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1. 发明授权

US6024888A Vapor selective etching method and apparatus 失效
标题翻译：蒸气选择蚀刻方法和装置
公开(公告)号：US6024888A
公开(公告)日：2000-02-15
申请号：US748427
申请日：1996-11-13
申请人： Hirohito Watanabe , Mitsusuke Kyogoku
发明人： Hirohito Watanabe , Mitsusuke Kyogoku
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , B44C1/22
CPC分类号： H01L21/31116
摘要： In order to study an etching rate difference of a layer formed mainly with silicon dioxide on a wafer, a thermal oxide film (113) and layers of BSG (117), BPSG (125), and PSG (129) are laminated on a wafer and are etched in a gaseous etching atmosphere consisting essentially of hydrogen fluoride or a mixture of hydrogen fluoride and water vapor. The layers are etched with various etching rates which are higher than that of the thermal oxide film. The etching rate difference is a difference between the etching rate of each layer and an etching rate of the thermal oxide film. The layers may include impurities, such as boron and phosphorus, collectively as a part of a layer material of each layer. The etching rate difference depends on the layer material. Preferably, the gaseous etching atmosphere should have a reduced pressure. Alternatively, a water vapor partial pressure should not be greater than 2000 Pa. As a further alternative, either the layer or the gaseous etching atmosphere should be heated.
摘要翻译：为了研究在晶片上主要由二氧化硅形成的层的蚀刻速率差，将热氧化膜（113）和BSG（117），BPSG（125）和PSG（129）的层叠在晶片上并且在基本上由氟化氢或氟化氢和水蒸气的混合物组成的气体蚀刻气氛中进行蚀刻。以比热氧化膜高的蚀刻速率蚀刻各层。蚀刻速度差是各层的蚀刻速率与热氧化膜的蚀刻速度之差。这些层可以包括诸如硼和磷的杂质，共同地作为每层的层材料的一部分。蚀刻速率差取决于层材料。优选地，气体蚀刻气氛应当具有减压。或者，水蒸气分压不应大于2000Pa。作为另外的选择，应该加热层或气体蚀刻气氛。

2. 发明授权

US5658417A HF vapor selective etching method and apparatus 失效
标题翻译： HF蒸气选择蚀刻方法和装置
公开(公告)号：US5658417A
公开(公告)日：1997-08-19
申请号：US447557
申请日：1995-05-23
申请人： Hirohito Watanabe , Mitsusuke Kyogoku
发明人： Hirohito Watanabe , Mitsusuke Kyogoku
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/306
CPC分类号： H01L21/31116
摘要： In order to study an etching rate difference of a layer formed mainly with silicon dioxide on a wafer, a thermal oxide film (113) and layers of BSG (117), BPSG (125), and PSG (129) are laminated on a wafer and are etched in a gaseous etching atmosphere consisting essentially of hydrogen fluoride or a mixture of hydrogen fluoride and water vapor. The layers are etched with various etching rates which are higher than that of the thermal oxide film. The etching rate difference is a difference between the etching rate of each layer and an etching rate of the thermal oxide film. The layers may include impurities, such as boron and phosphorus, collectively as a part of a layer material of each layer. The etching rate difference depends on the layer material. Preferably, the gaseous etching atmosphere should have a reduced pressure. Alternatively, a water vapor partial pressure should not be greater than 2000 Pa. As a further alternative, either the layer or the gaseous etching atmosphere should be heated.
摘要翻译：为了研究在晶片上主要由二氧化硅形成的层的蚀刻速率差，将热氧化膜（113）和BSG（117），BPSG（125）和PSG（129）的层叠在晶片上并且在基本上由氟化氢或氟化氢和水蒸气的混合物组成的气体蚀刻气氛中进行蚀刻。以比热氧化膜高的蚀刻速率蚀刻各层。蚀刻速度差是各层的蚀刻速率与热氧化膜的蚀刻速度之差。这些层可以包括诸如硼和磷的杂质，共同地作为每层的层材料的一部分。蚀刻速率差取决于层材料。优选地，气体蚀刻气氛应当具有减压。或者，水蒸气分压不应大于2000Pa。作为另外的选择，应该加热层或气体蚀刻气氛。

3. 发明授权

US6053686A Device and method for load locking for semiconductor processing 有权
标题翻译：用于半导体加工的负载锁定的装置和方法
公开(公告)号：US6053686A
公开(公告)日：2000-04-25
申请号：US246921
申请日：1999-02-09
申请人： Mitsusuke Kyogoku
发明人： Mitsusuke Kyogoku
IPC分类号： B65G49/07 , H01L21/677 , B65G1/06
CPC分类号： H01L21/67748 , H01L21/67751 , Y10S414/137 , Y10S414/139 , Y10S414/141
摘要： There is provided a load-lock device which allows high productivity and occupies a small space. There is provided a load-lock device which stands by with objects to be processed loaded thereon in order to cooperate with a transport mechanism in transporting the objects to be processed to processing chambers in order. The load-lock device according to the present invention comprises chamber means, wafer holding means for loading a plurality of the objects to be processed which is movable up and down in the chamber and flange means provided on a side of the wafer holding means which is engaged with a part of an inner wall of the chamber to divide the space inside the chamber into two isolated rooms. The transport mechanism is connected to a side of the chamber means substantially in the center thereof, and the flange means is coupled to the side of the wafer holding means substantially in the center thereof. The flange means includes sealing means which is engaged with a part of the inner wall of the chamber to achieve complete sealing. The load-lock device according to the invention allows a gate valve between the transport mechanism and the load-lock device to be removed to double the efficiency of the prior art at least.
摘要翻译：提供了一种加载锁定装置，其允许高生产率并占据小的空间。提供了一种装载锁定装置，其装载有待处理的物体，以便与传送机构配合，以便将待处理的物体依次传送到处理室。根据本发明的装载锁定装置包括腔室装置，用于装载可在腔室中上下移动的多个被处理物体的晶片保持装置和设置在晶片保持装置的侧面上的法兰装置，与室的内壁的一部分接合以将室内的空间分成两个隔离的房间。传送机构大致在其中心连接到腔室装置的一侧，并且凸缘装置基本在其中心处连接到晶片保持装置的侧面。凸缘装置包括密封装置，其与室的内壁的一部分接合以实现完全密封。根据本发明的装载锁定装置允许移除输送机构和装载锁定装置之间的闸阀，以至少使现有技术的效率提高一倍。

4. 发明授权

US5484483A Thermal treatment apparatus 失效
标题翻译：热处理设备
公开(公告)号：US5484483A
公开(公告)日：1996-01-16
申请号：US192147
申请日：1994-02-04
申请人： Mitsusuke Kyogoku
发明人： Mitsusuke Kyogoku
IPC分类号： C30B33/00 , F27D99/00 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67757 , C30B33/00 , F27D99/0073 , Y10S414/14
摘要： A thermal treatment apparatus for semiconductor materials is configured to prevent a metal contamination caused by a metal manifold and maintain a sufficient sealing and isolation effect between a transfer system containing chamber and a reaction chamber even when there exists a significant difference in pressure between the two chambers. A vent (7) having an inner diameter of 50 millimeters or greater for evacuating an inner section of a reaction chamber (1) made by quartz is provided in the reaction chamber (1). A seal flange is a double structure of a quartz flange (9) and a metal flange (10), and the metal flange is not emerged in the reaction chamber while the reaction chamber is sealed. Additionally, after the seal flange has been moved at a sealing position, a mobile section (12) is further moved such that the seal flange can not be pushed away by a pressure in the reaction chamber.
摘要翻译：用于半导体材料的热处理装置被配置为防止由金属歧管引起的金属污染，并且即使当两个室之间存在显着的压力差时，也保持转印系统容纳室和反应室之间的充分的密封和隔离效果。在反应室（1）中设置有用于排出由石英制成的反应室（1）内部的内径为50毫米或更大的通气孔（7）。密封凸缘是石英凸缘（9）和金属凸缘（10）的双重结构，并且在反应室被密封的同时金属凸缘不会出现在反应室中。此外，在密封凸缘已经在密封位置移动之后，移动部分（12）进一步移动，使得密封凸缘不能被反应室中的压力推开。

5. 发明授权

US4596934A Electron beam apparatus with improved specimen holder 失效
标题翻译：具有改进样品架的电子束装置
公开(公告)号：US4596934A
公开(公告)日：1986-06-24
申请号：US479172
申请日：1983-03-28
申请人： Takashi Yanaka , Kazuo Ohsawa , Mitsusuke Kyogoku
发明人： Takashi Yanaka , Kazuo Ohsawa , Mitsusuke Kyogoku
IPC分类号： H01J37/141 , H01J37/20 , G21K5/10
CPC分类号： H01J37/20
摘要： In an electron beam apparatus such as a transmission electron microscope, a specimen holder device which comprises a specimen holder member and a holding rod connected thereto is withdrawably inserted in a pole-gap defined between upper and lower poles of an objective lens of the electron beam apparatus. An opening having a greater diameter than that of the pole end face is formed in the specimen holding member at a center portion for receiving therein a specimen mesh of a reduced thickness. A recess is formed in the specimen holding member at that portion which is caused to pass between the upper and lower magnetic poles upon insertion and withdrawal of the specimen to and from the interpole gap so that a region resulting from the formation of the recess has a reduced thickness as compared with the remaining region of the specimen holder member. Inter-pole gap of the objective lens is thus reduced to increase resolving power thereof. The specimen holder member can be mounted in a frame-like supporting member rotatably about an axis which extends perpendicularly to the center axis of the holding rod, while the frame-like supporting member being inclinable around the axis of the holding rod.
摘要翻译：在诸如透射电子显微镜的电子束装置中，包括样本保持器构件和与其连接的保持杆的样本保持装置可抽出地插入限定在电子束的物镜的上极和下极之间的极间隙中仪器。具有比极端面大的直径的开口形成在用于容纳厚度减小的样品网的中心部分的检体保持构件中。在试样保持构件上形成有在试样与间极间隙插入和取出之间在上部和下部磁极之间通过的部分的凹部，使得由形成凹部的区域具有与样品保持器构件的剩余区域相比减小了厚度。因此物镜的极间间隙减小以提高其分辨能力。样本保持构件可以围绕围绕保持杆的中心轴线垂直延伸的轴线可旋转地安装在框架状支撑构件中，同时框架状支撑构件围绕保持杆的轴线可倾斜。

6. 发明授权

US06743329B1 Sealing mechanism of multi-chamber load-locking device 失效
标题翻译：多室锁定装置的密封机构
公开(公告)号：US06743329B1
公开(公告)日：2004-06-01
申请号：US09650122
申请日：2000-08-29
申请人： Mitsusuke Kyogoku , Takayuki Yamagishi
发明人： Mitsusuke Kyogoku , Takayuki Yamagishi
IPC分类号： H01L2100
CPC分类号： H01L21/67757 , Y10S414/135 , Y10T74/18048
摘要： In a multi-chamber load-locking device which is placed between a loading station which places a wafer cassette which houses semiconductor wafers and a transfer chamber which conveys the semiconductor wafers and in which lock-loading device chamber space is divided into two by the vertical motion of a plate, a device which comprises: sealing means by which the chamber space is selectively divided into two by contacting the plate and a state of no airflow is caused; a cylindrical cam provided with the same axis as that of the chamber; and a rotary actuator dynamically connected with the cylindrical cam, wherein the turning moment of the rotary actuator is converted into the vertical thrust of the axis and the plate rises and descends.
摘要翻译：在放置在容纳半导体晶片的晶片盒的装载站和传送半导体晶片的传送室之间的多室负载锁定装置中，锁定装置室的空间被垂直方向分成两部分板的运动，一种装置，其包括：密封装置，通过使所述室空间通过接触所述板选择性地分成两部分，并且引起无气流的状态; 一个圆柱形凸轮，其具有与腔室相同的轴线; 以及与所述圆筒形凸轮动态连接的旋转执行器，其中所述旋转致动器的转动力矩被转换成所述轴的垂直推力并且所述板升高和下降。

7. 发明授权

US5571330A Load lock chamber for vertical type heat treatment apparatus 失效
标题翻译：垂直式热处理装置的加载锁室
公开(公告)号：US5571330A
公开(公告)日：1996-11-05
申请号：US256504
申请日：1994-09-19
申请人： Mitsusuke Kyogoku
发明人： Mitsusuke Kyogoku
IPC分类号： B65G49/00 , H01L21/00 , H01L21/22 , H01L21/324 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67757 , H01L21/67098 , Y10S414/139
摘要： The present invention is a load lock chamber for a vertical type heat treatment apparatus which has no elevating device which requires the provision of lubricating oil which is a source of particles causing contamination in the chamber. Below a treatment chamber, an intermediate chamber is arranged. A support stand is provided below a boat table for supporting the objects to be processed, which can be loaded into or unloaded from the treatment chamber gastightly through the intermediate chamber. This support stand is mounted on a member movable vertically by means of a feed screw. A bellows is mounted between the intermediate chamber and the movable member.
摘要翻译： PCT No.PCT / JP93 / 01660 Sec。 371日期1994年9月19日 102（e）1994年9月19日PCT PCT 1993年11月12日PCT公布。公开号WO94 / 11898 日期：1994年5月26日本发明是一种垂直式热处理装置的装载锁定室，其不具有需要设置作为在室内产生污染的颗粒源的润滑油的升降装置。在处理室下方设置有中间室。在船台下面设置支撑架，用于支撑被处理物体，其可以气密地通过中间室装载到处理室或从处理室卸载。该支撑架安装在通过进给螺杆可垂直移动的构件上。波纹管安装在中间室和可动件之间。

8. 发明授权

US5509967A Heat treatment apparatus 失效
标题翻译：热处理设备
公开(公告)号：US5509967A
公开(公告)日：1996-04-23
申请号：US256505
申请日：1994-09-08
申请人： Mitsusuke Kyogoku , Osamu Honma
发明人： Mitsusuke Kyogoku , Osamu Honma
IPC分类号： H01L21/205 , H01L21/00 , H01L21/22 , H01L21/31 , H01L21/324 , C23C16/00
CPC分类号： H01L21/67115
摘要： A reduction in the air tightness of a reaction chamber of an apparatus due to thermal degradation of a vacuum seal at the connection seal between the reaction chamber and a manifold is prevented. Contamination of the inside of the chamber from particles produced from heating members of the apparatus is reduced. The wall of the reaction chamber extends to a location sufficiently spaced from the lower end of the heater surrounding the reaction chamber. An exhaust port is provided in the wall to exhaust the reaction chamber.
摘要翻译： PCT No.PCT / JP93 / 01661 Sec。 371日期1994年9月19日 102（e）1994年9月19日PCT PCT 1993年11月12日PCT公布。第WO94 / 11899号公报日期：1994年5月26日。防止了由于真空密封件在反应室和歧管之间的连接密封处的热劣化而使设备的反应室的气密性降低。室内的污染物从装置的加热构件产生的颗粒中被污染减少。反应室的壁延伸到与包围反应室的加热器的下端充分间隔开的位置。排气口设置在壁上以排出反应室。

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