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1. 发明授权

US4877574A Method of and apparatus for controlling power of natural circulation reactor 失效
标题翻译：自然循环反应堆功率控制方法及设备
公开(公告)号：US4877574A
公开(公告)日：1989-10-31
申请号：US162987
申请日：1988-03-02
申请人： Hiroaki Suzuki , Yoshiyuki Kataoka , Michio Murase , Kotaro Inoue , Isao Sumida , Shozo Yamanari , Masaki Matsumoto , Satoshi Miura , Koji Hashimoto
发明人： Hiroaki Suzuki , Yoshiyuki Kataoka , Michio Murase , Kotaro Inoue , Isao Sumida , Shozo Yamanari , Masaki Matsumoto , Satoshi Miura , Koji Hashimoto
IPC分类号： G21C7/32
CPC分类号： G21C7/32 , Y02E30/39
摘要： A natural circulation reactor includes a reactor pressure vessel, a cylindrical shroud disposed within the reactor pressure vessel to surround a reactor core and to extend to a position above the reactor core, and a coolant descending passage defined between the reactor pressure vessel and the shroud for allowing the coolant discharged from the top of the reactor core to be again supplied to the bottom of the reactor core. In such a natural circulation reactor, a liquid level of coolant in the coolant descending passage is adjusted on the basis of a reactor power request signal at a position below a liquid level of coolant in the shroud, and thus reactor power is controlled so that it may reach a predetermined reactor power by adjusting the liquid level of coolant in the coolant descending passage.
摘要翻译：自然循环反应器包括反应堆压力容器，设置在反应堆压力容器内以围绕反应堆堆芯并延伸到反应堆堆芯上方位置的圆柱形护罩，以及在反应堆压力容器和护罩之间限定的冷却剂下降通道，允许将从反应堆堆芯顶部排出的冷却剂再次供应到反应堆堆芯的底部。在这样的自然循环反应器中，根据在护罩中的冷却剂液面以下的位置的反应堆功率要求信号来调节冷却剂下降通道中的冷却剂液面，从而控制反应堆功率可以通过调节冷却剂下降通道中的冷却剂的液位来达到预定的反应堆功率。

2. 发明授权

US4808369A Emergency core cooling apparatus 失效
标题翻译：应急芯冷却装置
公开(公告)号：US4808369A
公开(公告)日：1989-02-28
申请号：US188704
申请日：1988-05-04
申请人： Shozo Yamanari , Tetsuo Horiuchi , Kenji Tominaga , Hiroshi Goto , Satoshi Miura
发明人： Shozo Yamanari , Tetsuo Horiuchi , Kenji Tominaga , Hiroshi Goto , Satoshi Miura
IPC分类号： G21C15/18
CPC分类号： G21C15/18 , Y02E30/40
摘要： Two systems of low-pressure core spray appratuses have coolers, and are adapted to supply cooling water to a core spray header provided in a core-surrounding cylindrical shroud in a reactor pressure vessel. Two systems of high-pressure core flooding apparatuses and one system of high-pressure coolant injection apparatus are adapted to supply the cooling water to a region formed between the shroud and reactor pressure vessel. The elevation of the openings, which are in the reactor pressure vessel, of the high-pressure core flooding apparatuses and high-pressure coolant injection apparatus are higher than that of the core spray header. A pipe for returning the cooling water in the reactor pressure vessel to the above-mentioned coolers is connected to either the portion of the interior of the reactor pressure vesssel which is below the core or the portion of the interior of the reactor pressure vessel which is between the walls of the shroud and reactor pressure vessel. The above-mentioned pipe is provided therein with a valve which is adapted to be closed when the nuclear reactor stops being operated in an emergency in which the breakage of a pipe occurs, and to be opened when the nuclear reactor is stopped under normal conditions.
摘要翻译：两个低压芯喷雾装置系统具有冷却器，并且适于将冷却水供应到设置在反应堆压力容器中的围绕围绕的圆筒形护罩中的芯喷雾集管。两个系统的高压芯驱动装置和一个高压冷却剂注入装置系统适于将冷却水供应到形成在护罩和反应堆压力容器之间的区域。高压芯驱动装置和高压冷却剂注入装置的反应堆压力容器中的开口的高度高于核心喷雾头的高度。用于将反应堆压力容器中的冷却水返回到上述冷却器的管道连接到反应堆压力容器内部的反应堆压力容器内部的部分，该部分位于核心或反应堆压力容器内部的部分在护罩的壁和反应堆压力容器之间。上述管道中设置有阀，当核反应堆在发生管道断裂的紧急情况下停止运行时，适于关闭，并且当核反应堆在正常条件下停止时打开。

3. 发明授权

US08462467B2 Thin film magnetic head including soft layer magnetically connected with shield 有权
标题翻译：薄膜磁头包括与屏蔽层磁性连接的软层
公开(公告)号：US08462467B2
公开(公告)日：2013-06-11
申请号：US12900879
申请日：2010-10-08
申请人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
发明人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A thin film magnetic head includes: a magneto resistance effect film of which electrical resistance varies corresponding to an external magnetic field; a pair of shields provided on both sides in a manner of sandwiching the MR film in a direction that is orthogonal to a film surface of the MR film; an anisotropy providing layer that provides exchange anisotropy to a first shield of the pair of shields in order to magnetize the first shield in a desired direction, and that is disposed on the opposite side from the MR film with respect to the first shield; and side shields that are disposed on both sides of the MR film in a track width direction and that include soft magnetic layers magnetically connected with the first shield.
摘要翻译：薄膜磁头包括：电阻效应膜，其电阻根据外部磁场而变化; 一对屏蔽，以与MR膜的膜表面正交的方向夹持MR膜的方式设置在两侧; 各向异性提供层，其向所述一对屏蔽件的第一屏蔽提供交换各向异性，以便在所需方向上磁化所述第一屏蔽，并且相对于所述第一屏蔽设置在与所述MR膜相反的一侧上; 以及侧面屏蔽，其设置在MR膜的轨道宽度方向的两侧，并且包括与第一屏蔽件磁性连接的软磁性层。

4. 发明申请

US20120087045A1 THIN FILM MAGNETIC HEAD INCLUDING SPIN-VALVE FILM WITH FREE LAYER MAGNETICALLY CONNECTED WITH SHIELD 有权
标题翻译：薄膜磁头包括旋转阀膜，自由层磁性连接
公开(公告)号：US20120087045A1
公开(公告)日：2012-04-12
申请号：US12900845
申请日：2010-10-08
申请人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
发明人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
IPC分类号： G11B5/33 , G11B5/56 , G11B5/48
CPC分类号： G11B5/3912 , B82Y25/00 , G01R33/093 , H01F10/325 , H01F10/3254 , H01L43/08
摘要： A thin film magnetic head includes; an MR film that includes a pinned layer of which a magnetization direction is pinned, a free layer of which a magnetization direction varies, and a spacer that is disposed therebetween; a pair of shields that are disposed on both sides sandwiching the MR film in a direction orthogonal to a film surface of the MR film; and an anisotropy providing layer that provides anisotropy to a first shield so that the first shield is magnetized in a desired direction, and that is disposed on an opposite side from the MR film with respect to the first shield. The MR film includes a magnetic coupling layer that is disposed between the first shield and the free layer and that magnetically couples the first shield with the free layer.
摘要翻译：薄膜磁头包括：包括磁化方向被钉扎的钉扎层，磁化方向变化的自由层和设置在其间的间隔件的MR膜; 一对屏蔽，其设置在与MR膜的膜表面正交的方向上夹着MR膜的两侧; 以及各向异性提供层，其向第一屏蔽提供各向异性，使得第一屏蔽沿期望的方向被磁化，并且被设置在与MR膜相对于第一屏蔽的相对侧上。 MR膜包括设置在第一屏蔽和自由层之间并且将第一屏蔽与自由层磁耦合的磁耦合层。

5. 发明授权

US07934309B2 Methods of fabricating exchange-coupling film, magnetoresistive element, and thin-film magnetic head 有权
标题翻译：制造交换耦合膜，磁阻元件和薄膜磁头的方法
公开(公告)号：US07934309B2
公开(公告)日：2011-05-03
申请号：US12003453
申请日：2007-12-26
申请人： Keita Kawamori , Satoshi Miura
发明人： Keita Kawamori , Satoshi Miura
IPC分类号： G11B5/127
CPC分类号： C21D1/04 , B82Y25/00 , B82Y40/00 , C21D9/0068 , G01R33/093 , G11B5/3163 , G11B5/3906 , H01F10/3295 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043
摘要： The method of fabricating an exchange-coupling film in accordance with the present invention comprises a multilayer body forming step of forming a multilayer body having an antiferromagnetic layer and a ferromagnetic layer laminated on the antiferromagnetic layer; and an annealing step of annealing the multilayer body in a magnetic field with a maximum temperature higher than a blocking temperature of the multilayer body by 15 to 60° C.
摘要翻译：根据本发明的制备交换耦合膜的方法包括：多层体形成步骤，其形成层叠在反铁磁层上的反铁磁层和铁磁层的多层体; 以及在多层体的最高温度高于多层体的阻挡温度15〜60℃的磁场中退火多层体的退火工序。

6. 发明授权

US07871238B2 Fuel pump 有权
标题翻译：燃油泵
公开(公告)号：US07871238B2
公开(公告)日：2011-01-18
申请号：US11737959
申请日：2007-04-20
申请人： Shigeru Yoshida , Satoshi Miura
发明人： Shigeru Yoshida , Satoshi Miura
IPC分类号： F04D29/44
CPC分类号： F02M37/048 , F04D5/005 , F04D5/006 , F04D29/445
摘要： A vapor lock in a fuel pump can be prevented by reducing the formation of vapor within the fuel. A first group of concavities may be formed in an inner circumferential region of an intake side face of an impeller, and a second group of concavities may be formed concentrically in a region outside of the first group of concavities. A third group of concavities that communicates with the second group of concavities may be formed in a discharge side face of the impeller. The impeller is housed within a casing. A first groove that faces the first group of concavities and a second groove that faces the second group of concavities may be formed in the face of the casing that faces the intake side face of the impeller. A third groove that faces the third group of concavities may be formed in the face of the casing that faces the discharge side face of the impeller.
摘要翻译：可以通过减少燃料内的蒸汽的形成来防止燃料泵中的蒸气锁。第一组凹部可以形成在叶轮的进气侧面的内周区域中，并且第二组凹部可以同心地形成在第一组凹部之外的区域中。可以在叶轮的排出侧面形成与第二组凹部连通的第三组凹部。叶轮容纳在外壳内。面对第一组凹部的第一凹槽和面向第二组凹部的第二凹槽可以形成在面向叶轮的进气侧面的壳体的表面中。面向第三组凹部的第三凹槽可以形成在面向叶轮的排出侧面的壳体的表面中。

7. 发明授权

US07573686B2 Thin-film magnetic head including low-resistance TMR element 有权
标题翻译：薄膜磁头包括低电阻TMR元件
公开(公告)号：US07573686B2
公开(公告)日：2009-08-11
申请号：US11474487
申请日：2006-06-26
申请人： Kei Hirata , Satoshi Miura , Naoki Ota
发明人： Kei Hirata , Satoshi Miura , Naoki Ota
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906
摘要： An MR element comprises: a tunnel barrier layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The tunnel barrier layer is made of a material containing an oxide semiconductor such as ZnO. The MR element has a resistance-area product that falls within a range of 0.3 to 2.0 Ω-μm2 inclusive.
摘要翻译： MR元件包括：具有面向相反方向的两个表面的隧道势垒层; 邻近所述隧道势垒层的一个表面并且具有响应于信号磁场而改变的磁化方向的自由层; 以及与隧道势垒层的另一个表面相邻并且具有固定的磁化方向的被钉扎层。隧道势垒层由含有ZnO等氧化物半导体的材料构成。 MR元件的电阻面积为0.3〜2.0Ωm2（含）的范围。

8. 发明申请

US20090174971A1 CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS 审中-公开
标题翻译：具有磁性层对的CPP型MAGNETO电阻效应元件
公开(公告)号：US20090174971A1
公开(公告)日：2009-07-09
申请号：US11968788
申请日：2008-01-03
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.
摘要翻译：磁阻效应元件包括：一对磁性层，其磁化方向形成其间的相对角度，其可根据外部磁场而变化; 以及夹在所述一对磁性层之间的结晶间隔层; 其中感测电流可以在垂直于一对磁性层和间隔层的膜平面的方向上流动。间隔层包括结晶氧化物，并且其磁化方向根据外部磁场而变化的任一个或两个磁性层具有其中CoFeB层夹在CoFe层和NiFe层之间并位于间隔物之间的层构造层和NiFe层。

9. 发明授权

US07372675B2 Magnetoresistive element, thin-film magnetic head, head gimbal assembly, head arm assembly and magnetic disk drive 有权
标题翻译：磁阻元件，薄膜磁头，头万向架组件，头臂组件和磁盘驱动器
公开(公告)号：US07372675B2
公开(公告)日：2008-05-13
申请号：US11253757
申请日：2005-10-20
申请人： Satoshi Miura , Takumi Uesugi , Norio Takahashi
发明人： Satoshi Miura , Takumi Uesugi , Norio Takahashi
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G01R33/06 , G11B5/3903 , G11B5/3909 , H01F10/30 , H01F10/3272 , H01L43/08
摘要： An MR element comprises: a tunnel barrier layer having two surfaces that face toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to an external magnetic field; and a pinned layer that is a ferromagnetic layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The free layer incorporates: a first soft magnetic layer disposed adjacent to the one of the surfaces of the tunnel barrier layer; a high polarization layer disposed such that the first soft magnetic layer is sandwiched between the tunnel barrier layer and the high polarization layer; and a second soft magnetic layer disposed such that the high polarization layer is sandwiched between the first and second soft magnetic layers.
摘要翻译： MR元件包括：具有面向相反方向的两个表面的隧道势垒层; 邻近隧道势垒层的一个表面设置并具有响应于外部磁场而变化的磁化方向的自由层; 以及钉扎层，其是与隧道势垒层的另一个表面相邻设置并具有固定的磁化方向的铁磁层。自由层包括：邻近隧道势垒层的一个表面设置的第一软磁层; 设置为使得第一软磁层夹在隧道势垒层和高偏振层之间的高偏振层; 以及设置成使得高偏振层夹在第一和第二软磁性层之间的第二软磁层。

10. 发明申请

US20080037184A1 Exchange-coupling film incorporating stacked antiferromagnetic layer and pinned layer, and magnetoresistive element including the exchange-coupling film 有权
标题翻译：包含堆叠反铁磁层和被钉扎层的交换耦合膜，以及包括交换耦合膜的磁阻元件
公开(公告)号：US20080037184A1
公开(公告)日：2008-02-14
申请号：US11806823
申请日：2007-06-04
申请人： Takumi Uesugi , Satoshi Miura
发明人： Takumi Uesugi , Satoshi Miura
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01F10/16 , H01F10/3272 , H01L43/08
摘要： An exchange-coupling film incorporates an antiferromagnetic layer and a pinned layer. The pinned layer includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a nonmagnetic middle layer, and a fourth ferromagnetic layer that are disposed in this order, the first ferromagnetic layer being closest to the antiferromagnetic layer. The first ferromagnetic layer is made of a ferromagnetic material and has a face-centered cubic structure. The second ferromagnetic layer is made of only iron or an alloy containing x atomic % cobalt and (100−x) atomic % iron, wherein x is greater than zero and smaller than or equal to 60. The third ferromagnetic layer is made of an alloy containing y atomic % cobalt and (100−y) atomic % iron, wherein y is within a range of 65 to 80 inclusive. The antiferromagnetic layer and the first ferromagnetic layer are exchange-coupled to each other. The third and fourth ferromagnetic layers are antiferromagnetically coupled to each other.
摘要翻译：交换耦合膜包含反铁磁层和钉扎层。被钉扎层包括第一铁磁层，第二铁磁层，第三铁磁层，非磁性中间层和第四铁磁层，第一铁磁层最靠近反铁磁层。第一铁磁层由铁磁材料制成并具有面心立方结构。第二铁磁层仅由铁或含有x原子％钴和（100-x）原子％铁的合金制成，其中x大于零且小于或等于60.第三铁磁层由合金含有原子％钴和（100-y）原子％铁，其中y在65〜80的范围内。反铁磁层和第一铁磁层彼此交换耦合。第三和第四铁磁层彼此反铁磁耦合。

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