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    • 3. 发明申请
    • SOI wafer and method for producing the same
    • SOI晶片及其制造方法
    • US20070054459A1
    • 2007-03-08
    • US11593009
    • 2006-11-06
    • Hiroji AgaKiyoshi Mitani
    • Hiroji AgaKiyoshi Mitani
    • H01L21/8222
    • H01L21/76254
    • The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI wafer where a surface of a base wafer is exposed is narrower than 1 mm and a density of pit-shaped defects having a size of 0.19 μm or more existing in a surface of a SOI layer detected by a LPD inspection is 1 counts/cm2 or less, and also provides a method for producing the SOI wafer. Thereby, there is provided a SOI wafer produced by an ion implantation delamination method wherein generation of SOI islands generated in delamination can be suppressed and a defect density of LPDs existing in a surface of the SOI wafer can be reduced, and a method for producing the same, so that device failure can be reduced.
    • 本发明提供一种通过离子注入分层方法制造的SOI晶片,其中在SOI晶片的边缘部分中产生的露台部分中的SOI岛区域的宽度基底晶片暴露的距离窄于1mm, 存在于通过LPD检查检测的SOI层的表面中的具有0.19μm以上的尺寸的凹坑状缺陷的密度为1个/ cm 2以下,并且还提供了一种用于 生产SOI晶片。 因此,提供了通过离子注入分层方法制造的SOI晶片,其中可以抑制在分层中产生的SOI岛的产生,并且可以减少存在于SOI晶片的表面中的LPD的缺陷密度,以及制造 相同,从而可以减少设备故障。
    • 5. 发明授权
    • SOI wafer and method for the preparation thereof
    • SOI晶片及其制备方法
    • US5998281A
    • 1999-12-07
    • US698457
    • 1996-08-15
    • Hiroji AgaKiyoshi MitaniMasatake Katayama
    • Hiroji AgaKiyoshi MitaniMasatake Katayama
    • H01L21/20H01L21/762
    • H01L21/76251H01L21/2007Y10S148/012Y10S438/977
    • Proposed is an improvement in the process for the preparation of an SOI wafer comprising the steps of: forming an oxidized surface film on the mirror-polished surface of a first mirror-polished semiconductor silicon wafer as the base wafer; forming a doped layer with a dopant in a high concentration on the mirror-polished surface of a second mirror-polished semiconductor silicon wafer as the bond wafer; bringing the base wafer and the bond wafer into contact each with the other at the oxidized surface film and the doped layer; and subjecting the thus contacted semiconductor silicon wafers to a heat treatment to effect integral bonding thereof into a precursor of an SOI wafer. The improvement of the invention is accomplished by polishing the surface of the doped layer on the bond wafer before the base wafer and the bond wafer are joined by contacting at the oxidized surface film and the doped layer so that a great improvement can be obtained in the bonding strength between layers.
    • 提出了制备SOI晶片的方法的改进,包括以下步骤:在作为基底晶片的第一镜面抛光半导体硅晶片的镜面抛光表面上形成氧化的表面膜; 在作为接合晶片的第二镜面抛光半导体硅晶片的镜面抛光表面上形成具有高浓度掺杂剂的掺杂层; 使基底晶片和接合晶片在氧化的表面膜和掺杂层处彼此接触; 以及对这样接触的半导体硅晶片进行热处理以使其整体结合到SOI晶片的前体中。 通过在基底晶片和接合晶片通过在氧化的表面膜和掺杂层之间接触而接合基底晶片和接合晶片之前,通过抛光接合晶片上的掺杂层的表面来实现本发明的改进,使得可以在 层之间的粘结强度。
    • 6. 发明授权
    • SOI wafer producing method, and wafer separating jig
    • SOI晶片制造方法和晶片分离夹具
    • US06998329B2
    • 2006-02-14
    • US10483613
    • 2002-07-24
    • Hiroji AgaHiroyuki TakahashiKiyoshi Mitani
    • Hiroji AgaHiroyuki TakahashiKiyoshi Mitani
    • H01L21/30B65G49/07
    • H01L21/67092H01L21/76254Y10S414/135
    • In the process of fabricating an SOI wafer based on the Smart Cut® Process, a stack 34 of an SOI wafer 39 and a residual wafer 38 are separated into the individual wafers using a wafer separation jig 1 of this invention. The wafer separation jig 1 comprises a supporting plane 1p on which the stack 34 is supported in the thickness-wise direction, and a stepped portion 2 disposed on the supporting plane 1p, and having a height adjusted so as to stop movement-by-sliding of the lower wafer of the stack, but so as to allow movement-by-sliding of the upper wafer relative to the lower wafer. Both wafers are separated from each other by inclining the supporting plane 1p with the stack 34 placed thereon, so as to allow the upper wafer to move by sliding as being driven by its own weight in the in-plane direction relative to the lower wafer. This method is successful in effectively suppressing friction between the wafers, and thus in preventing the wafer surface from being scratched.
    • 在制造基于智能切割工艺的SOI晶片的过程中,使用本发明的晶片分离夹具1将SOI晶片39的堆叠34和残余晶片38分离成单个晶片。 晶片分离夹具1包括在其上沿着​​厚度方向支撑着堆叠34的支撑平面1p和设置在支撑平面1p上的阶梯部分2,并且具有调节以便停止移动的高度 - 堆叠的下部晶片的滑动,但是允许上部晶片相对于下部晶片的滑动。 通过使支撑平面1p与放置在其上的叠层34相互倾斜来将两个晶片彼此分离,以便允许上晶片通过其自重由相对于下晶片的面内方向驱动的滑动而滑动 。 该方法成功地有效地抑制晶片之间的摩擦,从而防止晶片表面被划伤。
    • 7. 发明申请
    • Method of producing soi wafer and soi wafer
    • 生产硅晶片和硅片的方法
    • US20050118789A1
    • 2005-06-02
    • US10507175
    • 2003-12-25
    • Hiroji AgaIsao YokokawaKiyotaka TakanoKiyoshi Mitani
    • Hiroji AgaIsao YokokawaKiyotaka TakanoKiyoshi Mitani
    • H01L21/02H01L21/265H01L21/762H01L27/12H01L21/30H01L21/46
    • H01L21/26533H01L21/76254
    • The present invention relates to a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by forming an oxide film on a surface of at least one of a bond wafer and a base wafer, bonding the bond wafer to the base wafer through the formed oxide film, and making the bond wafer into a thin film, wherein after the oxide film is formed so that a total thickness of the oxide film formed on the surface of at least one of the bond wafer and the base wafer is thicker than a thickness of the buried oxide film that the SOI wafer to be produced has, the bond wafer is bonded to the base wafer through the formed oxide film, the bond wafer is made into a thin film to form an SOI layer, and thereafter, an obtained bonded wafer is subjected to heat treatment to reduce a thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which blisters and voids are not generated even if the thickness of the buried oxide film is thinned, and its SOI layer has extremely good crystallinity.
    • 本发明涉及一种制造SOI晶片的方法,其中通过在接合晶片和基底晶片中的至少一个的表面上形成氧化膜,在掩埋氧化膜上形成SOI层,将接合晶片接合到 通过形成的氧化膜的基底晶片,并将接合晶片制成薄膜,其中在形成氧化物膜之后,使得形成在至少一个接合晶片和基底的表面上的氧化膜的总厚度 晶片比所制造的SOI晶片的埋入氧化膜的厚度厚,通过形成的氧化膜将接合晶片接合到基底晶片,将接合晶片制成薄膜以形成SOI层, 然后,对获得的接合晶片进行热处理以减小掩埋氧化膜的厚度。 因此,可以提供一种制造SOI晶片的方法,其中即使掩埋氧化膜的厚度变薄也不会产生起泡和空隙,并且其SOI层具有非常好的结晶度。
    • 10. 发明申请
    • Soi wafer manufacturing method
    • Soi晶圆制造方法
    • US20060040469A1
    • 2006-02-23
    • US10522413
    • 2003-07-16
    • Hiroji AgaKiyoshi Mitani
    • Hiroji AgaKiyoshi Mitani
    • H01L21/30H01L21/425
    • H01L21/265H01L21/26506H01L21/76224H01L21/76254
    • In order to adjust thickness of a bonded silicon single crystal film 15 depending of thickness of an SOI layer 5 to be obtained, depth of formation d1+tx of a separatory ion implanted layer 4, measured from a first main surface J, in the separatory ion implanted layer formation step is adjusted through energy of the ion implantation. Dose of the ion implantation is set smaller as the depth of formation measured from the first main surface J becomes smaller. A smaller dose results in a smaller surface roughness of the separation surface, and makes it possible to reduce polishing stock removal of the separation surface of the bonded silicon single crystal film in the planarization step. Uniformity in the thickness of the SOI layer can consequently be improved even for the case where a thin SOI layer has to be formed. The present invention is therefore successful in providing a method of fabricating an SOI wafer capable of suppressing variations in the intra-wafer and inter-wafer uniformity of the thickness of the SOI layer to a sufficiently low level, even for the case where a required level of the thickness of the SOI layer is extremely small.
    • 为了根据所获得的SOI层5的厚度来调整键合硅单晶膜15的厚度,从第一主表面J测量的分离离子注入层4的形成深度d 1 + t x, 通过离子注入的能量来调节分离离子注入层形成步骤。 随着从第一主表面J测量的深度变小,离子注入的剂量变小。 较小的剂量导致分离表面的较小的表面粗糙度,并且使得可以在平坦化步骤中减少接合的硅单晶膜的分离表面的抛光原料去除。 因此,即使在必须形成薄的SOI层的情况下,也可以提高SOI层的厚度的均匀性。 因此,本发明成功地提供了一种制造SOI晶片的方法,其能够将SOI层的厚度的晶片内和晶片间均匀度的均匀度抑制到足够低的水平,即使在要求的水平的情况下 的SOI层的厚度非常小。