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    • 7. 发明授权
    • High-purity copper sputtering targets and thin films
    • 高纯度铜溅射靶和薄膜
    • US06451135B1
    • 2002-09-17
    • US09081684
    • 1998-05-20
    • Kazushige TakahashiOsamu Kano
    • Kazushige TakahashiOsamu Kano
    • C23C1434
    • C23C14/185C23C14/3414H01L21/2855
    • There is provided copper targets for sputtering capable of forming a deposition film with low electric resistance indispensable for high-speed operation elements and also with excellent thickness uniformity, and such thin copper films. A high-purity copper sputtering target is characterized by comprising up to 0.1 ppm each Na and K, up to 1 ppm each Fe, Ni, Cr, Al, Ca, Mg, up to 5 ppm each carbon and oxygen, up to 1 ppb each U and Th, and, excluding gaseous constituents, more than 99.999% copper. Preferably the average grain size on the sputter surface is 250 &mgr;m or below, with its dispersion thin plus or minus 20%. I(111)/I(200) of X-ray diffraction peak intensity on the sputter plane is at least 2.4 with its dispersion within plus or minus 20%.
    • 提供用于溅射的铜靶,其能够形成对于高速操作元件不可缺少的低电阻并且具有优异的厚度均匀性的沉积膜,以及这种薄的铜膜。 高纯度铜溅射靶的特征在于每个Na和K含有高达0.1ppm的Fe,Ni,Cr,Al,Ca,Mg,每个碳和氧高达5ppm,最高达1ppb 每个U和Th,不包括气体组分,铜超过99.999%。 优选地,溅射表面上的平均晶粒尺寸为250μm或更小,其分散体薄加或减20%。 溅射平面上的X射线衍射峰强度的I(111)/ I(200)至少为2.4,其分散在正或负20%之内。