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    • 7. 发明授权
    • Sapphireless group III nitride semiconductor and method for making same
    • 无蓝宝石III族氮化物半导体及其制造方法
    • US5620557A
    • 1997-04-15
    • US494846
    • 1995-06-26
    • Katsuhide ManabeMasayoshi KoikeHisaki KatoNorikatsu KoideIsamu AkasakiHiroshi Amano
    • Katsuhide ManabeMasayoshi KoikeHisaki KatoNorikatsu KoideIsamu AkasakiHiroshi Amano
    • C30B25/02H01L33/32H01L21/00
    • C30B25/02C30B29/403C30B29/406H01L33/007H01L33/0075Y10S117/915
    • A method of manufacturing two sapphireless layers (3a, 3b) at one time made of Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, and a LED (10) utilizing one of the semiconductor layers (3a, 3b) as a substrate (3) includes the steps of forming two zinc oxide (ZnO) intermediate layers (2a, 2b) on each side of a sapphire substrate (1), forming two Group III nitride compound semiconductor layers (3a, 3b) satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0, each laminated on each of the intermediate ZnO layers (2a, 2b), and separating the intermediate ZnO layers (2a, 2b) from the sapphire substrate (1) by etching with an etching liquid only for the ZnO layers (2a, 2b). At least one of the so-obtained Group III nitride compound layers is provided with n and p MOVPE layers (4, 5) formed thereon with electrodes (6, 7) on opposite sides to form an LED emitting in the 450 nm region and having a low device resistance.
    • 一次由满足公式Al x Ga y In 1-x-y N的III族氮化物化合物半导体制造两个蓝宝石层(3a,3b)的方法,包括x = 0,y = 0和x = y = 0,以及 利用半导体层(3a,3b)之一作为基板(3)的LED(10)包括在蓝宝石基板(1)的每一侧上形成两个氧化锌(ZnO)中间层(2a,2b)的步骤, 形成满足式Al x Ga y In 1-x-y N的两个III族氮化物化合物半导体层(3a,3b),包括x = 0,y = 0和x = y = 0,各层叠在每个中间ZnO层 ,2b),并且通过仅用于ZnO层(2a,2b)的蚀刻液蚀刻从中分离出中间ZnO层(2a,2b)和蓝宝石衬底(1)。 如此获得的III族氮化物化合物层中的至少一个设置有在其上形成有电极(6,7)的相对侧上的n和p个MOVPE层(4,5),以形成在450nm区域中发射的LED,并且具有 器件电阻低。
    • 10. 发明授权
    • Gallium nitride group compound semiconductor
    • 氮化镓族化合物半导体
    • US06472690B1
    • 2002-10-29
    • US09677789
    • 2000-10-02
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • Katsuhide ManabeAkira MabuchiHisaki KatoMichinari SassaNorikatsu KoideShiro YamazakiMasafumi HashimotoIsamu Akasaki
    • H01L3300
    • H01L33/32H01L33/007H01L33/025
    • Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
    • 这里公开的是(1)使用其中n型氮化镓化合物半导体(Al x Ga 1-x N)的n层是双层结构的氮化镓化合物半导体(Al x Ga 1-x N)的发光半导体器件,包括 低载流子浓度的n层和高载流子浓度的n +层,前者与绝缘的氮化镓化合物半导体(Al x Ga 1-x N)的i层相邻; (2)具有上述类似结构的发光半导体器件,其中i层是双层结构,其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度,前者与n层相邻; (3)具有上述特征的发光半导体器件和(4)由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体(Al x Ga 1-x N)的层的制造方法, 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。