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1. 发明授权

US08772785B2 Semiconductor device, schottky barrier diode, electronic apparatus, and method of producing semiconductor device 有权
标题翻译：半导体器件，肖特基势垒二极管，电子器件，以及半导体器件的制造方法
公开(公告)号：US08772785B2
公开(公告)日：2014-07-08
申请号：US13141448
申请日：2009-11-26
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
IPC分类号： H01L29/15
CPC分类号： H01L29/872 , H01L29/08 , H01L29/2003 , H01L29/475
摘要： A semiconductor device includes semiconductor layers, an anode electrode, and a cathode electrode. The semiconductor layers include a composition change layer, the anode electrode is electrically connected to one of principal surfaces of the composition change layer through a formation of a Schottky junction between the anode electrode and a part of the semiconductor layers, the cathode electrode is electrically connected to the other of the principal surfaces of the composition change layer through a formation of a junction between the cathode electrode and another part of the semiconductor layers, the anode electrode and the cathode electrode are capable of applying a voltage to the composition change layer in a direction perpendicular to the principal surface.
摘要翻译：半导体器件包括半导体层，阳极电极和阴极电极。半导体层包括组成变化层，阳极电极通过在阳极电极和一部分半导体层之间形成肖特基结而与组合物变化层的主表面电连接，阴极电连接通过在阴极电极和另一部分半导体层之间形成接合而形成组合物变化层的另一个主表面，阳极电极和阴极电极能够向组合物变化层施加电压方向垂直于主表面。

2. 发明申请

US20130069071A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130069071A1
公开(公告)日：2013-03-21
申请号：US13553759
申请日：2012-07-19
申请人： Takashi Inoue , Tatsuo Nakayama , Yasuhiro Okamoto , Hironobu Miyamoto
发明人： Takashi Inoue , Tatsuo Nakayama , Yasuhiro Okamoto , Hironobu Miyamoto
IPC分类号： H01L29/778 , H01L29/205
CPC分类号： H01L29/778 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/205 , H01L29/4236 , H01L29/432 , H01L29/517 , H01L29/66431 , H01L29/66462 , H01L29/7783
摘要： Compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer. Therefore, negative charge is higher than positive charge at the interface between the cap layer and the barrier layer and the interface between the channel layer and the buffer layer, while positive charge is higher than negative charge at the interface between the barrier layer and the channel. The channel layer has a stacked layer structure of a first layer, a second layer, and a third layer. The second layer has a higher electron affinity than those of the first layer and the third layer.
摘要翻译：在帽层和阻挡层之间的界面处产生压缩应变，并且在沟道层和缓冲层之间的界面处产生压缩应变，并且在阻挡层和沟道层之间的界面处产生拉伸应变。因此，负电荷高于帽层和阻挡层之间的界面处的正电荷以及沟道层与缓冲层之间的界面，而正电荷高于阻挡层和沟道之间的界面处的负电荷。沟道层具有第一层，第二层和第三层的堆叠层结构。第二层比第一层和第三层具有更高的电子亲和力。

3. 发明申请

US20110297954A1 SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，肖特基二极管二极管，电子设备和生产半导体器件的方法
公开(公告)号：US20110297954A1
公开(公告)日：2011-12-08
申请号：US13141448
申请日：2009-11-26
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Kazuomi Endo
IPC分类号： H01L29/20 , H01L21/329
CPC分类号： H01L29/872 , H01L29/08 , H01L29/2003 , H01L29/475
摘要： [Problem to be Solved] Provided is a semiconductor device in which the trade-off between the pressure resistance and the on-state resistance is improved and the performance is improved.[Solution] The semiconductor device 1 of the present invention comprises semiconductor layers 20 to 23, an anode electrode 12, and a cathode electrode 13, wherein the semiconductor layers include a composition change layer 23, the anode electrode 12 is electrically connected to one of principal surfaces of the composition change layer through a formation of a Schottky junction between the anode electrode 12 and a part of the semiconductor layers, the cathode electrode 13 is electrically connected to the other of the principal surfaces of the composition change layer through a formation of a junction between the cathode electrode 13 and another part of the semiconductor layers, the anode electrode 12 and the cathode electrode 13 are capable of applying a voltage to the composition change layer 23 in a direction perpendicular to the principal surface, andthe composition change layer 23 has composition that changes from a cathode electrode 13 side toward an anode electrode 12 side in the direction perpendicular to the principal surface of the composition change layer, has a negative polarization charge that is generated due to the composition that changes, and contains a donor impurity.
摘要翻译： [待解决的问题]提供了一种半导体器件，其中改善了耐压性和通态电阻之间的折衷，并提高了性能。 [解决方案]本发明的半导体器件1包括半导体层20至23，阳极电极12和阴极电极13，其中半导体层包括组成变化层23，阳极电极12电连接到通过在阳极12和半导体层的一部分之间形成肖特基结，组成变化层的主表面通过形成阴极电极13而与组合物改变层的另一个主表面电连接阴极电极13和半导体层的另一部分之间的接合点，阳极电极12和阴极电极13能够在垂直于主表面的方向上向组合物变化层23施加电压，并且组成变化层 23具有从阴极电极13侧向阳极电极12侧变化的组成具有垂直于组成变化层的主表面的方向具有由于组成变化而产生并且包含施主杂质的负极化电荷。

4. 发明授权

US07973335B2 Field-effect transistor having group III nitride electrode structure 失效
标题翻译：具有III族氮化物电极结构的场效应晶体管
公开(公告)号：US07973335B2
公开(公告)日：2011-07-05
申请号：US10538739
申请日：2003-12-15
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
IPC分类号： H01L31/072
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： A field plate portion (5) overhanging a drain side in a visored shape is formed in a gate electrode (2). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed beneath the field plate portion (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered therewith.
摘要翻译：在栅电极（2）中形成有以遮挡形状突出于漏极侧的场板部（5）。在场板部（5）的下方形成有SiN膜（21）和SiO 2膜（22）的多层膜。形成SiN膜（21），使得AlGaN电子供给层（13）的表面被覆盖。

5. 发明申请

US20110006346A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110006346A1
公开(公告)日：2011-01-13
申请号：US12919640
申请日：2009-03-12
申请人： Yuji Ando , Yasuhiro Okamoto , Kazuki Ota , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
发明人： Yuji Ando , Yasuhiro Okamoto , Kazuki Ota , Takashi Inoue , Tatsuo Nakayama , Hironobu Miyamoto
IPC分类号： H01L29/737
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/4236 , H01L29/518 , H01L29/7785
摘要： The present invention provides a semiconductor device that has high electron mobility while reducing a gate leakage current, and superior uniformity and reproducibility of the threshold voltage, and is also applicable to the enhancement mode type. The semiconductor device according to the present invention is a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, there is provided a semiconductor device that has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current and high electron mobility, and thereby, is capable of operation in enhancement mode.
摘要翻译：本发明提供了一种在降低栅极漏电流的同时具有高电子迁移率并具有优异的阈值电压的均匀性和再现性的半导体器件，并且也适用于增强型。根据本发明的半导体器件是具有这样的结构的半导体器件，该半导体器件通过顺序地层叠由晶格弛豫的Al x Ga 1-x N（0＆lt; n 1; x＆n 1; 1）构成的下阻挡层，由InyGa1-yN（0＆ ; y＆nlE; 1）具有压应变和由AlzGa1-zN（0＆amp; nlE; z＆nlE; 1）组成的接触层，其中在所述In y Ga 1-y N沟道层的界面附近产生二维电子气体与所述AlzGa1 -zN接触层通过介入绝缘膜形成嵌入在凹陷部分中的栅电极，该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成，直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。因此，提供了具有优异的阈值电压的均匀性和再现性的半导体器件，同时保持低栅极漏电流和高电子迁移率，从而能够在增强模式下操作。

6. 发明申请

US20090267114A1 FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管
公开(公告)号：US20090267114A1
公开(公告)日：2009-10-29
申请号：US12295104
申请日：2007-03-23
申请人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota , Yasuhiro Murase , Naotaka Kuroda
发明人： Tatsuo Nakayama , Yuji Ando , Hironobu Miyamoto , Yasuhiro Okamoto , Takashi Inoue , Kazuki Ota , Yasuhiro Murase , Naotaka Kuroda
IPC分类号： H01L29/772 , H01L29/205
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/42316 , H01L29/66462 , H01L29/8128
摘要： A field effect transistor 100 includes a group III-V nitride semiconductor layer structure containing a hetero junction, a source electrode 105 and a drain electrode 106 formed on the group III-V nitride semiconductor layer structure to be spaced apart from each other; a gate electrode 110 arranged between the source electrode 105 and the drain electrode 106, and an insulating layer 107 provided over, and in contact with, the group III-V nitride semiconductor layer structure in a region between the gate electrode 110 and the drain electrode 106 or in a region between the source electrode 105 and the gate electrode 110. A portion of the gate electrode 110 is buried in the group III-V nitride semiconductor layer structure, and a side edge of the gate electrode in an interface of the group III-V nitride semiconductor layer and the insulating layer 107 is spaced apart from the gate electrode 110.
摘要翻译：场效应晶体管100包括在III-V族氮化物半导体层结构上彼此间隔开的含有异质结的III-V族氮化物半导体层结构，源电极105和漏电极106。布置在源电极105和漏电极106之间的栅电极110以及在栅电极110和漏电极之间的区域中设置在III-V族氮化物半导体层结构上并与III-V族氮化物半导体层结构接触的绝缘层107 106或源极电极105和栅电极110之间的区域中。栅电极110的一部分被掩埋在III-V族氮化物半导体层结构中，并且栅极电极在该组的界面中的侧边缘 III-V族氮化物半导体层和绝缘层107与栅电极110间隔开。

7. 发明申请

US20070164326A1 Field effect transistor 审中-公开
标题翻译：场效应晶体管
公开(公告)号：US20070164326A1
公开(公告)日：2007-07-19
申请号：US10588775
申请日：2005-02-21
申请人： Yasuhiro Okamoto , Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Takashi Inque , Masaaki Kuzuhara
发明人： Yasuhiro Okamoto , Yuji Ando , Hironobu Miyamoto , Tatsuo Nakayama , Takashi Inque , Masaaki Kuzuhara
IPC分类号： H01L29/76
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/42316 , H01L29/7787
摘要： A field effect transistor includes a semiconductor layer structure including GaN channel layer 12 and AlGa electron supply layer 13, source electrode 1 and drain electrode 3 which are formed on electron supply layer 13 so as to be separated from each other, gate electrode 2 formed between source electrode 1 and drain electrode 3, and SiON film 23 formed on electron supply layer 13. Gate electrode 2 has a field plate portion 5 that projects toward drain electrode 3 in the form of an eave on SiON film 23. The thickness of a portion (field plate layer 23a) of SiON film 23 lying between field plate portion 5 and electron supply layer 13 gradually increases from gate electrode 2 to drain electrode 3.
摘要翻译：场效应晶体管包括：半导体层结构，包括形成在电子供给层13上的GaN沟道层12和AlGa电子供给层13，源电极1和漏电极3，栅电极2形成在源电极1和漏电极3以及形成在电子供给层13上的SiON膜23。栅电极2具有在SiON膜23上以檐形式向漏电极3突出的场板部5。位于场板部5与电子供给层13之间的SiON膜23的一部分（场板层23a）的厚度从栅电极2逐渐增加到漏电极3。

8. 发明申请

US20060043415A1 Field-effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US20060043415A1
公开(公告)日：2006-03-02
申请号：US10541583
申请日：2003-12-15
申请人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
发明人： Yasuhiro Okamoto , Hironobu Miyamoto , Yuji Ando , Tatsuo Nakayama , Takashi Inoue , Masaaki Kuzuhara
IPC分类号： H01L31/0328 , H01L21/336
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/7787
摘要： An electric-field control electrode (5) is formed between a gate electrode (2) and a drain electrode (3). A multilayered film including a SiN film (21) and a SiO2 film (22) is formed below the electric-field control electrode (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered with the SiN film (21).
摘要翻译：在栅电极（2）和漏电极（3）之间形成电场控制电极（5）。在电场控制电极（5）的下方形成包括SiN膜（21）和SiO 2膜（22）的多层膜。形成SiN膜（21），使得AlGaN电子供给层（13）的表面被SiN膜（21）覆盖。

9. 发明授权

US06441391B1 Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate 有权
标题翻译：具有漏极和栅电极的半导体器件形成为相对于衬底沿着几个方向的位置
公开(公告)号：US06441391B1
公开(公告)日：2002-08-27
申请号：US09940374
申请日：2001-08-29
申请人： Yasuo Ohno , Nobuyuki Hayama , Kensuke Kasahara , Tatsuo Nakayama , Hironobu Miyamoto , Yuji Takahashi , Yuji Ando , Kohji Matsunaga , Masaaki Kuzuhara
发明人： Yasuo Ohno , Nobuyuki Hayama , Kensuke Kasahara , Tatsuo Nakayama , Hironobu Miyamoto , Yuji Takahashi , Yuji Ando , Kohji Matsunaga , Masaaki Kuzuhara
IPC分类号： H01L2906
CPC分类号： H01L29/812 , H01L29/045 , H01L29/2003
摘要： An object of the present invention is to improve, in a group III nitride semiconductor device, the productivity, heat radiation characteristic and performance in the element high speed operation; upon a sapphire substrate in which an A plane (an (11-20) plane) is set to be the basal plane, an epitaxial growth layer of a group III nitride semiconductor is formed and, thereon, a gate electrode 16, a source electrode 15 and a drain electrode 17 are formed; these electrodes are disposed in such a way that a direction along which they are laid makes an angle within 20° with respect to a C axis of sapphire.
摘要翻译：本发明的目的是在III族氮化物半导体器件中提高元件高速运转中的生产率，散热特性和性能; 在其中A平面（（11-20）面）设置为基面的蓝宝石衬底上，形成III族氮化物半导体的外延生长层，并且在其上形成栅电极16，源电极 15和漏电极17; 这些电极被设置成使得它们被放置的方向相对于蓝宝石的C轴成20°以内的角度。

10. 发明授权

US5801405A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US5801405A
公开(公告)日：1998-09-01
申请号：US923067
申请日：1997-09-03
申请人： Tatsuo Nakayama , Hironobu Miyamoto
发明人： Tatsuo Nakayama , Hironobu Miyamoto
IPC分类号： H01L29/812 , H01L21/338 , H01L29/10 , H01L29/778 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/1029 , H01L29/7783
摘要： An active layer of a field effect transistor disposed on an InP substrate (101) comprises at least an InAs layer (105) and two InGaAs layers (104, 106). The InGaAs layer (104) is In.sub.x Ga.sub.1-x As (wherein 0.55
摘要翻译：设置在InP衬底（101）上的场效应晶体管的有源层至少包括InAs层（105）和两个InGaAs层（104,106）。 InGaAs层（104）是In x Ga 1-x As（其中0.55

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