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1. 发明授权

US4194927A Selective thermal oxidation of As-containing compound semiconductor regions 失效
标题翻译：含砷化合物半导体区域的选择性热氧化
公开(公告)号：US4194927A
公开(公告)日：1980-03-25
申请号：US923689
申请日：1978-07-11
申请人： Hiromitsu Takagi , Gota Kano , Iwao Teramoto
发明人： Hiromitsu Takagi , Gota Kano , Iwao Teramoto
IPC分类号： H01L21/3105 , H01L21/324 , H01L7/36 , H01L7/44
CPC分类号： H01L21/3105 , H01L21/3245
摘要： In the process of forming a thermal oxide film or heat treatment of an oxide film in making a semiconductor device comprising a compound semiconductor of arsenic, the semiconductor is handled in an atmosphere containing arsenic oxide vapor in order to prevent evaporation of the arsenic tri-oxide in the thermal oxidation film or the oxide film under heat treatment, thereby to form a thermal oxide film having good chemical stability and good electrical characteristics, or to improve the oxide film so as to have good chemical stability and good electrical characteristics.
摘要翻译：在制造包含砷化合物半导体的半导体器件中形成热氧化膜或氧化膜的热处理的过程中，在含有氧化砷蒸汽的气氛中处理半导体，以防止三氧化砷的蒸发在热氧化膜或氧化膜中进行热处理，从而形成具有良好的化学稳定性和良好的电特性的热氧化膜，或改善氧化膜以具有良好的化学稳定性和良好的电特性。

2. 发明授权

US4351099A Method of making FET utilizing shadow masking and diffusion from a doped oxide 失效
标题翻译：利用阴影掩蔽和掺杂氧化物扩散制造FET的方法
公开(公告)号：US4351099A
公开(公告)日：1982-09-28
申请号：US149621
申请日：1980-05-12
申请人： Hiromitsu Takagi , Shotaro Umebachi , Gota Kano , Iwao Teramoto
发明人： Hiromitsu Takagi , Shotaro Umebachi , Gota Kano , Iwao Teramoto
IPC分类号： H01L21/033 , H01L21/337 , H01L29/80 , H01L29/808 , H01L21/31 , H01L21/225 , H01L21/265
CPC分类号： H01L29/66909 , H01L21/033 , H01L29/80 , H01L29/808
摘要： A novel self-align type method of making an FET with a very short gate length and a good high frequency characteristic, and a low noise characteristic, the method comprising the steps of:forming on a silicon epitaxial layer (13) of n-type conductivity a doped oxide film (14) containing boron as an impurity to give p-type conductivity,forming a mask (15a, 16a) containing Si.sub.3 N.sub.4 film and having a width larger than that of a gate region (19) to be formed on said n-type epitaxial layer (13),etching said doped oxide film (14) by utilizing said mask (15a, 16a) as an etching mask to expose surface of said silicon crystal layer (13) in a manner that sides of the part of said doped oxide film (14) covered by said mask (15, 16a) are side-etched by a predetermined width,ion-implanting an impurity of said first conductivity type into said n-type epitaxial layer (13) by utilizing said mask as implanting mask, andcarrying out a heat treating thereby diffusing said second conductivity type impurity from said doped oxide film (14) retained only under said mask into said n-type epitaxial layer (13) to form said gate region (19) and driving said ion-implanted first conductivity type impurity into said silicon crystal layer (13) to form a source region (17) and a drain region (18).
摘要翻译：一种制造具有非常短的栅极长度和良好的高频特性以及低噪声特性的FET的新型自对准型方法，该方法包括以下步骤：在n型硅外延层（13）上形成电导率为含有硼作为杂质的掺杂氧化物膜（14）以产生p型导电性，形成包含Si 3 N 4膜的掩模（15a，16a），其宽度大于所述栅极区域（19）的宽度通过利用所述掩模（15a，16a）作为蚀刻掩模蚀刻所述掺杂氧化物膜（14），以使得所述硅晶体层（13）的所述一部分的侧面将由所述掩模（15,16a）覆盖的所述掺杂氧化物膜（14）以预定宽度进行侧蚀刻，通过利用所述掩模将所述第一导电类型的杂质离子注入所述n型外延层（13）植入掩模，并进行热处理，从而扩散所述第二导电型不动杆将所述掺杂氧化物膜（14）保留在所述掩模内的所述n型外延层（13）中以形成所述栅极区域（19）并将所述离子注入的第一导电类型杂质驱动到所述硅晶体层（13）中，以形成源极区（17）和漏极区（18）。

3. 发明授权

US4053798A Negative resistance device 失效
标题翻译：负极电阻装置
公开(公告)号：US4053798A
公开(公告)日：1977-10-11
申请号：US658052
申请日：1976-02-13
申请人： Susumu Koike , Gota Kano , Iwao Teramoto
发明人： Susumu Koike , Gota Kano , Iwao Teramoto
IPC分类号： G11C11/36 , G11C14/00 , H01L27/06 , H01L27/092 , H03K3/3565 , G11C11/40 , G11C5/02 , H01L29/78 , H03K3/353
CPC分类号： H03K3/3565 , G11C11/36 , G11C14/00 , H01L27/0629 , H01L27/0927 , G11C2211/5614
摘要： A negative resistance device formed by series-connection of a complementary pair of insulated gate type FETs (field effect transistors), the source of the FETs being connected to each other and the gates of each of the FETs being connected to the respective drain of the other FET at least one FET having a double layered gate insulation film under the gate electrode, thereby forming a non-volatile memory element. The negative resistance device acquires or loses negative resistance characteristics by responding to signals to the gates, thereby memorizing the signals and resulting in a highly efficient memory which requires little power in writing-in, erasing and memory-holding.

4. 发明授权

US3989962A Negative-resistance semiconductor device 失效
标题翻译：负电阻半导体器件
公开(公告)号：US3989962A
公开(公告)日：1976-11-02
申请号：US555676
申请日：1975-03-05
申请人： Hiromitsu Takagi , Gota Kano
发明人： Hiromitsu Takagi , Gota Kano
IPC分类号： G11C11/41 , H02H9/02 , H03B7/06 , H03H11/52 , H03K17/082 , H03K17/58 , H03K17/687 , H03K4/83 , H02H9/00 , H03K3/353 , H03K17/72
CPC分类号： H03K17/0826 , H02H9/025
摘要： Both source-electrodes (S1 and S2) or both drain-electrodes of a pair of field-effect transistors (FETs) (F1 and F2) of n-channel type and p-channel type, respectively, both to be electrically actuated in a depletion mode are connected to each other, or the source of one FET and the drain of the other FET are connected to each other, through a variable resistance element (F3) inbetween, whereby the pair of FETs (F1 and F3) are series-connected through the variable resistance element (F3) inbetween, the gate-electrode (g1 or g2) of each FET is connected to the drain-electrode (d2 or d1) or the source-electrode of the other FET (F2 or F1) that is not connected to the variable resistance element (F3), and a pair of external terminals (1 and 2) are connected to said gate electrodes (g1, g2) those are connected to said drain electrodes (d2 and d1) or source electrodes.When a voltage of specified range is applied across both non-series-connected electrodes, i.e., the two external terminals, the resulting voltage-current characteristic presents a so-called dynatron-type characteristic, producing a negative-resistance phenomenon, and a curve of voltage-current characteristic changes responding to the value of control signal to the variable resistance element.Since this device is a negative resistance of variable characteristic this device can be utilized for switching, signal relaying, memorization and other various controlling or data processing uses.
摘要翻译：分别在n沟道型和p沟道型的一对场效应晶体管（FET）（F1和F2）中的两个源电极（S1和S2）或两个漏电极都被电致动耗尽模式彼此连接，或者一个FET的源极和另一个FET的漏极通过其间的可变电阻元件（F3）彼此连接，由此一对FET（F1和F3）串联连接，通过可变电阻元件（F3）连接，每个FET的栅电极（g1或g2）连接到漏电极（d2或d1）或另一个FET（F2或F1）的源电极，未连接到可变电阻元件（F3），并且一对外部端子（1和2）连接到与所述漏电极（d2和d1）或源电极连接的所述栅电极（g1，g2）。

5. 发明授权

US4117587A Negative-resistance semiconductor device 失效
标题翻译：负电阻半导体器件
公开(公告)号：US4117587A
公开(公告)日：1978-10-03
申请号：US712583
申请日：1976-08-06
申请人： Gota Kano , Hitoo Iwasa
发明人： Gota Kano , Hitoo Iwasa
IPC分类号： G11C11/36 , G11C11/412 , H01L21/82 , H01L27/098 , H03K3/3565 , B01J17/00
CPC分类号： H03K3/3565 , G11C11/36 , G11C11/412 , H01L21/82 , H01L27/098 , G11C2211/5614
摘要： A pair of field-effect transistors (hereinafter referred to as FETs) of p-channel type and n-channel type, respectively, both to be electrically actuated in a depletion mode, are formed on a single semiconductor substrate, for instance, a single silicon substrate, and both sources or both drains are connected to each other, or the source of one FET and the drain of the other FET are connected to each other, whereby the pair of FETs are series-connected, and the gate electrode of each FET is connected to the drain electrode or the source electrode that is not series connected in the above-mentioned way, respectively, of the other FET. The device is characterized in that each FET has each back-gate electrode region behind the channel. Preferably, such back-gate regions are high-doped diffused regions.When a voltage of specified range is applied across both non-series-connected electrodes, i.e., the two external terminals, the resulting voltage-current characteristic presents a so-called dynatron-type characteristic, producing a negative-resistance phenomenon over a fairly wide range of applied voltage. Since this device is, as seen from outside as one device, a two-terminal device constituted on a single substrate comprising FETs with back-gate electrode, it is not only fit to be highly integrated but also able to produce a state of virtually zero value of cut-off current. Consequently, this device can be utilized for switching, memorization, large amplitude oscillation, and other various uses, with low Vth2 value.
摘要翻译：在单个半导体衬底上形成分别以耗尽模式电致动的p沟道型和n沟道型的一对场效应晶体管（以下称为FET），例如单个硅衬底，两个源极或两个漏极彼此连接，或者一个FET的源极和另一个FET的漏极彼此连接，由此一对FET串联连接，并且每个FET的栅极电极 FET分别与另一个FET分别以上述方式串联的漏电极或源极连接。该器件的特征在于每个FET在通道后面具有每个背栅极电极区域。优选地，这种背栅极区域是高掺杂扩散区域。

6. 发明授权

US3992650A Apparatus to prevent overcurrent or overvoltage 失效
标题翻译：防止过电流或过电压的装置
公开(公告)号：US3992650A
公开(公告)日：1976-11-16
申请号：US545165
申请日：1975-01-29
申请人： Hitoo Iwasa , Gota Kano
发明人： Hitoo Iwasa , Gota Kano
IPC分类号： H02H3/087 , H02H3/20 , H02H3/08
CPC分类号： H02H3/087
摘要： Across a D.C. power source 1, a load 2, a switching element 4, such as a transistor having a control electrode c (base), and a voltage detection means 5, such as a resistor, are connected in series, and a known negative resistance device 6, having two terminals 31 and 32, is connected by its one terminal 32 to said control electrode c of the switching element 4 and by its other terminal 31 to one end of said series resistor 5 which one end is opposite to that connected to said switching element (4), wherein said negative resistance device 6 comprises, as shown in FIG 2, known complementary connection of a depletion mode n-channel field-effect transistor (FET) and a depletion mode p-channel FET. The FETs are connected from source to source, and from the gate of each to the drain of the other so that when an overcurrent to the load 2 or an overvoltage at the voltage source 1 occurs, voltage across said resistor 5 exceeds a preset value, the negative resistance device 6 is cut-off, thereby cutting off the switching element 4.
摘要翻译：跨直流电源1，负载2，具有控制电极c（基极）的晶体管等开关元件4以及诸如电阻器的电压检测装置5串联连接，已知的负极具有两个端子31和32的电阻装置6通过其一个端子32连接到开关元件4的所述控制电极c，并且其另一个端子31连接到所述串联电阻器5的一端，其一端与连接到所述开关元件（4），其中如图2所示，所述负电阻器件6包括耗尽型n沟道场效应晶体管（FET）和耗尽型p沟道FET的已知互补连接。 FET从源极到源极，从每个的栅极连接到另一个的漏极，使得当发生到负载2的过电流或电压源1的过电压时，所述电阻器5两端的电压超过预设值，负电阻装置6被切断，从而切断开关元件4。

7. 发明授权

US4459556A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US4459556A
公开(公告)日：1984-07-10
申请号：US539634
申请日：1983-10-07
申请人： Shutaro Nanbu , Atsushi Nagashima , Gota Kano
发明人： Shutaro Nanbu , Atsushi Nagashima , Gota Kano
IPC分类号： H01L29/80 , H01L29/812 , H01L29/76
CPC分类号： H01L29/8124
摘要： A dual gate Schottky barrier gate GaAs FET with improved cross-modulation characteristics when used in a UHF gain controlling tuner, having a value of 40 mA or smaller of a drain to source saturation current, the improvement of the FET is that length of a second gate which is disposed between a first gate and a drain is 1.5 .mu.m or longer.
摘要翻译：当在UHF增益控制调谐器中使用具有40mA或更小的漏极到源极饱和电流的值时，具有改进的交叉调制特性的双栅肖特基势垒栅极GaAs FET，FET的改进是第二设置在第一栅极和漏极之间的栅极为1.5μm以上。

8. 发明授权

US3951702A Method of manufacturing a junction field effect transistor 失效
标题翻译：连接场效应晶体管的制造方法
公开(公告)号：US3951702A
公开(公告)日：1976-04-20
申请号：US460877
申请日：1974-04-15
申请人： Gota Kano , Satoshi Teramoto
发明人： Gota Kano , Satoshi Teramoto
IPC分类号： H01L29/80 , H01L21/22 , H01L21/337 , H01L29/00 , H01L29/808 , H01L21/225
CPC分类号： H01L29/00 , H01L29/66901
摘要： A method of manufacturing a junction field effect transistor wherein after a P type pre-diffused layer is formed in an N type region constituting a back gate region of a junction field effect transistor, arsenic is selectively diffused into the P type pre-diffused layer to form a gate region with a simultaneous drive-in step for the P type pre-diffused layer in order to obtain a thin channel by utilizing the pull-in effect.
摘要翻译：一种结型场效应晶体管的制造方法，其中，在形成结型场效应晶体管的背栅区域的N型区域中形成P型预扩散层后，砷选择性地扩散到P型预扩散层形成具有用于P型预扩散层的同时驱动步骤的栅极区域，以便通过利用拉入效应来获得薄沟道。

9. 发明授权

US06174213B1 Fluorescent lamp and method of manufacturing same 失效
标题翻译：荧光灯及其制造方法
公开(公告)号：US06174213B1
公开(公告)日：2001-01-16
申请号：US09388038
申请日：1999-09-01
申请人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
发明人： Carlos A. Paz de Araujo , Jolanta Celinska , Joseph D. Cuchiaro , Jeffrey W. Bacon , Larry D. McMillan , Akihiro Matsuda , Gota Kano , Yoshio Yamaguchi , Tatsuo Morita , Hideo Nagai
IPC分类号： B05D722
CPC分类号： C03C17/3417 , C03C17/253 , C03C2217/21 , C03C2217/211 , C03C2217/24 , C03C2217/244 , C23C18/1216 , C23C18/1225 , C23C18/1275 , C23C18/1283 , C23C18/1291
摘要： Metal organic precursor compounds are dissolved in an organic solvent to form a nonaqueous liquid precursor. The liquid precursor is applied to the inner envelope surface of a fluorescent lamp and heated to form a metal oxide thin film layer. The metal oxide thin film layer may be a conductor, a protective layer or provide other functions. The films have a thickness of from 20 nm to 500 nm. A conductive layer comprising tin-antimony oxide with niobium dopant may be fabricated to have a differential resistivity profile by selecting a combination of precursor composition and annealing temperatures.
摘要翻译：将金属有机前体化合物溶解在有机溶剂中以形成非水性液体前体。将液体前体施加到荧光灯的内包络面上并加热形成金属氧化物薄膜层。金属氧化物薄膜层可以是导体，保护层或提供其他功能。膜的厚度为20nm至500nm。可以通过选择前体组合物和退火温度的组合来制造包含具有铌掺杂剂的锡 - 锑氧化物的导电层以具有差分电阻率分布。

10. 发明授权

US3969697A Voltage drop warning apparatus with negative-resistance device 失效
标题翻译：具有负电阻装置的降压报警装置
公开(公告)号：US3969697A
公开(公告)日：1976-07-13
申请号：US537392
申请日：1974-12-30
申请人： Hitoo Iwasa , Gota Kano
发明人： Hitoo Iwasa , Gota Kano
IPC分类号： G01R19/165 , G01R31/36 , G08B21/00
CPC分类号： G01R19/16542 , G01R19/16538
摘要： A series connection comprising a transistor (4) and a light-emitting diode (3) is connected across a D.C. power source (+Vcc), and one end of a negative-resistance device (1) is connected to the base of said transistor (4) and the other end thereof is connected to an end of said light-emitting diode (3), which last-mentioned one end is connected to the D.C. power source (+Vcc). The circuit constituted as above memorizes an occurence of voltage drop which enables bistable switching in the negative-resistance device, thereby energizing the light emitting diode to light. The circuit can be used to indicate voltage lowering or interruption of an A.C. power supply, or weakening of a battery.
摘要翻译：包括晶体管（4）和发光二极管（3）的串联连接跨越DC电源（+ Vcc）连接，负电阻器件（1）的一端连接到所述晶体管的基极（4），其另一端连接到所述发光二极管（3）的一端，最后一端连接到直流电源（+ Vcc）。如上所述构成的电路存储电压降的发生，其使负电阻装置中的双稳态切换，从而使发光二极管通电。该电路可用于指示交流电源的电压降低或中断，或电池的弱化。

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