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    • 4. 发明授权
    • Embedded electrode integrated optical devices and methods of fabrication
    • 嵌入式电极集成光学器件及其制造方法
    • US07373047B2
    • 2008-05-13
    • US10719892
    • 2003-11-21
    • David W. NippaSteven M. RisserRichard W. RidgwayTim L. ShortridgeVincent McGinnissKevin Spahr
    • David W. NippaSteven M. RisserRichard W. RidgwayTim L. ShortridgeVincent McGinnissKevin Spahr
    • G02F1/025G02F1/313
    • G02F1/065
    • Waveguide devices and schemes for fabricating waveguide devices useful in applications requiring modulation, attenuation, polarization control, and switching of optical signals are provided. In accordance with one embodiment of the present invention, a method of fabricating an integrated optical device is provided. The method comprises the acts of: (i) providing a support wafer defining an electrode support surface; (ii) forming an electrode pattern over the electrode support surface of the support wafer; (iii) forming a non-polymeric buffer layer on at least a portion of the electrode pattern and over at least a portion of the support wafer; (iv) forming a waveguide core material layer over the non-polymeric silica-based buffer layer; (v) removing portions of the core material layer to define a waveguide core; and (vi) positioning a cladding material in optical communication with the waveguide core such that the buffer layer, the cladding material, and the waveguide core define an optically-clad waveguide core.
    • 提供了用于制造用于需要调制,衰减,偏振控制和光信号切换的应用的波导器件的波导器件和方案。 根据本发明的一个实施例,提供了一种制造集成光学器件的方法。 该方法包括以下动作:(i)提供限定电极支撑表面的支撑晶片; (ii)在支撑晶片的电极支撑表面上形成电极图案; (iii)在所述电极图案的至少一部分上并在所述支撑晶片的至少一部分上形成非聚合物缓冲层; (iv)在非聚合二氧化硅基缓冲层上形成波导芯材料层; (v)去除所述芯材料层的部分以限定波导芯; 以及(vi)将包层材料定位成与所述波导芯光学连通,使得所述缓冲层,所述包层材料和所述波导芯限定光学包层波导芯。