专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08486792B2 Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semiconductor device 有权
标题翻译：氧化硅膜的成膜方法，氧化硅膜，半导体装置及半导体装置的制造方法
公开(公告)号：US08486792B2
公开(公告)日：2013-07-16
申请号：US12992209
申请日：2009-05-11
申请人： Hirokazu Ueda , Yoshinobu Tanaka , Yusuke Ohsawa , Toshihisa Nozawa , Takaaki Matsuoka
发明人： Hirokazu Ueda , Yoshinobu Tanaka , Yusuke Ohsawa , Toshihisa Nozawa , Takaaki Matsuoka
IPC分类号： H01L21/336 , H01L21/76 , H01L21/302
CPC分类号： H01L21/76224 , C23C16/402 , C23C16/511 , H01L21/02164 , H01L21/02274 , H01L21/28273 , H01L21/31612
摘要： A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber (2) of a plasma processing apparatus (1). A microwave is supplied into the chamber (2), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.
摘要翻译：将硅化合物气体，氧化气体和稀有气体供给到等离子体处理装置（1）的室（2）中。微波供应到室（2）中，并且在目标衬底上用微波产生的等离子体形成氧化硅膜。稀有气体的分压比为硅化合物气体，氧化气体和稀有气体的总气体压力的10％以上，硅化合物气体和氧化气体的有效流量比（氧化气体 /硅化合物气体）不小于3但不大于11。

2. 发明申请

US20110074013A1 FILM FORMING METHOD OF SILICON OXIDE FILM, SILICON OXIDE FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：硅氧烷膜，硅氧烷膜，半导体器件的薄膜形成方法和半导体器件的制造方法
公开(公告)号：US20110074013A1
公开(公告)日：2011-03-31
申请号：US12992209
申请日：2009-05-11
申请人： Hirokazu Ueda , Yoshinobu Tanaka , Yusuke Ohsawa , Toshihisa Nozawa , Takaaki Matsuoka
发明人： Hirokazu Ueda , Yoshinobu Tanaka , Yusuke Ohsawa , Toshihisa Nozawa , Takaaki Matsuoka
IPC分类号： H01L21/31 , C01B33/113 , H01L23/48
CPC分类号： H01L21/76224 , C23C16/402 , C23C16/511 , H01L21/02164 , H01L21/02274 , H01L21/28273 , H01L21/31612
摘要： A silicon compound gas, an oxidizing gas, and a rare gas are supplied into a chamber (2) of a plasma processing apparatus (1). A microwave is supplied into the chamber (2), and a silicon oxide film is formed on a target substrate with plasma generated by the microwave. A partial pressure ratio of the rare gas is 10% or more of a total gas pressure of the silicon compound gas, the oxidizing gas, and the rare gas, and an effective flow ratio of the silicon compound gas and the oxidizing gas (oxidizing gas/silicon compound gas) is not less than 3 but not more than 11.
摘要翻译：将硅化合物气体，氧化气体和稀有气体供给到等离子体处理装置（1）的室（2）中。微波供应到室（2）中，并且在目标衬底上用微波产生的等离子体形成氧化硅膜。稀有气体的分压比为硅化合物气体，氧化气体和稀有气体的总气体压力的10％以上，硅化合物气体和氧化气体的有效流量比（氧化气体 /硅化合物气体）不小于3但不大于11。

3. 发明申请

US20120003842A1 METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成硅氧烷膜的方法和制造半导体器件的方法
公开(公告)号：US20120003842A1
公开(公告)日：2012-01-05
申请号：US13202108
申请日：2009-12-10
申请人： Hirokazu Ueda , Yusuke Ohsawa , Yoshinobu Tanaka
发明人： Hirokazu Ueda , Yusuke Ohsawa , Yoshinobu Tanaka
IPC分类号： H01L21/316 , C23C16/56 , C23C16/46 , C23C16/511 , C23C16/40 , C23C16/455
CPC分类号： H01L21/31612 , C23C16/402 , C23C16/511 , H01J37/32192 , H01J2237/2001 , H01L21/02164 , H01L21/02274 , H01L21/0234 , H01L21/28185 , H01L21/28194 , H01L29/51 , H01L29/7833
摘要： There is provided a silicon oxide film forming method including forming a silicon oxide film on a processing target substrate W by supplying a silicon compound gas, an oxidizing gas and a rare gas into a processing chamber 32 while maintaining a surface temperature of a holding table 34 capable of holding thereon the processing target substrate W at a temperature equal to or lower than about 300° C. and by generating microwave plasma within the processing chamber 32, and performing a plasma process on the silicon oxide film formed on the processing target substrate W by supplying an oxidizing gas and a rare gas into the processing chamber 32 and by generating microwave plasma within the processing chamber 32.
摘要翻译：提供一种氧化硅膜形成方法，其包括在处理对象基板W上形成氧化硅膜，通过将硅化合物气体，氧化气体和稀有气体供给到处理室32中同时保持保持台34的表面温度能够在等于或低于约300℃的温度下保持处理对象基板W，并且在处理室32内产生微波等离子体，并对形成在处理对象基板W上的氧化硅膜进行等离子体处理通过向处理室32供给氧化气体和稀有气体，并在处理室32内产生微波等离子体。

4. 发明申请

US20120190211A1 FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, INSULATING FILM AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：薄膜成型方法，半导体器件制造方法，绝缘膜和半导体器件
公开(公告)号：US20120190211A1
公开(公告)日：2012-07-26
申请号：US13496563
申请日：2010-09-09
申请人： Hirokazu Ueda , Yusuke Ohsawa , Masahiro Horigome
发明人： Hirokazu Ueda , Yusuke Ohsawa , Masahiro Horigome
IPC分类号： H01L21/31 , H01L21/30
CPC分类号： C23C16/401 , C23C16/345 , C23C16/45542 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/28194 , H01L29/66181
摘要： In a film forming method, firstly, a processing target substrate W as a base of a semiconductor device is held on a mounting table 34 by an electrostatic chuck. Then, a film forming gas is adsorbed onto the processing target substrate W (a gas adsorption process) ((A) of FIG. 6). Thereafter, the inside of the processing chamber 32 is evacuated in order to remove residues of the film forming gas ((B) of FIG. 6). Upon the completion of the first exhaust process, a plasma process using microwave is performed ((C) of FIG. 6). Upon the completion of the plasma process, the inside of the processing chamber 32 is evacuated in order to remove an unreacted reactant gas and the like ((D) of FIG. 6). These series of steps (A) to (D) are repeated in this sequence until a desired film thickness is obtained.
摘要翻译：在成膜方法中，首先，作为半导体装置的基底的处理对象基板W由静电卡盘保持在安装台34上。然后，成膜气体被吸附到处理对象基板W（气体吸附工序）（图6的（A））上。此后，为了除去成膜气体的残留物（图6的（B）），处理室32的内部被抽真空。在第一排气处理完成时，进行使用微波的等离子体处理（图6的（C））。在完成等离子体处理之后，为了除去未反应的反应气体等（图6的（D）），将处理室32的内部抽真空。以该顺序重复这些一系列步骤（A）至（D），直至获得所需的膜厚度。

5. 发明申请

US20110294232A1 METHOD FOR RECOVERING DAMAGE OF LOW DIELECTRIC INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：回收低介电绝缘膜损伤的方法及制造半导体器件的方法
公开(公告)号：US20110294232A1
公开(公告)日：2011-12-01
申请号：US13205939
申请日：2011-08-09
申请人： Ryuichi Asako , Yusuke Ohsawa
发明人： Ryuichi Asako , Yusuke Ohsawa
IPC分类号： H01L21/30
CPC分类号： H01L21/76825 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults.A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST. 2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST. 3).
摘要翻译：提供了能够充分回收低介电绝缘膜的电特性同时抑制掩埋金属的氧化并产生图案默认的损坏恢复方法。通过处理在低介电绝缘膜的表面产生的损坏的官能团被疏水官能团代替（ST.2）。通过使用紫外线加热处理（ST.3）回收通过置换处理在低介电绝缘膜的表面产生的致密层下的受损组分。

6. 发明授权

US08058153B2 Method for recovering damage of low dielectric insulating film for manufacturing semiconductor device 有权
标题翻译：用于回收用于制造半导体器件的低介电绝缘膜的损伤的方法
公开(公告)号：US08058153B2
公开(公告)日：2011-11-15
申请号：US12137827
申请日：2008-06-12
申请人： Ryuichi Asako , Yusuke Ohsawa
发明人： Ryuichi Asako , Yusuke Ohsawa
IPC分类号： H01L21/322
CPC分类号： H01L21/76825 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults.A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST. 2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST. 3).
摘要翻译：提供了能够充分回收低介电绝缘膜的电特性同时抑制掩埋金属的氧化并产生图案默认的损坏恢复方法。通过处理在低介电绝缘膜的表面产生的损坏的官能团被疏水官能团代替（ST.2）。通过使用紫外线加热处理（ST.3）回收通过置换处理在低介电绝缘膜的表面产生的致密层下的受损组分。

7. 发明授权

US08808562B2 Dry metal etching method 有权
标题翻译：干金属蚀刻方法
公开(公告)号：US08808562B2
公开(公告)日：2014-08-19
申请号：US13230721
申请日：2011-09-12
申请人： Yusuke Ohsawa , Hiroto Ohtake , Eiji Suzuki , Kaushik Arun Kumar , Andrew W. Metz
发明人： Yusuke Ohsawa , Hiroto Ohtake , Eiji Suzuki , Kaushik Arun Kumar , Andrew W. Metz
IPC分类号： B44C1/22 , H01J37/32 , H01L21/3213
CPC分类号： H01L21/32136 , H01J37/3222 , H01J37/32238 , H01J37/32247
摘要： A method of etching an aluminum-containing layer on a substrate is described. The method includes forming plasma from a process composition containing a halogen element, and exposing the substrate to the plasma to etch the aluminum-containing layer. The method may additionally include exposing the substrate to an oxygen-containing environment to oxidize a surface of the aluminum-containing layer and control an etch rate of the aluminum-containing layer. The method may further include forming first plasma from a process composition containing HBr and an additive gas having the chemical formula CxHyRz (wherein R is a halogen element, x and y are equal to unity or greater, and z is equal to zero or greater), forming second plasma from a process composition containing HBr, and exposing the substrate to the first plasma and the second plasma to etch the aluminum-containing layer.
摘要翻译：描述了蚀刻基板上的含铝层的方法。该方法包括从含有卤素元素的工艺组合物形成等离子体，并将该衬底暴露于等离子体以蚀刻含铝层。该方法可以另外包括将基底暴露于含氧环境以氧化含铝层的表面并控制含铝层的蚀刻速率。该方法可以进一步包括从含有HBr的工艺组合物和具有化学式C x H y R z（其中R是卤素元素，x和y等于或大于1，并且z等于或大于0）的添加剂气体形成第一等离子体，从含有HBr的工艺组合物形成第二等离子体，并将衬底暴露于第一等离子体和第二等离子体以蚀刻含铝层。

8. 发明申请

US20080311728A1 METHOD FOR RECOVERING DAMAGE OF LOW DIELECTRIC INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：回收低介电绝缘膜损伤的方法及制造半导体器件的方法
公开(公告)号：US20080311728A1
公开(公告)日：2008-12-18
申请号：US12137827
申请日：2008-06-12
申请人： Ryuichi Asako , Yusuke Ohsawa
发明人： Ryuichi Asako , Yusuke Ohsawa
IPC分类号： H01L21/322 , H01J27/00
CPC分类号： H01L21/76825 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults.A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST. 2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST. 3).
摘要翻译：提供了能够充分回收低介电绝缘膜的电特性同时抑制掩埋金属的氧化并产生图案默认的损坏恢复方法。通过处理在低介电绝缘膜的表面产生的损坏的官能团被疏水官能团代替（ST.2）。通过使用紫外线加热处理（ST.3）回收通过置换处理在低介电绝缘膜的表面产生的致密层下的受损组分。

9. 发明授权

US08288252B2 Method for recovering damaged components in lower region of low dielectric insulating film 有权
标题翻译：低介电绝缘膜下部区域损坏元件回收方法
公开(公告)号：US08288252B2
公开(公告)日：2012-10-16
申请号：US13205939
申请日：2011-08-09
申请人： Ryuichi Asako , Yusuke Ohsawa
发明人： Ryuichi Asako , Yusuke Ohsawa
IPC分类号： H01L21/322
CPC分类号： H01L21/76825 , H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： There is provided a damage recovery method capable of recovering electrical characteristics of a low dielectric insulating film sufficiently while suppressing oxidation of buried metal and generation of pattern defaults.A damaged functional group generated in a surface of the low dielectric insulating film by a processing is substituted with a hydrophobic functional group (ST. 2). A damaged component present under a dense layer generated in the surface of the low dielectric insulating film by the substitution process is recovered by using an ultraviolet heating process (ST. 3).
摘要翻译：提供了能够充分回收低介电绝缘膜的电特性同时抑制掩埋金属的氧化并产生图案默认的损坏恢复方法。通过处理在低介电绝缘膜的表面产生的损坏的官能团被疏水官能团代替（ST.2）。通过使用紫外线加热处理（ST.3）回收通过置换处理在低介电绝缘膜的表面产生的致密层下的受损组分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式