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1. 发明授权

US06846718B1 Method for producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US06846718B1
公开(公告)日：2005-01-25
申请号：US09857803
申请日：2000-10-13
申请人： Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
发明人： Hiroji Aga , Naoto Tate , Susumu Kuwabara , Kiyoshi Mitani
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.
摘要翻译：一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理加工型炉。优选地，首先进行RTA装置的热处理。通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

2. 发明授权

US06372609B1 Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method 有权
标题翻译：通过氢离子分离法制造SOI晶片的方法和通过该方法制造的SOI晶片
公开(公告)号：US06372609B1
公开(公告)日：2002-04-16
申请号：US09555687
申请日：2000-06-02
申请人： Hiroji Aga , Naoto Tate , Kiyoshi Mitani
发明人： Hiroji Aga , Naoto Tate , Kiyoshi Mitani
IPC分类号： H01L2130
CPC分类号： H01L21/76254
摘要： There is provided a method of fabricating an SOI wafer having high quality by hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination and surface roughness are removed maintaining thickness uniformity of the SOI layer. According to the present invention, there are provided a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after bonding heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after delaminating heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; and an SOI wafer fabricated by the methods.
摘要翻译：提供了一种通过氢离子分层方法制造具有高质量的SOI晶片的方法，其中去除了在分层之后残留在SOI层的表面上的损伤层和表面粗糙度，保持了SOI层的厚度均匀性。根据本发明，提供了一种通过氢离子分层方法制造SOI晶片的方法，其中通过在结合热处理之后的氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后进行还原气氛的热处理。通过氢分离法制造SOI晶片的方法，其中通过在分解热处理之后在氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后在还原气氛中进行热处理执行以及通过该方法制造的SOI晶片。

3. 发明申请

US20050042840A1 Method for producing SOI wafer and SOI wafer 有权
公开(公告)号：US20050042840A1
公开(公告)日：2005-02-24
申请号：US10948234
申请日：2004-09-24
申请人： Hiroji Aga , Naota Tate , Susumu Kuwabara , Kiyoshi Mitani
发明人： Hiroji Aga , Naota Tate , Susumu Kuwabara , Kiyoshi Mitani
IPC分类号： H01L21/762 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.

4. 发明授权

US07176102B2 Method for producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US07176102B2
公开(公告)日：2007-02-13
申请号：US10948234
申请日：2004-09-24
申请人： Hiroji Aga , Naota Tate , Susumu Kuwabara , Kiyoshi Mitani
发明人： Hiroji Aga , Naota Tate , Susumu Kuwabara , Kiyoshi Mitani
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.
摘要翻译：一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理加工型炉。优选地，首先进行RTA装置的热处理。通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

5. 发明授权

US06596610B1 Method for reclaiming delaminated wafer and reclaimed delaminated wafer 有权
标题翻译：回收分层晶片和再生分层晶片的方法
公开(公告)号：US06596610B1
公开(公告)日：2003-07-22
申请号：US09889933
申请日：2001-07-25
申请人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
发明人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
IPC分类号： H01L2130
CPC分类号： H01L21/02032 , H01L21/76254 , H01L22/34 , Y10S438/906 , Y10S438/974 , Y10S438/977
摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.
摘要翻译：在通过离子注入和分层方法回收在接合晶片的制造中作为副产物生产的分层晶片的方法中，至少在分层晶片的倒角部分上的离子注入层被去除，然后，晶圆被抛光。具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。或者，对剥离后的晶片进行热处理，然后进行抛光。提供了一种用于回收分层晶片的方法，其提供了即使经受了良好产率的热处理也不产生颗粒的高质量的再生晶片，以及这种再生晶片。

6. 发明授权

US06720640B2 Method for reclaiming delaminated wafer and reclaimed delaminated wafer 有权
标题翻译：回收分层晶片和再生分层晶片的方法
公开(公告)号：US06720640B2
公开(公告)日：2004-04-13
申请号：US10447103
申请日：2003-05-29
申请人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
发明人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
IPC分类号： H01L2906
CPC分类号： H01L21/02032 , H01L21/76254 , H01L22/34 , Y10S438/906 , Y10S438/974 , Y10S438/977
摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.
摘要翻译：在通过离子注入和分层方法回收在接合晶片的制造中作为副产物生产的分层晶片的方法中，至少在分层晶片的倒角部分上的离子注入层被去除，然后，晶圆被抛光。具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。或者，对剥离后的晶片进行热处理，然后进行抛光。提供了一种用于回收分层晶片的方法，其提供了即使经受了良好产率的热处理也不产生颗粒的高品质再生晶片，以及这种再生晶片。

7. 发明授权

US07959731B2 Method for producing semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US07959731B2
公开(公告)日：2011-06-14
申请号：US11665977
申请日：2005-11-02
申请人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
发明人： Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
IPC分类号： C30B25/22
CPC分类号： H01L21/26506 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L21/76254 , Y10S117/915
摘要： A method for producing a semiconductor wafer, including epitaxially growing a Si1-XGeX layer (0
摘要翻译：一种制造半导体晶片的方法，包括在硅单晶晶片的表面上外延生长Si1-XGeX层（0

8. 发明申请

US20070054459A1 SOI wafer and method for producing the same 审中-公开
标题翻译： SOI晶片及其制造方法
公开(公告)号：US20070054459A1
公开(公告)日：2007-03-08
申请号：US11593009
申请日：2006-11-06
申请人： Hiroji Aga , Kiyoshi Mitani
发明人： Hiroji Aga , Kiyoshi Mitani
IPC分类号： H01L21/8222
CPC分类号： H01L21/76254
摘要： The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI wafer where a surface of a base wafer is exposed is narrower than 1 mm and a density of pit-shaped defects having a size of 0.19 μm or more existing in a surface of a SOI layer detected by a LPD inspection is 1 counts/cm2 or less, and also provides a method for producing the SOI wafer. Thereby, there is provided a SOI wafer produced by an ion implantation delamination method wherein generation of SOI islands generated in delamination can be suppressed and a defect density of LPDs existing in a surface of the SOI wafer can be reduced, and a method for producing the same, so that device failure can be reduced.
摘要翻译：本发明提供一种通过离子注入分层方法制造的SOI晶片，其中在SOI晶片的边缘部分中产生的露台部分中的SOI岛区域的宽度基底晶片暴露的距离窄于1mm，存在于通过LPD检查检测的SOI层的表面中的具有0.19μm以上的尺寸的凹坑状缺陷的密度为1个/ cm 2以下，并且还提供了一种用于生产SOI晶片。因此，提供了通过离子注入分层方法制造的SOI晶片，其中可以抑制在分层中产生的SOI岛的产生，并且可以减少存在于SOI晶片的表面中的LPD的缺陷密度，以及制造相同，从而可以减少设备故障。

9. 发明授权

US06238990B1 Method for heat treatment of SOI wafer and SOI wafer heat-treated by the method 有权
标题翻译：通过该方法对SOI晶片和SOI晶片进行热处理的方法
公开(公告)号：US06238990B1
公开(公告)日：2001-05-29
申请号：US09185901
申请日：1998-11-04
申请人： Hiroji Aga , Norihiro Kobayashi , Kiyoshi Mitani
发明人： Hiroji Aga , Norihiro Kobayashi , Kiyoshi Mitani
IPC分类号： H02L21336
CPC分类号： H01L21/3226 , H01L21/324 , H01L21/76256
摘要： A method for heat-treating an SOI wafer in a reducing atmosphere, wherein the SOI wafer is heat-treated through use of a rapid thermal annealer at a temperature within the range of 1100° C. to 1300° C. for 1 sec to 60 sec. The reducing atmosphere is preferably an atmosphere of 100% hydrogen or a mixed gas atmosphere containing hydrogen and argon. The heat treatment is preferably performed for 1 sec to 30 sec. The method eliminates COPs in an SOI layer of an SOI wafer in accordance with a hydrogen annealing method, while preventing etching of the SOI layer and a buried oxide layer.
摘要翻译：一种用于在还原气氛中对SOI晶片进行热处理的方法，其中通过使用快速热退火炉在1100℃至1300℃的温度范围内对SOI晶片进行热处理1秒至60秒秒还原气氛优选为100％氢气或含有氢气和氩气的混合气体气氛。优选进行1秒〜30秒的热处理。该方法根据氢退火方法消除SOI晶片的SOI层中的COP，同时防止SOI层和掩埋氧化物层的蚀刻。

10. 发明授权

US5998281A SOI wafer and method for the preparation thereof 失效
标题翻译： SOI晶片及其制备方法
公开(公告)号：US5998281A
公开(公告)日：1999-12-07
申请号：US698457
申请日：1996-08-15
申请人： Hiroji Aga , Kiyoshi Mitani , Masatake Katayama
发明人： Hiroji Aga , Kiyoshi Mitani , Masatake Katayama
IPC分类号： H01L21/20 , H01L21/762
CPC分类号： H01L21/76251 , H01L21/2007 , Y10S148/012 , Y10S438/977
摘要： Proposed is an improvement in the process for the preparation of an SOI wafer comprising the steps of: forming an oxidized surface film on the mirror-polished surface of a first mirror-polished semiconductor silicon wafer as the base wafer; forming a doped layer with a dopant in a high concentration on the mirror-polished surface of a second mirror-polished semiconductor silicon wafer as the bond wafer; bringing the base wafer and the bond wafer into contact each with the other at the oxidized surface film and the doped layer; and subjecting the thus contacted semiconductor silicon wafers to a heat treatment to effect integral bonding thereof into a precursor of an SOI wafer. The improvement of the invention is accomplished by polishing the surface of the doped layer on the bond wafer before the base wafer and the bond wafer are joined by contacting at the oxidized surface film and the doped layer so that a great improvement can be obtained in the bonding strength between layers.
摘要翻译：提出了制备SOI晶片的方法的改进，包括以下步骤：在作为基底晶片的第一镜面抛光半导体硅晶片的镜面抛光表面上形成氧化的表面膜; 在作为接合晶片的第二镜面抛光半导体硅晶片的镜面抛光表面上形成具有高浓度掺杂剂的掺杂层; 使基底晶片和接合晶片在氧化的表面膜和掺杂层处彼此接触; 以及对这样接触的半导体硅晶片进行热处理以使其整体结合到SOI晶片的前体中。通过在基底晶片和接合晶片通过在氧化的表面膜和掺杂层之间接触而接合基底晶片和接合晶片之前，通过抛光接合晶片上的掺杂层的表面来实现本发明的改进，使得可以在层之间的粘结强度。

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