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1. 发明申请

US20110227033A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER 有权
标题翻译：半导体发光装置，散热器，制造半导体发光装置的方法及制造方法
公开(公告)号：US20110227033A1
公开(公告)日：2011-09-22
申请号：US12876685
申请日：2010-09-07
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Alx1Ga1-x1-y1Iny1N (0
摘要翻译：根据一个实施例，半导体发光器件包括第一层，第二层和发光部分。第一层包括n型GaN和n型AlGaN中的至少一种。第二层包括p型AlGaN。发光部分具有单个量子阱结构。单量子阱结构包括第一阻挡层，第二阻挡层和阱层。第一阻挡层设置在第一层和第二层之间，并且包括Al x Ga 1-x 1-y 1 In y N（0

2. 发明授权

US09012888B2 Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer 有权
标题翻译：半导体发光器件，晶片，半导体发光器件的制造方法以及晶片的制造方法
公开(公告)号：US09012888B2
公开(公告)日：2015-04-21
申请号：US13406705
申请日：2012-02-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一层n型和第二层p型，包括氮化物半导体，设置在第一和第二层之间的发光单元，第一层叠结构，第一层和发光单元，以及设置在第一层和第一堆叠结构之间的第二堆叠结构。发光单元包括阻挡层和设置在阻挡层之间的阱层。第一堆叠结构包括包括氮化物半导体的第三层和与第三层堆叠并包括GaInN的第四层。第四层具有比阱层更薄的厚度。第二堆叠结构包括包括氮化物半导体的第五层和与第五层堆叠并包括GaInN的第六层。第六层的厚度比井层薄。

3. 发明授权

US08937325B2 Semiconductor device, wafer, method for manufacturing semiconductor device, and method for manufacturing wafer 有权
标题翻译：半导体器件，晶片，半导体器件的制造方法以及晶片的制造方法
公开(公告)号：US08937325B2
公开(公告)日：2015-01-20
申请号：US13406740
申请日：2012-02-28
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Hiroshi Katsuno , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/00 , H01L33/06 , H01L33/32
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/32
摘要： According to one embodiment, a semiconductor device includes a first layer of n-type including a nitride semiconductor, a second layer of p-type including a nitride semiconductor, a light emitting unit, and a first stacked body. The light emitting unit is provided between the first and second layers. The first stacked body is provided between the first layer and the light emitting unit. The first stacked body includes a plurality of third layers including AlGaInN, and a plurality of fourth layers alternately stacked with the third layers and including GaInN. The first stacked body has a first surface facing the light emitting unit. The first stacked body has a depression provided in the first surface. A part of the light emitting unit is embedded in a part of the depression. A part of the second layer is disposed on the part of the light emitting unit.
摘要翻译：根据一个实施例，半导体器件包括包括氮化物半导体的n型第一层，包括氮化物半导体的p型第二层，发光单元和第一层叠体。发光单元设置在第一和第二层之间。第一层叠体设置在第一层和发光单元之间。第一层叠体包括多个包含AlGaInN的第三层和与第三层交替堆叠并包括GaInN的多个第四层。第一层叠体具有面向发光单元的第一表面。第一层叠体具有设置在第一表面中的凹陷。发光单元的一部分嵌入凹部的一部分。第二层的一部分设置在发光单元的一部分上。

4. 发明授权

US08921886B2 Semiconductor light emitting device, semiconductor light emitting apparatus, and method for manufacturing semiconductor light emitting device 有权
标题翻译：半导体发光器件，半导体发光器件和半导体发光器件的制造方法
公开(公告)号：US08921886B2
公开(公告)日：2014-12-30
申请号：US13204021
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/00 , H01L33/40
CPC分类号： H01L33/405 , H01L24/32 , H01L33/40 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体和电极。叠层结构体具有包括氮化物系半导体的第一导电型第一半导体层，包含氮化物系半导体的第二导电型第二半导体层和设置在第一半导体层与第二半导体层之间的发光层。电极具有第一，第二和第三金属层。第一金属层设置在第二半导体层上并且包括银或银合金。第二金属层设置在第一金属层上，并且包括铂，钯，铑，铱，钌，锇中的至少一种元素。第三金属层设置在第二金属层上。沿第一至第二半导体层的方向的第三金属层的厚度等于或大于第二金属层的厚度。

5. 发明授权

US09130127B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09130127B2
公开(公告)日：2015-09-08
申请号：US13204082
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/38 , H01L33/22
CPC分类号： H01L33/382 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/385 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极。叠层结构体包括第一和第二半导体层以及设置在第二和第一半导体层之间的发光层，并且具有第一和第二主表面。第一电极具有与第一半导体层接触的第一接触部分。第二电极具有与第二半导体层接触的部分。第一主表面一侧的第一半导体层的表面具有第一部分，其第一部分具有与第一半导体层的接触表面重叠的部分，第二部分具有与第二半导体层重叠的部分。第二部分是不规律的。不规则的间距比发光的峰值波长长。第一部分具有比第二部分更小的不规则性。

6. 发明授权

US08729583B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08729583B2
公开(公告)日：2014-05-20
申请号：US12873670
申请日：2010-09-01
申请人： Hiroshi Katsuno , Yasuo Ohba , Mitsuhiro Kushibe , Kei Kaneko , Shinji Yamada
发明人： Hiroshi Katsuno , Yasuo Ohba , Mitsuhiro Kushibe , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/22
CPC分类号： H01L33/382 , H01L33/22 , H01L33/405 , H01L2224/48091 , H01L2224/73265 , H01L2924/19107 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer, a second semiconductor layer, a light-emitting layer, a third semiconductor layer and a first electrode. The first semiconductor layer of a first conductivity type has a first major surface provided with a first surface asperity. The second semiconductor layer of a second conductivity type is provided on an opposite side of the first semiconductor layer from the first major surface. The light-emitting layer is provided between the first and second semiconductor layers. The first semiconductor layer is disposed between a third semiconductor layer and the light-emitting layer. The third semiconductor layer has an impurity concentration lower than an impurity concentration of the first semiconductor layer, and includes an opening exposing the first surface asperity. The first electrode is in contact with the first surface asperity through the opening, and reflective to emission light emitted from the light-emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层，发光层，第三半导体层和第一电极。第一导电类型的第一半导体层具有设置有第一表面粗糙度的第一主表面。第二导电类型的第二半导体层设置在第一半导体层与第一主表面相对的一侧上。发光层设置在第一和第二半导体层之间。第一半导体层设置在第三半导体层和发光层之间。第三半导体层的杂质浓度低于第一半导体层的杂质浓度，并且包括露出第一表面粗糙度的开口。第一电极通过开口与第一表面凹凸接触，并且反射到从发光层发射的发射光。

7. 发明申请

US20120235168A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120235168A1
公开(公告)日：2012-09-20
申请号：US13204082
申请日：2011-08-05
申请人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi Katsuno , Yasuo Ohba , Satoshi Mitsugi , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/40
CPC分类号： H01L33/382 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/385 , H01L2224/48091 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体，第一和第二电极。叠层结构体包括第一和第二半导体层以及设置在第二和第一半导体层之间的发光层，并且具有第一和第二主表面。第一电极具有与第一半导体层接触的第一接触部分。第二电极具有与第二半导体层接触的部分。第一主表面一侧的第一半导体层的表面具有第一部分，其第一部分具有与第一半导体层的接触表面重叠的部分，第二部分具有与第二半导体层重叠的部分。第二部分是不规律的。不规则的间距比发光的峰值波长长。第一部分具有比第二部分更小的不规则性。

8. 发明申请

US20120217531A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置，半导体发光装置及制造半导体发光装置的方法
公开(公告)号：US20120217531A1
公开(公告)日：2012-08-30
申请号：US13204021
申请日：2011-08-05
申请人： Hiroshi KATSUNO , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
发明人： Hiroshi KATSUNO , Yasuo Ohba , Shinji Yamada , Mitsuhiro Kushibe , Kei Kaneko
IPC分类号： H01L33/40 , H01L33/50
CPC分类号： H01L33/405 , H01L24/32 , H01L33/40 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： According to one embodiment, a semiconductor light emitting device includes a stacked structure body and an electrode. The stacked structure body has a first conductivity type first semiconductor layer including a nitride-based semiconductor, a second conductivity type second semiconductor layer including a nitride-based semiconductor, and a light emitting layer provided between the first and second semiconductor layers. The electrode has first, second and third metal layers. The first metal layer is provided on the second semiconductor layer and includes silver or silver alloy. The second metal layer is provided on the first metal layer and includes at least one element of platinum, palladium, rhodium, iridium, ruthenium, osmium. The third metal layer is provided on the second metal layer. A thickness of the third metal layer along a direction from the first toward the second semiconductor layer is equal to or greater than a thickness of the second metal layer.
摘要翻译：根据一个实施例，半导体发光器件包括堆叠结构体和电极。叠层结构体具有包括氮化物系半导体的第一导电型第一半导体层，包含氮化物系半导体的第二导电型第二半导体层和设置在第一半导体层与第二半导体层之间的发光层。电极具有第一，第二和第三金属层。第一金属层设置在第二半导体层上并且包括银或银合金。第二金属层设置在第一金属层上，并且包括铂，钯，铑，铱，钌，锇中的至少一种元素。第三金属层设置在第二金属层上。沿第一至第二半导体层的方向的第三金属层的厚度等于或大于第二金属层的厚度。

9. 发明授权

US08569738B2 Semiconductor light emitting device, wafer, method for manufacturing semiconductor light emitting device, and method for manufacturing wafer 有权
标题翻译：半导体发光器件，晶片，半导体发光器件的制造方法以及晶片的制造方法
公开(公告)号：US08569738B2
公开(公告)日：2013-10-29
申请号：US12876685
申请日：2010-09-07
申请人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
发明人： Mitsuhiro Kushibe , Yasuo Ohba , Kei Kaneko , Hiroshi Katsuno , Shinji Yamada
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/007 , H01L33/32
摘要： According to one embodiment, a semiconductor light emitting device includes a first layer, a second layer, and a light emitting portion. The first layer includes at least one of n-type GaN and n-type AlGaN. The second layer includes p-type AlGaN. The light emitting portion has a single quantum well structure. The single quantum well structure includes a first barrier layer, a second barrier layer, and a well layer. The first barrier layer is provided between the first layer and the second layer and includes Alx1Ga1-x1-y1Iny1N (0
摘要翻译：根据一个实施例，半导体发光器件包括第一层，第二层和发光部分。第一层包括n型GaN和n型AlGaN中的至少一种。第二层包括p型AlGaN。发光部分具有单个量子阱结构。单量子阱结构包括第一阻挡层，第二阻挡层和阱层。第一阻挡层设置在第一层和第二层之间，并且包括Al x Ga 1-x-y 1 In y 1 N（0

10. 发明授权

US08421085B2 Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US08421085B2
公开(公告)日：2013-04-16
申请号：US12873678
申请日：2010-09-01
申请人： Hiroshi Katsuno , Yasuo Ohba , Mitsuhiro Kushibe , Kei Kaneko , Shinji Yamada
发明人： Hiroshi Katsuno , Yasuo Ohba , Mitsuhiro Kushibe , Kei Kaneko , Shinji Yamada
IPC分类号： H01L33/22
CPC分类号： H01L33/382 , H01L33/22 , H01L33/405 , H01L2224/48091 , H01L2224/73265 , H01L2924/01322 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： According to one embodiment, a semiconductor light-emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light-emitting layer, a third semiconductor layer and a first electrode. The light-emitting layer is provided between the first and second semiconductor layers. The third semiconductor layer is provided on opposite side of the first semiconductor layer from the light-emitting layer, has a lower impurity concentration than the first semiconductor layer, and includes an opening exposing part of the first semiconductor layer. The first electrode is in contact with the first semiconductor layer through the opening. The third semiconductor layer further includes a rough surface portion which is provided on opposite side from the first semiconductor layer and includes a surface asperity larger than wavelength in the third semiconductor layer of peak wavelength of emission light emitted from the light-emitting layer.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，发光层，第三半导体层和第一电极。发光层设置在第一和第二半导体层之间。第三半导体层设置在第一半导体层与发光层的相对侧上，其杂质浓度低于第一半导体层，并且包括第一半导体层的露出部分的开口。第一电极通过开口与第一半导体层接触。第三半导体层还包括设置在与第一半导体层相反一侧的粗糙表面部分，并且包括比从发光层发射的发射光的峰值波长的第三半导体层中的波长大的表面粗糙度。

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