专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5066553A Surface-coated tool member of tungsten carbide based cemented carbide 失效
标题翻译：基于碳化钨的碳化硅表面涂层工具
公开(公告)号：US5066553A
公开(公告)日：1991-11-19
申请号：US507665
申请日：1990-04-10
申请人： Hironori Yoshimura , Yoshihiro Sawada , Kei Nakahara , Hitoshi Kunugi , Keiichi Sakurai
发明人： Hironori Yoshimura , Yoshihiro Sawada , Kei Nakahara , Hitoshi Kunugi , Keiichi Sakurai
IPC分类号： C23C30/00
CPC分类号： C23C30/005 , Y10S76/11 , Y10T407/27 , Y10T428/24942 , Y10T428/265 , Y10T428/30
摘要： There is disclosed a surface-coated tool member of tungsten carbide based cemented carbide which has a tungsten carbide based cemented carbide substrate and a hard coating formed on the substrate. The hard coating may have one or more layers each of which is made of one material selected from the group consisting of carbide, nitride and oxide of metals in groups IV.sub.A, V.sub.A and VI.sub.A of the Periodic Table; solid solution of said carbide, nitride and oxide; and aluminum oxide. The cobalt content of the substrate in a surface portion at a depth of about 2 .mu.m from a surface thereof is less than that in an interior portion at a depth of about 100 .mu.m from said surface by at least 10%.

2. 发明授权

US08367312B2 Detergent for lithography and method of forming resist pattern with the same 失效
标题翻译：光刻用洗涤剂及其形成抗蚀剂图案的方法
公开(公告)号：US08367312B2
公开(公告)日：2013-02-05
申请号：US12087545
申请日：2006-12-08
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Hidekazu Tajima , Atsushi Miyamoto , Tomoya Kumagai , Atsushi Sawano
IPC分类号： C11D7/32 , C11D1/75
CPC分类号： G03F7/322
摘要： Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.
摘要翻译：含有表面活性剂作为活性成分的常规的光刻用洗涤剂应具有降低的表面活性剂浓度，因为增加的表面活性剂浓度导致光致抗蚀剂组合物的树脂组分的溶解，并因此导致抗蚀剂图案的尺寸变化。然而，常规洗涤剂具有这样的缺点：这种低浓度不可避免地降低了抑制图案下落和缺陷发生的能力。提供了一种用于光刻的洗涤剂，其是含有（A）至少一种选自含氮阳离子表面活性剂和含氮两性表面活性剂中的成分的水溶液和（B）阴离子表面活性剂。这种洗涤剂即使在低浓度时也保持低的表面张力。有效抑制图形下降和缺陷发生。它也可以抑制抗蚀剂图案的波动。

3. 发明申请

US20120084034A1 NON-TRANSITORY COMPUTER-READABLE MEDIUM STORING DESIGN CHECK PROGRAM, DESIGN CHECK APPARATUS, AND DESIGN CHECK METHOD 审中-公开
标题翻译：非终端计算机可读介质存储设计检查程序，设计检查设备和设计检查方法
公开(公告)号：US20120084034A1
公开(公告)日：2012-04-05
申请号：US13237019
申请日：2011-09-20
申请人： Yoshiaki Hiratsuka , Yoshihiro Sawada , Kenji Nagase , Tomoyuki Nakao , Keisuke Nakamura
发明人： Yoshiaki Hiratsuka , Yoshihiro Sawada , Kenji Nagase , Tomoyuki Nakao , Keisuke Nakamura
IPC分类号： G06F19/00
CPC分类号： G06F17/5081 , G06F17/5036 , G06F2217/82 , H05K1/023 , H05K3/0005
摘要： A design check method executed by a computer includes determining a countermeasure component provided in a certain range from a terminal of a reference component, determining whether a terminal of the determined countermeasure component is electrically connected to the terminal of the reference component, and determining that the countermeasure component is suitably mounted when the terminal of the determined countermeasure component that is electrically connected to the terminal of the reference component is at least within the certain range.
摘要翻译：由计算机执行的设计检查方法包括从参考部件的终端确定在一定范围内提供的对策部件，确定所确定的对策部件的终端是否电连接到所述参考部件的终端，以及确定当与参考部件的端子电连接的所确定的对策部件的端子至少在一定范围内时，适当地安装对策部件。

4. 发明申请

US20080096141A1 Cleaning Liquid For Lithography And Method For Resist Pattern Formation 有权
标题翻译：用于平版印刷的清洁液和抗蚀剂图案形成方法
公开(公告)号：US20080096141A1
公开(公告)日：2008-04-24
申请号：US11791723
申请日：2005-11-29
申请人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
发明人： Yoshihiro Sawada , Kazumasa Wakiya , Jun Koshiyama , Atsushi Miyamoto , Hidekazu Tajima
IPC分类号： G03C5/56 , G03C11/00
CPC分类号： G03F7/40
摘要： This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.
摘要翻译：本发明提供了一种用于光刻的新型清洁液，其用于光致抗蚀剂图案，用于减少产品的表面缺陷，即产品的缺陷，防止水洗过程中的图案塌陷，并进一步赋予抗蚀剂电子束照射抗力抑制图案收缩。此外，在用于光刻的新型清洁液中，在储存期间不会发生细菌污染。用于光刻的清洁液包含含有由通式表示的氧化胺化合物的水溶液，其中R 1表示可被氧原子中断的具有8至20个碳原子的烷基或羟烷基; R 2和R 3代表具有1至5个碳原子的烷基或羟烷基。

5. 发明授权

US5976705A Ferroelectric thin film, making method thereof and coating liquid for making thin film 失效
标题翻译：铁电薄膜，其制造方法和用于制造薄膜的涂布液
公开(公告)号：US5976705A
公开(公告)日：1999-11-02
申请号：US768293
申请日：1996-12-17
申请人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
发明人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
IPC分类号： C04B35/48 , C04B35/622 , H01B3/00 , H01B3/12 , H01L21/02 , H01L21/314 , H01L21/316 , B32B17/00
CPC分类号： H01L21/31691 , C04B35/62218 , H01L28/56
摘要： An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0
摘要翻译：本发明的目的是降低施加电压时的Pb Zr Ti O系铁电薄膜的漏电流。本文提供了包含PbZrxTi1-xSbyO3（其中0

6. 发明申请

US20110061678A1 Cleaning liquid for lithography and a cleaning method using it for photoexposure devices 有权
公开(公告)号：US20110061678A1
公开(公告)日：2011-03-17
申请号：US12801529
申请日：2010-06-14
申请人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
发明人： Jun Koshiyama , Yoshihiro Sawada , Jiro Yokoya , Tomoyuki Hirano
IPC分类号： B08B7/00 , C11D3/44
CPC分类号： C11D3/43 , C11D1/66 , C11D1/667 , C11D1/72 , C11D3/18 , C11D3/181 , C11D3/182 , C11D3/184 , C11D3/188 , G03F7/2041 , G03F7/70341 , G03F7/70925 , G03F7/70983
摘要： Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production.Means for Solution: A cleaning liquid for photolithography to be used for cleaning a photoexposure device in a process of liquid immersion lithography that comprises filling the space between the optical lens member of a photoexposure device and an object for photoexposure mounted on the wafer stage, with a medium for liquid immersion lithography, the cleaning liquid comprising (a) a surfactant, (b) a hydrocarbon solvent, and (c) water; and a cleaning method using it for photoexposure devices.

7. 发明申请

US20080026975A1 Rinsing Fluid for Lithography 失效
标题翻译：用于平版印刷的冲洗液
公开(公告)号：US20080026975A1
公开(公告)日：2008-01-31
申请号：US11587268
申请日：2005-04-20
申请人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Fumitake Kaneko , Atsushi Miyamoto , Hidekazu Tajima , Yoshihiro Sawada
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/32 , C11D3/245 , C11D3/349 , C11D11/0041 , G03F7/322
摘要： The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products. The rinsing fluid consists of a solution containing at least one fluorine compound soluble in water or alcoholic solvents which is selected from among compounds represented by the general formula (I), those represented by the general formula (II), and those represented by the general formula: Rf′—COOH: wherein R1 and R2 are each optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine, or R1 and R2 together with the SO2 groups to which they are bonded and the nitrogen atom may form a five- or six-membered ring; Rf is optionally substituted C1-5 alkyl whose hydrogen atoms are partially or wholly replaced by fluorine; m and n are each an integer of 2 or 3; and Rf′ is at least partially fluorinated alkyl having 8 to 20 carbon atoms.
摘要翻译：本发明提供了一种新颖的冲洗液，其可以将具有40°或更低接触角的容易润湿的抗蚀剂图案表面转变成接触角为70°或更高的接触角，以有效抑制图案塌陷，从而产生高质量的产品。冲洗液由含有至少一种可溶于水的氟化合物或醇溶剂的溶液组成，所述氟化合物选自由通式（I）表示的化合物，由通式（II）表示的化合物和由通式其中R 1和R 2各自是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代的烷基，或R 1和R 2与它们所键合的SO 2 H 2基团一起并且氮原子可以形成五元或六元环; R f是任选取代的C 1-5烷基，其氢原子部分或全部被氟取代; m和n分别为2或3的整数; 且R f'是至少部分氟化的具有8至20个碳原子的烷基。

8. 发明申请

US20070292808A1 Developing Solution Composition for Lithography and Method for Resist Pattern Formation 审中-公开
标题翻译：开发用于平版印刷的溶液组合物和抗蚀剂图案形成方法
公开(公告)号：US20070292808A1
公开(公告)日：2007-12-20
申请号：US11661317
申请日：2005-08-29
申请人： Jun Koshiyama , Kazumasa Wakiya , Yoshihiro Sawada
发明人： Jun Koshiyama , Kazumasa Wakiya , Yoshihiro Sawada
IPC分类号： G03F7/32 , H01L21/027
CPC分类号： G03F7/322
摘要： This invention provides a novel developing solution composition for lithography, which can efficiently reduce defects without varying the formulation of a resist composition per se and without sacrificing the quality of a resist pattern by the use thereof, and a novel method for resist pattern formation using the developing solution composition, which can reduce the occurrence of defects and can be combined with subsequent specific rinsing liquid treatment to control pattern collapse. The developing solution composition comprises a solution containing tetraalkylammonium hydroxide and at least one polymer selected from water soluble or alkali soluble polymers comprising monomer constituent units with a nitrogen-containing heterocyclic ring. A resist pattern is formed by the following steps: (1) the step of providing a resist film on a substrate; (2) the step of selectively exposing the resist film thorough a mask pattern; (3) the step of heating the film after exposure; and (4) the step of developing the film with the above composition.
摘要翻译：本发明提供了一种用于光刻的新颖的显影液组合物，其可以有效地减少缺陷，而不改变抗蚀剂组合物本身的配方，而不会因其使用而牺牲抗蚀剂图案的质量，并且使用这种方法开发溶液组合物，其可以减少缺陷的发生，并且可以与随后的特定漂洗液处理结合以控制图案崩溃。显影溶液组合物包含含有四烷基氢氧化铵和至少一种选自包含含有含氮杂环的单体构成单元的水溶性或碱溶性聚合物的聚合物的溶液。通过以下步骤形成抗蚀剂图案：（1）在基板上设置抗蚀剂膜的步骤; （2）通过掩模图案选择性地曝光抗蚀剂膜的步骤; （3）曝光后加热薄膜的步骤; 和（4）用上述组合物显影薄膜的步骤。

9. 发明授权

US06403160B1 Ferroelectric thin film, production method thereof and coating liquid for making thin film 失效
标题翻译：铁电薄膜，其制造方法和制造薄膜的涂布液
公开(公告)号：US06403160B1
公开(公告)日：2002-06-11
申请号：US09389484
申请日：1999-09-03
申请人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
发明人： Ichiro Koiwa , Juro Mita , Takao Kanehara , Akira Hashimoto , Yoshihiro Sawada
IPC分类号： B05D302
CPC分类号： H01L21/31691 , C04B35/62218 , H01L28/56
摘要： An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZrxTi1−xSbyO3 (where 0
摘要翻译：本发明的目的是降低施加电压时的Pb Zr Ti O系铁电薄膜的漏电流。提供了包含PbZr x Ti 1-x S y O 3（其中0

10. 发明授权

US06197102B1 Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof 失效
标题翻译：用于形成铋基铁电薄膜的涂布溶液以及由所述涂布溶液形成的铁电薄膜，铁电电容器和铁电存储体以及其制备方法
公开(公告)号：US06197102B1
公开(公告)日：2001-03-06
申请号：US09008245
申请日：1998-01-15
申请人： Yoshihiro Sawada , Akira Hashimoto , Ichiro Koiwa , Juro Mita , Yukihisa Okada , Takao Kanehara , Hiroyo Kato
发明人： Yoshihiro Sawada , Akira Hashimoto , Ichiro Koiwa , Juro Mita , Yukihisa Okada , Takao Kanehara , Hiroyo Kato
IPC分类号： C09K300
CPC分类号： H01L21/02197 , C01G33/006 , C01G35/006 , C01P2002/72 , C01P2002/85 , C01P2004/80 , C01P2006/40 , C23C16/40 , C23C16/448 , H01L21/02282 , H01L21/31691 , H01L28/55
摘要： The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (5), a ferroelectric capacitor (10) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.
摘要翻译：本发明公开了一种用于形成含有Bi，金属元素A（选自Bi，Pb，Ba，Sr，Ca，Na，K和稀土元素中的至少一种）的Bi基铁电薄膜的涂布溶液，和金属元素B（选自Ti，Nb，Ta，W，Mo，Fe，Co和Cr中的至少一种），其中分别含有Bi的金属醇盐，金属元素A和金属元素B，通过将由任意两种以上的所述金属醇盐形成的复合金属醇盐与单独的水或与催化剂组合水解而得到的有机金属化合物，并且含有摩尔量为化学计量量的1-1.1倍摩尔量的Bi; 铁电薄膜（5），铁电电容器（10）和使用这种涂布液的铁电存储器; 及其制造方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式