体器件构成具有半导体衬底，形成在衬底上的栅极绝缘层和形成在栅极绝缘层上的栅电极的电场效应型晶体管。栅极绝缘层主要由氮氧化硅（SiON）形成，并且栅极绝缘层的应变状态是压缩应变状态。

9. 发明授权

US08049777B2 Insertion support system for specifying a location of interest as an arbitrary region and also appropriately setting a navigation leading to the specified region 有权
标题翻译：插入支持系统，用于将感兴趣的位置指定为任意区域，并且还适当地设置导向指定区域的导航
公开(公告)号：US08049777B2
公开(公告)日：2011-11-01
申请号：US11412397
申请日：2006-04-27
申请人： Shunya Akimoto , Junichi Ohnishi , Fumihiro Asano , Hiroshi Moriya , Koichi Yamazaki , Takashi Ishida
发明人： Shunya Akimoto , Junichi Ohnishi , Fumihiro Asano , Hiroshi Moriya , Koichi Yamazaki , Takashi Ishida
IPC分类号： A62B1/04
CPC分类号： A61B1/2676 , A61B5/06 , A61B6/00 , A61B90/10
摘要： According to an insertion support system of the present invention, when a biopsy area is specified at a periphery of the bronchi, the barycenter of the biopsy area is extracted. A circle centering on the barycenter is determined as a search area. The search area is expanded until the bronchi are located within the search area. A point in the search area to which the bronchi first reach is determined as an end point. A first route choice connecting the end point and a start point is determined. If the first route choice has not been registered yet, the first route choice is registered as a first registered route. Accordingly, a location of interest can be specified as an arbitrary region, and navigation leading to the specified region is appropriately set.
摘要翻译：根据本发明的插入支撑系统，当在支气管周边指定活检区域时，提取活检区域的重心。以重心为中心的圆确定为搜索区域。搜索区域扩展到支气管位于搜索区域内。支气管首先到达的检索区域的一个点被确定为终点。确定连接终点和起始点的第一路线选择。如果第一路线选择尚未登记，则将第一路线选择登记为第一登记路线。因此，可以将感兴趣的位置指定为任意区域，并且适当地设定导向指定区域的导航。

10. 发明申请

US20100052133A1 STACK TYPE SEMICONDUCTOR DEVICE WITH REINFORCING RESIN 审中-公开
标题翻译：具有增强树脂的堆叠型半导体器件
公开(公告)号：US20100052133A1
公开(公告)日：2010-03-04
申请号：US12496066
申请日：2009-07-01
申请人： Hisashi TANIE , Hiroshi Moriya , Masahiro Yamaguchi , Emi Sawayama
发明人： Hisashi TANIE , Hiroshi Moriya , Masahiro Yamaguchi , Emi Sawayama
IPC分类号： H01L23/52 , H01L21/50 , H01L21/607
CPC分类号： H01L24/86 , H01L23/5385 , H01L23/5387 , H01L24/29 , H01L24/50 , H01L25/0657 , H01L25/50 , H01L2224/13144 , H01L2225/06572 , H01L2225/06579 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2924/30105 , H01L2924/3512 , H01L2924/00 , H01L2224/48 , H01L2224/0401
摘要： A semiconductor device includes a plurality of semiconductor packages each with a semiconductor element and a flexible board. The flexible board is wider than the semiconductor element and is electrically connected to the semiconductor element. The plurality of semiconductor packages are stacked on one surface of a mother board. The semiconductor element is positioned between the flexible boards of the semiconductor packages in adjacent layers. The flexible boards in the adjacent layers are joined together at junction portions positioned at a part of the flexible boards which sticks out from an area in which the semiconductor elements and the flexible boards overlap. A reinforcing resin is provided in at least a part of the area between the flexible boards in the adjacent layers and between the junction portion of the flexible boards and the corresponding semiconductor element. The reinforcing resin contacts at least a part of the adjacent flexible board.
摘要翻译：半导体器件包括多个半导体封装，每个半导体封装均具有半导体元件和柔性板。柔性板比半导体元件宽，并与半导体元件电连接。多个半导体封装堆叠在母板的一个表面上。半导体元件位于相邻层中的半导体封装的柔性板之间。相邻层中的柔性板在位于柔性板的从半导体元件和柔性板重叠的区域伸出的部分的接合部处接合在一起。在相邻层中的柔性板之间的区域的至少一部分之间以及柔性板的接合部分和相应的半导体元件之间设置增强树脂。增强树脂与相邻柔性板的至少一部分接触。

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