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    • 2. 发明申请
    • Image display system
    • 图像显示系统
    • US20050223099A1
    • 2005-10-06
    • US11067688
    • 2005-03-01
    • Toshiyuki MoritaShinya IguchiHirofumi NaganoYukari Katayama
    • Toshiyuki MoritaShinya IguchiHirofumi NaganoYukari Katayama
    • G09B29/00G06F15/16G06F17/00G06Q10/00G06Q50/00G06Q50/10G06T13/00G06T13/80G09B29/10
    • G06F3/04845G06Q30/0603
    • A display system includes, a server for transmitting data to a map information display device to cause the character to be displayed on a detail information display screen, the map information display device for starting move display animation of the character and transmitting data indicative of move completion to the server, the server for transmitting data to a detail information display device to display the detail information about the shop to which the character is snapped and also transmitting data to display the character on the detail information display screen, the detail information display device for displaying the received detail information about the shop, causing the character to log in on the detail information display screen and to be displayed thereon, and continuously reproducing the move display animation of the character until the character reaches a character display area.
    • 显示系统包括:服务器,用于向地图信息显示装置发送数据,使得将字符显示在细节信息显示屏幕上;地图信息显示装置,用于开始移动显示角色的动画和发送表示移动完成的数据 服务器,用于将数据发送到详细信息显示装置的服务器,以显示关于该字符被卡扣的商店的详细信息,并且还发送数据以在该细节信息显示屏幕上显示该字符;该详细信息显示装置, 显示接收到的关于商店的细节信息,使得角色在细节信息显示屏幕上登录并在其上显示,并且连续地再现该角色的移动显示动画,直到该角色到达一个字符显示区域。
    • 5. 发明授权
    • Nonvolatile memory
    • 非易失性存储器
    • US07817480B2
    • 2010-10-19
    • US12409386
    • 2009-03-23
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G11C5/14
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。
    • 6. 发明授权
    • Nonvolatile memory
    • 非易失性存储器
    • US07366034B2
    • 2008-04-29
    • US11797842
    • 2007-05-08
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G11C7/10
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。
    • 9. 发明授权
    • Nonvolatile memory
    • 非易失性存储器
    • US08223563B2
    • 2012-07-17
    • US13086383
    • 2011-04-13
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • Kenji KozakaiTakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G11C5/14
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。
    • 10. 发明申请
    • NONVOLATILE MEMORY
    • 非易失性存储器
    • US20090187702A1
    • 2009-07-23
    • US12409386
    • 2009-03-23
    • Kenji KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • Kenji KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G06F12/02G06F12/00
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。