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1. 发明授权

US08113221B2 Substrate cleaning method, substrate cleaning apparatus and computer readable recording medium 有权
标题翻译：基板清洗方法，基板清洗装置和计算机可读记录介质
公开(公告)号：US08113221B2
公开(公告)日：2012-02-14
申请号：US13042844
申请日：2011-03-08
申请人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
发明人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , G02F2001/1316 , G11B23/505 , H01L21/67034
摘要： After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.
摘要翻译：在通过在大致水平状态下旋转晶片W的同时以预定流量将纯水供给到晶片W的表面来进行晶片W的冲洗处理后，纯水对晶片W的供给量减少，并且纯水供给点从晶片W的中心向外移动。以这种方式，对晶片W进行旋转干燥处理，同时在纯水供给点的大致外部区域形成液膜。

2. 发明申请

US20070131256A1 Substrate cleaning method, substrate cleaning apparatus and computer readable recording medium 有权
标题翻译：基板清洗方法，基板清洗装置和计算机可读记录介质
公开(公告)号：US20070131256A1
公开(公告)日：2007-06-14
申请号：US10577314
申请日：2004-11-12
申请人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
发明人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , G02F2001/1316 , G11B23/505 , H01L21/67034
摘要： After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.
摘要翻译：在通过在大致水平状态下旋转晶片W的同时以预定流量将纯水供给到晶片W的表面来进行晶片W的冲洗处理后，纯水对晶片W的供给量减少，并且纯水供给点从晶片W的中心向外移动。以这种方式，对晶片W进行旋转干燥处理，同时在纯水供给点的大致外部区域形成液膜。

3. 发明授权

US07927429B2 Substrate cleaning method, substrate cleaning apparatus and computer readable recording medium 有权
标题翻译：基板清洗方法，基板清洗装置和计算机可读记录介质
公开(公告)号：US07927429B2
公开(公告)日：2011-04-19
申请号：US10577314
申请日：2004-11-12
申请人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
发明人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , B08B3/02 , G02F2001/1316 , G11B23/505 , H01L21/67034
摘要： After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.
摘要翻译：在通过在大致水平状态下旋转晶片W的同时以预定流量将纯水供给到晶片W的表面来进行晶片W的冲洗处理后，纯水对晶片W的供给量减少，并且纯水供给点从晶片W的中心向外移动。以这种方式，对晶片W进行旋转干燥处理，同时在纯水供给点的大致外部区域形成液膜。

4. 发明授权

US07354484B2 Liquid processing apparatus and liquid processing method 失效
公开(公告)号：US07354484B2
公开(公告)日：2008-04-08
申请号：US11892429
申请日：2007-08-22
申请人： Takehiko Orii , Masahiro Mukoyama , Hiromitsu Nanba
发明人： Takehiko Orii , Masahiro Mukoyama , Hiromitsu Nanba
IPC分类号： B08B5/04 , B08B9/00 , B08B9/027 , B08B3/00
CPC分类号： H01L21/67051
摘要： A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.

5. 发明授权

US07275553B2 Liquid processing apparatus and liquid processing method 有权
标题翻译：液体处理装置和液体处理方法
公开(公告)号：US07275553B2
公开(公告)日：2007-10-02
申请号：US10409615
申请日：2003-04-09
申请人： Takehiko Orii , Masahiro Mukoyama , Hiromitsu Nanba
发明人： Takehiko Orii , Masahiro Mukoyama , Hiromitsu Nanba
IPC分类号： B08B3/00 , B08B3/04 , C23C16/00
CPC分类号： H01L21/67051
摘要： A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.
摘要翻译：一种清洁处理装置，包括用于保持晶片W的旋转卡盘，设置在与晶片W的背面对置的底板，其间设有规定的间隙，支撑底板的支撑部件和形成为延伸穿过板构件和支撑构件。可以通过开闭阀将化学液体，纯水和气体供给到喷嘴孔中，并且可以通过吸引装置吸引残留在喷嘴孔内的化学液体和纯水。在用纯水处理晶片W之后，通过使用吸附装置吸引残留在喷嘴孔内的纯水，然后将气体喷射到晶片W的背面。

6. 发明授权

US06513537B1 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US06513537B1
公开(公告)日：2003-02-04
申请号：US09702679
申请日：2000-11-01
申请人： Takehiko Orii , Hiroki Ohno , Takashi Yabuta
发明人： Takehiko Orii , Hiroki Ohno , Takashi Yabuta
IPC分类号： B08B600
CPC分类号： H01L21/02071 , G03F7/405 , H01L21/6708 , H01L21/76814
摘要： The present invention relates to a method of removing a polymer veil and a metal contamination deposited on a substrate having a metal layer. First, the polymer veils are removed by a chemical liquid in an inert gas atmosphere. Subsequently, the metal contamination are removed by oxidizing the metal contamination into metal oxide contamination by mixing oxygen in a small concentration in the inert gas atmosphere, and dissolving the metal oxide contamination by the chemical liquid.
摘要翻译：本发明涉及去除聚合物面纱和沉积在具有金属层的基底上的金属污染物的方法。首先，通过化学液体在惰性气体气氛中除去聚合物面纱。随后，通过在惰性气体气氛中混合少量氧气并将金属氧化物污染物溶解在化学液体中，将金属污染物氧化成金属氧化物污染物，去除金属污染物。

7. 发明授权

US08651121B2 Substrate processing apparatus, substrate processing method, and storage medium 有权
标题翻译：基板处理装置，基板处理方法和存储介质
公开(公告)号：US08651121B2
公开(公告)日：2014-02-18
申请号：US12372265
申请日：2009-02-17
申请人： Takehiko Orii , Kenji Sekiguchi
发明人： Takehiko Orii , Kenji Sekiguchi
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , H01L21/67028 , H01L21/67034
摘要： A substrate processing apparatus includes a chamber configured to dispose a substrate to be processed with a substrate holder, a spin chuck to rotate the substrate, a gas discharging head configured to discharge a dehumidified gas to the substrate, a processing liquid supply nozzle, an IPA supply nozzle, and a driving device configured to move the gas discharging head between a retreat position of an upper part of the chamber and an approach position near the substrate. In particular, the gas discharging head is positioned at the approach position when the IPA is supplied to the substrate so that the dehumidified gas is supplied from the gas discharging head to the substrate when the IPA is supplied to the substrate.
摘要翻译：一种基板处理装置，包括：配置成用基板保持件配置被处理基板的室，旋转基板的旋转卡盘，将排出除湿气体排出到基板的排气头，处理液供给喷嘴，IPA 供给喷嘴和驱动装置，该驱动装置构造成使所述气体排出头在所述室的上部的后退位置和所述基板附近的接近位置之间移动。特别地，当将IPA提供给基板时，气体放电头位于接近位置，使得当将IPA供给到基板时，将除气从气体排出头供应到基板。

8. 发明授权

US07803230B2 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US07803230B2
公开(公告)日：2010-09-28
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

9. 发明授权

US07402523B2 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US07402523B2
公开(公告)日：2008-07-22
申请号：US11393915
申请日：2006-03-31
申请人： Eiichi Nishimura , Takehiko Orii
发明人： Eiichi Nishimura , Takehiko Orii
IPC分类号： H01L21/00 , B44C1/22
CPC分类号： H01L21/31133 , H01L21/31111 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/6708 , H01L21/76802
摘要： A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by applying another plasma which is different from the plasma used in the above etching process. The method further includes the process of removing the modified remaining film of the insulation film with a liquid chemical. The process of removing the modified remaining film can be also achieved by a dry etching method not employing a plasma.
摘要翻译：通过图案化掩模蚀刻绝缘膜的方法包括以下步骤：在通过施加等离子体即将露出底层之前蚀刻绝缘膜，并通过施加另一种来改变绝缘膜的剩余膜的质量与上述蚀刻工艺中使用的等离子体不同的等离子体。该方法还包括用液体化学品去除绝缘膜的改性剩余膜的方法。通过不使用等离子体的干式蚀刻方法也可以实现除去改性后的膜的工序。

10. 发明申请

US20070128373A1 Electroless plating apparatus and electroless plating method 审中-公开
标题翻译：无电镀设备和化学镀方法
公开(公告)号：US20070128373A1
公开(公告)日：2007-06-07
申请号：US11606158
申请日：2006-11-30
申请人： Kenichi Hara , Mitsuaki Iwashita , Takehiko Orii , Takayuki Toshima
发明人： Kenichi Hara , Mitsuaki Iwashita , Takehiko Orii , Takayuki Toshima
IPC分类号： B05D5/12 , B05D3/04 , B05D1/18 , B05C11/00 , B05B3/00
CPC分类号： H01L21/6723 , C23C18/1628 , C23C18/1676 , C23C18/168 , H01L21/6708 , H01L21/67109 , H01L21/67248
摘要： An electroless plating apparatus which supplies a plating solution to a top surface of a substrate to effect electroless plating, comprises a substrate support section which supports a substrate, a plating-solution retaining section which retains the plating solution to be supplied to the top surface of the substrate, a plating-solution feeding pipe which guides the plating solution from the plating-solution retaining section to the top surface of the substrate supported by the substrate support section, a plating-solution temperature controlling mechanism which controls a temperature of the plating solution flowing in the plating-solution feeding pipe, and a suction mechanism which sucks the plating solution in the plating-solution feeding pipe toward the plating-solution retaining section when feeding of the plating solution to the top surface of the substrate through the plating-solution feeding pipe is stopped.
摘要翻译：向基板的上表面供给电镀液的无电解电镀装置包括：支撑基板的基板支撑部，保持要供给到基板的上表面的电镀液的电镀液保持部; 基板，将电镀液从电镀液保持部引导到由基板支撑部支撑的基板的上表面的电镀液供给管，控制电镀液的温度的电镀液温度控制机构在电镀溶液供给管中流动的吸附机构，在将电镀液通过电镀液供给到基板的上表面时，将电镀液供给管内的电镀液吸附到电镀液保持部的吸引机构进料管停止。

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