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1. 发明授权

US06664224B2 Quaternary ammonium salt and process for the preparation thereof 失效
标题翻译：季铵盐及其制备方法
公开(公告)号：US06664224B2
公开(公告)日：2003-12-16
申请号：US09854668
申请日：2001-05-15
申请人： Hiroki Kourai , Shigeyuki Shibata , Katsuyoshi Harada , Masayoshi Kume
发明人： Hiroki Kourai , Shigeyuki Shibata , Katsuyoshi Harada , Masayoshi Kume
IPC分类号： C11D348
CPC分类号： C07C211/63 , A01N33/12
摘要： The novel quaternary ammonium salt according to the invention has two quaternary ammonium groups connected to a benzene ring, wherein two C4-12 alkyl groups and one C1-2 alkyl group are connected per one nitrogen atom constituting the quaternary ammonium. The compound is used as an antimicrobial agent, exhibits a high safety to human as compared with known antimicrobial agents, exerts an excellent sterilizing effect itself and exhibits a wide sterilizing spectrum. In particular, the compound is used as a presevative for eye drop.
摘要翻译：根据本发明的新型季铵盐具有连接到苯环的两个季铵基团，其中每个构成季铵的氮原子连接两个C 4-12烷基和一个C 1-2烷基。该化合物用作抗微生物剂，与已知的抗微生物剂相比，对人体的安全性高，对其本身具有优异的灭菌效果，并具有广泛的杀菌谱。特别地，该化合物用作滴眼剂的前提。

2. 发明申请

US20090104100A1 METHOD FOR DETOXIFYING HCD GAS AND APPARATUS THEREFOR 有权
标题翻译：用于脱氧HCD气体及其装置的方法
公开(公告)号：US20090104100A1
公开(公告)日：2009-04-23
申请号：US12224508
申请日：2007-02-06
申请人： Hiroshi Imamura , Hiroaki Takeuchi , Koji Ishikawa , Hiroshi Suzuki , Akira Moriya , Katsuyoshi Harada
发明人： Hiroshi Imamura , Hiroaki Takeuchi , Koji Ishikawa , Hiroshi Suzuki , Akira Moriya , Katsuyoshi Harada
IPC分类号： B01D53/70
CPC分类号： B01D53/68 , B01D2257/204 , C23C16/4412 , F23G7/063 , F23L7/002
摘要： Hexachlorodisilane is decomposed into hydrochloric acid, silicon dioxide and water by introducing hexachlorodisilane-containing flue gas into a reaction region without moistening the flue gas and by supplying oxygen-containing gas that also contains a small amount of moisture to the reaction region maintained at a temperature at which hexachlorodisilane decomposes.
摘要翻译：将六氯二硅烷分解成盐酸，二氧化硅和水，通过将六氯二硅烷的烟道气引入反应区而不使烟道气润湿，并将含有少量水分的含氧气体供给到保持在温度六氯代硅烷分解。

3. 发明授权

US5221412A Vapor-phase epitaxial growth process by a hydrogen pretreatment step followed by decomposition of disilane to form monocrystalline Si film 失效
标题翻译：通过氢预处理步骤进行气相外延生长过程，然后分解乙硅烷以形成单晶Si膜
公开(公告)号：US5221412A
公开(公告)日：1993-06-22
申请号：US588220
申请日：1990-09-26
申请人： Yoshikazu Kagata , Katsuyoshi Harada
发明人： Yoshikazu Kagata , Katsuyoshi Harada
IPC分类号： C30B25/02 , H01L21/205
CPC分类号： C30B29/06 , C30B25/02 , H01L21/02381 , H01L21/02532 , H01L21/0262 , Y10S438/974
摘要： The present invention provides a process for the vapor-phase epitaxial growth of a Si single crystal film on a Si single crystal substrate using diluted disilane, in which the process is carried out at a linear speed of diluted disilane on the surface of the Si single crystal substrate is in the range of 5 to 100 cm/min. and, as desired, the substrate is subjected to the heat pretreatment in a hydrogen stream at a temperature of 1,000.degree. C. or higher for a period of 30 minutes or longer before the epitaxial growth.
摘要翻译：本发明提供了使用稀释乙硅烷在Si单晶衬底上进行Si单晶膜的气相外延生长的方法，其中该工艺以Si单面表面的稀释乙硅烷的线速度进行晶体衬底在5至100cm / min的范围内。并且根据需要，在外延生长之前，在1000℃或更高的温度下，在氢气流中对基板进行30分钟或更长时间的热预处理。

4. 发明授权

US07976807B2 Method for detoxifying HCD gas and apparatus therefor 有权
标题翻译： HCD气体的解毒方法及其设备
公开(公告)号：US07976807B2
公开(公告)日：2011-07-12
申请号：US12224508
申请日：2007-02-06
申请人： Hiroshi Imamura , Hiroaki Takeuchi , Koji Ishikawa , Hiroshi Suzuki , Akira Moriya , Katsuyoshi Harada
发明人： Hiroshi Imamura , Hiroaki Takeuchi , Koji Ishikawa , Hiroshi Suzuki , Akira Moriya , Katsuyoshi Harada
IPC分类号： B01D53/68
CPC分类号： B01D53/68 , B01D2257/204 , C23C16/4412 , F23G7/063 , F23L7/002
摘要： Hexachlorodisilane is decomposed into hydrochloric acid, silicon dioxide and water by introducing hexachlorodisilane-containing flue gas into a reaction region without moistening the flue gas and by supplying oxygen-containing gas that also contains a small amount of moisture to the reaction region maintained at a temperature at which hexachlorodisilane decomposes.
摘要翻译：将六氯二硅烷分解成盐酸，二氧化硅和水，通过将六氯二硅烷的烟道气引入反应区而不使烟道气润湿，并将含有少量水分的含氧气体供给到保持在温度六氯代硅烷分解。

5. 发明授权

US07488693B2 Method for producing silicon oxide film 失效
标题翻译：氧化硅膜的制造方法
公开(公告)号：US07488693B2
公开(公告)日：2009-02-10
申请号：US10589077
申请日：2005-02-17
申请人： Hiroaki Takeuchi , Satoshi Hattori , Hiroshi Suzuki , Katsuyoshi Harada
发明人： Hiroaki Takeuchi , Satoshi Hattori , Hiroshi Suzuki , Katsuyoshi Harada
IPC分类号： H01L21/26
CPC分类号： C23C16/401 , H01L21/31604
摘要： [Problems] It is to provide a method for producing a silicon oxide film having better quality than a TEOS at low temperature. And it is to provide a method for manufacturing a semiconductor device wherein an insulating film composed of a silicon oxide is formed.[Means for solving problems] A film composed of a silicon oxide is produced by CVD method where a silane compound represented by the following general formula is reacted. An insulating film is deposited by CVD method where a silane compound represented by the following general formula is reacted. HnSi2(OR)6−n (In the above formula, R is an alkyl group of carbon number from 1 to 5, and n is an integer from 0 to 2.)
摘要翻译： [问题]提供一种在低温下具有比TEOS更好质量的氧化硅膜的方法。并且提供一种制造其中形成由氧化硅构成的绝缘膜的半导体器件的方法。解决问题的手段通过CVD法制造由氧化硅构成的膜，其中由以下通式表示的硅烷化合物反应。通过CVD法沉积绝缘膜，其中由以下通式表示的硅烷化合物反应。 <？in-line-formula description =“In-line Formulas”end =“lead”？> HnSi2（OR）6-n <？in-line-formula description =“In-line Formulas”end =“tail”？ >（在上式中，R为碳原子数1〜5的烷基，n为0〜2的整数）

6. 发明授权

US07005532B2 Process of producing alkoxysilanes 失效
标题翻译：生产烷氧基硅烷的方法
公开(公告)号：US07005532B2
公开(公告)日：2006-02-28
申请号：US10489719
申请日：2002-09-11
申请人： Eiichi Suzuki , Masaki Okamoto , Seitaro Tajima , Hiroshi Suzuki , Katsuyoshi Harada
发明人： Eiichi Suzuki , Masaki Okamoto , Seitaro Tajima , Hiroshi Suzuki , Katsuyoshi Harada
IPC分类号： C07F7/18
CPC分类号： C07F7/1876 , C07F7/1804
摘要： An object of the present invention is to provide a process of producing alkoxysilanes, which does not use a chlorosilane as the intermediate raw material, is improved in view of the environment, and is satisfactory with respect to the yield of a desired material.The present invention is concerned with a process of producing an alkoxysilane including hydrosilylating (A) an organosilicon compound having at least one hydrogen-silicon bond and at least one alkoxy group and (B) an organic compound having a carbon—carbon unsaturated bond in vapor phase in the presence of a mixture containing a hydrosilylation catalyst and a polyalkylene glycol and supported on a carrier, thereby adding hydrogen and silicon of the compound (A) to the carbon—carbon unsaturated bond in the compound (B).
摘要翻译：本发明的目的是提供一种制备不使用氯硅烷作为中间原料的烷氧基硅烷的方法，其环境方面得到改善，并且对于所需材料的产率是令人满意的。

7. 发明授权

US5985229A Solid silica derivative and process for producing the same 失效
标题翻译：固体二氧化硅衍生物及其制造方法
公开(公告)号：US5985229A
公开(公告)日：1999-11-16
申请号：US710419
申请日：1996-09-17
申请人： Yoshinori Yamada , Katsuyoshi Harada
发明人： Yoshinori Yamada , Katsuyoshi Harada
IPC分类号： C01B33/12 , C09C1/28 , C01B15/14 , C04B14/04
CPC分类号： C09C1/28 , C01B33/12 , C01P2004/03 , C01P2004/64
摘要： A solid silica derivative which is represented by the general formula H.sub.n SiO.sub.(4-n)/2 wherein n is a real number larger than 0 but smaller than 2 and which contains Si--H bond, said solid silica derivative being able to be easily produced in a high yield by subjecting to hydrolysis-condensation an alkoxysilane represented by the mean general formula H.sub.n --Si(OR.sup.0).sub.4-n in which R.sup.0 represents an alkyl group having 1 to 4 carbon atoms, plural R.sup.0 groups may be the same as or different from one another and n is a real number greater than 0 but smaller than 2, using water in an amount of (4-n)/2 moles or more per mole of the alkoxysilane at a pH of 10.5 or less.
摘要翻译：由通式H n SiO（4-n）/ 2表示的固体二氧化硅衍生物，其中n是大于0但小于2的实数，并且含有Si-H键，所述固体二氧化硅衍生物能够容易地生成通过水解缩合由通式为Hn-Si（OR0）4-n表示的烷氧基硅烷（其中R 0表示具有1至4个碳原子的烷基）表示的高收率，多个R0基团可以与使用相对于每摩尔烷氧基硅烷为（10-n）/ 2摩尔以上的水，pH为10.5以下的水，n为大于0但小于2的实数。

8. 发明授权

US5556999A Alkoxysilane composition inhibited from disproportionation reaction 失效
标题翻译：烷氧基硅烷组合物抑制歧化反应
公开(公告)号：US5556999A
公开(公告)日：1996-09-17
申请号：US556003
申请日：1995-11-13
申请人： Yoshinori Yamada , Mitsutaka Hasegawa , Katsuyoshi Harada
发明人： Yoshinori Yamada , Mitsutaka Hasegawa , Katsuyoshi Harada
IPC分类号： C07F7/04 , C07F7/02 , C07F7/08 , C07F7/18 , C07F7/20
CPC分类号： C07F7/025 , C07F7/1868 , C07F7/1872
摘要： Alkoxysilane composition, which is inhibited from disproportionation reaction that may cause production of monosilanes or reduction in purity of products, contains an alkoxysilane represented by the formula [I] and substantially free from alcohols:H.sub.m R.sub.n Si(OR').sub.4-m-n [I]wherein m is an integer of 1-3, n is an integer of 0-2, m+n.ltoreq.3, R is a C.sub.1 -C.sub.8 alkyl group, and R' is a C.sub.1 -C.sub.4 alkyl group, with a proviso that when there are two or more R or R', R and R' may be the same or different respectively, and at least one compound selected from the group consisting of organic sulfonic acids, sulfuric acid, SO.sub.2, carboxylic acids, carboxylic anhydrides and CO.sub.2.
摘要翻译：抑制可能引起单硅烷生成或产物纯度降低的歧化反应的烷氧基硅烷组合物含有式[I]表示的基本上不含醇的烷氧基硅烷：HmRnSi（OR'）4-mn [I]其中 m是1-3的整数，n是0-2的整数，m + n <3，R是C1-C8烷基，R'是C1-C4烷基，条件是当存在两个或更多个R或R'时，R和R'可以分别相同或不同，并且至少一种选自有机磺酸，硫酸，SO 2，羧酸，羧酸酐和CO 2的化合物。

9. 发明申请

US20050020845A1 Process of producing alkoxysilanes 失效
标题翻译：生产烷氧基硅烷的方法
公开(公告)号：US20050020845A1
公开(公告)日：2005-01-27
申请号：US10489719
申请日：2002-09-11
申请人： Eiichi Suzuki , Masaki Okamoto , Seitaro Tajima , Hiroshi Suzuki , Katsuyoshi Harada
发明人： Eiichi Suzuki , Masaki Okamoto , Seitaro Tajima , Hiroshi Suzuki , Katsuyoshi Harada
IPC分类号： C07F7/18 , C07F7/04 , C07F7/08
CPC分类号： C07F7/1876 , C07F7/1804
摘要： An object of the present invention is to provide a process of producing alkoxysilanes, which does not use a chlorosilane as the intermediate raw material, is improved in view of the environment, and is satisfactory with respect to the yield of a desired material. The present invention is concerned with a process of producing an alkoxysilane including hydrosilylating (A) an organosilicon compound having at least one hydrogen-silicon bond and at least one alkoxy group and (B) an organic compound having a carbon-carbon unsaturated bond in vapor phase in the presence of a mixture containing a hydrosilylation catalyst and a polyalkylene glycol and supported on a carrier, thereby adding hydrogen and silicon of the compound (A) to the carbon-carbon unsaturated bond in the compound (B).
摘要翻译：本发明的目的是提供一种制备不使用氯硅烷作为中间原料的烷氧基硅烷的方法，其环境方面得到改善，并且对于所需材料的产率而言是令人满意的。本发明涉及一种制备烷氧基硅烷的方法，该方法包括使（A）具有至少一个氢 - 硅键和至少一个烷氧基的有机硅化合物和（B）在蒸气中具有碳 - 碳不饱和键的有机化合物在含有氢化硅烷化催化剂和聚亚烷基二醇的混合物存在下，负载在载体上，从而将化合物（A）的氢和硅加入化合物（B）中的碳 - 碳不饱和键。

10. 发明授权

US06796874B2 Toy vehicle with shock absorbing steering mechanism 失效
标题翻译：具有减震转向机构的玩具车
公开(公告)号：US06796874B2
公开(公告)日：2004-09-28
申请号：US09842142
申请日：2001-04-26
申请人： Katsuyoshi Harada
发明人： Katsuyoshi Harada
IPC分类号： A63H1736
CPC分类号： A63H17/36
摘要： A remote control running toy comprises a pair of uprights (24), each having a kingpin (22) for steerably supporting the wheels (20); and a steering mechanism (32) which is coupled through steering rods (30) with the uprights (24); wherein the running toy comprises a coil-shaped spring member (40) for absorbing a shock transmitted via the uprights (22) to the steering rods (28). Thereby, the remote control running toy is provided, which is able to prevent the steering rods from being damaged, even if a strong shock acts onto the front wheels, thus improving the reliability of the running toy.
摘要翻译：遥控器运行玩具包括一对立柱（24），每个立柱具有用于可转向地支撑车轮（20）的中心销（22）; 以及通过转向杆（30）与立柱（24）联接的转向机构（32）; 其中跑步玩具包括用于吸收通过立柱（22）传递到转向杆（28）的冲击的螺旋形弹簧构件（40）。由此，即使在前轮上产生强烈的冲击，也能够防止转向杆受到损伤，从而提高跑步玩具的可靠性。

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