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1. 发明申请

US20050285211A1 Gate dielectric having a flat nitrogen profile and method of manufacture therefor 有权
标题翻译：具有平坦氮分布的栅极电介质及其制造方法
公开(公告)号：US20050285211A1
公开(公告)日：2005-12-29
申请号：US10875482
申请日：2004-06-24
申请人： Hiroaki Niimi , Husam Alshareef , Rajesh Khamankar , Toan Tran
发明人： Hiroaki Niimi , Husam Alshareef , Rajesh Khamankar , Toan Tran
IPC分类号： H01L21/28 , H01L29/51 , H01L29/76
CPC分类号： H01L21/3115 , H01L21/0214 , H01L21/02329 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/512 , H01L29/518 , H01L29/6656
摘要： The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielectric includes forming a gate dielectric layer (410) on a substrate (310), and subjecting the gate dielectric layer (410) to a nitrogen containing plasma process (510), wherein the nitrogen containing plasma process (510) has a ratio of helium to nitrogen of 3:1 or greater.
摘要翻译：本发明提供一种具有平坦氮分布的栅极电介质及其制造方法，以及制造包含平坦氮分布的集成电路的方法。在一个实施例中，制造栅极电介质的方法包括在衬底（310）上形成栅极电介质层（410），并对栅极电介质层（410）施加含氮等离子体工艺（510），其中含氮等离子体工艺（510）的氦与氮的比例为3:1或更高。

2. 发明申请

US20080116542A1 Gate Dielectric Having a Flat Nitrogen Profile and Method of Manufacture Therefor 审中-公开
标题翻译：具有平坦氮型材的栅极电介质及其制造方法
公开(公告)号：US20080116542A1
公开(公告)日：2008-05-22
申请号：US12019135
申请日：2008-01-24
申请人： Hiroaki Niimi , Husam Alshareef , Rajesh Khamankar , Toan Tran
发明人： Hiroaki Niimi , Husam Alshareef , Rajesh Khamankar , Toan Tran
IPC分类号： H01L23/58
CPC分类号： H01L21/3115 , H01L21/0214 , H01L21/02329 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/512 , H01L29/518 , H01L29/6656
摘要： The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielectric includes forming a gate dielectric layer (410) on a substrate (310), and subjecting the gate dielectric layer (410) to a nitrogen containing plasma process (510), wherein the nitrogen containing plasma process (510) has a ratio of helium to nitrogen of 3:1 or greater.
摘要翻译：本发明提供一种具有平坦氮分布的栅极电介质及其制造方法，以及制造包含平坦氮分布的集成电路的方法。在一个实施例中，制造栅极电介质的方法包括在衬底（310）上形成栅极电介质层（410），并对栅极电介质层（410）施加含氮等离子体工艺（510），其中含氮等离子体工艺（510）的氦与氮的比例为3:1或更高。

3. 发明授权

US07560792B2 Reliable high voltage gate dielectric layers using a dual nitridation process 有权
标题翻译：使用双重氮化工艺的可靠的高压栅极电介质层
公开(公告)号：US07560792B2
公开(公告)日：2009-07-14
申请号：US11626624
申请日：2007-01-24
申请人： Rajesh Khamankar , Douglas T. Grider , Hiroaki Niimi , April Gurba , Toan Tran , James J. Chambers
发明人： Rajesh Khamankar , Douglas T. Grider , Hiroaki Niimi , April Gurba , Toan Tran , James J. Chambers
IPC分类号： H01L27/105
CPC分类号： H01L21/823462 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： Dual gate dielectric layers are formed on a semiconductor substrate for MOS transistor fabrication. A first dielectric layer (30) is formed on a semiconductor substrate (10). A first plasma nitridation process is performed on said first dielectric layer. The first dielectric layer (30) is removed in regions of the substrate and a second dielectric layer (50) is formed in these regions. A second plasma nitridation process is performed on the first dielectric layer and the second dielectric layer. MOS transistors (160, 170) are then fabricated using the dielectric layers (30, 50).
摘要翻译：在用于MOS晶体管制造的半导体衬底上形成双栅介质层。第一电介质层（30）形成在半导体衬底（10）上。在所述第一介电层上进行第一等离子体氮化处理。在衬底的区域中去除第一电介质层（30），并且在这些区域中形成第二电介质层（50）。在第一电介质层和第二电介质层上进行第二等离子体氮化处理。然后使用电介质层（30,50）制造MOS晶体管（160,170）。

4. 发明授权

US07183165B2 Reliable high voltage gate dielectric layers using a dual nitridation process 有权
标题翻译：使用双重氮化工艺的可靠的高压栅极电介质层
公开(公告)号：US07183165B2
公开(公告)日：2007-02-27
申请号：US10702234
申请日：2003-11-06
申请人： Rajesh Khamankar , Douglas T. Grider , Hiroaki Niimi , April Gurba , Toan Tran , James J. Chambers
发明人： Rajesh Khamankar , Douglas T. Grider , Hiroaki Niimi , April Gurba , Toan Tran , James J. Chambers
IPC分类号： H01L21/336
CPC分类号： H01L21/823462 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： Dual gate dielectric layers are formed on a semiconductor substrate for MOS transistor fabrication. A first dielectric layer (30) is formed on a semiconductor substrate (10). A first plasma nitridation process is performed on said first dielectric layer. The first dielectric layer (30) is removed in regions of the substrate and a second dielectric layer (50) is formed in these regions. A second plasma nitridation process is performed on the first dielectric layer and the second dielectric layer. MOS transistors (160, 170) are then fabricated using the dielectric layers (30, 50).
摘要翻译：在用于MOS晶体管制造的半导体衬底上形成双栅介质层。第一电介质层（30）形成在半导体衬底（10）上。在所述第一介电层上进行第一等离子体氮化处理。在衬底的区域中去除第一电介质层（30），并且在这些区域中形成第二电介质层（50）。在第一电介质层和第二电介质层上进行第二等离子体氮化处理。然后使用电介质层（30,50）制造MOS晶体管（160,170）。

5. 发明授权

US07345001B2 Gate dielectric having a flat nitrogen profile and method of manufacture therefor 有权
标题翻译：具有平坦氮分布的栅极电介质及其制造方法
公开(公告)号：US07345001B2
公开(公告)日：2008-03-18
申请号：US10875482
申请日：2004-06-24
申请人： Hiroaki Niimi , Husam N. Alshareef , Rajesh Khamankar , Toan Tran
发明人： Hiroaki Niimi , Husam N. Alshareef , Rajesh Khamankar , Toan Tran
IPC分类号： H01L29/72
CPC分类号： H01L21/3115 , H01L21/0214 , H01L21/02329 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/512 , H01L29/518 , H01L29/6656
摘要： The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielectric includes forming a gate dielectric layer (410) on a substrate (310), and subjecting the gate dielectric layer (410) to a nitrogen containing plasma process (510), wherein the nitrogen containing plasma process (510) has a ratio of helium to nitrogen of 3:1 or greater.
摘要翻译：本发明提供一种具有平坦氮分布的栅极电介质及其制造方法，以及制造包含平坦氮分布的集成电路的方法。在一个实施例中，制造栅极电介质的方法包括在衬底（310）上形成栅极电介质层（410），并对栅极电介质层（410）施加含氮等离子体工艺（510），其中含氮等离子体工艺（510）的氦与氮的比例为3:1或更高。

6. 发明申请

US20070117331A1 Reliable high voltage gate dielectric layers using a dual nitridation process 有权
标题翻译：使用双重氮化工艺的可靠的高压栅极电介质层
公开(公告)号：US20070117331A1
公开(公告)日：2007-05-24
申请号：US11626624
申请日：2007-01-24
申请人： Rajesh Khamankar , Douglas Grider , Hiroaki Niimi , April Gurba , Toan Tran , James Chambers
发明人： Rajesh Khamankar , Douglas Grider , Hiroaki Niimi , April Gurba , Toan Tran , James Chambers
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L21/823462 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： Dual gate dielectric layers are formed on a semiconductor substrate for MOS transistor fabrication. A first dielectric layer (30) is formed on a semiconductor substrate (10). A first plasma nitridation process is performed on said first dielectric layer. The first dielectric layer (30) is removed in regions of the substrate and a second dielectric layer (50) is formed in these regions. A second plasma nitridation process is performed on the first dielectric layer and the second dielectric. MOS transistors (160, 170) are then fabricated using the dielectric layers (30, 50).
摘要翻译：在用于MOS晶体管制造的半导体衬底上形成双栅介质层。第一电介质层（30）形成在半导体衬底（10）上。在所述第一介电层上进行第一等离子体氮化处理。在衬底的区域中去除第一电介质层（30），并且在这些区域中形成第二电介质层（50）。在第一电介质层和第二电介质上进行第二等离子体氮化处理。然后使用电介质层（30,50）制造MOS晶体管（160,170）。

7. 发明授权

US08601557B2 Secure information storage and delivery system and method 有权
标题翻译：安全的信息存储和传送系统及方法
公开(公告)号：US08601557B2
公开(公告)日：2013-12-03
申请号：US13350171
申请日：2012-01-13
申请人： Jonathan Slaton , Ryan B. Johnson , Toan Tran , David Reed , Abhilash Ravindran , George K. Tsantes
发明人： Jonathan Slaton , Ryan B. Johnson , Toan Tran , David Reed , Abhilash Ravindran , George K. Tsantes
IPC分类号： G06F15/16 , G06F21/20
CPC分类号： H04L63/08 , G06Q20/36 , G06Q40/025 , H04L63/0815 , H04L63/083 , H04L63/0838 , H04L2463/082 , H04W12/06 , H04W12/08
摘要： A system for secure information storage and delivery includes a vault repository that includes a secure vault associated with a user, wherein the secure vault is configured to receive at least one data entry. A mobile vault server coupled to the vault repository creates a mobile vault on a mobile device based on the secure vault and is capable of authenticating the mobile device based on user authentication information. The mobile vault server includes a mobile device handler that communicates with the mobile device. A synchronization utility determines whether the at least one data entry on the secure vault is transferable to or storable on the mobile vault. and transfers the data entry from the secure vault to a corresponding data entry on the mobile vault if the at least one data entry on the secure vault is determined to be transferable to or storable on the mobile vault.
摘要翻译：用于安全信息存储和传递的系统包括保管库存储库，其包括与用户相关联的安全保管库，其中所述安全保险库被配置为接收至少一个数据条目。耦合到保管库存储库的移动保管库服务器基于安全保管库在移动设备上创建移动保管库，并且能够基于用户认证信息来认证移动设备。移动保管库服务器包括与移动设备通信的移动设备处理程序。同步实用程序确定安全保险库上的至少一个数据条目是否可转移到或可存储在移动存储库上。并且如果所述安全保险库上的所述至少一个数据条目被确定为可转移到或可存储在所述移动存储库上，则将所述数据条目从所述安全保险库传送到所述移动存储库上的相应数据条目。

8. 发明申请

US20170221627A1 Tran principles, methods of DC pulse electric device without moving parts 审中-公开
公开(公告)号：US20170221627A1
公开(公告)日：2017-08-03
申请号：US14998670
申请日：2016-02-01
申请人： Toan Tran , Michael Giao Thien Nguyen , Annalisa Tran Torrente , Nhu Ha Thi Tran , Toan Cong Tran
发明人： Toan Tran , Michael Giao Thien Nguyen , Annalisa Tran Torrente , Nhu Ha Thi Tran , Toan Cong Tran
IPC分类号： H01F30/06 , H03H7/46
CPC分类号： H02K99/00 , H02K53/00 , Y10S74/09
摘要： A time-varying current from a DC voltage-source, flows through a primary winding of a magnetic circuit containing permanent magnets, induces more inductive voltages across different windings. The windings are wrapped around the main, sub-magnetic paths of different forms and constructions of the Tran-generators.The invention when combined with any one of recovering the utilized electric charge, using the (hybrid) soft magnetic wires, applying the Voltage-Doubler circuits, and using the transfer of high-potential electric charge to generate more electric energy, make the tran-generators useful.

9. 发明授权

US08988200B2 Printed label-to-RFID tag data translation apparatus and method 有权
标题翻译：印刷标签到RFID标签的数据转换装置和方法
公开(公告)号：US08988200B2
公开(公告)日：2015-03-24
申请号：US13210108
申请日：2011-08-15
申请人： Yong Hyun Lee , Toan Tran
发明人： Yong Hyun Lee , Toan Tran
IPC分类号： H04Q5/22 , G06K1/18
CPC分类号： G06K1/18
摘要： An apparatus and a method for translating, transcribing, and/or converting a printed label on a surface of an RFID tag into electronic data, which are writable to a non-volatile storage inside the RFID tag, are disclosed. In one example, the apparatus comprises an image reader for scanning a printed label on the surface of an RFID tag, a UHF antenna module, a UHF tag access module for reading from or writing into the RFID tag, and a computer interface to display various parameters and control the apparatus. A tag-holding plate containing batches of RFID tags can be brought to an access range of the image reader using a conveyor belt or another moving mechanism. Once positioned within the access range, the apparatus can read and translate a printed label on a RFID tag and write the converted electronic data into a non-volatile storage inside the RFID tag.
摘要翻译：公开了一种用于将RFID标签表面上的印刷标签翻译，转录和/或转换成电子数据的装置和方法，该数据可写入RFID标签内的非易失性存储器。在一个示例中，该装置包括用于扫描RFID标签的表面上的打印标签的图像读取器，UHF天线模块，用于从RFID标签读取或写入RFID标签的UHF标签访问模块，以及用于显示各种参数和控制装置。可以使用输送带或其他移动机构将包含批次的RFID标签的标签保持板带到图像读取器的存取范围。一旦定位在访问范围内，设备可以读取和翻译RFID标签上的打印标签，并将转换的电子数据写入RFID标签内的非易失性存储器。

10. 发明授权

US08117648B2 Secure information storage and delivery system and method 有权
标题翻译：安全的信息存储和传送系统及方法
公开(公告)号：US08117648B2
公开(公告)日：2012-02-14
申请号：US12068636
申请日：2008-02-08
申请人： Jonathan Slaton , Ryan B. Johnson , Toan Tran , David Reed , Abhilash Ravindran , George K. Tsantes
发明人： Jonathan Slaton , Ryan B. Johnson , Toan Tran , David Reed , Abhilash Ravindran , George K. Tsantes
IPC分类号： G06F15/16 , G06F17/00 , G06F21/00
CPC分类号： H04L63/08 , G06Q20/36 , G06Q40/025 , H04L63/0815 , H04L63/083 , H04L63/0838 , H04L2463/082 , H04W12/06 , H04W12/08
摘要： A system for secure information storage and delivery includes a vault repository that includes a secure vault associated with a user, wherein the secure vault is associated with a service level including at least one of a data type or a data size limit associated with the secure vault, the secure vault being adapted to receive and at least one data entry and securely store the at least one data entry if the at least one of a size or a type of the at least one data entry is consistent with the service level. A mobile vault server coupled to the vault repository creates a mobile vault on a mobile device based on the secure vault and is capable of authenticating the mobile device based on user authentication information. The mobile vault server includes a mobile device handler that communicates with the mobile device. A synchronization utility determines whether the at least one data entry on the secure vault is transferable to or storable on the mobile vault based on at least one of the size or the type of the at least one data entry and transfers the at least one data entry from the secure vault to a corresponding data entry on the mobile vault if the at least one data entry on the secure vault is determined to be transferable to or storable on the mobile vault.
摘要翻译：用于安全信息存储和传递的系统包括保管库存储库，其包括与用户相关联的安全保险库，其中所述安全保险库与包括与所述安全保险库相关联的数据类型或数据大小限度中的至少一个的服务级别相关联如果所述至少一个数据条目的大小或类型中的至少一个与所述服务级别一致，则所述安全库适于接收和至少一个数据条目并且安全地存储所述至少一个数据条目。耦合到保管库存储库的移动保管库服务器基于安全保管库在移动设备上创建移动保管库，并且能够基于用户认证信息来认证移动设备。移动保管库服务器包括与移动设备通信的移动设备处理程序。同步实用程序基于至少一个数据条目的大小或类型来确定安全保险库上的至少一个数据条目是否可转移到或可存储在移动存储库上，并且传送至少一个数据条目如果所述安全保险库上的所述至少一个数据条目被确定为可转移到或可存储在所述移动存储库上，则从所述保护库到所述移动存储库上的相应数据条目。

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