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1. 发明申请

US20070102692A1 Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20070102692A1
公开(公告)日：2007-05-10
申请号：US10551918
申请日：2005-07-11
申请人： Hirokazu Asahara , Mitsuhiko Sakai , Toshio Nishida , Masayuki Sonobe
发明人： Hirokazu Asahara , Mitsuhiko Sakai , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L29/06
CPC分类号： H01L33/387
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion, a front surface electrode provided on one side of the semiconductor light emitting portion, an electrically conductive substrate provided on the other side of the semiconductor light emitting portion, the electrically conductive substrate being transparent to a wavelength of light emitted from the semiconductor light emitting portion, a rear surface electrode having a pattern in ohmic contact with a first region of a back surface of the electrically conductive substrate opposite from the semiconductor light emitting portion, and a rear surface insulation layer covering a second region of the back surface of the electrically conductive substrate other than the first region, the rear surface insulation layer being transparent to the wavelength of the light emitted from the semiconductor light emitting portion.
摘要翻译：半导体发光器件包括半导体发光部分，设置在半导体发光部分一侧的前表面电极，设置在半导体发光部分另一侧的导电基片，导电基片对从半导体发光部发射的光的波长，与导电性基板的与半导体发光部相反的背面的第一区域欧姆接触的图案的背面电极，以及背面绝缘层覆盖所述导电基板的除了所述第一区域以外的所述背面的第二区域，所述背面绝缘层对于从所述半导体发光部发出的光的波长透明。

2. 发明申请

US20060273335A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20060273335A1
公开(公告)日：2006-12-07
申请号：US10551922
申请日：2005-07-11
申请人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
发明人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.
摘要翻译：半导体发光器件包括具有第一导电性的第一接触层，第二导电性的第二接触层和夹在第一和第二接触层之间的有源层的半导体发光部。该装置还包括透明电极，其基本上完全覆盖第二接触层的与第二接触层的表面欧姆接触的表面，并且对于从半导体发光部分发射的光的波长是透明的，并且金属反射膜其与透明电极的大致整个表面相对并且电连接到透明电极，并且反射从半导体发光部分发射的光并且透过透明电极朝向半导体发光部分。

3. 发明授权

US07375380B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US07375380B2
公开(公告)日：2008-05-20
申请号：US10551922
申请日：2005-07-11
申请人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
发明人： Hirokazu Asahara , Mitsuhiko Sakai , Masayuki Sonobe , Toshio Nishida
IPC分类号： H01L27/15 , H01L29/22
CPC分类号： H01L33/42 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a semiconductor light emitting portion having a first contact layer of a first conductivity, a second contact layer of a second conductivity and an active layer sandwiched between the first and second contact layers. The device further includes a transparent electrode which substantially entirely covers a surface of the second contact layer in ohmic contact with the surface of the second contact layer and is transparent to a wavelength of light emitted from the semiconductor light emitting portion, and a metal reflection film which is opposed to substantially the entire surface of the transparent electrode and electrically connected to the transparent electrode, and reflects the light emitted from the semiconductor light emitting portion and passing through the transparent electrode toward the semiconductor light emitting portion.
摘要翻译：半导体发光器件包括具有第一导电性的第一接触层，第二导电性的第二接触层和夹在第一和第二接触层之间的有源层的半导体发光部。该装置还包括透明电极，其基本上完全覆盖第二接触层的与第二接触层的表面欧姆接触的表面，并且对于从半导体发光部分发射的光的波长是透明的，并且金属反射膜其与透明电极的大致整个表面相对并且电连接到透明电极，并且反射从半导体发光部分发射的光并且透过透明电极朝向半导体发光部分。

4. 发明申请

US20090206357A1 Semiconductor Light Emitting Device 审中-公开
标题翻译：半导体发光装置
公开(公告)号：US20090206357A1
公开(公告)日：2009-08-20
申请号：US11884456
申请日：2006-02-15
申请人： Norikazu Ito , Kazuaki Tsutsumi , Toshio Nishida , Masayuki Sonobe , Mitsuhiko Sakai , Atsushi Yamaguchi
发明人： Norikazu Ito , Kazuaki Tsutsumi , Toshio Nishida , Masayuki Sonobe , Mitsuhiko Sakai , Atsushi Yamaguchi
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate (1), a semiconductor lamination portion (6) made of nitride semiconductor, including a first conductivity type layer (p-type layer (5)) and a second conductivity type layer (n-type layer (3)), is formed, a p-side electrode (8) is provided through a light transmitting conductive layer (7) thereon electrically connected to the p-type layer (5), and an n-side electrode (9) is provided electrically connected to the n-type layer (3) of the lower layer side of the semiconductor lamination portion(6). A mesa-like semiconductor lamination portion (6a) is formed by removing a part of the semiconductor lamination portion (6) around a chip by etching, and the mesa-like semiconductor lamination portion (6a) is formed such that a corner part having an angle of 90 degrees or less is rounded and has a curved line in a plan shape, thereby not to have an angle of 90 degrees or less on corner parts.
摘要翻译：提供了一种氮化物半导体发光器件，其中即使当施加反向电压或者甚至长时间操作时，半导体层也不容易损坏，并且通过在制造器件时防止半导体层劣化，可以获得优异的可靠性。在基板（1）的表面上，由氮化物半导体构成的包括第一导电型层（p型层（5））和第二导电型层（n型层（3））的半导体层叠部（6））），通过其上与p型层（5）电连接的透光导电层（7）设置p侧电极（8），并且n侧电极（9）电气地连接到半导体层叠部分（6）的下层侧的n型层（3）。通过蚀刻去除芯片周围的半导体层叠部分（6）的一部分形成台面状半导体层叠部（6a），并且形成台面状半导体层叠部（6a），使得具有 90度以下的角度是圆形的，并且具有平面形状的曲线，从而在角部不具有90度或更小的角度。

5. 发明申请

US20070284598A1 Semiconductor Light Emitting Device 审中-公开
标题翻译：半导体发光装置
公开(公告)号：US20070284598A1
公开(公告)日：2007-12-13
申请号：US11661631
申请日：2005-09-01
申请人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
发明人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a highly reliable semiconductor light emitting device in which disconnection of wires does not occur in case that a semiconductor light emitting device capable of being used in place of incandescent lamps or fluorescent lamps is formed in a monolithic type by forming a plurality of light emitting units on one substrate. A plurality of light emitting units (1) are formed by electrically separating a semiconductor lamination portion (17) which is so formed on a substrate (11) as to form a light emitting layer, and the light emitting units (1) are respectively connected in series and/or parallel by wiring films (3). For obtaining the light emitting units (1) from the semiconductor lamination portion a separation groove (17a) and an insulation film (21) deposited in the separation groove (17a) are formed in the semiconductor lamination portion (17). The separation groove (17a) is formed in such a position that the surfaces of the semiconductor lamination portion (17) on both sides of the separation groove (17a) are in the substantially same plane, and the wiring film (3) is formed on the separation groove (17a) through the insulating film (21).
摘要翻译：提供了一种高度可靠的半导体发光器件，其中在通过形成多个光以单片形式形成能够用于代替白炽灯或荧光灯的半导体发光器件的情况下不会发生电线断开一个衬底上的发光单元。多个发光单元（1）通过将形成在基板（11）上的半导体层叠部分（17）电隔离以形成发光层而形成，并且发光单元（1）分别连接通过布线膜（3）串联和/或并联。为了从半导体层叠部分获得发光单元（1），在半导体层叠部分（17）中形成分离槽（17a）和沉积在分离槽（17a）中的绝缘膜（21）。分离槽（17a）形成为使分离槽（17a）两侧的半导体层叠部（17）的表面处于基本相同的平面的位置，配线膜（3）为通过绝缘膜（21）形成在分离槽（17a）上。

6. 发明申请

US20070257268A1 Semiconductor Light Emitting Device 有权
标题翻译：半导体发光装置
公开(公告)号：US20070257268A1
公开(公告)日：2007-11-08
申请号：US11662541
申请日：2005-09-12
申请人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
发明人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/62 , H01L2224/24 , H01L2924/12044 , H01L2924/00
摘要： There is provided a highly reliable semiconductor light emitting device even in using for street lamps or traffic signals, which can be used in place of electric lamps or fluorescent lamps by protecting from surges such as static electricity or the like. A plurality of light emitting units (1) are formed, by forming a semiconductor lamination portion by laminating semiconductor layers on a substrate so as to form a light emitting layer, by electrically separating the semiconductor lamination portion into a plurality, and by providing a pair of electrodes (19) and (20). The light emitting units (1) are respectively connected in series and/or in parallel with wiring films (3). An inductor (8) absorbing surges is connected, in series, to the plurality of light emitting units (1) connected in series between electrode pads (4a) and (4b) connected to an external power source. For an example, the inductor (8) is formed by arranging the plurality of light emitting units (1) in a whirl shape.
摘要翻译：提供了一种高可靠性的半导体发光装置，即使用于路灯或交通信号灯，也可以通过防止诸如静电等的浪涌而代替电灯或荧光灯。通过在基板上层叠半导体层以形成发光层，通过将半导体层叠部分电分离成多个并通过提供一对形成半导体层叠部分而形成多个发光单元（1）的电极（19）和（20）。发光单元（1）分别与布线膜（3）串联和/或并联连接。吸收浪涌的电感器（8）串联连接到串联连接到连接到外部电源的电极焊盘（4a）和（4b）之间的多个发光单元（1）。例如，电感器（8）通过将多个发光单元（1）布置成旋转形状而形成。

7. 发明授权

US08030669B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08030669B2
公开(公告)日：2011-10-04
申请号：US11662541
申请日：2005-09-12
申请人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
发明人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/62 , H01L2224/24 , H01L2924/12044 , H01L2924/00
摘要： There is provided a highly reliable semiconductor light emitting device even in using for street lamps or traffic signals, which can be used in place of electric lamps or fluorescent lamps by protecting from surges such as static electricity or the like. A plurality of light emitting units (1) are formed, by forming a semiconductor lamination portion by laminating semiconductor layers on a substrate so as to form a light emitting layer, by electrically separating the semiconductor lamination portion into a plurality, and by providing a pair of electrodes (19) and (20). The light emitting units (1) are respectively connected in series and/or in parallel with wiring films (3). An inductor (8) absorbing surges is connected, in series, to the plurality of light emitting units (1) connected in series between electrode pads (4a) and (4b) connected to an external power source. For an example, the inductor (8) is formed by arranging the plurality of light emitting units (1) in a whirl shape.
摘要翻译：提供了一种高可靠性的半导体发光装置，即使用于路灯或交通信号灯，也可以通过防止诸如静电等的浪涌而代替电灯或荧光灯。通过在基板上层叠半导体层以形成发光层，通过将半导体层叠部分电分离成多个并通过提供一对形成半导体层叠部分而形成多个发光单元（1）的电极（19）和（20）。发光单元（1）分别与布线膜（3）串联和/或并联连接。吸收浪涌的电感器（8）串联连接到串联连接到连接到外部电源的电极焊盘（4a）和（4b）之间的多个发光单元（1）。例如，电感器（8）通过将多个发光单元（1）布置成旋转形状而形成。

8. 发明申请

US20070278502A1 Semiconductor Light Emitting Device 审中-公开
标题翻译：半导体发光装置
公开(公告)号：US20070278502A1
公开(公告)日：2007-12-06
申请号：US11662542
申请日：2005-09-12
申请人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
发明人： Yukio Shakuda , Toshio Nishida , Masayuki Sonobe
IPC分类号： H01L33/00
CPC分类号： C09K11/584 , C09K11/642 , C09K11/7701 , H01L27/156 , H01L33/50 , H01L33/54 , H01L33/62 , H01L2224/24 , H01L2924/12044 , H01L2924/00
摘要： There is provided a semiconductor light emitting device which can prevent flickering in illumination due to an alternative current drive, and sensing incongruity at a time of turning off a switch, by providing anti-flickering means in itself, when it is assembled in an illumination device without any extra parts therein. A plurality of light emitting units (1) are formed, by forming a semiconductor lamination portion (17) by laminating semiconductor layers on a substrate (11) so as to form a light emitting layer, by electrically separating the semiconductor lamination portion (17) into a plurality of units, and by providing a pair of electrodes (19) and (20). The light emitting units (1) are respectively connected in series and/or parallel with a wiring film (3). A fluorescent layer (6) containing a fluorescent material having an afterglow time of 10 msec or more and 1 sec or less and/or a layer containing a phosphorescent glass material are formed at a light emitting surface side of the plurality of light emitting units (1).
摘要翻译：提供了一种半导体发光装置，其可以防止由于替代电流驱动而在照明中闪烁，并且在关闭开关时感测到不协调，通过在其组装在照明装置中时提供防闪烁装置没有任何额外的零件。通过在基板（11）上层叠半导体层以形成发光层，通过将半导体层叠部（17）电分离而形成半导体层叠部（17），形成多个发光单元（1）并且通过提供一对电极（19）和（20）来形成多个单元。发光单元（1）分别与布线膜（3）串联和/或并联连接。在多个发光单元的发光面侧形成含有余辉时间为10msec以上1sec以下的荧光体和/或含有磷光玻璃材料的层的荧光体层（6） 1）。

9. 发明申请

US20070115227A1 SEMICONDUCTOR LASER DRIVING CIRCUIT, LIGHT EMITTING DEVICE, AND DISK DRIVE 失效
标题翻译：半导体激光驱动电路，发光装置和磁盘驱动器
公开(公告)号：US20070115227A1
公开(公告)日：2007-05-24
申请号：US11560977
申请日：2006-11-17
申请人： Toshio Nishida , Sho Maruyama
发明人： Toshio Nishida , Sho Maruyama
IPC分类号： H01S3/00 , G09G3/32
CPC分类号： H01S5/042 , H01S5/06804
摘要： A semiconductor laser driving circuit has a circuit protection function at low temperature and includes a voltage current converter that converts an input voltage Vin, which is determined according to a desired light brightness of the semiconductor laser to be driven, into a current. A current limiter limits an output current of the voltage current converter to a specified current value or less. An output amplifier amplifies the output current of the voltage current converter and supplies the amplified current as a drive current to the semiconductor laser. A temperature detection circuit detects a low temperature state and, in the low temperature state, decreases the specified current value of the current limiter.
摘要翻译：半导体激光器驱动电路在低温下具有电路保护功能，并且包括电压电流转换器，其将根据要驱动的半导体激光器的期望光亮确定的输入电压Vin转换为电流。电流限制器将电压电流转换器的输出电流限制在规定的电流值以下。输出放大器放大电压电流转换器的输出电流，并将放大的电流作为驱动电流提供给半导体激光器。温度检测电路检测低温状态，在低温状态下，降低限流器的规定电流值。

10. 发明申请

US20060273329A1 Semiconductor device 有权
公开(公告)号：US20060273329A1
公开(公告)日：2006-12-07
申请号：US11447567
申请日：2006-06-05
申请人： Hiroaki Ohta , Toshio Nishida , Daisuke Nakagawa
发明人： Hiroaki Ohta , Toshio Nishida , Daisuke Nakagawa
IPC分类号： H01L33/00 , H01L31/12 , H01L29/22 , H01L29/24 , H01L27/15 , H01L29/26
CPC分类号： H01L29/155 , B82Y20/00 , H01L29/2003 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/3215 , H01S5/3216 , H01S5/34333
摘要： The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.

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