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1. 发明申请

US20100151695A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE ANNEALING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：基板加工装置，基板退火方法和半导体装置制造方法
公开(公告)号：US20100151695A1
公开(公告)日：2010-06-17
申请号：US12636928
申请日：2009-12-14
申请人： Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
发明人： Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
IPC分类号： H01L21/477 , F27D11/00 , F27D11/06 , F27D11/02
CPC分类号： F27B17/0025 , H01L21/67109 , H01L21/67115
摘要： A substrate processing apparatus includes a chamber capable of being evacuated, a substrate stage adapted to mount a substrate, a heating unit adapted to be set above the substrate mounting surface of the substrate stage, face the substrate mounted on at least the substrate mounting surface, and heat the substrate by radiant heat without being in contact with the substrate, a shutter adapted to be retractably inserted in the space between the heating unit and the substrate mounted on the substrate mounting surface, and a shutter driving unit adapted to extend/retract the shutter into/from the space. The substrate is mounted on the substrate stage to face the heating unit, the substrate is annealed by heating the substrate by radiant heat from the heating unit, and the shutter is extended into the space between the heating unit and the substrate stage.
摘要翻译：基板处理装置包括能够被抽真空的室，适于安装基板的基板台，适于设置在基板台的基板安装表面上方的加热单元，面对安装在至少基板安装表面上的基板，并且通过辐射热加热基板而不与基板接触，适于可缩回地插入在加热单元和安装在基板安装表面上的基板之间的空间中的闸板以及适于延伸/缩回的快门驱动单元快门进/从空间。将基板安装在基板台上以面对加热单元，通过从加热单元的辐射热加热基板来对基板进行退火，并且快门延伸到加热单元和基板台之间的空间中。

2. 发明申请

US20090321412A1 VACUUM HEATING APPARATUS 有权
标题翻译：真空加热装置
公开(公告)号：US20090321412A1
公开(公告)日：2009-12-31
申请号：US12483691
申请日：2009-06-12
申请人： Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
发明人： Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
IPC分类号： F27D11/00
CPC分类号： H01L21/67115
摘要： Deterioration of an O ring due to radiation heating in a vacuum heating apparatus is prevented to allow heat treatment of a substrate with good annealing properties. The vacuum heating apparatus 1 includes a vacuum chamber 2 constituted by flanges 11 and 12 having an opening portion 9 and joined together, a turbo molecular pump 17 for exhausting gas from the vacuum chamber 2, and a heater base 3 for heating a substrate 5 placed in the vacuum chamber 2. Joint surfaces of the flanges 11 and 12 are sealed by an O ring 10. Further, bonding steps 13 are formed between the heater base 3 and the O ring 10 on the joint surfaces of the flanges 11 and 12, thereby preventing thermo-radiation from the heater base 3 from reaching the O ring 10 through the joint surfaces of the flanges 11 and 12.
摘要翻译：防止由于真空加热装置中的辐射加热导致的O形环的劣化，从而允许具有良好退火性能的基板的热处理。真空加热装置1包括由具有开口部分9并连接在一起的凸缘11和12构成的真空室2，用于从真空室2排出气体的涡轮分子泵17和用于加热基板5的加热器基座3 凸缘11和12的接合表面由O形环10密封。此外，在凸缘11和12的接合表面上的加热器基座3和O形环10之间形成接合台阶13，从而防止来自加热器基座3的热辐射通过凸缘11和12的接合表面到达O形环10。

3. 发明授权

US09147742B2 Heat treatment apparatus and semiconductor device manufacturing method 有权
标题翻译：热处理装置及半导体装置的制造方法
公开(公告)号：US09147742B2
公开(公告)日：2015-09-29
申请号：US13011565
申请日：2011-01-21
申请人： Hiroshi Doi , Masami Shibagaki , Yuichi Sasuga
发明人： Hiroshi Doi , Masami Shibagaki , Yuichi Sasuga
IPC分类号： H01L21/26 , F27D15/02 , H01L29/66 , H01L21/04 , H01L21/67 , H01L29/16
CPC分类号： H01L29/6606 , H01L21/046 , H01L21/67109 , H01L21/67115 , H01L29/1608
摘要： A heat treatment apparatus including a vacuum vessel, a substrate stage which holds a substrate mounted on it, a heating unit for heating the substrate, and an exhaust unit for evacuating the vacuum vessel includes a first reflector which covers the upper portion of the exhaust port of the exhaust unit while being spaced apart from the exhaust port, and a second reflector which surrounds the exhaust port. At least one of reflector members which form the second reflector faces a direction defined from the heating unit to the exhaust port.
摘要翻译：一种热处理装置，包括真空容器，保持安装在其上的基板的基板台，用于加热基板的加热单元和用于抽空真空容器的排气单元，包括：第一反射器，其覆盖排气口的上部的排气单元，同时与排气口间隔开;以及第二反射器，其围绕排气口。形成第二反射器的反射器构件中的至少一个面向从加热单元限定到排气口的方向。

4. 发明申请

US20110117753A1 HEAT TREATMENT APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：热处理设备和半导体器件制造方法
公开(公告)号：US20110117753A1
公开(公告)日：2011-05-19
申请号：US13011565
申请日：2011-01-21
申请人： Hiroshi Doi , Masami Shibagaki , Yuichi Sasuga
发明人： Hiroshi Doi , Masami Shibagaki , Yuichi Sasuga
IPC分类号： H01L21/26 , F27D15/02
CPC分类号： H01L29/6606 , H01L21/046 , H01L21/67109 , H01L21/67115 , H01L29/1608
摘要： A heat treatment apparatus including a vacuum vessel, a substrate stage which holds a substrate mounted on it, a heating unit for heating the substrate, and an exhaust unit for evacuating the vacuum vessel includes a first reflector which covers the upper portion of the exhaust port of the exhaust unit while being spaced apart from the exhaust port, and a second reflector which surrounds the exhaust port. At least one of reflector members which form the second reflector faces a direction defined from the heating unit to the exhaust port.
摘要翻译：一种热处理装置，包括真空容器，保持安装在其上的基板的基板台，用于加热基板的加热单元和用于抽空真空容器的排气单元，包括：第一反射器，其覆盖排气口的上部的排气单元，同时与排气口间隔开;以及第二反射器，其围绕排气口。形成第二反射器的反射器构件中的至少一个面向从加热单元限定到排气口的方向。

5. 发明授权

US08426323B2 Substrate processing apparatus, substrate annealing method, and semiconductor device manufacturing method 有权
标题翻译：基板处理装置，基板退火方法以及半导体装置的制造方法
公开(公告)号：US08426323B2
公开(公告)日：2013-04-23
申请号：US12636928
申请日：2009-12-14
申请人： Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
发明人： Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
IPC分类号： H01L21/00 , B05C11/11
CPC分类号： F27B17/0025 , H01L21/67109 , H01L21/67115
摘要： A substrate processing apparatus includes a chamber capable of being evacuated, a substrate stage adapted to mount a substrate, a heating unit adapted to be set above the substrate mounting surface of the substrate stage, face the substrate mounted on at least the substrate mounting surface, and heat the substrate by radiant heat without being in contact with the substrate, a shutter adapted to be retractably inserted in the space between the heating unit and the substrate mounted on the substrate mounting surface, and a shutter driving unit adapted to extend/retract the shutter into/from the space. The substrate is mounted on the substrate stage to face the heating unit, the substrate is annealed by heating the substrate by radiant heat from the heating unit, and the shutter is extended into the space between the heating unit and the substrate stage.
摘要翻译：基板处理装置包括能够被抽真空的室，适于安装基板的基板台，适于设置在基板台的基板安装表面上方的加热单元，面对安装在至少基板安装表面上的基板，并且通过辐射热加热基板而不与基板接触，适于可缩回地插入在加热单元和安装在基板安装表面上的基板之间的空间中的闸板以及适于延伸/缩回的快门驱动单元快门进/从空间。将基板安装在基板台上以面对加热单元，通过从加热单元的辐射热加热基板来对基板进行退火，并且快门延伸到加热单元和基板台之间的空间中。

6. 发明授权

US08129663B2 Vacuum heating apparatus 有权
标题翻译：真空加热装置
公开(公告)号：US08129663B2
公开(公告)日：2012-03-06
申请号：US12483691
申请日：2009-06-12
申请人： Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
发明人： Nobuyuki Masaki , Yuichi Sasuga , Masami Shibagaki , Hiroshi Doi
IPC分类号： F27D11/00 , C23C16/00
CPC分类号： H01L21/67115
摘要： Deterioration of an O ring due to radiation heating in a vacuum heating apparatus is prevented to allow heat treatment of a substrate with good annealing properties. The vacuum heating apparatus 1 includes a vacuum chamber 2 constituted by flanges 11 and 12 having an opening portion 9 and joined together, a turbo molecular pump 17 for exhausting gas from the vacuum chamber 2, and a heater base 3 for heating a substrate 5 placed in the vacuum chamber 2. Joint surfaces of the flanges 11 and 12 are sealed by an O ring 10. Further, bonding steps 13 are formed between the heater base 3 and the O ring 10 on the joint surfaces of the flanges 11 and 12, thereby preventing thermo-radiation from the heater base 3 from reaching the O ring 10 through the joint surfaces of the flanges 11 and 12.
摘要翻译：防止由于真空加热装置中的辐射加热导致的O形环的劣化，从而允许具有良好退火性能的基板的热处理。真空加热装置1包括由具有开口部分9并连接在一起的凸缘11和12构成的真空室2，用于从真空室2排出气体的涡轮分子泵17和用于加热基板5的加热器基座3 凸缘11和12的接合表面由O形环10密封。此外，在凸缘11和12的接合表面上的加热器基座3和O形环10之间形成接合台阶13，从而防止来自加热器基座3的热辐射通过凸缘11和12的接合表面到达O形环10。

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