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1. 发明授权

US11598977B2 Spectacle lenses and methods for producing the same 有权
公开(公告)号：US11598977B2
公开(公告)日：2023-03-07
申请号：US16648766
申请日：2018-09-19
申请人： Hiroshi Asami , Yasunori Izawa
发明人： Hiroshi Asami , Yasunori Izawa
IPC分类号： G02C7/02 , G02C7/06
摘要： A lens, system for designing, computer program for designing and a method for designing, with a computer, a progressive addition lens including a distance vision region, a near vision region, and an intermediate vision region, wherein a power gradually changes between the distance vision region and the near vision region, and wherein the progressive addition lens is based on prescription data, the method including: determining a transmission astigmatic performance parameter corresponding to a sum of a prescribed astigmatism included in the prescription data and of a predetermined amount of extra astigmatism; determining lens surface data corresponding to the determined transmission performance parameter.

2. 发明授权

US11886047B2 Spectacle lenses and methods for producing the same 有权
公开(公告)号：US11886047B2
公开(公告)日：2024-01-30
申请号：US17724113
申请日：2022-04-19
申请人： Hiroshi Asami , Yasunori Izawa
发明人： Hiroshi Asami , Yasunori Izawa
IPC分类号： G02C7/06 , G02C7/02
CPC分类号： G02C7/065 , G02C7/027
摘要： A lens, system for designing, computer program for designing and a method for designing, with a computer, a progressive addition lens including a distance vision region, a near vision region, and an intermediate vision region, wherein a power gradually changes between the distance vision region and the near vision region, and wherein the progressive addition lens is based on prescription data, the method including: determining a transmission astigmatic performance parameter corresponding to a sum of a prescribed astigmatism included in the prescription data and of a predetermined amount of extra astigmatism; determining lens surface data corresponding to the determined transmission performance parameter.

3. 发明申请

US20120205817A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20120205817A1
公开(公告)日：2012-08-16
申请号：US13454139
申请日：2012-04-24
申请人： Hiroshi Asami , Masaki Hatano , Akihiro Morimoto
发明人： Hiroshi Asami , Masaki Hatano , Akihiro Morimoto
IPC分类号： H01L23/498
CPC分类号： H01L27/14636 , H01L21/486 , H01L23/49827 , H01L24/83 , H01L27/1464 , H01L27/1469 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/00 , H01L2924/01047 , H01L2924/01049 , H01L2924/01079 , H01L2924/01083 , H01L2224/13111 , H01L2924/00012 , H01L2224/13109 , H01L2924/00014
摘要： A semiconductor device including a component substrate of a semiconductor device; electrode pads provided on one surface of the component substrate; a support plate material reinforcing the component substrate; via holes made in the support plate material; a conducting material filled in the via holes; and a joining member interposed between the electrode pads and the conducting material and joining the component substrate and the support plate material.
摘要翻译：一种半导体器件，包括半导体器件的元件衬底; 设置在所述部件基板的一个表面上的电极焊盘; 增强部件基板的支撑板材料; 在支撑板材料上形成的通孔; 填充在通孔中的导电材料; 以及插入在电极焊盘和导电材料之间并将部件基板和支撑板材料接合的接合部件。

4. 发明申请

US20080283951A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080283951A1
公开(公告)日：2008-11-20
申请号：US12078894
申请日：2008-04-08
申请人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
发明人： Yoshihiro Nabe , Masaki Hatano , Hiroshi Asami , Akihiro Morimoto
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14618 , H01L21/76898 , H01L23/3677 , H01L23/481 , H01L31/0203 , H01L2224/05001 , H01L2224/05009 , H01L2224/0557 , H01L2224/05647 , H01L2224/13025 , H01L2224/16 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/16235 , H01L2924/3025 , H01L2924/00014
摘要： A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.
摘要翻译：半导体器件包括具有第一电子电路和形成在有源表面上的第二电子电路的半导体衬底，通过连接到第一电子电路和/或第二电子电路而形成在有源表面上的焊盘电极，第一开口从与半导体基板的有源面相反的表面沿着半导体基板的深度朝向焊盘电极的某一点形成第二开口，从第一开口的底面到达焊盘电极，形成绝缘体通过覆盖第一开口和第二开口的侧壁表面形成的层，通过覆盖绝缘层的至少内壁表面和第二开口的底表面形成的导电层，形成在沿着深度的某个点的第三开口的半导体衬底从与半导体衬底的有源表面相反的表面，以及绝热体imb 在第三次开幕。

5. 发明申请

US20070287265A1 Substrate treating method and method of manufacturing semiconductor apparatus 有权
标题翻译：基板处理方法及制造半导体装置的方法
公开(公告)号：US20070287265A1
公开(公告)日：2007-12-13
申请号：US11799023
申请日：2007-04-30
申请人： Masaki Hatano , Hiroshi Asami
发明人： Masaki Hatano , Hiroshi Asami
IPC分类号： H01L21/304
CPC分类号： H01L21/76898 , H01L21/6835 , H01L24/73 , H01L24/96 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68345 , H01L2224/04105 , H01L2224/05001 , H01L2224/05009 , H01L2224/05568 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73207 , H01L2224/73265 , H01L2224/97 , H01L2225/06513 , H01L2225/06541 , H01L2225/06582 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/181 , H01L2924/18161 , H01L2924/19043 , H01L2924/3511 , H01L2224/81 , H01L2924/00012 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The present invention provides a substrate treating method including the steps of joining a one-side surface of a substrate to be treated to a support substrate, treating the substrate to be treated in the condition where the substrate to be treated is supported by the support substrate, and removing the support substrate from the substrate to be treated. The step of joining the substrate to be treated to the support substrate includes melting a joint bump formed on the substrate to be treated so as to join the substrate to be treated to the support substrate, and the step of removing the support substrate from the substrate to be treated includes polishing the support substrate so as to remove the support substrate.
摘要翻译：本发明提供了一种基板处理方法，包括以下步骤：将待处理基板的单面表面连接到支撑基板上，在被处理基板被支撑基板支撑的状态下处理待处理基板从待处理的基板上除去支撑基板。将待处理基板接合到支撑基板的步骤包括熔化形成在待处理基板上的接合凸起，以将待处理的基板接合到支撑基板，以及从基板移除支撑基板的步骤待处理包括抛光支撑基板以移除支撑基板。

6. 发明申请

US20060124345A1 Method for manufacturing board with built-in device and board with built-in device and method for manufacturing printed wiring board and printed wiring board 有权
标题翻译：具有内置装置的板的制造方法和用于制造印刷线路板和印刷线路板的内置装置和方法
公开(公告)号：US20060124345A1
公开(公告)日：2006-06-15
申请号：US10523331
申请日：2003-06-20
申请人： Hiroshi Asami , Orui Ken , Kusano Hidetoshi , Fumito Hiwatashi
发明人： Hiroshi Asami , Orui Ken , Kusano Hidetoshi , Fumito Hiwatashi
IPC分类号： H05K1/00 , H05K3/30 , H05K3/10
CPC分类号： H05K1/187 , H01L21/6835 , H01L23/3128 , H01L23/3157 , H01L23/49816 , H01L24/10 , H01L24/13 , H01L24/24 , H01L24/81 , H01L24/97 , H01L25/105 , H01L2221/68345 , H01L2221/68377 , H01L2224/13 , H01L2224/13111 , H01L2224/13144 , H01L2224/16237 , H01L2224/24227 , H01L2224/8121 , H01L2224/81815 , H01L2224/83192 , H01L2224/97 , H01L2225/1035 , H01L2225/1058 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/12042 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/15331 , H01L2924/19041 , H01L2924/19043 , H01L2924/3511 , H05K3/205 , H05K3/386 , H05K3/4614 , H05K3/4617 , H05K2201/0394 , H05K2201/10674 , H05K2203/063 , Y10T29/49128 , Y10T29/4913 , Y10T29/49144 , Y10T29/49146 , Y10T29/49155 , Y10T29/49165 , H01L2924/00
摘要： A device-incorporated substrate and a method of manufacturing a device-incorporated substrate, as well as a printed circuit board and a method of manufacturing a printed circuit board in which a fine-pitch conductor pattern can be formed on an insulating layer with high precision while securing the dimensional stability of the conductor pattern, are provided. A transfer sheet (61) has a structure that includes two layers, a metal base material (62) and a dissolvee metal layer (64), and a conductor pattern (55) is formed on the dissolvee metal layer (64) through electroplating. Then, after the transfer sheet (61) on which the conductor pattern (55) is formed is adhered onto an insulating base material (51), the transfer sheet (61) is removed through a step of separating the metal base material (62) from the dissolvee metal layer (64), and a step of selectively dissolving and removing the dissolvee metal layer (64) with respect to the conductor pattern (55).
摘要翻译：一种基于器件的衬底和一种制造器件结合衬底的方法，以及印刷电路板和制造印刷电路板的方法，其中可以在绝缘层上以高精度形成精细间距导体图案同时确保导体图案的尺寸稳定性。转印片（61）具有包括金属基材（62）和溶解金属层（64）的两层的结构，并且通过电镀在溶解金属层（64）上形成导体图案（55）。然后，在其上形成有导体图案（55）的转印片（61）粘附到绝缘基材（51）上之后，通过分离金属基材（62）的步骤去除转印片（61）从所述溶解金属层（64）和相对于所述导体图案（55）选择性地溶解和除去所述溶解金属层（64）的步骤。

7. 再颁专利

USRE38617E1 Method of injection molding plastic lens 有权
标题翻译：注塑塑料镜片的方法
公开(公告)号：USRE38617E1
公开(公告)日：2004-10-12
申请号：US09985910
申请日：2001-11-06
申请人： Kiyohiro Saito , Hiroshi Asami
发明人： Kiyohiro Saito , Hiroshi Asami
IPC分类号： B29D1100
摘要： A cavity 22 in an injection molding assembly includes a lower mold insert 21 for shaping a lens convex surface and an upper mold insert 20 for shaping a lens concave surface. When the heated injection molding assembly is cooled and a lens is ejected after a molten resin is pressurized by the upper mold insert 20, the temperature of the lower mold insert 21 is lowered below the temperature of the upper mold insert 20, which prevents the molded lens from bending at a central portion and enable high transfer precision of insert shapes.

8. 发明授权

US5972252A Injection compression molding method of a spectacle lens and a spectacle lens produced by using the same 失效
标题翻译：眼镜片的注射压缩成型方法和使用该眼镜片的眼镜片
公开(公告)号：US5972252A
公开(公告)日：1999-10-26
申请号：US758705
申请日：1996-12-03
申请人： Kiyohiro Saito , Tatsuo Nishimoto , Hiroshi Asami
发明人： Kiyohiro Saito , Tatsuo Nishimoto , Hiroshi Asami
IPC分类号： B29C45/56 , B29D11/00
CPC分类号： B29D11/00413 , B29C45/561 , B29C2045/5615 , B29C2045/5625 , B29L2011/0016 , Y10S425/808
摘要： In an injection compression molding method of a lens, in which a mold is closed to preserve a predetermined compressing margin in a cavity 3 for a lens, molten resin is injected and fed into the cavity 3 for the lens, and compressed for the aforementioned predetermined compressing margin before or after the injection and the feed of the molten resin is completed, the predetermined compressing margin (the degree of slightly opening S.sub.(-)) for producing a minus lens is molded is defined to be larger than the predetermined compressing margin (the degree of slightly opening S.sub.(+)) for producing a plus lens is molded. As a result, even when the minus lens is molded, the larger area of the cavity can be ensure and a flow property of the molten resin in the cavity is improved, so that the molten resin reached the inside of the cavity 3 flow through the central portion of the cavity 3 into the peripheral portion, with the result that the appearance of a weld mark in the central portion is avoided.
摘要翻译：在透镜的注射压缩成型方法中，其中模具闭合以在透镜的空腔3中保持预定的压缩边缘，将熔融树脂注入并馈送到用于透镜的空腔3中，并压缩以用于上述预定的在注射之前或之后压缩边缘并且熔融树脂的进料完成，用于制造负透镜的预定压缩边缘（稍微开口的程度S（ - ））被定义为大于预定的压缩边缘（成型用于制造正镜片的稍微开口的程度S（+））。结果，即使在模制成负透镜的情况下，可以确保空腔的较大面积，并且提高熔融树脂在空腔中的流动性，使得到达空腔3的内部的熔融树脂流过空腔3的中心部分进入周边部分，结果避免了在中心部分出现焊接痕迹。

9. 发明授权

US4831845A Temperature testing device provided with sample-receiving chamber from which a specimen is easily detachable and in which temperature is controllable 失效
标题翻译：设置有样品容纳室的温度测试装置，其中样品容易拆卸并且其中温度是可控的
公开(公告)号：US4831845A
公开(公告)日：1989-05-23
申请号：US234410
申请日：1988-08-19
申请人： Yasukage Oda , Hiroshi Asami
发明人： Yasukage Oda , Hiroshi Asami
IPC分类号： B01L7/00 , B01L7/04 , G01N25/12
CPC分类号： G01N25/12
摘要： A temperature testing device in which a sample-receiving sealable chamber from which a specimen can be easily detached and a cooling portion of a refrigeration unit are inserted into a single vacuum vessel, and in which a gaseous refrigerant is circulated between the cooling portion of the refrigeration unit and the sample-receiving chamber so that the sample-receiving chamber can be cooled.

10. 发明授权

US10401649B2 Method of designing progressive refractive power lens, and lens set 有权
$Method of designing progressive refractive power lens, and lens set$
公开(公告)号：US10401649B2
公开(公告)日：2019-09-03
申请号：US15576262
申请日：2016-05-26
申请人： HOYA LENS THAILAND LTD. , Hiroshi Asami , Ayumu Ito
发明人： Hiroshi Asami , Ayumu Ito
IPC分类号： G02C7/02 , G02C7/06
摘要： When an addition power at a position corresponding to a fitting point within a prescription addition power is greater than a target addition power set according to a target distance, the target addition power is set as an addition power between a progression-start point and a progression-end point on a principal meridian, and in addition the average gradient of an addition power between the progression-start point and the fitting point is set to differ from an average gradient of an addition power between the fitting point and the progression-end point. When the addition power at the position corresponding to the fitting point within the prescription addition power is equal to or smaller than the target addition power, a gradient of the addition power is made constant in a partial region including at least the fitting point between the progression-start point and the progression-end point on the principal meridian.

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