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1. 发明授权

US07687831B2 Solid state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07687831B2
公开(公告)日：2010-03-30
申请号：US10382058
申请日：2003-03-05
申请人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
发明人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
IPC分类号： H01L27/148 , H01L31/113 , H01L31/00 , H01L31/06
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.
摘要翻译：以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层1A的端部处产生的暗电流。此外，下层的第二P型半导体阱区9形成在从光电二极管PD后退的窄区域中，从而防止光电二极管PD的耗尽层受到阻碍，并且充分确保耗尽从而可以实现光电二极管PD的灵敏度的提高。

2. 发明授权

US08004019B2 Solid state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US08004019B2
公开(公告)日：2011-08-23
申请号：US11810440
申请日：2007-06-05
申请人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
发明人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
IPC分类号： H01L29/768
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.
摘要翻译：以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层1A的端部处产生的暗电流。此外，下层的第二P型半导体阱区9形成在从光电二极管PD后退的窄区域中，从而防止光电二极管PD的耗尽层受到阻碍，并且充分确保耗尽从而可以实现光电二极管PD的灵敏度的提高。

3. 发明授权

US08413355B2 Solid state image pick-up device having lower well regions for device separation with higher implantation energy 有权
标题翻译：固态摄像装置具有用于具有更高注入能量的器件分离的较低阱区
公开(公告)号：US08413355B2
公开(公告)日：2013-04-09
申请号：US12749128
申请日：2010-03-29
申请人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
发明人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
IPC分类号： H01L29/123
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.
摘要翻译：以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层1A的端部处产生的暗电流。此外，下层的第二P型半导体阱区9形成在从光电二极管PD后退的窄区域中，从而防止光电二极管PD的耗尽层受到阻碍，并且充分确保耗尽从而可以实现光电二极管PD的灵敏度的提高。

4. 发明申请

US20070235781A1 Solid state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US20070235781A1
公开(公告)日：2007-10-11
申请号：US11810440
申请日：2007-06-05
申请人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
发明人： Hiroaki Fujita , Ryoji Suzuki , Nobuo Nakamura , Yasushi Maruyama
IPC分类号： H01L31/06
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643
摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.
摘要翻译：以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层11A的端部处产生的暗电流。此外，第二P型半导体阱区9 在从光电二极管PD退出的窄区域中形成下层，从而防止光电二极管PD的耗尽层受到阻碍，并且在足够宽的区域中确保了耗尽，从而提高光电二极管PD的灵敏度实现。

5. 发明申请

US20120286388A1 SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE 有权
标题翻译：固态图像拾取装置和制造固态图像拾取装置的方法
公开(公告)号：US20120286388A1
公开(公告)日：2012-11-15
申请号：US13545673
申请日：2012-07-10
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

6. 发明授权

US07638355B2 Solid state image pickup device and method of producing solid state image pickup device 有权
公开(公告)号：US07638355B2
公开(公告)日：2009-12-29
申请号：US11973282
申请日：2007-10-05
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

7. 发明授权

US07279712B2 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US07279712B2
公开(公告)日：2007-10-09
申请号：US10954788
申请日：2004-09-30
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L29/76
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

8. 发明申请

US20050224841A1 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US20050224841A1
公开(公告)日：2005-10-13
申请号：US10509977
申请日：2003-04-04
申请人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
发明人： Nobuo Nakamura , Tomoyuki Umeda , Keiji Mabuchi , Hiroaki Fujita , Takashi Abe , Eiichi Funatsu , Hiroki Sato
IPC分类号： H04N5/335 , H04N5/355 , H04N5/374 , H01L27/148
CPC分类号： H04N5/3597 , H04N5/3698 , H04N5/3741
摘要： A solid-state imaging device for enlarging an operating margin of a pixel portion and achieving complete transfer of a signal charge by using a plurality of power supply voltages, wherein a plurality of power supplies having different power supply voltage values are supplied to portions of a semiconductor chip 1. For example, as a first power supply system, a first digital power supply voltage (DVDD1) is supplied from a power supply terminal 45, a first digital ground voltage (DVSS1) is supplied from a power supply terminal 46, a second digital power supply voltage (DVDD2) is supplied from a power supply terminal 47, a second digital ground voltage (DVSS2) is supplied from a power supply terminal 48, a third digital power supply (DVDD3) is supplied from a power supply terminal 49, and a third digital ground voltage (DVSS3) is supplied from a power supply terminal 50, and as a second power supply system, a first analog power supply voltage (AVDD1) is supplied from a power supply terminal 40, a first analog ground voltage (AVSS1) is supplied from a power supply terminal 41, a second analog power supply voltage (AVDD2) is supplied from a power supply terminal 42, and a second analog ground voltage (AVSS2) is supplied from a power supply terminal 43.
摘要翻译：一种固态成像装置，用于放大像素部分的工作裕度并通过使用多个电源电压实现信号电荷的完全传送，其中具有不同电源电压值的多个电源被提供给半导体芯片1.例如，作为第一电源系统，从电源端子45供给第一数字电源电压（DVDD1），从电源端子46供给第一数字接地电压（DVSS1），从电源端子47供给第二数字电源电压（DVDD2），从电源端子48供给第二数字接地电压（DVSS2），从第三数字电源电压（DVDD3）供给第三数字电源电压从电源端子50供给电源端子49和第三数字接地电压（DVSS3），作为第二电源系统，从第一电源端子供给第一模拟电源电压（AVDD 1）电源端子40从电源端子41供给第一模拟接地电压（AVSS1），从电源端子42供给第二模拟电源电压（AVDD2），将第二模拟接地电压（AVSS 2）从电源端子43供给。

9. 发明申请

US20050056902A1 Solid state image pickup device and method of producing solid state image pickup device 有权
标题翻译：固体摄像装置及固体摄像装置的制造方法
公开(公告)号：US20050056902A1
公开(公告)日：2005-03-17
申请号：US10954788
申请日：2004-09-30
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L21/027 , H01L23/544 , H01L27/14 , H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374 , G03G15/00 , H01L21/00 , H01L31/00
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.
摘要翻译：形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。使用活性区域的硅化物膜也可以用于配准标记。此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。也可以在背面（照明侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现所需的配准。

10. 发明授权

US08362486B2 Solid state image pickup device and method of producing solid state image pickup device 有权
公开(公告)号：US08362486B2
公开(公告)日：2013-01-29
申请号：US13545673
申请日：2012-07-10
申请人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
发明人： Takashi Abe , Nobuo Nakamura , Keiji Mabuchi , Tomoyuki Umeda , Hiroaki Fujita , Eiichi Funatsu , Hiroki Sato
IPC分类号： H01L29/76
CPC分类号： H01L27/14643 , H01L23/544 , H01L27/14603 , H01L27/14607 , H01L27/14609 , H01L27/14612 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14683 , H01L27/14685 , H01L27/14687 , H01L31/02162 , H01L31/0232 , H01L31/02327 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

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