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1. 发明授权

US07436633B2 Thin-film magnetic head, head gimbal assembly and hard disk system 有权
标题翻译：薄膜磁头，磁头万向架组件和硬盘系统
公开(公告)号：US07436633B2
公开(公告)日：2008-10-14
申请号：US11205072
申请日：2005-08-17
申请人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
发明人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
IPC分类号： G11B5/245
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/31 , G11B5/3912 , G11B5/3967 , G11B5/4826 , G11B2005/3996
摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.
摘要翻译：在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。

2. 发明授权

US07894168B2 Thin-film magnetic head comprising a magneto-resistive effect device of a CPP structure and having a shunting layer 有权
标题翻译：薄膜磁头包括CPP结构的磁阻效应器件并具有分流层
公开(公告)号：US07894168B2
公开(公告)日：2011-02-22
申请号：US11846170
申请日：2007-08-28
申请人： Hiroshi Kiyono , Tetsuya Kuwashima
发明人： Hiroshi Kiyono , Tetsuya Kuwashima
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093
摘要： The invention provides a thin-film magnetic head having a magneto-resistive effect device of the CPP (current perpendicular to plane) structure comprising a multilayer film in which a fixed magnetization layer, a nonmagnetic layer and a free layer are stacked together in order. The fixed magnetization layer, nonmagnetic layer and free layer extend away from an air bearing surface that is a plane in opposition to a medium, the length of the fixed magnetization layer in a depth direction normal to said air bearing surface is greater than the length of the free layer in the depth direction. A shunt layer for shunting the sense current is located at a farther distance in the depth direction than the free layer, and the shunt layer is separated from the free layer by a constant gap in the depth direction.
摘要翻译：本发明提供一种具有CPP（电流垂直于平面）结构的磁阻效应器件的薄膜磁头，其包括多层膜，其中固定磁化层，非磁性层和自由层按顺序堆叠在一起。固定磁化层，非磁性层和自由层远离与介质相反的平面的空气轴承表面延伸，固定磁化层在垂直于所述空气轴承表面的深度方向上的长度大于自由层在深度方向。用于分流感测电流的并联层位于深度方向上比自由层更远的距离，并且分流层在深度方向上通过恒定的间隙与自由层分离。

3. 发明申请

US20090059436A1 THIN-FILM MAGNETIC HEAD HAVING CPP STRUCTURE MAGNETO-RESISTIVE EFFECT DEVICE 有权
标题翻译：具有CPP结构磁电阻效应器件的薄膜磁头
公开(公告)号：US20090059436A1
公开(公告)日：2009-03-05
申请号：US11846170
申请日：2007-08-28
申请人： Hiroshi Kiyono , Tetsuya Kuwashima
发明人： Hiroshi Kiyono , Tetsuya Kuwashima
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093
摘要： The invention provides a thin-film magnetic head having a magneto-resistive effect device of the CPP (current perpendicular to plane) structure comprising a multilayer film in which a fixed magnetization layer, a nonmagnetic layer and a free layer are stacked together in order. The fixed magnetization layer, nonmagnetic layer and free layer extend rearward from an air bearing surface that is a plane in opposition to a medium, the length of the depth-wise side of the fixed magnetization layer is longer than that of the free layer, and a shunt layer for shunting a sense current is formed more on the depth-wise side of, and kept constantly away from, the free layer. There are thus much more favorable advantages obtained: even when device size is further reduced and narrowed, degradation of frequency characteristics is hold back, any increase in the thermal magnetic noise is stayed off, and performance fluctuations are minimized.
摘要翻译：本发明提供一种具有CPP（电流垂直于平面）结构的磁阻效应器件的薄膜磁头，其包括多层膜，其中固定磁化层，非磁性层和自由层按顺序堆叠在一起。固定磁化层，非磁性层和自由层从作为与介质相反的平面的空气轴承表面向后延伸，固定磁化层的深度方向的长度比自由层的长度长，用于分流感测电流的并联层更多地形成在自由层的深度方面并且保持不断地远离自由层。因此，获得了更多有利的优点：即使当器件尺寸进一步减小和变窄时，频率特性的劣化被阻止，热磁噪声的任何增加都将被停止，并且性能波动最小化。

4. 发明申请

US20060221511A1 Low-resistance tunnel magnetoresistive effect element, and manufacturing method, testing method and testing apparatus for the element 有权
标题翻译：低电阻隧道磁阻效应元件，以及元件的制造方法，测试方法和测试装置
公开(公告)号：US20060221511A1
公开(公告)日：2006-10-05
申请号：US11387876
申请日：2006-03-24
申请人： Shunji Saruki , Kenji Inage , Tetsuya Kuwashima , Hiroshi Kiyono , Katsumichi Tagami , Kazumasa Fukuda , Masahide Kohno
发明人： Shunji Saruki , Kenji Inage , Tetsuya Kuwashima , Hiroshi Kiyono , Katsumichi Tagami , Kazumasa Fukuda , Masahide Kohno
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/455 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0
摘要翻译：提供具有充分降低的元件电阻和限制弹出噪声的TMR效应元件，其包括主要由包括许多电荷位点的金属氧化物形成的隧道势垒层。电荷位置密度n和由于电荷位点而陷入的电子的迁移率μ满足由下式表示的关系：0 <（N _{s1 （mu≠0）> / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / 当元件电阻在读取信号期间分别为最小值和最大值时，隧道电子的密度分别为SUP> <0.2，其中N _{s1 和n2s2 < / SUB>是未被捕获的电子的迁移率。}}

5. 发明申请

US20060082929A1 Thin-film magnetic head, head gimbal assembly and hard disk system 有权
标题翻译：薄膜磁头，磁头万向架组件和硬盘系统
公开(公告)号：US20060082929A1
公开(公告)日：2006-04-20
申请号：US11205072
申请日：2005-08-17
申请人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
发明人： Hiroshi Kiyono , Tetsuya Kuwashima , Takeo Kagami , Noriaki Kasahara , Naoki Ohta , Nozomu Hachisuka
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/1278 , G11B5/31 , G11B5/3912 , G11B5/3967 , G11B5/4826 , G11B2005/3996
摘要： A parasitic capacity C4 generated between a slider substrate and the first shield layer with the first insulating layer as a capacity layer is made substantially equal to a parasitic capacity C2 occurring between a lower magnetic layer and the second shield layer with the third insulating layer as a capacity layer. Preferably, a connection is made between the lower magnetic layer and the slider substrate by a resistance of preferably 100 (Ω) or lower. Thus, it is possible to provide a thin-film magnetic head that can hold back deterioration in a reproducing device and the occurrence of errors due to crosstalk between a recording device and the reproducing device and extraneous noises.
摘要翻译：在第一绝缘层作为电容层的滑块基板与第一屏蔽层之间产生的寄生电容C 4大体上等于具有第三绝缘层的下磁层与第二屏蔽层之间的寄生电容C 2 作为容量层。优选地，通过优选100（Ω）或更低的电阻在下磁性层和滑块基板之间形成连接。因此，可以提供能够抑制再现装置中的劣化的薄膜磁头和由于记录装置与再现装置之间的串扰而引起的错误的发生以及无关的噪声。

6. 发明授权

US07916434B2 Tunnel magnetoresistive effect element with limited electric popping output voltage 有权
标题翻译：隧道磁阻效应元件具有有限的电涌输出电压
公开(公告)号：US07916434B2
公开(公告)日：2011-03-29
申请号：US11387876
申请日：2006-03-24
申请人： Shunji Saruki , Kenji Inage , Tetsuya Kuwashima , Hiroshi Kiyono , Katsumichi Tagami , Kazumasa Fukuda , Masahide Kohno
发明人： Shunji Saruki , Kenji Inage , Tetsuya Kuwashima , Hiroshi Kiyono , Katsumichi Tagami , Kazumasa Fukuda , Masahide Kohno
IPC分类号： G11B5/33
CPC分类号： G11B5/455 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3903 , G11B5/3909 , H01F10/3254 , H01F41/303 , H01L43/08 , H01L43/12
摘要： A TMR effect element with sufficiently reduced element resistance and restricted popping noise is provided, which comprises a tunnel barrier layer formed primarily of a metal oxide including many electric charge sites. The electric charge sites density n and the mobility μ of electrons trapped due to the electric charge sites satisfy a relationship expressed by: 0
摘要翻译：提供具有充分降低的元件电阻和限制弹出噪声的TMR效应元件，其包括主要由包括许多电荷位点的金属氧化物形成的隧道势垒层。电荷位置密度n和由于电荷位点捕获的电子的迁移率μ满足由下式表示的关系：0 <（ns1-1-ns2-1）-1·（μ0-μ）·（nμ）-1 <0.2，其中ns1和ns2是在读取信号期间元件电阻分别为最小值和最大值时隧道电子的密度，μ0是未被捕获时电子的迁移率。

7. 发明申请

US20090038143A1 Method of manufacturing magneto-resistive device, magnetic head, head suspension assembly and magnetic disk apparatus 有权
标题翻译：制造磁阻元件，磁头，磁头悬挂组件和磁盘装置的方法
公开(公告)号：US20090038143A1
公开(公告)日：2009-02-12
申请号：US12232785
申请日：2008-09-24
申请人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
发明人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.
摘要翻译：提供了一种用于制造磁阻装置的方法。该磁阻装置用于减少由退火引起的器件特性的劣化。磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。最靠近基底的绝缘层的层由金属或半导体氧化物制成。该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。

8. 发明授权

US06669983B2 Manufacturing method of thin-film magnetic head with magnetoresistive effect element 失效
公开(公告)号：US06669983B2
公开(公告)日：2003-12-30
申请号：US10279125
申请日：2002-10-24
申请人： Takeo Kagami , Naoki Ohta , Tetsuya Kuwashima
发明人： Takeo Kagami , Naoki Ohta , Tetsuya Kuwashima
IPC分类号： B05D512
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996
摘要： A manufacturing method of a thin-film magnetic head provided with an MR element includes a step of forming an MR multi-layered structure in which a current flows in a direction perpendicular to surfaces of layers of the MR multi-layered structure, on a lower electrode film, a step of depositing an insulation film on the formed MR multi-layered structure and the lower electrode film, a step of flattening the deposited insulation film until at least upper surface of the MR multi-layered structure is exposed, and a step of forming an upper electrode film on the flattened insulation film and the MR multi-layered structure.

9. 发明授权

US07784171B2 Method of manufacturing a magneto-resistive device 有权
标题翻译：制造磁阻元件的方法
公开(公告)号：US07784171B2
公开(公告)日：2010-08-31
申请号：US11797603
申请日：2007-05-04
申请人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
发明人： Takeo Kagami , Tetsuya Kuwashima , Norio Takahashi
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3906 , G11B5/3909 , G11B2005/3996 , Y10T29/49021 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is provided for manufacturing a magneto-resistive device. The magneto-resistive device is for reducing the deterioration in the characteristics of the device due to annealing. The magneto-resistive device has a magneto-resistive layer formed on one surface side of a base, and an insulating layer formed of two layers and deposited around the magneto-resistive layer. The layer of the insulating layer closest to the base is made of a metal or semiconductor oxide. This layer extends over end faces of a plurality of layers made of different materials from one another, which make up the magneto-resistive device, and is in contact with the end faces of the plurality of layers with the same materials.
摘要翻译：提供了一种用于制造磁阻装置的方法。该磁阻装置用于减少由退火引起的器件特性的劣化。磁阻装置具有形成在基底的一个表面侧上的磁阻层和由两层形成并且沉积在磁阻层周围的绝缘层。最靠近基底的绝缘层的层由金属或半导体氧化物制成。该层在由不同材料制成的多个层的端面上延伸，其构成磁阻装置，并且与相同材料的多个层的端面接触。

10. 发明申请

US20080013221A1 THIN-FILM MAGNETIC HEAD, MAGNETIC HEAD ASSEMBLY, MAGNETIC DISK DRIVE APPARATUS AND METHOD FOR MANUFACTURING THIN-FILM MAGNETIC HEAD 有权
标题翻译：薄膜磁头，磁头组件，磁盘驱动装置及制造薄膜磁头的方法
公开(公告)号：US20080013221A1
公开(公告)日：2008-01-17
申请号：US11760149
申请日：2007-06-08
申请人： Naoki OHTA , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
发明人： Naoki OHTA , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
IPC分类号： G11B5/11
CPC分类号： G11B5/31 , B82Y10/00 , B82Y25/00 , G11B5/112 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B5/3967 , G11B5/398
摘要： The present invention relates to a thin-film magnetic head which prevents leakage of magnetic fluxes from an edge area of a lower and/or an upper shield layers of a magnetoresistive effect read head element. The thin-film magnetic head have a magnetoresistive effect read head element that includes a lower shield layer, an upper shield layer, a magnetoresistive effect layer, which is formed between the lower shield layer and the upper shield layer, and a lower antiferromagnetic layer which is contacted with the lower shield layer only at an edge area of the lower shield layer.
摘要翻译：本发明涉及一种防止磁通从磁阻效应读头元件的下屏蔽层和/或上屏蔽层的边缘区域泄漏的薄膜磁头。薄膜磁头具有磁阻效应读头元件，其包括形成在下屏蔽层和上屏蔽层之间的下屏蔽层，上屏蔽层，磁阻效应层和下反铁磁层，仅在下屏蔽层的边缘区域与下屏蔽层接触。

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