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1. 发明申请

US20080264331A1 Manufacturing Method and Manufacturing Apparatus of a Group III Nitride Crystal 有权
标题翻译：第III族氮化物晶体的制造方法和制造装置
公开(公告)号：US20080264331A1
公开(公告)日：2008-10-30
申请号：US11596250
申请日：2006-03-13
申请人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
发明人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
IPC分类号： C30B15/00
CPC分类号： C30B19/02 , C30B9/00 , C30B15/00 , C30B15/32 , C30B17/00 , C30B19/06 , C30B29/403 , C30B29/406 , Y10T117/1024 , Y10T117/1032
摘要： A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.
摘要翻译：一种用于在保持容器中的晶种上制造III族氮化物晶体的方法，其中容纳含有III族金属，碱金属和氮的熔体。该制造方法包括以下步骤：使晶种与熔体接触，将晶种的环境设定为偏离晶体生长条件的第一状态，同时在所述晶种与所述晶种接触的状态下熔融，增加熔体中的氮浓度，并且当熔体的氮浓度达到适于种植晶种的浓度时，将晶种的环境设定为适合晶体生长的第二状态。

2. 发明授权

US09376763B2 Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen 有权
标题翻译： III族氮化物晶体的制造方法和制造装置，利用含有III族金属，碱金属和氮的熔体
公开(公告)号：US09376763B2
公开(公告)日：2016-06-28
申请号：US13679499
申请日：2012-11-16
申请人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
发明人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
IPC分类号： C30B19/10 , C30B19/02 , C30B9/00 , C30B15/00 , C30B15/32 , C30B17/00 , C30B29/40 , C30B19/06
CPC分类号： C30B19/02 , C30B9/00 , C30B15/00 , C30B15/32 , C30B17/00 , C30B19/06 , C30B29/403 , C30B29/406 , Y10T117/1024 , Y10T117/1032
摘要： A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.
摘要翻译：一种用于在保持容器中的晶种上制造III族氮化物晶体的方法，其中容纳含有III族金属，碱金属和氮的熔体。该制造方法包括以下步骤：使晶种与熔体接触，将晶种的环境设定为偏离晶体生长条件的第一状态，同时在所述晶种与所述晶种接触的状态下熔融，增加熔体中的氮浓度，并且当熔体的氮浓度达到适于种植晶种的浓度时，将晶种的环境设定为适合晶体生长的第二状态。

3. 发明申请

US20130074762A1 MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF A GROUP III NITRIDE CRYSTAL 审中-公开
标题翻译：第三类氮化物晶体的制造方法和制造装置
公开(公告)号：US20130074762A1
公开(公告)日：2013-03-28
申请号：US13679499
申请日：2012-11-16
申请人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
发明人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
IPC分类号： C30B19/02 , C30B19/06
CPC分类号： C30B19/02 , C30B9/00 , C30B15/00 , C30B15/32 , C30B17/00 , C30B19/06 , C30B29/403 , C30B29/406 , Y10T117/1024 , Y10T117/1032
摘要： A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.
摘要翻译：一种用于在保持容器中的晶种上制造III族氮化物晶体的方法，其中容纳含有III族金属，碱金属和氮的熔体。该制造方法包括以下步骤：使晶种与熔体接触，将晶种的环境设定为偏离晶体生长条件的第一状态，同时在所述晶种与所述晶种接触的状态下熔融，增加熔体中的氮浓度，并且当熔体的氮浓度达到适于种植晶种的浓度时，将晶种的环境设定为适合晶体生长的第二状态。

4. 发明授权

US08337617B2 Manufacturing method and manufacturing apparatus of a group III nitride crystal 有权
标题翻译： III族氮化物晶体的制造方法和制造装置
公开(公告)号：US08337617B2
公开(公告)日：2012-12-25
申请号：US11596250
申请日：2006-03-13
申请人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
发明人： Hirokazu Iwata , Seiji Sarayama , Minoru Fukuda , Tetsuya Takahashi , Akira Takahashi
IPC分类号： C30B9/00
CPC分类号： C30B19/02 , C30B9/00 , C30B15/00 , C30B15/32 , C30B17/00 , C30B19/06 , C30B29/403 , C30B29/406 , Y10T117/1024 , Y10T117/1032
摘要： A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.
摘要翻译：一种用于在保持容器中的晶种上制造III族氮化物晶体的方法，其中容纳含有III族金属，碱金属和氮的熔体。该制造方法包括以下步骤：使晶种与熔体接触，将晶种的环境设定为偏离晶体生长条件的第一状态，同时在所述晶种与所述晶种接触的状态下熔融，增加熔体中的氮浓度，并且当熔体的氮浓度达到适于种植晶种的浓度时，将晶种的环境设定为适合晶体生长的第二状态。

5. 发明授权

US09206173B2 Heterocyclic compounds for the treatment of stress-related conditions 有权
标题翻译：用于治疗压力相关病症的杂环化合物
公开(公告)号：US09206173B2
公开(公告)日：2015-12-08
申请号：US13322399
申请日：2010-05-27
申请人： Akira Takahashi , Masaki Suzuki , Yuichi Nakamura , Yohji Sakurai
发明人： Akira Takahashi , Masaki Suzuki , Yuichi Nakamura , Yohji Sakurai
IPC分类号： A01N43/00 , A61K31/00 , C07D471/04 , A61K31/519 , C07D491/048 , C07D491/056 , C07D495/04 , C07D519/00
CPC分类号： C07D471/04 , A61K31/519 , C07D491/048 , C07D491/056 , C07D495/04 , C07D519/00
摘要： The present invention provides a novel heterocyclic compound. A heterocyclic compound represented by general formula (1) wherein, R1 and R2, each independently represent hydrogen; a phenyl lower alkyl group that may have a substituent(s) selected from the group consisting of a lower alkyl group and the like on a benzene ring and/or a lower alkyl group; or a cyclo C3-C8 alkyl lower alkyl group; or the like; R3 represents a lower alkynyl group or the like; R4 represents a phenyl group that may have a substituent(s) selected from the group consisting of a 1,3,4-oxadiazolyl group that may have e.g., halogen or a heterocyclic group selected from pyridyl group and the like; the heterocyclic group may have at least one substituent(s) selected from a lower alkoxy group and the like or a salt thereof.
摘要翻译：本发明提供了一种新的杂环化合物。由通式（1）表示的杂环化合物，其中，R 1和R 2各自独立地表示氢; 在苯环和/或低级烷基上可以具有选自低级烷基等的取代基的苯基低级烷基; 或环C 3 -C 8烷基低级烷基; 或类似物; R3表示低级炔基等; R4表示可以具有选自可以具有例如卤素或选自吡啶基等的杂环基的1,3,4-恶二唑基的取代基的苯基; 杂环基可以具有至少一个选自低级烷氧基等的取代基或其盐。

6. 发明申请

US20150307477A1 THERAPEUTIC COMPOUNDS AND RELATED METHODS OF USE 有权
标题翻译：治疗化合物及其相关使用方法
公开(公告)号：US20150307477A1
公开(公告)日：2015-10-29
申请号：US14692434
申请日：2015-04-21
申请人： Masaki Suzuki , Kazumi Kondo , Muneaki Kurimura , Krishna Reddy Valluru , Akira Takahashi , Takeshi Kuroda , Haruka Takahashi , Tae Fukushima , Shin Miyamura , Indranath Ghosh , Abhishek Dogra , Geraldine Harriman , Amy Elder , Satoshi Shimizu , Kevin J. Hodgetts , Jason S. Newcom
发明人： Masaki Suzuki , Kazumi Kondo , Muneaki Kurimura , Krishna Reddy Valluru , Akira Takahashi , Takeshi Kuroda , Haruka Takahashi , Tae Fukushima , Shin Miyamura , Indranath Ghosh , Abhishek Dogra , Geraldine Harriman , Amy Elder , Satoshi Shimizu , Kevin J. Hodgetts , Jason S. Newcom
IPC分类号： C07D401/14 , A61K31/517 , A61K45/06 , C07D401/04
CPC分类号： C07D401/04 , A61K31/517 , A61K45/06 , C07D401/14 , C07D403/04 , C07D405/14 , C07D409/14 , C07D413/14 , C07D417/14 , C07D487/04 , C07D495/04
摘要： Methods of treating disorders using compounds that modulate striatal-enriched tyrosine phosphatase (STEP) are described herein. Exemplary disorders include schizophrenia and cognitive deficit.
摘要翻译：本文描述了使用调节纹状体富含酪氨酸磷酸酶的化合物（STEP）治疗病症的方法。示例性疾病包括精神分裂症和认知缺陷。

7. 发明授权

US09073890B2 Therapeutic compounds and related methods of use 有权
标题翻译：治疗化合物及相关使用方法
公开(公告)号：US09073890B2
公开(公告)日：2015-07-07
申请号：US13520018
申请日：2010-12-30
申请人： Masaki Suzuki , Kazumi Kondo , Muneaki Kurimura , Krishna Reddy Valluru , Akira Takahashi , Takeshi Kuroda , Haruka Takahashi , Tae Fukushima , Shin Miyamura , Indranath Ghosh , Abhishek Dogra , Geraldine Harriman , Amy Elder , Satoshi Shimizu , Kevin J. Hodgetts , Jason S. Newcom
发明人： Masaki Suzuki , Kazumi Kondo , Muneaki Kurimura , Krishna Reddy Valluru , Akira Takahashi , Takeshi Kuroda , Haruka Takahashi , Tae Fukushima , Shin Miyamura , Indranath Ghosh , Abhishek Dogra , Geraldine Harriman , Amy Elder , Satoshi Shimizu , Kevin J. Hodgetts , Jason S. Newcom
IPC分类号： A01N43/90 , A61K31/519 , A01N43/54 , A61K31/517 , C07D491/00 , C07D495/00 , C07D401/00 , C07D403/00 , C07D413/00 , C07D417/00 , C07D419/00 , C07D401/04 , C07D401/14 , C07D403/04 , C07D405/14 , C07D409/14 , C07D413/14 , C07D417/14 , C07D487/04 , C07D495/04
CPC分类号： C07D401/04 , A61K31/517 , A61K45/06 , C07D401/14 , C07D403/04 , C07D405/14 , C07D409/14 , C07D413/14 , C07D417/14 , C07D487/04 , C07D495/04
摘要： Compounds, pharmaceutical compositions containing the compounds, and methods of using the compounds to treat a disorder, e.g., schizophrenia and cognitive deficit, in a subject are described herein. The compounds disclosed herein include quinoline and quinazoline-containing compounds that modulate striatal-enriched tyrosine phosphatase (STEP) activity.
摘要翻译：本文描述了化合物，含有化合物的药物组合物，以及使用该化合物治疗受试者中的精神分裂症和认知缺陷症的方法。本文公开的化合物包括调节富含纹状体的酪氨酸磷酸酶（STEP）活性的喹啉和喹唑啉化合物。

8. 发明授权

US08754642B2 Magnetic balance type current sensor 有权
标题翻译：磁平衡式电流传感器
公开(公告)号：US08754642B2
公开(公告)日：2014-06-17
申请号：US13300064
申请日：2011-11-18
申请人： Yosuke Ide , Masahiro Iizuka , Masamichi Saito , Akira Takahashi , Hideharu Matsuo , Tsuyoshi Nojima , Shigenobu Miyajima , Naoki Sakatsume , Kenji Ichinohe , Yoshihiro Nishiyama , Tatsuya Kogure , Hidekazu Kobayashi
发明人： Yosuke Ide , Masahiro Iizuka , Masamichi Saito , Akira Takahashi , Hideharu Matsuo , Tsuyoshi Nojima , Shigenobu Miyajima , Naoki Sakatsume , Kenji Ichinohe , Yoshihiro Nishiyama , Tatsuya Kogure , Hidekazu Kobayashi
IPC分类号： G01R33/09
CPC分类号： B82Y25/00 , G01R15/205 , G01R31/006 , G01R33/093
摘要： A magnetic balance type current sensor includes a magnetoresistance effect element whose resistance value changes owing to the application of an induction magnetic field from a current to be measured; a feedback coil disposed in the vicinity of the magnetoresistance effect element and generating a cancelling magnetic field cancelling out the induction magnetic field; a magnetic field detection bridge circuit including two outputs causing a voltage difference corresponding to the induction magnetic field to occur; and a magnetic shield attenuating the induction magnetic field and enhancing the cancelling magnetic field, wherein, on the basis of the current flowing through the feedback coil at the time of an equilibrium state in which the induction magnetic field and the cancelling magnetic field are cancelled out, the current to be measured is measured, wherein the feedback coil, the magnetic shield, and the magnetic field detection bridge circuit are formed on a same substrate.
摘要翻译：磁平衡型电流传感器包括磁阻效应元件，其电阻值由于施加来自待测量电流的感应磁场而改变; 设置在所述磁阻效应元件附近的反馈线圈，并产生抵消所述感应磁场的抵消磁场; 包括导致与感应磁场相对应的电压差的两个输出的磁场检测桥电路; 以及磁屏蔽，其使感应磁场衰减并增强抵消磁场，其中，基于在抵消感应磁场和抵消磁场的平衡状态时流过反馈线圈的电流测量待测量的电流，其中反馈线圈，磁屏蔽和磁场检测桥接电路形成在同一衬底上。

9. 发明授权

US08521416B2 Vehicle control apparatus and vehicle control method 有权
标题翻译：车辆控制装置和车辆控制方法
公开(公告)号：US08521416B2
公开(公告)日：2013-08-27
申请号：US13043984
申请日：2011-03-09
申请人： Yuki Nakada , Toshiya Oosawa , Akira Takahashi
发明人： Yuki Nakada , Toshiya Oosawa , Akira Takahashi
IPC分类号： F41G9/00 , G06F17/10 , G06G7/78
CPC分类号： B60W30/12 , B60T2201/08 , B60T2201/083 , B60T2201/087 , B62D15/025
摘要： A vehicle control apparatus includes a first section that recognizes a lane boundary line of a lane in which a vehicle is traveling. A second section recognizes a present position of a predetermined reference point of the vehicle. A third section calculates a predicted position of the reference point, wherein the predicted position is a predetermined interval ahead of the present position. A fourth calculates an imaginary lane boundary line, wherein the imaginary lane boundary line is tangent to the lane boundary line at a point close to the predicted position. A fifth section performs a control of preventing the vehicle from deviating from the lane by controlling the vehicle depending on positional relationship between the vehicle and the lane boundary line. A sixth section selectively permits and suppresses the control depending on positional relationship among the imaginary lane boundary line, the present position, and the predicted position.
摘要翻译：车辆控制装置包括识别车辆行驶的车道的车道边界线的第一部分。第二部分识别车辆的预定参考点的当前位置。第三部分计算参考点的预测位置，其中预测位置是在当前位置之前的预定间隔。第四计算虚拟车道边界线，其中虚拟车道边界线在靠近预测位置的点处与车道边界线相切。第五部分通过根据车辆与车道边界线之间的位置关系控制车辆来执行防止车辆偏离车道的控制。第六部分根据虚拟车道边界线，当前位置和预测位置之间的位置关系选择性地允许和抑制控制。

10. 发明授权

US08477382B2 Apparatus and method for transmitting data in a multi-channel system 有权
标题翻译：用于在多声道系统中传输数据的装置和方法
公开(公告)号：US08477382B2
公开(公告)日：2013-07-02
申请号：US12761254
申请日：2010-04-15
申请人： Akira Takahashi , Hirokazu Takahashi
发明人： Akira Takahashi , Hirokazu Takahashi
IPC分类号： H04N1/36
CPC分类号： H04N1/1938 , H04N2201/0081 , H04N2201/0458
摘要： Conventional analog front ends or AFEs for scanners are implemented using multiple integrated circuits or ICs. As a result, there is typically a problem of skew (due at least in part to manufacturing process variations) for these different ICs in the AFE. Here, an AFE is provided which serializes input data so as to compensate for skew.
摘要翻译：用于扫描仪的常规模拟前端或AFE使用多个集成电路或IC实现。因此，AFE中这些不同的IC通常存在偏斜（至少部分由于制造工艺变化）的问题。这里，提供了一种AFE，其串行化输入数据以补偿偏斜。

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